70N06T-TA3-L

70N06 UTC | Alldatasheet

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UNISONIC TECHNOLOGIES CO., LTD 70N06 Power MOSFET www.unisonic.com.tw 1 of 8 Copyright © 2009 Unisonic Technologies Co., Ltd QW-R502-089.C

70 Amps, 60 Volts

„ DESCRIPTION The UTC 70N06 is n-channel enhancement mode power field effect transistors with stable off-st ate characteristics, fast switching speed, low thermal resistance, usually used at telecom and computer application. „ FEATURES * RDS(ON) = 15mΩ@VGS = 10 V * Ultra low gate charge ( typical 90 nC ) * Low reverse transfer Capacitance ( C RSS = typical 80 pF ) * Fast switching capability * Avalanche energy specified * Improved dv/dt capability „ SYMBOL 1.Gate 3.Source 2.Drain TO-220 TO-262 TO-263 „ ORDERING INFORMATION Ordering Number Pin Assignment Lead Free Halogen Free Package 1 2 3 Packing 70N06L-TA3-T 70N06G-TA3-T TO-220 G D S Tube 70N06L-T2Q-T 70N06G-T2Q-T TO-262 G D S Tube 70N06L-TQ2-T 70N06G-TQ2-T TO-263 G D S Tube 70N06L-TQ2-R 70N06G-TQ2-R TO-263 G D S Tape Reel Note: Pin Assignment: G: Gate D: Drain S: Source (1) R: Tape Reel, T: Tube (2) TA3: TO-220, T2Q: TO-262, TQ2: TO-263 (3) G: Halogen Free, L: Lead Free 70N06L-TA3-T (1) Packing Type (2) Package Type (3) Lead Plating

UNISONIC TECHNOLOGIES CO., LTD 2 of 8 www.unisonic.com.tw Q W - R 5 0 2 - 0 8 9 . C „ ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage V DSS 60 V Gate-Source Voltage V GSS ±20 V TC = 25°C 70 A Continuous Drain Current TC = 100°C ID 56 A Drain Current Pulsed (Note 2) I DM 280 A Single Pulsed (Note 3) E AS 600 mJ Avalanche Energy Repetitive (Note 2) E AR 20 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 10 V/ns Power Dissipation P D 200 W Junction Temperature T J +150 °C Storage Temperature T STG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. Repeativity rating: pulse widt h limited by junction temperature L=0.24mH, I AS=70A, VDD=25V, RG=20Ω, Starting TJ=25°C I SD≤48A, di/dt≤300A/μs, VDD≤BVDSS, Starting TJ=25°C „ THERMAL DATA PARAMETER SYMBOL RATINGS UNIT Junction to Ambient θJA 62 °C/W Junction to Case θJC 1.2 °C/W „ ELECTRICAL CHARACTERISTICS (TC =25℃, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BV DSS V GS = 0 V, ID = 250 μA 60 V Drain-Source Leakage Current I DSS V DS = 60 V, VGS = 0 V 1 μA Forward V GS = 20V, VDS = 0 V 100 nAGate-Source Leakage Current Reverse IGSS VGS = -20V, VDS = 0 V -100 nA Breakdown Voltage Temperature Coefficient BV△ DSS/△TJ ID = 1mA, Referenced to 25°C 0.08 V/°C ON CHARACTERISTICS Gate Threshold Voltage V GS(TH) V DS = VGS, ID = 250 μA 2.0 4.0 V Static Drain-Source On-State Resistance R DS(ON) V GS = 10 V, ID = 35 A 12 15 m Ω DYNAMIC CHARACTERISTICS Input Capacitance C ISS 3300 pF Output Capacitance C OSS 530 pF Reverse Transfer Capacitance C RSS VGS = 0 V, VDS = 25 V f = 1MHz 80 pF SWITCHING CHARACTERISTICS Turn-On Delay Time t D(ON) 12 ns Turn-On Rise Time t R 79 ns Turn-Off Delay Time t D(OFF) 80 ns Turn-Off Fall Time t F VDD = 30V, VGS=10V,ID =70 A (Note 1, 2) 52 ns Total Gate Charge Q G 90 140 nC Gate-Source Charge Q GS 20 35 nC Gate-Drain Charge (Miller Charge) Q GD VDS = 60V, VGS = 10 V, ID = 48A (Note 1, 2) 30 45 nC

