72893 VISHAY | Alldatasheet
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Document Number: 72893 22-Mar-04 www.vishay.com Si4804BDY vs. Si4804DY Description: Dual N-Channel, 30-V (D-S) MOSFET Package: SOIC-8 Pin Out: Identical Part Number Replacements: Si4804BDY Replaces Si4804DY Si4804BDY—E3 (Lead Free version) Replaces Si4804DY Si4804BDY-T1 Replaces Si4804DY-T1 Si4804BDY-T1—E3 (Lead Free version) Replaces Si4804DY-T1 Summary of Performance: The Si4804BDY is the replacement for the original Si4804DY; both parts perform identically including limits to the parametric tables below. ABSOLUTE MAXIMUM RATINGS (TA = 25 /C0095C UNLESS OTHERWISE NOTED) Parameter Symbol Si4804BDY Si4804DY Unit Drain-Source Voltage VDS 30 30 VGate-Source Voltage VGS /C003420 /C003420 V Continuous Drain Current TA = 25/C0095C ID 7.5 7.5 Continuous Drain Current TA = 70/C0095C ID 6 6 APulsed Drain Current IDM 30 20 A Continuous Source Current (MOSFET Diode Conduction) IS 2.3 1.7 Power Dissipation TA = 25/C0095C PD 1.7 2.0 WPower Dissipation TA = 70/C0095C PD 2.0 1.3 W Operating Junction and Storage Temperature Range Tj and Tstg −55 to 150 −55 to 150 /C0095C Maximum Junction-to-Ambient RthJA 62.5 62.5 /C0095C/W SPECIFICATIONS (TJ = 25 /C0095C UNLESS OTHERWISE NOTED) Si4804BDY Si4804DY Parameter Symbol Min Typ Max Min Typ Max Unit Static Gate-Threshold Voltage VG(th) 0.8 3.0 0.8 V Gate-Body Leakage IGSS /C0034100 /C0034100 nA Zero Gate Voltage Drain Current IDSS 1 1 /C0109A On-State Drain Current VGS = 10 V ID(on) 20 20 A Drain Source On Resistance VGS = 10 V rD( ) 0.017 0.022 0.018 0.022 Forward Transconductance gfs 19 22 S Diode Forward Voltage VSD 0.75 1.2 0.8 1.2 V Dynamic Total Gate Charge Qg 7 11 13 20 Gate-Source Charge Qgs 2.9 2 nC Gate-Drain Charge Qgd 2.5 2.7 Gate Resistance Rg 0.5 1.5 2.6 NS /C0087 Switching Turn-On Time td(on) 9 15 8 16 Turn-On Time tr 10 17 10 20 Turn Off Time td(off) 19 30 21 40 ns Turn-Off Time tf 9 15 10 20 Source-Drain Reverse Recovery Time trr 35 55 40 80 NS denotes parameter not specified in original data sheet.