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Document overview

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Technical content

Features

  • ExtremelylowlossesduetoverylowFOMRdson*QgandEoss
  • Veryhighcommutationruggedness
  • Easytouse/drive
  • Pb-freeplating,Halogenfreemoldcompound
  • Qualifiedforstandardgradeapplications

Applications

Adapter,LCD&PDPTVandIndoorlighting Table1KeyPerformanceParameters Parameter Value Unit VDS @ Tj,max 750 V RDS(on),max 1400 mΩ Qg.typ 10.5 nC Id.typ 5.4 A ID,pulse 8.3 A Eoss@400V 1.15 µJ Type/OrderingCode Package Marking RelatedLinks IPD70R1K4CE PG-TO 252 IPS70R1K4CE PG-TO 251 70S1K4CE see Appendix A

700VCoolMOSªCEPowerTransistor IPD70R1K4CE,IPS70R1K4CE Rev.2.0,2016-02-16Final Data Sheet TableofContents

700VCoolMOSªCEPowerTransistor IPD70R1K4CE,IPS70R1K4CE Rev.2.0,2016-02-16Final Data Sheet 1Maximumratings atTj=25°C,unlessotherwisespecified Table2Maximumratings Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Continuous drain current1) ID 5.4

3.4 A TC=25°C

TC=100°C Pulsed drain current2) ID,pulse - - 8.3 A TC=25°C Avalanche energy, single pulse EAS - - 26 mJ ID=0.6A; VDD=50V; see table 10 Avalanche energy, repetitive EAR - - 0.10 mJ ID=0.6A; VDD=50V; see table 10 Avalanche current, repetitive IAR - - 0.6 A - MOSFET dv/dt ruggedness dv/dt - - 50 V/ns VDS=0...480V Gate source voltage (static) VGS -20 - 20 V static; Gate source voltage (dynamic) VGS -30 - 30 V AC (f>1 Hz) Power dissipation Ptot - - 53 W TC=25°C Storage temperature Tstg -40 - 150 °C - Operating junction temperature Tj -40 - 150 °C - Continuous diode forward current IS - - 3.8 A TC=25°C Diode pulse current2) IS,pulse - - 8.3 A TC=25°C Reverse diode dv/dt3) dv/dt - - 15 V/ns VDS=0...400V,ISD<=IS,Tj=25°C see table 8 Maximum diode commutation speed dif/dt - - 500 A/µs VDS=0...400V,ISD<=IS,Tj=25°C see table 8 1) Limited by Tj max. Maximum duty cycle D=0.50 2) Pulse width tp limited by Tj,max 3)IdenticallowsideandhighsideswitchwithidenticalRG

700VCoolMOSªCEPowerTransistor IPD70R1K4CE,IPS70R1K4CE Rev.2.0,2016-02-16Final Data Sheet 2Thermalcharacteristics Table3Thermalcharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Thermal resistance, junction - case RthJC - - 2.37 °C/W - Thermal resistance, junction - ambient RthJA - - 62 °C/W leaded Soldering temperature, wavesoldering only allowed at leads Tsold - - 260 °C 1.6mm (0.063 in.) from case for 10s

700VCoolMOSªCEPowerTransistor IPD70R1K4CE,IPS70R1K4CE Rev.2.0,2016-02-16Final Data Sheet 3Electricalcharacteristics atTj=25°C,unlessotherwisespecified Table4Staticcharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Drain-source breakdown voltage V(BR)DSS 700 - - V VGS=0V,ID=1mA Gate threshold voltage V(GS)th 2.5 3.0 3.5 V VDS=VGS,ID=0.1mA Zero gate voltage drain current IDSS - µA VDS=700V,VGS=0V,Tj=25°C VDS=700V,VGS=0V,Tj=150°C Gate-source leakage current IGSS - - 100 nA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) 1.26 3.28 1.40 - Ω VGS=10V,ID=1A,Tj=25°C VGS=10V,ID=1A,Tj=150°C Gate resistance RG - 6.5 - Ω f=1MHz,opendrain Table5Dynamiccharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Input capacitance Ciss - 225 - pF VGS=0V,VDS=100V,f=1MHz Output capacitance Coss - 18 - pF VGS=0V,VDS=100V,f=1MHz Effective output capacitance, energy related1) Co(er) - 10 - pF VGS=0V,VDS=0...480V Effective output capacitance, time related2) Co(tr) - 42 - pF ID=constant,VGS=0V,VDS=0...480V Turn-on delay time td(on) - 7.7 - ns VDD=400V,VGS=13V,ID=1.5A, RG=10.2Ω ;seetable9 Rise time tr - 5.9 - ns VDD=400V,VGS=13V,ID=1.5A, RG=10.2Ω ;seetable9 Turn-off delay time td(off) - 33 - ns VDD=400V,VGS=13V,ID=1.5A, RG=10.2Ω ;seetable9 Fall time tf - 18.2 - ns VDD=400V,VGS=13V,ID=1.5A, RG=10.2Ω ;seetable9 Table6Gatechargecharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Gate to source charge Qgs - 1.3 - nC VDD=480V,ID=1.5A,VGS=0to10V Gate to drain charge Qgd - 5.8 - nC VDD=480V,ID=1.5A,VGS=0to10V Gate charge total Qg - 10.5 - nC VDD=480V,ID=1.5A,VGS=0to10V Gate plateau voltage Vplateau - 5.4 - V VDD=480V,ID=1.5A,VGS=0to10V 1)Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to480V 2)Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfrom0to480V

