M54HC164 STMICROELECTRONICS | Alldatasheet
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Technical content
8 BIT SIPO SHIFT REGISTER
(Plastic Package) ORDER CODES : M54HC164F1R M74HC164M1R M74HC164B1R M74HC164C1R F1R (Ceramic Package) M1R (Micro Package) C1R (Chip Carrier) PIN CONNECTIONS (top view) NC = No Internal Connecti on .HIGH SPEED tPD = 15 ns (TYP.) AT VCC =5V .LOW POWER DISSIPATION I CC =4 µA (MAX.) AT TA =2 5°C .OUTPUT DRIVE CAPABILITY
10 LSTTL LOADS
.BALANCED PROPAGATION DELAYS t PLH =tPHL .SYMMETRICAL OUTPUT IMPEDANCE I OL = IOH = 4 mA (MIN.) .HIGH NOISE IMMUNITY VNIH =V NIL =2 8%V CC (MIN.) .WIDE OPERATING VOLTAGE RANGE V CC (OPR) = 2 V TO 6 V .PIN AND FUNCTION COMPATIBLE WITH 54/74LS164
DESCRIPTION
The M54/74HC164 is a high speed CMOS 8 BIT SIPO SHIFT REGISTER fabricated in silicon gate C 2MOS technology. It has the same highspeed per- formance of LSTTL combined with true CMOS low power consumption. The HC164 is an 8 bit shift register with serial data entry and an output from each of the eight stages. Data is entered serially through one of two inputs (A or B), either of these inputs can be used as an active high enable for data entry through the other input. An unused input must be high, or both inputs con- nected together. Each low-to-high transition on the clock input shifts data one place to the right and entersintoQA, thelogic NAND of the two data inputs (A ⋅B), the data that existed before the rising clock edge. A low level on the clear input overrides all other inputs and clears the register asynchronously, forcing all Q outputs low. All inputs are equipped with protection circuits against static discharge and transient excess volt- age.
INPUT AND OUTPUT EQUIVALENT CIRCUIT TRUTH TABLE INPUTS OUTPUS AB H X X NO CHANGE X: Don’t Care QAn - QGn : The level of QA -QG, respectively. before the most-recent transition of th clock. LOGIC DIAGRAM M54/M74HC164
PIN No SYMBOL NAME AND FUNCTION 1, 2 A, B Data Inputs 3, 4, 5, 6, 10, 11, 12, QA to QH Outputs
8 CLOCK Clock Input (LOW to
HIGH, Edge-triggered)
9 CLEAR Master Reset Input
7 GND Ground (0V)
CC Positive Supply Voltage IEC LOGIC SYMBOL ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VCC Supply Voltage -0.5 to +7 V VI DC Input Voltage -0.5 to V CC + 0.5 V VO DC Output Voltage -0.5 to V CC + 0.5 V IIK DC Input Diode Current ± 20 mA IOK DC Output Diode Current ± 20 mA IO DC Output Source Sink Current Per Output Pin ± 25 mA ICC or IGND DC V CC or Ground Current ± 50 mA P D Power Dissipation 500 (*) mW Tstg Storage Temperature -65 to +150 oC TL Lead Temperature (10 sec) 300 oC Absolute MaximumRatings are those values beyond whichdamage tothe device may occu r. Functional operation under these condition isnotimplied. (*) 500 mW:≅ 65 oC derate to 300 mW by 10mW/oC: 65oCt o 8 5oC RECOMMENDED OPERATING CONDITIONS Symbol Parameter Value Unit VCC Supply Voltage 2 to 6 V VI Input Voltage 0 to V CC V VO Output Voltage 0 to V CC V Top Operating Temperature:M54HC Series M74HC Series -55 to +125 -40 to +85 oC oC tr,tf Input Rise and Fall Time V CC = 2 V 0 to 1000 ns VCC = 4.5 V 0 to 500 VCC = 6 V 0 to 400 M54/M74HC164
