7491

IRF7491 IRF | Alldatasheet

Document overview

• Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
• PDF pages: 8

Technical content

www.irf.com 1 08/30/02 IRF7491 HEXFET® Power MOSFET z High frequency DC-DC converters Benefits

Applications

z Low Gate to Drain Charge to Reduce Switching Losses z Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) z Fully Characterized Avalanche Voltage and Current Notes c through h are on page 8 SO-8Top View 4 5 D D D DG S A S S A Absolute Maximum Ratings Parameter Units VDS Drain-to-Source Voltage V VGS Gate-to-Source Voltage ID @ TA = 25°C Continuous Drain Current, VGS @ 10V ID @ TA = 100°C Continuous Drain Current, VGS @ 10V A IDM Pulsed Drain Current c PD @TA = 25°C Maximum Power Dissipation W Linear Derating Factor W/°C dv/dt Peak Diode Recovery dv/dt e V/ns TJ Operating Junction and °C TSTG Storage Temperature Range Thermal Resistance Parameter Typ. Max. Units RθJL Junction-to-Drain Lead ––– 20 °C/W RθJA Junction-to-Ambient (PCB Mount) * ––– 50 -55 to + 150 0.02 Max. 9.7h 6.1 ± 20 2.5 4.4 VDSS RDS(on) max I D 80V 16mΩ@VGS = 10V 9.7A PD - 94537

2 www.irf.com S D G Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units V(BR)DSS Drain-to-Source Breakdown Voltage 80 ––– ––– V ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.08 ––– V/°C RDS(on) Static Drain-to-Source On-Resistance ––– 14 16 mΩ VGS(th) Gate Threshold Voltage 3.5 ––– 5.5 V IDSS Drain-to-Source Leakage Current ––– ––– 1.0 µA IGSS Gate-to-Source Forward Leakage ––– ––– 100 nA Gate-to-Source Reverse Leakage ––– ––– -100 Dynamic @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units gfs Forward Transconductance 9.6 ––– ––– S Qg Total Gate Charge ––– 51 76 Qgs Gate-to-Source Charge ––– 18 ––– nC Qgd Gate-to-Drain ("Miller") Charge ––– 18 ––– td(on) Turn-On Delay Time ––– 22 ––– td(off) Turn-Off Delay Time ––– 32 ––– ns Ciss Input Capacitance ––– 2940 ––– Coss Output Capacitance ––– 290 ––– Crss Reverse Transfer Capacitance ––– 160 ––– pF Coss Output Capacitance ––– 980 ––– Coss Output Capacitance ––– 210 ––– Coss eff. Effective Output Capacitance ––– 310 ––– Avalanche Characteristics Parameter Units EAS Single Pulse Avalanche Energydh mJ IAR Avalanche Current c A Diode Characteristics Parameter Min. Typ. Max. Units IS Continuous Source Current ––– ––– 9.7 (Body Diode) A ISM Pulsed Source Current ––– ––– 77 (Body Diode) ch VSD Diode Forward Voltage ––– ––– 1.3 V trr Reverse Recovery Time ––– 47 ––– ns Qrr Reverse Recovery Charge ––– 110 ––– nC ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Typ. ––– ––– Conditions VDS = 25V, ID = 5.8A ID = 5.8A VDS = 40V Conditions VGS = 10V f VGS = 0V VDS = 25V ƒ = 1.0MHz 130 5.8 MOSFET symbol showing the integral reverse p-n junction diode. TJ = 25°C, IS = 5.8A, VGS = 0V f TJ = 25°C, IF = 5.8A, VDD = 25V di/dt = 100A/µs f Conditions VGS = 0V, ID = 250µA Reference to 25°C, ID = 1mA VGS = 10V, ID = 5.8A f VDS = VGS, ID = 250µA VDS = 64V, VGS = 0V VDS = 64V, VGS = 0V, TJ = 125°C VGS = 20V VGS = -20V Max. VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz VGS = 0V, VDS = 64V, ƒ = 1.0MHz VGS = 0V, VDS = 0V to 64V e VGS = 10V f VDD = 40V ID = 5.8A RG = 6.2Ω

www.irf.com 3 Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 2.5 T , Junction Temperature( C) R , Drain-to-Source On Resistance (Normalized) J DS(on) V = I = GS D 10V 9.7A 0.1 1 10 100 1000 VDS, Drain-to-Source Voltage (V) 100 ID, Drain-to-Source Current (A) 6.0V 20µs PULSE WIDTH Tj = 150°C VGS TOP 15V 12V 10V 8.0V 7.5V 7.0V 6.5V BOTTOM 6.0V VGS, Gate-to-Source Voltage (V) 0.10 1.00 10.00 100.00 ID, Drain-to-Source Current (Α) TJ = 25°C TJ = 150°C VDS = 25V 20µs PULSE WIDTH 0.1 1 10 100 1000 VDS, Drain-to-Source Voltage (V) 0.01 0.1 100 ID, Drain-to-Source Current (A) 6.0V 20µs PULSE WIDTH Tj = 25°C VGS TOP 15V 12V 10V 8.0V 7.5V 7.0V 6.5V BOTTOM 6.0V

