74AC10 STMICROELECTRONICS | Alldatasheet

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n HIGH SPEED: tPD = 4 ns (TYP.) at VCC =5 V n LOW POWER DISSIPATION: ICC =4 µA (MAX.) at TA =2 5oC n HIGH NOISE IMMUNITY: VNIH =V NIL = 28% VCC (MIN.) n 50Ω TRANSMISSION LINE DRIVING CAPABILITY n SYMMETRICAL OUTPUT IMPEDANCE: |IOH |=IOL =24m A( MI N ) n BALANCED PROPAGATION DELAYS: t PLH ≅ tPHL n OPERATING VOLTAGE RANGE: VCC (OPR) = 2V to 6V n PIN AND FUNCTION COMPATIBLE WITH

74 SERIES 10

n IMPROVED LATCH-UP IMMUNITY

DESCRIPTION

The AC10 is an advanced high-speed CMOS TRIPLE 3-INPUT NAND GATE fabricated with sub-micron silicon gate and double-layer metal wiring C 2MOS technology. It is ideal for low power applications mantaining high speed operation similar to equivalent Bipolar Schottky TTL. The internal circuit is composed of 3 stages including buffer output, which enables high noise immunity and stable output. All inputs and outputs are equipped with protection circuits against static discharge, giving them 2KV ESD immunity and transient excess voltage. PIN CONNECTION AND IEC LOGIC SYMBOLS ORDER CODES : 74AC10B 74AC10M M (Micro Package) B (Plastic Package)

INPUT AND OUTPUT EQUIVALENT CIRCUIT ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VCC Supply Voltage -0.5 to +7 V VI DC Input Voltage -0.5 to V CC + 0.5 V VO DC Output Voltage -0.5 to V CC + 0.5 V IIK DC Input Diode Current ± 20 mA IOK DC Output Diode Current ± 20 mA IO DC Output Current ± 50 mA ICC or IGND DC V CC or Ground Current ± 150 mA Tstg Storage Temperature -65 to +150 oC TL Lead Temperature (10 sec) 300 oC Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these condition is not implied. TRUTH TABLE ABCY LXXH XLXH XXLH HHHL PIN DESCRIPTION PIN No SYMBOL NAME AND FUNCTION 1, 3, 9 1A to 3A Data Inputs 2, 4, 10 1B to 3B Data Inputs 13, 5, 11 1C to 3C Data Inputs 12, 6, 8 1Y to 3Y Data Outputs

7 GND Ground (0V)

14 V CC Positive Supply Voltage

RECOMMENDED OPERATING CONDITIONS Symbol Parameter Value Unit VCC Supply Voltage 2 to 6 V VI Input Voltage 0 to V CC V VO Output Voltage 0 to V CC V Top Operating Temperature: -40 to +85 oC dt/dv Input Rise and Fall Time VCC = 3.0, 4.5 or 5.5 V(note 1) 8 ns/V 1) VIN from 30% to 70% of VCC 74AC10

Symbol Parameter Test Conditions Value Unit V CC (V) TA =2 5 oC- 4 0 t o 8 5 o C VIH High Level Input Voltage 3.0 V O = 0.1 V or VCC - 0.1 V 2.1 1.5 2.1 V4.5 3.15 2.25 3.15 5.5 3.85 2.75 3.85 VIL Low Level Input Voltage 3.0 V O = 0.1 V or VCC - 0.1 V 1.5 0.9 0.9 V4.5 2.25 1.35 1.35 5.5 2.75 1.65 1.65 VOH High Level Output Voltage 3.0 V I (*)= V IH or V IL IO =-50 µ A 2.9 2.99 2.9 V 4.5 I O =-50µA 4.4 4.49 4.4 5.5 I O =-50µA 5.4 5.49 5.4 3.0 I O =-12 mA 2.56 2.46 4.5 I O =-24 mA 3.86 3.76 5.5 I O =-24 mA 4.86 4.76 VOL Low Level Output Voltage 3.0 V I (*)= V IH or V IL IO =50 µA 0.002 0.1 0.1 V 4.5 I O =50 µA 0.001 0.1 0.1 5.5 I O =50 µA 0.001 0.1 0.1 3.0 I O =12 mA 0.36 0.44 4.5 I O =24 mA 0.36 0.44 5.5 I O =24 mA 0.36 0.44 II Input Leakage Current 5.5 VI =V CC or GND ±0.1 ±1 µA ICC Quiescent Supply Current

5.5 V I =V CC or GND 4 40 µA

IOLD Dynamic Output Current (note 1, 2) 5.5 V OLD = 1.65 V max 75 mA IOHD VOHD = 3.85 V min -75 mA 1) Maximum test duration 2ms, one output loaded at time 2) Incident wave switching is guaranteed on transmission lines with impedances as low as 50Ω . (*) All outputs loaded. CAPACITIVE CHARACTERISTICS Symbol Parameter Test Conditions Value Unit V CC (V) TA =2 5 oC- 4 0 t o 8 5 o C C IN Input Capacitance 5.0 4.5 pF C PD Power Dissipation Capacitance (note 1) 5.0 25 pF 1) CPD is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. ICC (opr) = CPD • VCC •fIN +ICC /n (per circuit) AC ELECTRICAL CHARACTERISTICS (CL = 50 pF, RL = 500Ω , Input tr =tf=3 ns) Symbol Parameter Test Condition Value Unit V CC (V) TA =2 5 oC- 4 0 t o 8 5 o C tPLH tPHL 5.0(**) 1 . 5 4617 (*) Voltage range is 3.3V± 0.3V (**) Voltage range is5V± 0.5V 74AC10

CL = 50 pF or equivalent (includes jig and probe capacitance) RL =R 1 = 500Ω or equivalent RT =Z OUT of pulse generator (typically 50Ω ) WAVEFORM: PROPAGATION DELAYS (f=1MHz; 50% duty cycle) 74AC10

DIM. mm inch a1 0.51 0.020 B 1.39 1.65 0.055 0.065 b 0.5 0.020 b1 0.25 0.010 D 20 0.787 E 8.5 0.335 e 2.54 0.100 e3 15.24 0.600 F 7.1 0.280 I 5.1 0.201 L 3.3 0.130 Z 1.27 2.54 0.050 0.100 P001A Plastic DIP-14 MECHANICAL DATA 74AC10

DIM. mm inch A 1.75 0.068 a1 0.1 0.2 0.003 0.007 a2 1.65 0.064 b 0.35 0.46 0.013 0.018 b1 0.19 0.25 0.007 0.010 C 0.5 0.019 c1 45 (typ.) D 8.55 8.75 0.336 0.344 E 5.8 6.2 0.228 0.244 e 1.27 0.050 e3 7.62 0.300 F 3.8 4.0 0.149 0.157 G 4.6 5.3 0.181 0.208 L 0.5 1.27 0.019 0.050 M 0.68 0.026 S 8 (max.) P013G SO-14 MECHANICAL DATA 74AC10

Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsabilit y for the consequences of use of such information nor for any infringemen t of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise underany patent or patent rights of SGS-THOMSON Microelectr onics. Specifications mention ed in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectr onics products are not authorized for use as critical compon ents in life supportdevices or systems withoutexpre ss written approval of SGS-THOMSON Microelectonics.  1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserve d SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan- Korea - Malaysia - Malta - Morocco - The Netherlands - Singapore - Spain- Sweden- Switzerland - Taiwan - Thailand - United Kingdom - U.S.A 74AC10