70HF120 THINKISEMI | Alldatasheet
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70A/1200V Metal Stud Type Rectifier Diodes 70HF120/70HFR120 © 2006 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com/ Page 1/5Rev.08C DO-203AB (DO-5) Unit:mm(inch) ELECTRICAL SPECIFICATIONS MAJOR RATINGS AND CHARACTERISTICS PARAMETER TEST CONDITIONS 70HF series/70HFR series UNITS10 TO 120 140/160 I F(AV) 70 70 A T C 140 110 °C I F(RMS) 110 110 A I FSM
50 Hz 1200 1200 A60 Hz 1250 1250
I t 50 Hz 7100 7100 A s60 Hz 6450 6450 V RRM Range 100 to 1200 1400/1600 V T J -65 to +180 -65 to +150 °C VOLTAGE RATINGS TYPE NUMBER VOLTAGE CODE V RRM , MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE V V RSM , MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V V R(BR) , MINIMUM AVALANCHE VOLTAGE V I RRM MAXIMUM AT T J = T J MAXIMUM mA 70HF10/70HFR10 10 100 200 200 1520 200 300 300 30 300 400 400 40 400 500 500 60 600 720 725 980 800 960 950 100 1000 1200 1150 120 1200 1440 1350 140 1400 1650 1550 4.5160 1600 1900 1750 70HF20/70HFR20 70HF30/70HFR30 70HF40/70HFR40 70HF60/70HFR60 70HF80/70HFR80 70HF100/70HFR100 70HF120/70HFR120 70HF140/70HFR140 70HF160/70HFR160 A POLARITY Normal Reverse C C A
© 2006 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com/ Page 2/5Rev.08C Notes (1) Recommended for pass-through holes (2) Recommended for holed threaded heatsinks Note
- The table above shows the increment of thermal resistance R thJC when devices operate at different conduction angles than DC FORWARD CONDUCTION PARAMETER SYMBOL TEST CONDITIONS 70HF-/70HFR- UNITS10 to 120 140/160 Maximum average forward current at case temperature I F(AV) 180° conduction, half sine wave 70 A 140 110 °C Maximum RMS forward current I F(RMS) 110 A Maximum peak, one cycle forward, non-repetitive surge current I FSM t = 10 ms No voltage reapplied Sinusoidal half wave, initial T J = T J maximum 1200 At = 8.3 ms 1250 t = 10 ms 100 % V RRM reapplied 1000 t = 8.3 ms 1050 Maximum I t for fusing I t t = 10 ms No voltage reapplied 7100 A st = 8.3 ms 6450 t = 10 ms 100 % V RRM reapplied 5000 t = 8.3 ms 4550 Maximum I t for fusing I t t = 0.1 ms to 10 ms, no voltage reapplied 71 000 A Low level value of threshold voltage V F(TO)1 (16.7 % x x I F(AV) < I < x I F(AV) ), T J = T J maximum 0.79 VHigh level value of threshold voltage V F(TO)2 (I > x I F(AV) ), T J = T J maximum 1.00 Low level value of forward slope resistance r (16.7 % x x I F(AV) < I < x I F(AV) ), T J = T J maximum 2.33 mHigh level value of forward slope resistance r (I > x I F(AV) ), T J = T J maximum 1.53 Maximum forward voltage drop V FM I pk = 220 A, T J = 25 °C, t p = 400 μs rectangular wave 1.35 1.46 V THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS 70HF-/70HFR- UNITS10 to 120 140/160 Maximum junction and storage temperature range T J , T Stg -65 to +180 -65 to +150 °C Maximum thermal resistance, junction to case R thJC DC operation 0.45 K/W Thermal resistance, case to heatsink R thCS Mounting surface, smooth, flat and greased 0.25 Maximum allowable mounting torque (+0 %, -10 %) Not lubricated thread, tighting on nut (1) 3.4 (30) N · m (lbf · in) Lubricated thread, tighting on nut (1) 2.3 (20) Not lubricated thread, tighting on hexagon (2) 4.2 (37) Lubricated thread, tighting on hexagon (2) 3.2 (28) Approximate weight 17 g 0.6 oz. Case style See dimensions - link at the end of datasheet DO-203AB (DO-5) thJC CONDUCTION CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION TEST CONDITIONS UNITS 180° 0.08 0.06 T J = T J maximum K/W 120° 0.10 0.11 90° 0.13 0.14 60° 0.19 0.20 30° 0.30 0.30 70HF120/70HFR120
