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UNISONIC TECHNOLOGIES CO., LTD 75N75 Power MOSFET www.unisonic.com.tw 1 of 6 Copyright © 2013 Unisonic Technologies Co., Ltd. QW-R502-097.F 80A, 75V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 75N75 is n-channel enhancement mode power field effect transistors with stable off-st ate characteristics, fast switching speed, low thermal resistance, usually used at telecom and computer application.  FEATURES * RDS(ON)=11mΩ @VGS=10V, ID=40A * Ultra low gate charge ( typical 117 nC ) * Fast switching capability * Low reverse transfer Capacitance (C RSS= typical 240 pF ) * Avalanche energy Specified * Improved dv/dt capability, high ruggedness  SYMBOL TO-220 TO-220F TO-220F1 TO-220F2 TO-263  ORDERING INFORMATION Ordering Number Package Pin Assignment Packing Lead Free Halogen Free 1 2 3 75N75L-TA3-T 75N75G-TA3-T TO-220 G D S Tube 75N75L-TF1-T 75N75G-TF1-T TO-220F1 G D S Tube 75N75L-TF2-T 75N75G-TF2-T TO-220F2 G D S Tube 75N75L-TF3-T 75N75G-TF3-T TO-220F G D S Tube 75N75L-TQ2-T 75N75G-TQ2-T TO-263 G D S Tube 75N75L-TQ2-R 75N75G-TQ2-R TO-263 G D S Tape Reel Note: Pin Assignment: G: Gate D: Drain S: Source

UNISONIC TECHNOLOGIES CO., LTD 2 of 6 www.unisonic.com.tw Q W - R 5 0 2 - 0 9 7 . F  ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 75 V Gate-Source Voltage V GSS ±20 V Continuous Drain Current T C = 25°C I D 80 A Pulsed Drain Current (Note 2) I DM 320 A Single Pulsed Avalanche Energy (Note 3) E AS 700 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 12 V/ns Power Dissipation TO-220/TO-263 PD 300 W TO-220F/ TO-220F1 48 W TO-220F2 50 W Junction Temperature T J +175 °C Storage Temperature T STG -55 ~ +175 °C Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings onl y and functional device operation is not implied. 2. Pulse width limited by safe operating area 3. Starting T J=25°C, ID=40A, VDD=37.5V 4. I SD≤80A, di/dt≤300A/µs, VDD≤BVDSS, TJ≤TJMAX  THERMAL DATA PARAMETER SYMBOL RATINGS UNIT Junction to Ambient θJA 62.5 °C/W Junction to Case TO-220/TO-263 θJC 0.5 °C/W TO-220F/ TO-220F1 2.6 °C/W TO-220F2 2.5 °C/W

UNISONIC TECHNOLOGIES CO., LTD 3 of 6 www.unisonic.com.tw Q W - R 5 0 2 - 0 9 7 . F  ELECTRICAL CHARACTERISTICS (TC = 25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BV DSS V GS = 0 V, ID = 250 µA 75 V Drain-Source Leakage Current I DSS V DS = 75 V, VGS = 0 V 1 µA Gate-Source Leakage Current Forward IGSS VGS = 20V, VDS = 0 V 100 nA Reverse V GS = -20V, VDS = 0 V -100 nA ON CHARACTERISTICS Gate Threshold Voltage V GS(TH) V DS = VGS, ID = 250 µA 2.0 3.0 4.0 V Static Drain-Source On-State Resistance R DS(ON) V GS = 10 V, ID = 40 A 9.5 11 m Ω DYNAMIC CHARACTERISTICS Input Capacitance C ISS VGS = 0 V, VDS = 25 V f = 1MHz 3700 pF Output Capacitance C OSS 773 pF Reverse Transfer Capacitance C RSS 86 pF SWITCHING CHARACTERISTICS Turn-On Delay Time t D(ON) VDD = 37.5V, ID =45A, VGS=10V, RG=4.7Ω 133 150 ns Turn-On Rise Time t R 208 232 ns Turn-Off Delay Time t D(OFF) 354 370 ns Turn-Off Fall Time t F 246 260 ns Total Gate Charge Q G VDS = 60V, VGS = 10 V ID = 80A 430 440 nC Gate-Source Charge Q GS 70 nC Gate-Drain Charge Q GD 102 nC SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage (Note 2) V SD V GS = 0 V, IS = 80A 1.5 V Continuous Source Current I S 80 A Pulsed Source Current (Note 1) I SM 320 A Reverse Recovery Time t RR IS = 80A, VDD = 25 V dIF / dt = 100 A/µs 132 ns Reverse Recovery Charge Q RR 660 µC Note: 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration=300µs, duty cycle 1.5%

UNISONIC TECHNOLOGIES CO., LTD 4 of 6 www.unisonic.com.tw Q W - R 5 0 2 - 0 9 7 . F  TEST CIRCUITS AND WAVEFORMS Same Type as D.U.T. L VDDDrive r VGS RG VD S D.U.T. + * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test P. W. PeriodD=VGS (Driver) ISD (D.U.T.) IFM, Body Diode Forward Current di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt Body Diode Forward Voltage Drop VDD 10V VDS (D.U.T.) VGS= P.W. Period 1A Peak Diode Recovery dv/dt Test Circuit 1B Peak Diode Recovery dv/dt Waveforms

UNISONIC TECHNOLOGIES CO., LTD 5 of 6 www.unisonic.com.tw Q W - R 5 0 2 - 0 9 7 . F  TEST CIRCUITS AND WAVEFORMS (Cont.) 2A Switching Test Circuit 2 B S w i t c h i n g W a v e f o r m s

3 A G a t e C h a r g e T e s t C i r c u i t 3 B G a t e C h a r g e W a v e f o r m

4A Unclamped Inductive Switching Test Circuit 4B Unclamped Inductive Switching Waveforms

UNISONIC TECHNOLOGIES CO., LTD 6 of 6 www.unisonic.com.tw Q W - R 5 0 2 - 0 9 7 . F  TYPICAL CHARACTERISTICS Drain Current vs. Drain-Source Breakdown Voltage Drain Current, ID (µA) Drain-Source Breakdown Voltage, BVDSS(V) 250 100 150 200 300 40 80 100 350 400 450 0.500 Drain Current vs. Gate Threshold Voltage Drain Current, ID (µA) Gate Threshold Voltage, VTH (V) 250 100 150 200 300 1500 Drain-Source On-State Resistance Characteristics Drain Current, ID (A) Drain to Source Voltage, VDS (mV) 10050 200 0.20 Drain Current vs. Source to Drain Voltage Drain Current, ID (A) Source to Drain Voltage, VSD (V) 0.80.4 0.6 1.0 1.8 1.6 1.4 1.2 0.8 0.6 0.4 0.2 VGS=10V ID=20A VGS=10V ID=1A UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.