700VCoolMOSªCEPowerTransistor IPD70R1K4CE,IPS70R1K4CE Rev.2.0,2016-02-16Final Data Sheet Table7Reversediodecharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Diode forward voltage VSD - 0.9 - V VGS=0V,IF=1.5A,Tj=25°C Reverse recovery time trr - 200 - ns VR=400V,IF=1.5A,diF/dt=100A/µs; see table 8 Reverse recovery charge Qrr - 0.9 - µC VR=400V,IF=1.5A,diF/dt=100A/µs; see table 8 Peak reverse recovery current Irrm - 8 - A VR=400V,IF=1.5A,diF/dt=100A/µs; see table 8

700VCoolMOSªCEPowerTransistor IPD70R1K4CE,IPS70R1K4CE Rev.2.0,2016-02-16Final Data Sheet 4Electricalcharacteristicsdiagrams Diagram1:Powerdissipation(NonFullPAK) TC[°C] Ptot[W] 100 125 150 Ptot=f(TC) Diagram2:Safeoperatingarea(NonFullPAK) VDS[V] ID[A] 100 101 102 103 10-3 10-2 10-1 100 101 1 µs 10 µs 100 µs 1 ms DC ID=f(VDS);TC=25°C;D=0;parameter:tp Diagram3:Safeoperatingarea(NonFullPAK) VDS[V] ID[A] 100 101 102 103 10-3 10-2 10-1 100 101 1 µs 10 µs 100 µs 1 ms DC ID=f(VDS);TC=80°C;D=0;parameter:tp Diagram4:Max.transientthermalimpedance(NonFullPAK) tp[s] ZthJC[K/W] 10-5 10-4 10-3 10-2 10-1 10-2 10-1 100 101 0.5 0.2 0.1 0.05 0.02 0.01 single pulse ZthJC=f(tP);parameter:D=tp/T

700VCoolMOSªCEPowerTransistor IPD70R1K4CE,IPS70R1K4CE Rev.2.0,2016-02-16Final Data Sheet Diagram5:Typ.outputcharacteristics VDS[V] ID[A] 20 V 10 V 8 V 7 V 6 V 5.5 V 5 V 4.5 V ID=f(VDS);Tj=25°C;parameter:VGS Diagram6:Typ.outputcharacteristics VDS[V] ID[A] 20 V 10 V 8 V 7 V 6 V 5.5 V 5 V 4.5 V ID=f(VDS);Tj=125°C;parameter:VGS Diagram7:Typ.drain-sourceon-stateresistance ID[A] RDS(on)[Ω ] 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 5.5V 6.5 V 7 V 10 V RDS(on)=f(ID);Tj=125°C;parameter:VGS Diagram8:Drain-sourceon-stateresistance Tj[°C] RDS(on)[Ω ] -50 -25 100 125 150 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 98% typ RDS(on)=f(Tj);ID=1.2A;VGS=10V

700VCoolMOSªCEPowerTransistor IPD70R1K4CE,IPS70R1K4CE Rev.2.0,2016-02-16Final Data Sheet Diagram9:Typ.transfercharacteristics VGS[V] ID[A] 150 °C 25 °C ID=f(VGS);VDS=20V;parameter:Tj Diagram10:Typ.gatecharge Qgate[nC] VGS[V] 480 V 120 V VGS=f(Qgate);ID=1.5Apulsed;parameter:VDD Diagram11:Forwardcharacteristicsofreversediode VSD[V] IF[A] 0.0 0.5 1.0 1.5 2.0 10-1 100 101 102 25 °C 125 °C IF=f(VSD);parameter:Tj Diagram12:Avalancheenergy Tj[°C] EAS[mJ] 100 125 150 EAS=f(Tj);ID=0.5A;VDD=50V

700VCoolMOSªCEPowerTransistor IPD70R1K4CE,IPS70R1K4CE Rev.2.0,2016-02-16Final Data Sheet Diagram13:Drain-sourcebreakdownvoltage Tj[°C] VBR(DSS)[V] -75 -50 -25 100 125 150 175 620 640 660 680 700 720 740 760 780 800 VBR(DSS)=f(Tj);ID=1.0mA Diagram14:Typ.capacitances VDS[V] C[pF] 100 200 300 400 500 100 101 102 103 104 Ciss Coss Crss C=f(VDS);VGS=0V;f=1MHz Diagram15:Typ.Cossstoredenergy VDS[V] Eoss[µJ] 100 200 300 400 500 0.0 0.5 1.0 1.5 Eoss=f(VDS)

