72022

72022 VISHAY | Alldatasheet

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/C0068LITTLE FOOT/C0114 Plus Schottky /C0068Si4830DY Pin Compatible /C0068PWM Optimized /C0068100% Rg Tested

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/C0068Asymmetrical Buck-Boost DC/DC Converter Si4370DY Vishay Siliconix Document Number: 72022 S-32621—Rev. C, 29-Dec-03 www.vishay.com Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode PRODUCT SUMMARY VDS (V) rDS(on) (/C0087) ID (A) Channel 1 0.022 @ VGS = 10 V 7.5 Channel-1 0.030 @ VGS = 4.5 V 6.5 Channel 2 30 0.022 @ VGS = 10 V 7.5 Channel-2 0.028 @ VGS = 4.5 V 6.5 SCHOTTKY PRODUCT SUMMARY VDS (V) VSD (V) Diode Forward Voltage IF (A) 30 0.50 V @ 1.0 A 2.0 S1 D1 G1 D1 S2 D2 G2 D2 SO-8 Top View N-Channel MOSFET N-Channel MOSFET Schottky Diode Ordering Information: Si4370DY—E3 (Lead Free) Si4370DY -T1—E3 (Lead Free with Tape and Reel) ABSOLUTE MAXIMUM RATINGS (TA = 25/C0095C UNLESS OTHERWISE NOTED) 10 secs Steady State Parameter Symbol Channel-1 Channel-2 Channel-1 Channel-2 Unit Drain-Source Voltage VDS 30 VGate-Source Voltage VGS /C003420 /C003412 /C003420 /C003412 V Continuous Drain Current (TJ = 150/C0095C)a TA = 25/C0095C ID 7.5 5.7 Continuous Drain Current (TJ = 150/C0095C)a TA = 70/C0095C ID 6.0 4.6 APulsed Drain Current IDM 30 A Continuous Source Current (Diode Conduction)a IS 1.7 0.9 Maximum Power Dissipationa TA = 25/C0095C PD 2.0 1.1 WMaximum Power Dissipationa TA = 70/C0095C PD 1.3 0.7 W Operating Junction and Storage Temperature Range TJ, Tstg −55 to 150 /C0095C THERMAL RESISTANCE RATINGS MOSFET Schottky Parameter Symbol Typ Max Typ Max Unit Mi J t i t A b it a t /C0118 10 sec R 52 62.5 53 62.5 Maximum Junction-to-Ambienta Steady-State RthJA 93 110 93 110 /C0095C/W Maximum Junction-to-Foot (Drain) Steady-State RthJF 35 40 35 40 C/W Notes a. Surface Mounted on 1” x 1” FR4 Board.

www.vishay.com Document Number: 72022 S-32621—Rev. C, 29-Dec-03 MOSFET SPECIFICATIONS (TJ = 25/C0095C UNLESS OTHERWISE NOTED). Parameter Symbol Test Condition Min Typa Max Unit Static Gate Threshold Voltage VGS(th) VDS = VGS ID = 250 /C0109A Ch-1 1.0 3.0 VGate Threshold Voltage VGS(th) VDS = VGS, ID = 250 /C0109A Ch-2 0.8 2.0 V Gate Body Leakage IGSS VDS = 0 V, VGS = /C003420 V Ch-1 /C0034100 nAGate-Body Leakage IGSS VDS = 0 V, VGS = /C003412 V Ch-2 /C0034100 nA VDS = 30 V VGS = 0 V Ch-1 1 Zero Gate Voltage Drain Current IDSS VDS = 30 V, VGS = 0 V Ch-2 100 /C0109AZero Gate Voltage Drain Current IDSS VDS = 30 V VGS = 0 V TJ = 85/C0095C Ch-1 15 /C0109A VDS = 30 V, VGS = 0 V, TJ = 85/C0095C Ch-2 2000 On State Drain Currentb ID( ) VDS = 5 V VGS = 10 V Ch-1 20 AOn-State Drain Currentb ID(on) VDS = 5 V, VGS = 10 V Ch-2 20 A VGS = 10 V ID = 7 5 A Ch-1 0.014 0.022 Drain Source On State Resistanceb rDS( ) VGS = 10 V, ID = 7.5 A Ch-2 0.015 0.022 /C0087Drain-Source On-State Resistanceb rDS(on) VGS = 4 5 V ID = 6 5 A Ch-1 0.024 0.030 /C0087 VGS = 4.5 V, ID = 6.5 A Ch-2 0.020 0.028 Forward Transconductanceb gf VDS = 15 V ID = 7 5 A Ch-1 19 SForward Transconductanceb gfs VDS = 15 V, ID = 7.5 A Ch-2 21 S Diode Forward Voltageb VSD IS = 1 A VGS = 0 V Ch-1 0.75 1.2 VDiode Forward Voltageb VSD IS = 1 A, VGS = 0 V Ch-2 0.47 0.5 V Dynamica Total Gate Charge Qg Ch-1 7 11 Total Gate Charge Qg Ch-2 11.5 18 Gate Source Charge Q VDS = 15 V VGS = 4 5 V ID = 7 5 A Ch-1 2.9 nCGate-Source Charge Qgs VDS = 15 V, VGS = 4.5 V, ID = 7.5 A Ch-2 3.8 nC Gate Drain Charge Q d Ch-1 2.5 Gate-Drain Charge Qgd Ch-2 3.5 Gate Resistance R Ch-1 0.5 1.5 1.9 /C0087Gate Resistance Rg Ch-2 0.5 1.8 1.9 /C0087 Turn On Delay Time td( ) Ch-1 9 15 Turn-On Delay Time td(on) Ch-2 12 20 Rise Time t Ch-1 10 17 Rise Time tr VDD = 15 V, RL = 15 /C0087 Ch-2 10 17 Turn Off Delay Time td( ff) VDD = 15 V, RL = 15 /C0087 ID /C0094 1 A, VGEN = 10 V, Rg = 6 /C0087 Ch-1 19 30 nsTurn-Off Delay Time td(off) g Ch-2 40 66 ns Fall Time tf Ch-1 9 15 Fall Time tf Ch-2 9 15 Source Drain Reverse Recovery Time t IF = 1 7 A di/dt = 100 A//C0109s Ch-1 35 55 Source-Drain Reverse Recovery Time trr IF = 1.7 A, di/dt = 100 A//C0109s Ch-2 28 45 Notes a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width /C0118 300 /C0109s, duty cycle /C0118 2%. SCHOTTKY SPECIFICATIONS (TJ = 25/C0095C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min Typ Max Unit Forward Voltage Drop VF IF = 1.0 A 0.47 0.50 VForward Voltage Drop VF IF = 1.0 A, TJ = 125/C0095C 0.36 0.42 V Vr = 30 V 0.004 0.100 Maximum Reverse Leakage Current Irm Vr = 30 V, TJ = 100/C0095C 0.7 10 mAMaximum Reverse Leakage Current Irm Vr = −30 V, TJ = 125/C0095C 3.0 20 mA Junction Capacitance CT Vr = 10 V 50 pF

