7413

IRF7413 IRF | Alldatasheet

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www.irf.com 1 3/19/02 IRF7413 SMPS MOSFET HEXFET /G174/G32Power MOSFET /G108High frequency DC-DC converters Benefits

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/G108Low Gate to Drain Charge to Reduce Switching Losses /G108Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) /G108Fully Characterized Avalanche Voltage and Current Parameter Max. Units ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 12 ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 9.6 A IDM Pulsed Drain Current /G129 96 PD @T A = 25°C Power Dissipation/G132 2.5 W Linear Derating Factor 0.02 W/°C VGS Gate-to-Source Voltage ± 20 V dv/dt Peak Diode Recovery dv/dt /G134 1.0 V/ns TJ Operating Junction and -55 to + 150 TSTG Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Absolute Maximum Ratings Notes/G32/G129/G32through /G134 are on page 8 SO-8Top View 4 5 D D D DG S A S S A VDSS R DS(on) max(m /G87/G41ID 30V 11@V GS = 10V 12A Symbol Parameter Typ. Max. Units R θJL Junction-to-Drain Lead ––– 20 R θJA Junction-to-Ambient /G132 ––– 50 °C/W Thermal Resistance /G80/G68/G45/G32/G57/G49/G51/G51/G48/G70

2 www.irf.com Parameter Min. Typ. Max. Units Conditions gfs Forward Transconductance 16 ––– ––– SV DS = 10V, ID = 7.2A Q g Total Gate Charge ––– 44 66 ID = 7.2A Q gs Gate-to-Source Charge ––– 7.9 ––– nC V DS = 24V Q gd Gate-to-Drain ("Miller") Charge ––– 9.2 ––– VGS = 10V, td(on) Turn-On Delay Time ––– 8.8 ––– VDD = 100V tr Rise Time ––– 8.0 ––– ID = 7.2A td(off) Turn-Off Delay Time ––– 35 ––– R G = 6.2Ω tf Fall Time ––– 14 ––– VGS = 10V/G32/G131 C iss Input Capacitance ––– 1670 ––– VGS = 0V C oss Output Capacitance ––– 670 ––– VDS = 25V C rss Reverse Transfer Capacitance ––– 100 ––– pF ƒ = 1.0MHz C oss Output Capacitance ––– 2290 ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz C oss Output Capacitance ––– 680 ––– VGS = 0V, VDS = 24V, ƒ = 1.0MHz C oss eff. Effective Output Capacitance ––– 1020 ––– VGS = 0V, VDS = 0V to 24V /G133 Dynamic @ T J = 25°C (unless otherwise specified) ns Parameter Typ. Max. Units EAS Single Pulse Avalanche Energy/G130 ––– 120 mJ IAR Avalanche Current/G129 ––– 7.2 A Avalanche Characteristics S D G Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) ––– ––– showing the ISM Pulsed Source Current integral reverse (Body Diode) /G129 ––– ––– p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.0 V T J = 25°C, IS = 7.2A, VGS = 0V/G32/G131 trr Reverse Recovery Time ––– 50 75 ns T J = 25°C, IF = 7.2A Q rr Reverse RecoveryCharge ––– 74 110 nC di/dt = 100A/µs /G32/G131 Diode Characteristics 3.1 /G65 Static @ TJ = 25°C (unless otherwise specified) IGSS IDSS Drain-to-Source Leakage Current R DS(on) Static Drain-to-Source On-Resistance m Ω Symbol Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 30 ––– ––– VV GS = 0V, ID = 250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient––– 0.03 ––– V/°C Reference to 25°C, ID = 1mA VGS(th) Gate Threshold Voltage 1.0 ––– ––– VV DS = VGS , ID = 250µA ––– ––– 1.0 µA VDS = 24V, VGS = 0V ––– ––– 25 V DS = 24V, VGS = 0V, TJ = 125°C Gate-to-Source Forward Leakage ––– ––– 100 V GS = 20V Gate-to-Source Reverse Leakage ––– ––– -100 nA VGS = -20V

www.irf.com 3 Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 T , Junction Temperature( C) R , Drain-to-Source On Resistance (Normalized) J DS(on) V = I = GS D 10V 12A 0. 1 1 10 100 VDS , Drain-to-Source Voltage (V) 0.01 0. 1 100 ID, Drain-to-Source Current (A) 2.5V 20µs PULSE WIDTH Tj = 25°C VGS TOP 10V 4.5V 3.7V 3.5V 3.3V 3.0V 2.7V BOTTOM 2.5V 0. 1 1 10 100 VDS , Drain-to-Source Voltage (V) 0. 1 100 ID, Drain-to-Source Current (A) 2.5V 20µs PULSE WIDTH Tj = 150°C VGS TOP 10V 4.5V 3.7V 3.5V 3.3V 3.0V 2.7V BOTTOM 2.5V VGS , Gate-to-Source Voltage (V) 100 ID, Drain-to-Source Current ( A) TJ = 25°C TJ = 150°C VDS = 15V 20µs PULSE WIDTH