700VCoolMOSªCEPowerTransistor IPD70R1K4CE,IPS70R1K4CE Rev.2.0,2016-02-16Final Data Sheet 5TestCircuits Table8Diodecharacteristics Test circuit for diode characteristics Diode recovery waveform t V ,I Irrm IF VDS 10 %Irrm trr tF tS QF QS dIF / dt dIrr / dt VDS(peak) Qrr = QF +QS trr =tF +tS VDS IF VDS IF Rg1 Rg 2 Rg1 = Rg 2 Table9Switchingtimes Switching times test circuit for inductive load Switching times waveform VDS VGS td(on) td(off)tr ton tf toff 10% 90% VDS VGS Table10Unclampedinductiveload Unclamped inductive load test circuit Unclamped inductive waveform VDS V(BR)DS ID VDS VDSID

700VCoolMOSªCEPowerTransistor IPD70R1K4CE,IPS70R1K4CE Rev.2.0,2016-02-16Final Data Sheet 6PackageOutlines 2.0 ISSUE DATE EUROPEAN PROJECTION0 4mm2.0SCALE0 REVISION01-09-201505 DOCUMENT NO.Z8B00003328 *) mold flash not includedMILLIMETERS 4.57 (BSC)2.29 (BSC) D NHE1e1eED1 L31.180.510.90 5.02 9.40 6.404.705.97 b3ADIMb2cbc2 A15.00 0.00 0.0460.0200.035 0.1980.2520.1850.235 0.3701.701.00 5.605.846.226.73 0.220 0.039 0.2300.265 0.049 0.245 0.413 0.0005.50 INCHESMIN 0.217 L Figure1OutlinePG-TO252,dimensionsinmm/inches

700VCoolMOSªCEPowerTransistor IPD70R1K4CE,IPS70R1K4CE Rev.2.0,2016-02-16Final Data Sheet DIMA 2.0 21-10-2015ISSUE DATE EUROPEAN PROJECTION 0.031 0.0180.0180.235 0.025 0.1810.250 0.118 0.0860.195 0.035 0.026 0.198 MILLIMETERS MIN 0.80 2.18 0.64 5.04 5.21 1.28 3.60 0.89 6.73 0.89 5.50 5.55 MIN INCHESMAX 0.265 0.2170.219 02.0SCALE 4mm 0DOCUMENT NO.Z8B00003329 REVISION060.031 0.80 1.250.049 A1bb2b4cc2DD1EE1ee1NLL1L2 4.95 Figure2OutlinePG-TO251,dimensionsinmm/inches

700VCoolMOSªCEPowerTransistor IPD70R1K4CE,IPS70R1K4CE Rev.2.0,2016-02-16Final Data Sheet 7AppendixA Table11RelatedLinks

  • IFXCoolMOSTMCEWebpage:www.infineon.com
  • IFXCoolMOSTMCEapplicationnote:www.infineon.com
  • IFXCoolMOSTMCEsimulationmodel:www.infineon.com
  • IFXDesigntools:www.infineon.com

700VCoolMOSªCEPowerTransistor IPD70R1K4CE,IPS70R1K4CE Rev.2.0,2016-02-16Final Data Sheet RevisionHistory IPD70R1K4CE, IPS70R1K4CE Revision:2016-02-16,Rev.2.0 Previous Revision Revision Date Subjects (major changes since last revision) 2.0 2016-02-16 Release of final version TrademarksofInfineonTechnologiesAG AURIX™,C166™,CanPAK™,CIPOS™,CoolGaN™,CoolMOS™,CoolSET™,CoolSiC™,CORECONTROL™,CROSSAVE™,DAVE™,DI-POL™,DrBlade™, EasyPIM™,EconoBRIDGE™,EconoDUAL™,EconoPACK™,EconoPIM™,EiceDRIVER™,eupec™,FCOS™,HITFET™,HybridPACK™,Infineon™, ISOFACE™,IsoPACK™,i-Wafer™,MIPAQ™,ModSTACK™,my-d™,NovalithIC™,OmniTune™,OPTIGA™,OptiMOS™,ORIGA™,POWERCODE™, PRIMARION™,PrimePACK™,PrimeSTACK™,PROFET™,PRO-SIL™,RASIC™,REAL3™,ReverSave™,SatRIC™,SIEGET™,SIPMOS™,SmartLEWIS™, SOLIDFLASH™,SPOC™,TEMPFET™,thinQ™,TRENCHSTOP™,TriCore™. TrademarksupdatedAugust2015 OtherTrademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com Publishedby InfineonTechnologiesAG 81726München,Germany ©2015InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.With respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication ofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout limitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered.