74F245SC

54F245DM NSC | Alldatasheet

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Y A outputs sink 24 mA (20 mA Mil) Y B outputs sink 64 mA (48 mA Mil) Y Guaranteed 4000V minimum ESD protection Commercial Military Package Package DescriptionNumber 74F245PC N20A 20-Lead (0.300 × Wide) Molded Dual-In-Line 54F245DM (Note 2) J20A 20-Lead Ceramic Dual-In-Line 74F245SC (Note 1) M20B 20-Lead (0.300 × Wide) Molded Small Outline, JEDEC 74F245SJ (Note 1) M20D 20-Lead (0.300 × Wide) Molded Small Outline, EIAJ 74F245MSA (Note 1) MSA20 20-Lead Molded Shrink Small Outline, EIAJ Type II 54F245FM (Note 2) W20A 20-Lead Cerpack 54F245LM (Note 2) E20A 20-Lead Ceramic Leadless Chip Carrier, Type C Note 1: Devices also available in 13 × reel. Use suffix e SCX, SJX and MSAX. Note 2: Military grade device with environmental and burn-in processing. Use suffix e DMQB, FMQB and LMQB. Logic Symbols TL/F/9503–3 IEEE/IEC TL/F/9503–4 TRI-STATEÉ is a registered trademark of National Semiconductor Corporation. C1995 National Semiconductor Corporation RRD-B30M75/Printed in U. S. A.

DIP, SOIC, SSOP and Flatpak TL/F/9503–1 Pin Assignment for LCC TL/F/9503–2 Unit Loading/Fan Out 54F/74F Pin Names Description U.L. Input I IH/IIL HIGH/LOW Output I OH/IOL OE Output Enable Input (Active LOW) 1.0/2.0 20 mA/b1.2 mA T/R Transmit/Receive Input 1.0/2.0 20 mA/b1.2 mA A0 –A7 Side A Inputs or 3.5/1.083 70 mA/b0.65 mA TRI-STATE Outputs 150/40(38.3) b3 mA/24 mA (20 mA) B0 –B7 Side B Inputs or 3.5/1.083 70 mA/b0.65 mA TRI-STATE Outputs 600/106.6(80) b12 mA/64 mA (48 mA) Truth Table Inputs Output OE T/R L L Bus B Data to Bus A L H Bus A Data to Bus B H X High Z State H e HIGH Voltage Level L e LOW Voltage Level X e Immaterial

Absolute Maximum Ratings (Note 1) If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/Distributors for availability and specifications. Storage Temperature b65§Ct o a150§C Ambient Temperature under Bias b55§Ct o a125§C Junction Temperature under Bias b55§Ct o a175§C Plastic b55§Ct o a150§C VCC Pin Potential to Ground Pin b0.5V to a7.0V Input Voltage (Note 2) b0.5V to a7.0V Input Current (Note 2) b30 mA to a5.0 mA Voltage Applied to Output in HIGH State (with V CC e 0V) Standard Output b0.5V to V CC TRI-STATE Output b0.5V to a5.5V Current Applied to Output in LOW State (Max) twice the rated I OL (mA) ESD Last Passing Voltage (Min) 4000V Note 1: Absolute maximum ratings are values beyond which the device may be damaged or have its useful life impaired. Functional operation under these conditions is not implied. Note 2: Either voltage limit or current limit is sufficient to protect inputs. Recommended Operating Conditions Free Air Ambient Temperature Military b55§Ct o a125§C Commercial 0 §Ct o a70§C Supply Voltage Military a4.5V to a5.5V Commercial a4.5V to a5.5V Symbol Parameter 54F/74F Units V CC Conditions Min Typ Max VIH Input HIGH Voltage 2.0 V Recognized as a HIGH Signal VIL Input LOW Voltage 0.8 V Recognized as a LOW Signal VCD Input Clamp Diode Voltage b1.2 V Min I IN eb 18 mA VOH Output HIGH 54F 10% V CC 2.4 I OH eb 3m A( A n) Voltage 54F 10% V CC 2.0 I OH eb 12 mA (B n) 74F 10% V CC 2.4 V Min IOH eb 3m A( A n) 74F 10% V CC 2.0 I OH eb 15 mA (B n) 74F 5% V CC 2.7 I OH eb 3m A( A n) VOL Output LOW 54F 10% V CC 0.5 I OL e 20 mA (A n) Voltage 54F 10% V CC 0.55 V Min IOL e 48 mA (B n) 74F 10% V CC 0.5 I OL e 24 mA (A n) 74F 10% V CC 0.55 I OL e 64 mA (B n) IIH Input HIGH 54F 20.0 mA Max V IN e 2.7VCurrent 74F 5.0 IBVI Input HIGH Current 54F 100 mA Max V IN e 7.0V (OE , T/R )Breakdown Test 74F 7.0 IBVIT Input HIGH Current 54F 1.0 mA Max V IN e 5 . 5V( A n,B n)Breakdown (I/O) 74F 0.5 ICEX Output HIGH 54F 250 mA Max V OUT e VCC (An,B n)Leakage Current 74F 50 VID Input Leakage 74F 4.75 V 0.0 IID e 1.9 mA Test All Other Pins Grounded IOD Output Leakage 74F 3.75 mA 0.0 VIOD e 150 mV Circuit Current All Other Pins Grounded IIL Input LOW Current b1.2 mA Max V IN e 0.5V (T/R ,O E ) IIH a IOZH Output Leakage Current 70 mA Max V OUT e 2.7V (A n,B n) IIL a IOZL Output Leakage Current b650 mA Max V OUT e 0.5V (A n,B n)

