54F533DM NSC | Alldatasheet

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Y Eight latches in a single package Y TRI-STATE outputs for bus interfacing Y Inverted version of the ’F373 Y Guaranteed 4000V minimum ESD protection Commercial Military Package Package DescriptionNumber 74F533PC N20A 20-Lead (0.300 × Wide) Molded Dual-In-Line 54F533DM (Note 2) J20A 20-Lead Ceramic Dual-In-Line 74F533SC (Note 1) M20B 20-Lead (0.300 × Wide) Molded Small Outline, JEDEC 74F533SJ (Note 1) M20D 20-Lead (0.300 × Wide) Molded Small Outline, EIAJ 54F533FM (Note 2) W20A 20-Lead Cerpack 54F533LM (Note 2) E20A 20-Lead Ceramic Leadless Chip Carrier, Type C Note 1: Devices also available in 13 × reel. Use suffix e SCX and SJX. Note 2: Military grade device with environmental and burn-in processing. Use suffix e DMQB, FMQB and LMQB. Logic Symbols Connection Diagrams IEEE/IEC TL/F/9548–4 TL/F/9548–1 Pin Assignment for DIP, SOIC and Flatpak TL/F/9548–2 Pin Assignment for LCC TL/F/9548–3 TRI-STATEÉ is a registered trademark of National Semiconductor Corporation. C1995 National Semiconductor Corporation RRD-B30M75/Printed in U. S. A.

Pin Names Description U.L. Input I IH/IIL HIGH/LOW Output I OH/IOL D0 –D7 Data Inputs 1.0/1.0 20 mA/b0.6 mA LE Latch Enable Input (Active HIGH) 1.0/1.0 20 mA/b0.6 mA OE Output Enable Input (Active LOW) 1.0/1.0 20 mA/b0.6 mA O0 –O7 Complementary TRI-STATE Outputs 150/40 (33.3) b3 mA/24 mA (20 mA) Function Table Inputs Output LE OE DO HL H L HL L H LL X O 0 XH X Z H e HIGH Voltage Level L e LOW Voltage Level X e Immaterial Functional Description The ’F533 contains eight D-type latches with TRI-STATE output buffers. When the Latch Enable (LE) input is HIGH, data on the D n inputs enters the latches. In this condition the latches are transparent, i.e., a latch output will change state each time its D input changes. When LE is LOW, the latches store the information that was present on the D in- puts a setup time preceding the HIGH-to-LOW transition of LE. The TRI-STATE buffers are controlled by the Output Enable (OE ) input. When OE is LOW, the buffers are in the bi-state mode. When OE is HIGH the buffers are in the high impedance mode but this does not interfere with entering new data into the latches. Logic Diagram TL/F/9548–5 Please note that this diagram is provided only for the understanding of logic operations and should not be used to estimate propagation delays.

Absolute Maximum Ratings (Note 1) If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/Distributors for availability and specifications. Storage Temperature b65§Ct o a150§C Ambient Temperature under Bias b55§Ct o a125§C Junction Temperature under Bias b55§Ct o a175§C Plastic b55§Ct o a150§C VCC Pin Potential to Ground Pin b0.5V to a7.0V Input Voltage (Note 2) b0.5V to a7.0V Input Current (Note 2) b30 mA to a5.0 mA Voltage Applied to Output in HIGH State (with V CC e 0V) Standard Output b0.5V to V CC TRI-STATE Output b0.5V to a5.5V Current Applied to Output in LOW State (Max) twice the rated I OL (mA) ESD Last Passing Voltage (Min) 4000V Note 1: Absolute maximum ratings are values beyond which the device may be damaged or have its useful life impaired. Functional operation under these conditions is not implied. Note 2: Either voltage limit or current limit is sufficient to protect inputs. Recommended Operating Conditions Free Air Ambient Temperature Military b55§Ct o a125§C Commercial 0 §Ct o a70§C Supply Voltage Military a4.5V to a5.5V Commercial a4.5V to a5.5V Symbol Parameter 54F/74F Units V CC Conditions Min Typ Max VIH Input HIGH Voltage 2.0 V Recognized as a HIGH Signal VIL Input LOW Voltage 0.8 V Recognized as a LOW Signal VCD Input Clamp Diode Voltage b1.2 V Min I IN eb 18 mA VOH Output HIGH 54F 10% V CC 2.5 I OH eb 1m A Voltage 54F 10% V CC 2.4 I OH eb 3m A 74F 10% V CC 2.5 V Min IOH eb 1m A 74F 10% V CC 2.4 I OH eb 3m A 74F 5% V CC 2.7 I OH eb 1m A 74F 5% V CC 2.7 I OH eb 3m A VOL Output LOW 54F 10% V CC 0.5 V Min IOL e 20 mA Voltage 74F 10% V CC 0.5 I OL e 24 mA IIH Input HIGH 54F 20.0 mA Max V IN e 2.7VCurrent 74F 5.0 IBVI Input HIGH Current 54F 100 mA Max V IN e 7.0VBreakdown Test 74F 7.0 IBVIT Input HIGH Current 54F 1.0 mA Max V IN e 5.5VBreakdown (I/O) 74F 0.5 ICEX Output HIGH 54F 250 mA Max V OUT e VCCLeakage Current 74F 50 VID Input Leakage 74F 4.75 V 0.0 IID e 1.9 mA Test All Other Pins Grounded IOD Output Leakage 74F 3.75 mA 0.0 VIOD e 150 mV Circuit Current All Other Pins Grounded IIL Input LOW Current b0.6 mA Max V IN e 0.5V IOZH Output Leakage Current 50 mA Max V OUT e 2.7V IOZL Output Leakage Current b50 mA Max V OUT e 0.5V IOS Output Short-Circuit Current b60 b150 mA Max V OUT e 0V IZZ Bus Drainage Test 500 mA 0.0V V OUT e 5.25V ICCZ Power Supply Current 41 61 mA Max V O e HIGH Z