© 2006 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com/ Page 3/5Rev.08C Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics Fig. 3 - Current Ratings Characteristics Fig. 4 - Current Ratings Characteristics Fig. 5 - Forward Power Loss Characteristics 130 140 150 160 170 180 0 10 20 30 40 50 60 70 80 30° 60° 90° 120° 180° Conduction angle 70HF(R) series (100 V to 1200 V) R thJC (DC) = 0.45 K/W Average Forward Current (A) Maximum Allowable Case Temperature (°C) Average Forward Current (A) Maximum Allowable Case Temperature (°C) 120 130 140 150 160 170 180 0 20 40 60 80 100 120 DC 30° 60° 90° 120° 180° Conduction period 70HF(R) series (100 V to 1200 V) R thJC (DC) = 0.45 K/W Average Forward Current (A) Maximum Allowable Case Temperature (°C) 100 110 120 130 140 150 0 10 20 30 40 50 60 70 80 30° 60° 90° 120° 180° Conduction angle 70HF(R) series (1400 V to 1600 V) R thJC (DC) = 0.45 K/W Average Forward Current (A) Maximum Allowable Case Temperature (°C) 100 110 120 130 140 150 0 20 40 60 80 100 120 DC 30° 60° 90° 120° 180° Conduction period 70HF(R) series (1400 V to 1600 V) R thJC (DC) = 0.45 K/W 0 20 40 60 80 100 120 140 160 180 0 10 20 30 40 50 60 70 80 RMS limit Conduction angle 180° 120° 90° 60° 30° 70HF(R) series (100 V to 1200 V) T = 180 °C J Average Forward Current (A) Maximum Average Forward Power Loss (W) Maximum Allowable Ambient Temperature (°C) R thSA = 0.3 K/W - ΔR
0.5 K/W
0.7 K/W
1 K/W
3 K/W
1.5 K/W
2 K/W
4 K/W
5 K/W
© 2006 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com/ Page 4/5Rev.08C Fig. 6 - Forward Power Loss Characteristics Fig. 7 - Forward Power Loss Characteristics Fig. 8 - Forward Power Loss Characteristics Average Forwar d Current (A) Maximum Allowable Ambient Temperature (°C) 0 20 40 60 80 100 120 140 160 180 100 120 0 20 40 60 80 100 120 DC 180° 120° 90° 60° 30° RM S limit Conduction period 70HF(R) s erie s (100 V to 1200 V) T = 180 °C J R th S A = 0.3 K/W - Δ R 0.7 K W d Power Loss (W) Average Forwar d Current (A) Maximum Allowable Ambient Temperature (°C) Maximum Average Forwar d Power Loss (W) 0 25 50 75 100 125 150 0 10 20 30 40 50 60 70 80 RM S limit Conduction angle 180° 120° 90° 60° 30° 70HF(R) s erie s (1400 V to 1600 V) T = 150 °C J R th S A = 0.3 K/W - Δ R W 1.5 K/ W K/W Maximum Allowable Ambient Temperature (°C) 100 120 0 20 40 60 80 100 120 DC 180° 120° 90° 60° 30° Average Forward Current (A) RMS limit Maximum Average Forward Power Loss (W) Conduction period 70HF(R) series (1400 V to 1600 V) T = 150 °C J R thSA = 0.3 K/W - ΔR 1.5 K/W
© 2006 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com/ Page 5/5Rev.08C Fig. 9 - Maximum Non-Repetitive Surge Current Fig. 10 - Maximum Non-Repetitive Surge Current Fig. 11 - Forward Voltage Drop Characteristics Fig. 12 - Thermal Impedance Z thJC Characteristics Fig. 13 - Forward Voltage Drop Characteristics 300 400 500 600 700 800 900 1000 1100 1 10 100 Peak Half Sine Wave Forward Current (A) Number Of Equal Amplitude Half Cycle Current Pulses (N) 70HF(R) series At any rated load condition and with rated V RRM applied following surge. Initial T J = T J max. at 60 Hz 0.0083 s at 50 Hz 0.0100 s 200 300 400 500 600 700 800 900 1000 1100 1200 0.01 0.1 1 Peak Half Sine Wave Forward Current (A) Pulse Train Duration (s) Maximum non repetitive surge current 70HF(R) series vs. pulse train duration. Initial T J = T J max. No voltage reapplied Rated V RRM reapplied 100 1000 0 0.5 1 1.5 2 2.5 3 T J = 25 °C Instantaneous Forwar d Current (A) Instantaneous Forwar d Voltage (V) T J = T J max. 70HF(R) s erie s 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (s) Z thJC - Transient Thermal Impedance (K/W) Steady state value R thJC = 0.45 K/W (DC operation) 70HF(R) series Instantaneous Forwar d Voltage (V) Instantaneous Forwar d Current (A) 100 1000 0 0.5 1 1.5 2 2.5 3 3.5 4 T J = 25 °C T J = T J max. 70HF (R) s erie s (140 to 160) 70HF120/70HFR120