Symbol Parameter 54F/74F Units V CC Conditions Min Typ Max IOS Output Short-Circuit Current b60 b150 mA Max VOUT e 0V (A n) b100 b225 V OUT e 0V (B n) IZZ Bus Drainage Test 500 mA 0.0V V OUT e 5.25V(An,B n) ICCH Power Supply Current 70 90 mA Max V O e HIGH ICCL Power Supply Current 95 120 mA Max V O e LOW ICCZ Power Supply Current 85 110 mA Max V O e HIGH Z 74F 54F 74F TA ea 25§C TA,V CC e Mil T A,V CC e ComSymbol Parameter V CC ea 5.0V CL e 50 pF C L e 50 pF Units CL e 50 pF Min Typ Max Min Max Min Max

Ordering Information

The device number is used to form part of a simplified purchasing code where the package type and temperature range are defined as follows: 74F 245 S C X Temperature Range Family Special Variations 74F e Commercial QB e Military grade device with 54F e Military environmental and burn-in processingDevice Type X e Devices shipped in 13 × reel Package Code Temperature RangeP e Plastic DIP C e Commercial (0 §Ct o a70§C)D e Ceramic DIP M e Military ( b55§Ct o a125§C)F e Flatpak L e Leadless Chip Carrier (LCC) NOTE: NOT REQUIREDS e Small Outline SOIC JEDEC FOR MSA PACKAGE CODEMSA e Shrink Small Outline Package (EIAJ SSOP) SJ e Small Outline Package SOIC EIAJ

Physical Dimensions inches (millimeters) 20-Lead Ceramic Leadless Chip Carrier (L) 20-Lead Ceramic Dual-In-Line Package (D)

Physical Dimensions inches (millimeters) (Continued) 20-Lead (0.300 × Wide) Molded Small Outline Package, JEDEC (S) 20-Lead (0.300 × Wide) Molded Small Outline Package, EIAJ (SJ)

Physical Dimensions inches (millimeters) (Continued) 20-Lead Molded Shrink Small Outline Package, EIAJ, Type II (MSA) 20-Lead Molded (0.300 × Wide) Dual-In-Line Package (P)

54F/74F245 Octal Bidirectional Transceiver with TRI-STATE Outputs Physical Dimensions inches (millimeters) (Continued) 20-Lead Ceramic Flatpak (F) LIFE SUPPORT POLICY NATIONAL’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF NATIONAL SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life systems which, (a) are intended for surgical implant support device or system whose failure to perform can into the body, or (b) support or sustain life, and whose be reasonably expected to cause the failure of the life failure to perform, when properly used in accordance support device or system, or to affect its safety or with instructions for use provided in the labeling, can effectiveness. be reasonably expected to result in a significant injury to the user. National Semiconductor National Semiconductor National Semiconductor National Semiconductor National Semiconductores National Semiconductor Corporation GmbH Japan Ltd. Hong Kong Ltd. Do Brazil Ltda. (Australia) Pty, Ltd. 2900 Semiconductor Drive Livry-Gargan-Str. 10 Sumitomo Chemical 13th Floor, Straight Block, Rue Deputado Lacorda Franco Building 16 P.O. Box 58090 D-82256 F 4urstenfeldbruck Engineering Center Ocean Centre, 5 Canton Rd. 120-3A Business Park Drive Santa Clara, CA 95052-8090 Germany Bldg. 7F Tsimshatsui, Kowloon Sao Paulo-SP Monash Business Park Tel: 1(800) 272-9959 Tel: (81-41) 35-0 1-7-1, Nakase, Mihama-Ku Hong Kong Brazil 05418-000 Nottinghill, Melbourne TWX: (910) 339-9240 Telex: 527649 Chiba-City, Tel: (852) 2737-1600 Tel: (55-11) 212-5066 Victoria 3168 Australia Fax: (81-41) 35-1 Ciba Prefecture 261 Fax: (852) 2736-9960 Telex: 391-1131931 NSBR BR Tel: (3) 558-9999 Tel: (043) 299-2300 Fax: (55-11) 212-1181 Fax: (3) 558-9998 Fax: (043) 299-2500 National does not assume any responsibility for use of any circuitry described, no circuit patent licenses are implied and National reserves the right at any time without notice to change said circuitry and specifications.