70CRU02 IRF | Alldatasheet
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Technical content
Features
VR Cathode to Anode Voltage 200 V IF(AV) Continuous Forward Current T C = 145°C Per Diode 35 A IFSM Single Pulse Forward Current T C = 25°C Per Diode 300 PD Maximum Power Dissipation T C = 100°C Per Module 67 W TJ, TSTG Operating Junction and Storage Temperatures - 55 to 175 °C Parameters Max Units
- Two Common-Cathode Diodes
- Ultrafast Reverse Recovery
- Ultrasoft Reverse Recovery Current Shape
- Low Forward Voltage Drop
- Low Leakage Current
- Optimized for Power Conversion: Welding and Industrial SMPS Applications
- Up to 175°C Operating Junction Temperature The 70CRU02 integrates two state-of-the-art International Rectifier’s Ultrafast recovery rectifiers in the common- cathode configuration. The planar structure of the diodes, and the platinum doping life-time control, provide a Ultrasoft recovery current shape, together with the best overall performance, ruggedness and reliability characteristics. These devices are thus intended for high frequency applications in which the switching energy is designed not to be predominant portion of the total energy, such as in the output rectification stage of Welding machines, SMPS, DC- DC converters. Their extremely optimized stored charge and low recovery current reduce both over-dissipation in the switching elements (and snubbers) and EMI/RFI. 70CRU02 TO-218 www.irf.com Base Common Cathode Anode Anode Common Cathode 21 2
Bulletin PD-20619 rev. B 02/02 2 www.irf.com VBR, Vr Breakdown Voltage, 200 - - V I R = 60µA Blocking Voltage VF Forward Voltage - 0.95 1.09 V I F = 35A - 0.9 1.0 V I F = 35A, TJ = 125°C - 0.85 0.9 V I F = 35A, TJ = 175°C IR Reverse Leakage Current - - 60 µA V R = VR Rated --2 m A T J = 150°C, VR = VR Rated CT Junction Capacitance - 50 - pF V R = 200V LS Series Inductance - 10 - nH Measured from A-lead to K-lead 5mm from package body Electrical Characteristics per Diode @ TJ = 25°C (unless otherwise specified) Parameters Min Typ Max Units Test Conditions trr Reverse Recovery Time - - 28 ns T J = 25°C -3 4 - T J = 125°C -2 6 - T J = 25°C -4 9 - T J = 125°C IRRM Peak Recovery Current - 3.7 - A T J = 25°C Qrr Reverse Recovery Charge - 48.7 - nC T J = 25°C - 202 - T J = 125°C Dynamic Recovery Characteristics per Diode @ TJ = 25°C (unless otherwise specified) IF = 1A VR = 30V diF /dt = 200A/µs Parameters Min Typ Max Units Test Conditions Thermal - Mechanical Characteristics Parameters Min Typ Max Units RthJC Thermal Resistance, Junction to Case Per Diode - 0.8 0.9 K/W RthJC Thermal Resistance, Junction to Case Both Leg - - 0.45 RthCS (1) Thermal Resistance, Case to Heatsink - 0.2 - Wt Weight - 5.5 - g - 0.2 - (oz) T Mounting Torque 1.2 - 2.4 N * m 10 - 20 lbf.in (1) Mounting Surface, Flat, Smooth and Greased IF = 35A VRR = 100V di/dt = 200A/µs
Bulletin PD-20619 rev. B 02/02 70CRU02 www.irf.com Fig. 1 - Typical Forward Voltage Drop Characteristics (Per Diode) Fig. 4 - Max. Thermal Impedance Z thJC Characteristics (Per Diode) Forward Voltage Drop - VFM (V) Instantaneous Forward Current - I F (A) Reverse Voltage - VR (V) Reverse Voltage - VR (V) Junction Capacitance - C T (pF) t1, Rectangular Pulse Duration (Seconds) Thermal Impedance Z thJC (°C/W) Fig. 3 - Typical Junction Capacitance Vs. Reverse Voltage Reverse Current - I R (µA) Fig. 2 - Typical Values Of Reverse Current Vs. Reverse Voltage 100 1000 T = 175˚C T = 125˚C T = 25˚C J J J 0.01 0.1 100 1000 0 50 100 150 200 25˚C T = 175˚CJ 125˚C 0.01 0.1 0.0001 0.001 0.01 0.1 1 Single Pulse (Thermal Resistance) PDM Notes: 1. Duty factor D = t1/ t2 2. Peak Tj = Pdm x ZthJC + Tc 100 1000 1 10 100 1000 T = 25˚CJ
Bulletin PD-20619 rev. B 02/02 4 www.irf.com Fig. 5 - Max. Allowable Case Temperature Vs. Average Forward Current Fig. 8 - Typical Stored Charge vs. di F /dt Fig. 6 - Forward Power Loss Characteristics (3) Formula used: TC = TJ - (Pd + PdREV) x RthJC ; Pd = Forward Power Loss = IF(AV) x VFM @ (IF(AV) / D) (see Fig. 6); PdREV = Inverse Power Loss = VR1 x IR (1 - D); IR @ VR1 = rated VR Average Forward Current - I F(AV) (A) Fig. 7 - Typical Reverse Recovery vs. di F /dt Allowable Case Temperature (°C) Average Power Loss ( W ) trr ( nC ) Qrr ( nC ) di F /dt (A/µs )di F /dt (A/µs ) 100 110 120 130 140 150 160 170 180 0 1 02 03 04 05 06 0 DC Square wave (D = 0.50) Rated Vr applied see note (3) 0 1 02 03 04 05 06 0 RMS Limit D = 0.20 D = 0.25 D = 0.33 D = 0.50 D = 0.75 DC 100 1000 If = 35A Vrr = 100V Tj = 125˚C Tj = 25˚C 100 200 300 400 500 600 100 1000 If = 35A Vrr = 100V Tj = 125˚C Tj = 25˚C Average Forward Current - I F(AV) (A)
Bulletin PD-20619 rev. B 02/02 70CRU02 www.irf.com Fig. 10 - Reverse Recovery Waveform and Definitions Fig. 9 - Reverse Recovery Parameter Test Circuit IRFP250 D.U.T. L = 70µH V = 200VR 0.01Ω G D S dif/dt ADJUST 4. Qrr - Area under curve defined by t rr and IRRM 5. di (rec) M / dt - Peak rate of change of current during t b portion of t rr 1. diF/dt - Rate of change of current through zero crossing 2. IRRM - Peak reverse recovery current 3. trr - Reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current Q rr = t rr x I RRM ta tb trr Qrr IF IRRM I RRM0.5 di(rec)M/dt
0.75 IRRM
Dimensions in inches (and milimetres)
Bulletin PD-20619 rev. B 02/02 6 www.irf.com Ordering Information Table Device Code 1 52 43 1 - Current Rating (70 = 70A) 2 - Common Cathode 3 - TO-218 4 - Ultrafast Recovery 5 - Voltage Rating (02 = 200V)
70 C R U 02
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7309 Visit us at www.irf.com for sales contact information. 02/02 Data and specifications subject to change without notice. This product has been designed and qualified for Industrial Level. Qualification Standards can be found on IR's Web site. 70CRU02 0J54 0047 INTERNATIONAL RECTIFIER LOGO IR PART NUMBER DATE CODE (YYWW) YY = YEAR WW = WEEK ASSEMBLY LOT CODE Marking Information