TA ea 25§C TA,V CC e Mil T A,V CC e ComSymbol Parameter V CC ea 5.0V CL e 50 pF C L e 50 pF Units CL e 50 pF Min Typ Max Min Max Min Max AC Operating Requirements 74F 54F 74F Symbol Parameter TA ea 25§C TA,V CC e Mil T A,V CC e Com UnitsVCC ea 5.0V Min Max Min Max Min Max tw(H) LE Pulse Width, HIGH 6.0 6.0 6.0 ns

Ordering Information

The device number is used to form part of a simplified purchasing code where a package type and temperature range are defined as follows: 74F 533 S C X Temperature Range Family Special Variations 74F e Commercial X e Devices shipped in 13 × reels 54F e Military QB e Military grade device with environmental and burn-in Device Type processing shipped in tubes Package Code Temperature RangeP e Plastic DIP C e Commercial (0 §Ct o a70§C)D e Ceramic DIP M e Military ( b55§Ct o a125§C)F e Flatpak L e Leadless Chip Carrier (LCC) S e Small Outline SOIC JEDEC SJ e Small Outline SOIC EIAJ

Physical Dimensions inches (millimeters) 20-Lead Ceramic Leadless Chip Carrier (L) 20-Lead Ceramic Dual-In-Line Package (D)

Physical Dimensions inches (millimeters) (Continued) 20-Lead (0.300 × Wide) Molded Small Outline Package, JEDEC (S) 20-Lead (0.300 × Wide) Molded Small Outline Package, EIAJ (SJ)

Physical Dimensions inches (millimeters) (Continued) 20-Lead (0.300 × Wide) Molded Dual-In-Line Package (P)

54F/74F533 Octal Transparent Latch with TRI-STATE Outputs Physical Dimensions inches (millimeters) (Continued) 20-Lead Ceramic Flatpak (F) LIFE SUPPORT POLICY NATIONAL’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF NATIONAL SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life systems which, (a) are intended for surgical implant support device or system whose failure to perform can into the body, or (b) support or sustain life, and whose be reasonably expected to cause the failure of the life failure to perform, when properly used in accordance support device or system, or to affect its safety or with instructions for use provided in the labeling, can effectiveness. be reasonably expected to result in a significant injury to the user. National Semiconductor National Semiconductor National Semiconductor National Semiconductor National Semiconductores National Semiconductor Corporation GmbH Japan Ltd. Hong Kong Ltd. Do Brazil Ltda. (Australia) Pty, Ltd. 2900 Semiconductor Drive Livry-Gargan-Str. 10 Sumitomo Chemical 13th Floor, Straight Block, Rue Deputado Lacorda Franco Building 16 P.O. Box 58090 D-82256 F 4urstenfeldbruck Engineering Center Ocean Centre, 5 Canton Rd. 120-3A Business Park Drive Santa Clara, CA 95052-8090 Germany Bldg. 7F Tsimshatsui, Kowloon Sao Paulo-SP Monash Business Park Tel: 1(800) 272-9959 Tel: (81-41) 35-0 1-7-1, Nakase, Mihama-Ku Hong Kong Brazil 05418-000 Nottinghill, Melbourne TWX: (910) 339-9240 Telex: 527649 Chiba-City, Tel: (852) 2737-1600 Tel: (55-11) 212-5066 Victoria 3168 Australia Fax: (81-41) 35-1 Ciba Prefecture 261 Fax: (852) 2736-9960 Telex: 391-1131931 NSBR BR Tel: (3) 558-9999 Tel: (043) 299-2300 Fax: (55-11) 212-1181 Fax: (3) 558-9998 Fax: (043) 299-2500 National does not assume any responsibility for use of any circuitry described, no circuit patent licenses are implied and National reserves the right at any time without notice to change said circuitry and specifications.