Document Number: 72022 S-32621—Rev. C, 29-Dec-03 www.vishay.com TYPICAL CHARACTERISTICS (25/C0095C UNLESS NOTED) MOSFET CHANNEL-1 240 480 720 960 1200 0 5 10 15 20 25 30 012345 02468 1 0 VGS = 10 thru 5 V TC = 125/C0095C −55/C0095C 25/C0095C Output Characteristics Transfer Characteristics VDS − Drain-to-Source Voltage (V) − Drain Current (A)I D VGS − Gate-to-Source Voltage (V) − Drain Current (A)I D 3 V − On-Resistance (rDS(on) /C0087) 0.6 0.8 1.0 1.2 1.4 1.6 1.8 −50 −25 0 25 50 75 100 125 150 0 3 6 9 12 15 0.000 0.010 0.020 0.030 0.040 0 5 10 15 20 25 30 VDS − Drain-to-Source Voltage (V) Crss VDS = 15 V ID = 7.5 A ID − Drain Current (A) VGS = 10 V ID = 7.5 A VGS = 10 V VGS = 4.5 V Gate Charge − Gate-to-Source Voltage (V) Qg − Total Gate Charge (nC) C − Capacitance (pF) V GS Capacitance On-Resistance vs. Junction Temperature TJ − Junction Temperature (/C0095C) (Normalized) − On-Resistance rDS(on) Coss Ciss 4 V On-Resistance vs. Drain Current

www.vishay.com Document Number: 72022 S-32621—Rev. C, 29-Dec-03 TYPICAL CHARACTERISTICS (25/C0095C UNLESS NOTED) MOSFET CHANNEL-1 0.00 0.01 0.02 0.03 0.04 0.05 0.06 02468 1 0 TJ = 150/C0095C ID = 7.5 A 0.1 Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage − On-Resistance (rDS(on) /C0087) VSD − Source-to-Drain Voltage (V) V GS − Gate-to-Source Voltage (V) − Source Current (A)I S −0.8 −0.6 −0.4 −0.2 −0.0 0.2 0.4 −50 −25 0 25 50 75 100 125 150 ID = 250 /C0109A Threshold Voltage Variance (V)VGS(th) TJ − Temperature (/C0095C) Safe Operating Area, Junction-to-Foot VDS − Drain-to-Source Voltage (V) 100 0.1 1 10 100 0.01 100 ms − Drain Current (A)I D 0.1 Limited by rDS(on) TC = 25/C0095C Single Pulse 1 s 10 s dc TJ = 25/C0095C 10 ms 1 ms 100 Power (W) Single Pulse Power, Junction-to-Ambient Time (sec) 11 010−110−210−3

