70CRU04 IRF | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 6

Technical content

Features

VR Cathode to Anode Voltage 400 V IF(AV) Continuous Forward Current T C = 116°C Per Diode 35 A IFSM Single Pulse Forward Current T C = 25°C Per Diode 300 PD Maximum Power Dissipation T C = 100°C Per Module 47 W TJ, TSTG Operating Junction and Storage Temperatures - 55 to 175 °C Parameters Max Units

  • Two Common-Cathode Diodes
  • Ultrafast Reverse Recovery
  • Ultrasoft Reverse Recovery Current Shape
  • Low Forward Voltage Drop
  • Low Leakage Current
  • Optimized for Power Conversion: Welding and Industrial SMPS Applications
  • Up to 175°C Operating Junction Temperature The 70CRU04 integrates two state-of-the-art International Rectifier’s Ultrafast recovery rectifiers in the common- cathode configuration. The planar structure of the diodes, and the platinum doping life-time control, provide a Ultrasoft recovery current shape, together with the best overall performance, ruggedness and reliability characteristics. These devices are thus intended for high frequency applications in which the switching energy is designed not to be predominant portion of the total energy, such as in the output rectification stage of Welding machines, SMPS, DC- DC converters. Their extremely optimized stored charge and low recovery current reduce both over-dissipation in the switching elements (and snubbers) and EMI/RFI. 70CRU04 TO-218 www.irf.com Base Common Cathode Anode Anode Common Cathode 21 2

2 www.irf.com VBR, Vr Breakdown Voltage, 400 - - V I R = 100µA Blocking Voltage VF Forward Voltage - 1.11 1.32 V I F = 35A - 0.98 1.14 V I F = 35A, TJ = 125°C - 0.92 1.05 V I F = 35A, TJ = 175°C IR Reverse Leakage Current - - 100 µA V R = VR Rated --2 m A T J = 150°C, VR = VR Rated CT Junction Capacitance - 70 - pF V R = 400V Electrical Characteristics per Diode @ TJ = 25°C (unless otherwise specified) Parameters Min Typ Max Units Test Conditions trr Reverse Recovery Time - 32 38 ns T J = 25°C trr Reverse Recovery Time - 72 - ns T J = 25°C - 130 - T J = 125°C IRRM Peak Recovery Current - 7.7 - A T J = 25°C - 16.5 - T J = 125°C Qrr Reverse Recovery Charge - 0.28 - µC T J = 25°C - 1.08 - T J = 125°C Dynamic Recovery Characteristics per Diode @ TJ = 25°C (unless otherwise specified) IF = 1A VR = 30V diF /dt = 200A/µs Parameters Min Typ Max Units Test Conditions Thermal - Mechanical Characteristics Parameters Min Typ Max Units RthJC Thermal Resistance, Junction to Case Per Diode - 0.8 1.6 K/W RthJC Thermal Resistance, Junction to Case Both Diodes - 0.4 0.8 RthCS (1) Thermal Resistance, Case to Heatsink - 0.2 - Wt Weight - 4 - g - 0.13 - (oz) T Mounting Torque 1.2 - 2.4 N * m 10 - 20 lbf.in !(1) Mounting Surface, Flat, Smooth and Greased IF = 35A VR = 200V diF /dt = 200A/µs

www.irf.com Fig. 1 - Typical Forward Voltage Drop Characteristics (Per Diode) Fig. 4 - Max. Thermal Impedance Z thJC Characteristics (Per Diode) Forward Voltage Drop - VFM (V) Instantaneous Forward Current - I F (A) Reverse Voltage - VR (V) Reverse Voltage - VR (V) Junction Capacitance - C T (pF) t1, Rectangular Pulse Duration (Seconds) Thermal Impedance Z thJC (°C/W) Fig. 3 - Typical Junction Capacitance Vs. Reverse Voltage Reverse Current - I R (µA) Fig. 2 - Typical Values Of Reverse Current Vs. Reverse Voltage 100 1000 1 10 100 1000 Tj = 25˚C 100 1000 0 0.5 1 1.5 2 2.5 3 Tj = 175˚C Tj = 125˚C Tj = 25˚C 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 Single Pulse (Thermal Resistance) PDM Notes: 1. Duty factor D = t1/ t2 2. Peak Tj = Pdm x ZthJC + Tc 0.001 0.01 0.1 100 1000 50 100 150 200 250 300 350 400 125˚C 25˚C 150˚C Tj = 175˚C

4 www.irf.com Fig. 5 - Max. Allowable Case Temperature Vs. Average Forward Current Fig. 8 - Typical Stored Charge vs. di F /dt Fig. 6 - Forward Power Loss Characteristics (3) Formula used: TC = TJ - (Pd + PdREV) x RthJC ; Pd = Forward Power Loss = IF(AV) x VFM @ (IF(AV) / D) (see Fig. 6); PdREV = Inverse Power Loss = VR1 x IR (1 - D); IR @ VR1 = rated VR Average Forward Current - I F(AV) (A) Fig. 7 - Typical Reverse Recovery vs. di F /dt Allowable Case Temperature (°C) Average Power Loss ( Watts ) trr ( ns ) Qrr ( nC ) di F /dt (A/µs )di F /dt (A/µs ) Average Forward Current - I F(AV) (A) 100 110 120 130 140 150 160 170 180 0 5 10 15 20 25 30 35 40 DC Square wave (D = 0.50) Rated Vr applied see note (3) 0 5 10 15 20 25 30 35 RMS Limit D = 0.01 D = 0.02 D = 0.05 D = 0.10 D = 0.20 D = 0.50 DC 100 110 120 130 140 150 100 1000 Tj = 125˚C Tj = 25˚C If = 35A Vrr = 200V 500 1000 1500 2000 2500 100 1000 Tj = 125˚C Tj = 25˚C If = 35A Vrr = 200V

www.irf.com Outline Table ASSEMBLY LOT CODE 70CRU04 1043 0136 INTERNATIONAL RECTIFIER LOGO DATE CODE (YYWW) WW = WEEK YY = YEAR IR PART NUMBER Marking Information Dimensions in inches (and milimetres)

6 www.irf.com Ordering Information Table Device Code 1 52 43 1 - Current Rating (70 = 70A) 2 - Common Cathode 3 - TO-218 4 - Ultrafast Recovery 5 - Voltage Rating (04 = 400V)

70 C R U 04

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7309 Visit us at www.irf.com for sales contact information. 12/01 Data and specifications subject to change without notice. This product has been designed and qualified for Industrial Level. Qualification Standards can be found on IR's Web site.