4 www.irf.com Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 1 10 100 VDS , Drain-to-Source Voltage (V) 100 1000 10000 100000 C, Capacitance (pF) Coss Crss Ciss VGS = 0V, f = 1 MHZ C iss = Cgs + C gd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd 0 1 02 03 04 05 0 QG Total Gate Charge (nC) VGS, Gate-to-Source Voltage (V) VDS = 24V VDS= 15V VDS= 6.0V ID = 7.2A VSD , Source-toDrain Voltage (V) 0.1 1.0 10.0 100.0 ISD, Reverse Drain Current (A) TJ = 25°C TJ = 150°C VGS = 0V 0 1 10 100 1000 VDS , Drain-toSource Voltage (V) 100 1000 ID, Drain-to-Source Current (A) Tc = 25°C Tj = 150°C Single Pulse 1msec 10msec OPERATION IN THIS AREA LIMITED BY RDS (on) 100µsec

www.irf.com 5 Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 0.1 100 Notes: 1. Duty factor D =t / t 2. Peak T= P x Z + T 1 2 J DM thJA A P t t DM t , Rectangular Pulse Duration (sec) Thermal Response(Z ) thJA 0.01 0.02 0.05 0.10 0.20 D = 0.50 SINGLE PULSE (THERMAL RESPONSE) Fig 10a. Switching Time Test Circuit VDS 90% 10% VGS td(on) tr td(off) tf Fig 10b. Switching Time Waveforms /G86/G68/G83 /G80/G117/G108/G115/G101/G32/G87/G105/G100/G116/G104/G32≤ 1 /G181/G115 /G68/G117/G116/G121/G32/G70/G97/G99/G116/G111/G114/G32≤ 0.1 % /G82/G68 /G86/G71/G83 /G82/G71 /G68/G46/G85/G46/G84/G46 /G49/G48/G86 -/G86/G68/G68 25 50 75 100 125 150 T , Case Temperature( C) I , Drain Current (A) D Fig 9. Maximum Drain Current Vs. Ambient Temperature

6 www.irf.com Fig 13. On-Resistance Vs. Gate VoltageFig 12. On-Resistance Vs. Drain Current Fig 14a&b. Basic Gate Charge Test Circuit and Waveform Fig 15a&b. Unclamped Inductive Test circuit and Waveforms Fig 15c. Maximum Avalanche Energy Vs. Drain Current D.U.T. VDS IDIG 3mA VGS .3µF 50KΩ .2µF12V Current Regulator Same Type as D.U.T. Current Sampling Resistors /G86/G71/G83 Q G Q GS Q GD VG Charge tp V(BR)DSS IAS R G IAS 0.01Ωtp D.U.T LVDS - VDD DRIVER A 15V 20V 25 50 75 100 125 150 100 150 200 250 300 Starting T , Junction Temperature( C) E , Single Pulse Avalanche Energy (mJ) J AS ID TOP BOTTOM 3.2A 4.6A 7.2A 0 2 04 06 08 0 ID , Drain Current (A) 0.004 0.008 0.012 0.016 0.020 0.024 RDS (on) , Drain-to-Source On Resistance (Ω) VGS = 10V VGS = 4.5V VGS , Gate -to -Source Voltage (V) 0.00 0.01 0.02 0.03 0.04 0.05 0.06 RDS(on), Drain-to -Source On Resistance ( ID = 7.2A

www.irf.com 7 SO-8 Part Marking EXAMPLE: THIS IS AN IRF7101 (MOSFET) INTERNATIONAL RECTIFIER LOGO F7101 YWW XXXX PART NUMBER LOT CODE WW = WEEK Y = LAST DIGIT OF THE YEAR DATE CODE (YWW) D E y b A H K L .189 .1497 .013 .050 BAS IC .0532 .0040 .2284 .0099 .016 .1968 .1574 .020 .0688 .0098 .2440 .0196 .050 4.80 3.80 0.33 1.35 0.10 5.80 0.25 0.40

1.27 BASIC

5.00 4.00 0.51 1.75 0.25 6.20 0.50 1.27 MIN MAX MIL L IME T E RSINCHES MIN MAXDIM e c .0075 .0098 0.19 0.25 .025 BAS IC 0.635 BASIC D B E A e6X H 0.25 [.010] A K x 45° 8X L 8X c y 0.25 [.010] CAB A A18X b C 0.10 [.004] 4312 F OOT PR INT 8X 0.72 [.028] 6.46 [.255] 3X 1.27 [.050] 4. OU T L INE CONF ORMS T O JE DE C OU T L INE MS -012AA. NOTES: 1. DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994. 2. C O NTRO LLING DIM ENSIO N: M ILLIM ETER 3. DIMENSIONS ARE S HOWN IN MILLIMET ERS [INCHES]. 5 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS . 6 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS . MOLD PROTRUSIONS NOT TO EXCEED 0.25 [.010].

7 DIM ENSIO N IS THE LENG TH O F LEA D FO R SO LDERING TO

A SUBSTRATE. MOLD PROTRUSIONS NOT TO EXCEED 0.15 [.006]. 8X 1.78 [.070]

8 www.irf.com /G129/G32Repetitive rating; pulse width limited by max. junction temperature. /G78/G111/G116/G101/G115/G58 /G130 /G32Starting TJ = 25°C, L = 4.4mH RG = 25Ω , IAS = 7.2A. /G131 Pulse width ≤ 300µs; duty cycle ≤ 2%. /G132 When mounted on 1 inch square copper board 330.00 (12.992) MAX. 14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. FEED DIRECTION TERMINAL NUMBER 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 )N OTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. SO-8 Tape and Reel IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.3/02 Data and specifications subject to change without notice. This product has been designed and qualified for the Automotive [Q101] market. Qualification Standards can be found on IR’s Web site. /G133 Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS /G134ISD ≤ 7.2A, di/dt ≤ 120A/µs, VDD ≤ V(BR)DSS , TJ ≤ 150°C