UNISONIC TECHNOLOGIES CO., LTD 3 of 8 www.unisonic.com.tw Q W - R 5 0 2 - 0 8 9 . C „ ELECTRICAL CHARACTERISTICS(Cont.) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Drain-Source Diode Forward Voltage V SD V GS = 0 V, IS = 70A 1.4 V Maximum Continuous Drain-Source Diode Forward Current IS 70 Maximum Pulsed Drain-Source Diode Forward Current ISM 280 A Reverse Recovery Time t RR 90 ns Reverse Recovery Charge Q RR VGS = 0 V, IS = 70A dIF / dt = 100 A/μs 300 μC Notes: 1. Pulse Test: Pulse Width ≤300μs, Duty Cycle≤2% 2. Essentially independent of operating temperature.

UNISONIC TECHNOLOGIES CO., LTD 4 of 8 www.unisonic.com.tw Q W - R 5 0 2 - 0 8 9 . C „ TEST CIRCUITS AND WAVEFORMS Same Type as D.U.T. L VDDDriver VGS RG VDS D.U.T. + * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test 1A Peak Diode Recovery dv/dt Test Circuit P. W. PeriodD=VGS (Driver) ISD (D.U.T.) IFM, Body Diode Forward Current di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt Body Diode Forward Voltage Drop VDD 10V VDS (D.U.T.) VGS= P.W. Period 1B Peak Diode Recovery dv/dt Waveforms

UNISONIC TECHNOLOGIES CO., LTD 5 of 8 www.unisonic.com.tw Q W - R 5 0 2 - 0 8 9 . C „ TEST CIRCUITS AND WAVEFORMS (Cont.) VGS D.U.T. RG 10V VDS RL VDD Pulse Width≤1μs Duty Factor≤0.1% VDS 90% 10% VGS tD(ON) tR tD(OFF) tF Fig. 2A Switching Test Circuit Fig. 2B Switching Waveforms 50kΩ 0.3μF DUT VDS Same Type as D.U.T. 0.2μF 12V VGS 1mA 10V Charge QGS QGD QG VGS Fig. 3A Gate Charge Test Circuit Fig. 3B Gate Charge Waveform D.U.T. R G 10V VDS L VDD tp Fig. 4A Unclamped Inductive Switching Test Circuit Fig. 4B Unclamped Inductive Switching Waveforms

UNISONIC TECHNOLOGIES CO., LTD 6 of 8 www.unisonic.com.tw Q W - R 5 0 2 - 0 8 9 . C „ TYPICAL CHARACTERISTICS Drain Current, ID (A) Drain Current, ID (A) 150°С 25°С Drain-Source On-Resistance, RDS(ON) (mΩ) Reverse Drain Current, ISD (A) Capacitance (pF) Gate-to-Source Voltage, VGS (V)

UNISONIC TECHNOLOGIES CO., LTD 7 of 8 www.unisonic.com.tw Q W - R 5 0 2 - 0 8 9 . C „ TYPICAL CHARACTERISTICS Drain-Source Breakdown Voltage, BVDSS(Normalized) (V) Drain-Source On-Resistance, RDS(ON), (Normalized) (Ω) Drain Current , ID,(A) Drain Current, ID (A) Thermal Response, ZθJC (t)

UNISONIC TECHNOLOGIES CO., LTD 8 of 8 www.unisonic.com.tw Q W - R 5 0 2 - 0 8 9 . C UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.