(V) TA =2 5oC 54HC and 74HC -40 to 85oC 74HC -55 to 125oC 54HC VIH High Level Input Voltage 2.0 1.5 1.5 1.5 V4.5 3.15 3.15 3.15 6.0 4.2 4.2 4.2 V IL Low Level Input Voltage 2.0 0.5 0.5 0.5 V4.5 1.35 1.35 1.35 6.0 1.8 1.8 1.8 V OH High Level Output Voltage
2.0 VI =
IO =-20µA 1.9 2.0 1.9 1.9 V VOL Low Level Output Voltage IO =2 0µA 0.0 0.1 0.1 0.1 V II Input Leakage Current 6.0 VI =V CC or GND ±0.1 ±1 ±1 µA ICC Quiescent Supply Current
6.0 V I =V CC or GND 4 40 80 µA
AC ELECTRICAL CHARACTERISTICS (CL =5 0p F ,I n p u ttr =t f =6n s ) Symbol Parameter Test Conditions Value UnitVCC (V) TA =2 5oC 54HC and 74HC -40 to 85oC 74HC -55 to 125oC 54HC tTLH tTHL Output Transition Time 2.0 30 75 95 110 ns4 . 5 8 1 51 92 2 6 . 0 7 1 31 61 9 tPLH tPHL Propagation Delay Time (CLOCK - Q) 2.0 57 160 200 240 ns4.5 19 32 40 48 6.0 16 27 34 41 t PHL Propagation Delay Time (CLEAR - Q) 2.0 60 175 220 265 ns4.5 20 35 44 53 6.0 17 30 37 45 f MAX Maximum Clock Frequency 2.0 6.2 18 5.0 4.2 MHz4.5 31 53 25 21 6.0 37 62 30 25 tW(H) tW(L) Minimum Pulse Width (CLOCK) 2.0 24 75 95 110 ns4 . 5 6 1 51 92 2 6 . 0 5 1 31 61 9 t W(L) Minimum Pulse Width (CLEAR) 2.0 40 75 95 110 ns4.5 10 15 19 22 6 . 0 9 1 31 61 9 t s Minimum Set-up Time (A, B - CK) 2.0 16 50 65 75 ns4 . 5 4 1 01 31 5 6.0 3 9 11 13 t h Minimum Hold Time (A, B - CK) 2.0 5 5 5 ns4.5 5 5 5 6.0 5 5 5 tREM Minimum Removal Time 2.0 5 5 5 ns4.5 5 5 5 6.0 5 5 5 C IN Input Capacitance 5 10 10 10 pF C PD (*) Power Dissipation Capacitance 99 pF (*) CPD is defined as the value of the IC’s internal equivalent capac itance which is calculated from the operating current consump tion without load. (Refer to Test Circuit). Average operting current can be obtained by the following equation. ICC (opr) = CPD •VCC •fIN +ICC M54/M74HC164
SWITCHING CHARACTERISTICS TEST WAVEFORM TEST CIRCUIT ICC (Opr.) INPUT WAVEFORM IS THE SAME AS THAT IN CASE OF SWITCHING CHARACTERISTICS TEST. CLEAR MODE SERIAL MODE M54/M74HC164
Plastic DIP14 MECHANICAL DATA DIM. mm inch a1 0.51 0.020 B 1.39 1.65 0.055 0.065 b 0.5 0.020 b1 0.25 0.010 D 20 0.787 E 8.5 0.335 e 2.54 0.100 e3 15.24 0.600 F 7.1 0.280 I 5.1 0.201 L 3.3 0.130 Z 1.27 2.54 0.050 0.100 P001A M54/M74HC164
Ceramic DIP14/1 MECHANICAL DATA DIM. mm inch A 20 0.787 B 7.0 0.276 D 3.3 0.130 E 0.38 0.015 e3 15.24 0.600 F 2.29 2.79 0.090 0.110 G 0.4 0.55 0.016 0.022 H 1.17 1.52 0.046 0.060 L 0.22 0.31 0.009 0.012 M 1.52 2.54 0.060 0.100 N 10.3 0.406 P 7.8 8.05 0.307 0.317 Q 5.08 0.200 P053C M54/M74HC164
DIM. mm inch A 1.75 0.068 a1 0.1 0.2 0.003 0.007 a2 1.65 0.064 b 0.35 0.46 0.013 0.018 b1 0.19 0.25 0.007 0.010 C 0.5 0.019 c1 45 ° (typ.) D 8.55 8.75 0.336 0.344 E 5.8 6.2 0.228 0.244 e 1.27 0.050 e3 7.62 0.300 F 3.8 4.0 0.149 0.157 G 4.6 5.3 0.181 0.208 L 0.5 1.27 0.019 0.050 M 0.68 0.026 S8 ° (max.) P013G M54/M74HC164
DIM. mm inch A 9.78 10.03 0.385 0.395 B 8.89 9.04 0.350 0.356 D 4.2 4.57 0.165 0.180 d1 2.54 0.100 d2 0.56 0.022 E 7.37 8.38 0.290 0.330 e 1.27 0.050 e3 5.08 0.200 F 0.38 0.015 G 0.101 0.004 M 1.27 0.050 M1 1.14 0.045 P027A M54/M74HC164
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