Document Number: 72022 S-32621—Rev. C, 29-Dec-03 www.vishay.com TYPICAL CHARACTERISTICS (25/C0095C UNLESS NOTED) MOSFET CHANNEL 1 10−3 10−2 11 010−110−4 0.1 0.01 0.2 0.1 0.05 0.02 Single Pulse Duty Cycle = 0.5 Normalized Thermal Transient Impedance, Junction-to-Foot Square Wave Pulse Duration (sec) Normalized Effective Transient Thermal Impedance 10−3 10−2 1 10 60010−110−4 100 0.1 0.01 0.2 0.1 0.05 0.02 Single Pulse Duty Cycle = 0.5 Normalized Thermal Transient Impedance, Junction-to-Ambient Square Wave Pulse Duration (sec) Normalized Effective Transient Thermal Impedance 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 93/C0095C/W 3. TJM − TA = PDMZthJA(t) Notes: 4. Surface Mounted PDM

www.vishay.com Document Number: 72022 S-32621—Rev. C, 29-Dec-03 TYPICAL CHARACTERISTICS (25/C0095C UNLESS NOTED) MOSFET CHANNEL-2 400 800 1200 1600 2000 0 5 10 15 20 25 30 02468 1 0 VGS = 10 thru 4 V TC = 125/C0095C −55/C0095C 25/C0095C Output Characteristics Transfer Characteristics VDS − Drain-to-Source Voltage (V) − Drain Current (A)I D VGS − Gate-to-Source Voltage (V) − Drain Current (A)I D 3 V − On-Resistance (rDS(on) /C0087) 0.6 0.8 1.0 1.2 1.4 1.6 1.8 −50 −25 0 25 50 75 100 125 150 0 5 10 15 20 25 0.000 0.008 0.016 0.024 0.032 0.040 0 5 10 15 20 25 30 VDS − Drain-to-Source Voltage (V) Crss VDS = 15 V ID = 7.5 A ID − Drain Current (A) VGS = 10 V ID = 7.5 A VGS = 10 V VGS = 4.5 V Gate Charge On-Resistance vs. Drain Current − Gate-to-Source Voltage (V) Qg − Total Gate Charge (nC) C − Capacitance (pF) V GS Capacitance On-Resistance vs. Junction Temperature TJ − Junction Temperature (/C0095C) (Normalized) − On-Resistance (rDS(on) /C0087) Coss Ciss

Document Number: 72022 S-32621—Rev. C, 29-Dec-03 www.vishay.com TYPICAL CHARACTERISTICS (25/C0095C UNLESS NOTED) MOSFET CHANNEL-2 0.00 0.01 0.02 0.03 0.04 0.05 02468 1 0 TJ = 150/C0095C TJ = 25/C0095C ID = 7.5 A 0.1 Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage − On-Resistance (rDS(on) /C0087) VSD − Source-to-Drain Voltage (V) V GS − Gate-to-Source Voltage (V) − Source Current (A)I S 100 Power (W) Single Pulse Power, Junction-to-Ambient Time (sec) −0.4 −0.3 −0.2 −0.1 −0.0 0.1 0.2 0.3 0.4 −50 −25 0 25 50 75 100 125 150 ID = 250 /C0109A Threshold Voltage Variance (V)VGS(th) TJ − Temperature (/C0095C) 11 010−110−210−3 Safe Operating Area, Junction-to-Foot 100 0.1 1 10 100 0.01 − Drain Current (A)I D 0.1 Limited by rDS(on) TC = 25/C0095C Single Pulse VDS − Drain-to-Source Voltage (V) 100 ms 1 s 10 s dc 10 ms 1 ms

www.vishay.com Document Number: 72022 S-32621—Rev. C, 29-Dec-03 TYPICAL CHARACTERISTICS (25/C0095C UNLESS NOTED) MOSFET CHANNEL-2 10−3 10−2 11 010−110−4 0.1 0.01 0.2 0.1 0.05 0.02 Single Pulse Duty Cycle = 0.5 Normalized Thermal Transient Impedance, Junction-to-Foot Square Wave Pulse Duration (sec) Normalized Effective Transient Thermal Impedance 10−3 10−2 1 10 60010−110−4 100 0.1 0.01 0.2 0.1 0.05 0.02 Single Pulse Duty Cycle = 0.5 Normalized Thermal Transient Impedance, Junction-to-Ambient Square Wave Pulse Duration (sec) Normalized Effective Transient Thermal Impedance 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 93/C0095C/W 3. TJM − TA = PDMZthJA(t) Notes: 4. Surface Mounted PDM

Document Number: 72022 S-32621—Rev. C, 29-Dec-03 www.vishay.com TYPICAL CHARACTERISTICS (25/C0095C UNLESS NOTED) SCHOTTKY VDS − Drain-to-Source Voltage (V) C − Capacitance (pF) Capacitance 0 25 50 75 100 125 150 120 160 200 0 6 12 18 24 30 0.0001 Reverse Current vs. Junction Temperature − Reverse Current (mA)I R TJ − Temperature (/C0095C) Forward Voltage Drop − Forward Current (A)I F VF − Forward Voltage Drop (V) TJ = 150/C0095C TJ = 25/C0095C30 V 24 V 0.001 0.01 0.1 Coss