4 www.irf.com Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 0 1 02 03 04 05 06 0 QG Total Gate Charge (nC) 0.0 2.0 4.0 6.0 8.0 10.0 12.0 VGS, Gate-to-Source Voltage (V) VDS= 64V VDS= 40V VDS= 16V ID= 5.8A VSD, Source-toDrain Voltage (V) 0.10 1.00 10.00 100.00 ISD, Reverse Drain Current (A) TJ = 25°C TJ = 150°C VGS = 0V 1 10 100 VDS, Drain-to-Source Voltage (V) 100 1000 10000 100000 C, Capacitance(pF) VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd Coss = Cds + Cgd CossCrss Ciss 0 1 10 100 1000 VDS, Drain-to-Source Voltage (V) 0.1 100 1000 ID, Drain-to-Source Current (A) 1msec 10msec OPERATION IN THIS AREA LIMITED BY RDS(on) 100µsec TA = 25°C Tj = 150°C Single Pulse

www.irf.com 5 Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 0.01 0.1 100 Notes: 1. Duty factor D = t / t 2. Peak T = P x Z + T 1 2 J DM thJA A P t t DM t , Rectangular Pulse Duration (sec) Thermal Response (Z ) thJA 0.01 0.02 0.05 0.10 0.20 D = 0.50 SINGLE PULSE (THERMAL RESPONSE) Fig 10a. Switching Time Test Circuit VDS 90% 10% VGS td(on) tr td(off) tf Fig 10b. Switching Time Waveforms VDS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % RD VGS RG D.U.T. 10V -VDD 25 50 75 100 125 150 I , Drain Current (A)D Fig 9. Maximum Drain Current Vs. Ambient Temperature TA , Ambient Temperature (°C)

6 www.irf.com Fig 13. On-Resistance Vs. Gate VoltageFig 12. On-Resistance Vs. Drain Current Fig 14a&b. Basic Gate Charge Test Circuit and Waveform Fig 15a&b. Unclamped Inductive Test circuit and Waveforms Fig 15c. Maximum Avalanche Energy Vs. Drain Current D.U.T. VDS IDIG 3mA VGS .3µF 50KΩ .2µF12V Current Regulator Same Type as D.U.T. Current Sampling Resistors VGS QG QGS QGD VG Charge tp V(BR)DSS IAS RG IAS 0.01Ωtp D.U.T LVDS - VDD DRIVER A 15V 20V 25 50 75 100 125 150 120 180 240 300 Starting T , Junction Temperature( C) E , Single Pulse Avalanche Energy (mJ) J AS ID TOP BOTTOM 2.6A 4.7A 5.8A 0 1 02 03 04 05 06 07 08 0 ID , Drain Current (A) RDS (on) , Drain-to-Source On Resistance (m VGS = 10V 6 7 8 9 10 11 12 13 14 15 16 VGS, Gate -to -Source Voltage (V) RDS(on), Drain-to -Source On Resistance (m ID = 9.7A

www.irf.com 7 SO-8 Part Marking EXAMPLE: THIS IS AN IRF7101 (MOSFET) INTERNATIONAL RECTIFIER LOGO F7101 YWW XXXX PART NUMBER LOT CODE WW = WEEK Y = LAST DIGIT OF THE YEAR DATE CODE (YWW) D E y b A H K L .189 .1497 .013 .050 BASIC .0532 .0040 .2284 .0099 .016 .1968 .1574 .020 .0688 .0098 .2440 .0196 .050 4.80 3.80 0.33 1.35 0.10 5.80 0.25 0.40

1.27 BASIC

5.00 4.00 0.51 1.75 0.25 6.20 0.50 1.27 MIN MAX MILLIMETERSINCHES MIN MAXDIM e c .0075 .0098 0.19 0.25 .025 BASIC 0.635 BASIC D B E A e6X H 0.25 [.010] A K x 45° 8X L 8X c y 0.25 [.010] CAB A A18X b C 0.10 [.004] 4312 FOOTPRINT 8X 0.72 [.028] 6.46 [.255] 3X 1.27 [.050] 4. OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA. NOTES: 1. DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994. 2. CONTROLLING DIMENSION: MILLIMETER 3. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES]. 5 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS. 6 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS. MOLD PROTRUSIONS NOT TO EXCEED 0.25 [.010] .

7 DIMENSION IS THE LENGTH OF LEAD FOR SOLDERING TO

A SUBSTRATE. MOLD PROTRUSIONS NOT TO EXCEED 0.15 [.006] . 8X 1.78 [.070]

8 www.irf.com c Repetitive rating; pulse width limited by max. junction temperature. d Starting TJ = 25°C, L = 7.4mH RG = 25Ω, IAS = 5.8A. e Pulse width ≤ 400µs; duty cycle ≤ 2%. Notes: 330.00 (12.992) MAX. 14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. FEED DIRECTION TERMINAL NUMBER 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 )NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. SO-8 Tape and Reel f When mounted on 1 inch square copper board. g Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. h ISD ≤ 5.8A, di/dt ≤ 250A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information .08/02 Data and specifications subject to change without notice. This product has been designed and qualified for t he Industrial market. Qualification Standards can be found on IR’s Web site.