70C MICROSEMI | Alldatasheet

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Technical content

=P aI PoN Minimum Maximum Minimum Maximum Notes = & £ B 1.050 1.060 26.67 26.92 T K i D 5.850 6.144 149.10 156.06 Ss T E 6.850 7.375 173.99 187.33 c Fo 797 827 20.24 21.01 G .276 286 701 7.26 Y Vv o J 425 499 10.80 12.67 2 x kK .260 .280 6.60 7M Dio. w u 4 M500 600 12.70 15.24 N 140 150 3.56 3.81 tI T a —_t Po =e 1295 --- 7.49 H ot Ro --- -900 --- 22.86 Dio. 4 = S .225 275 6.48 6.99 A = U_.370 380 9.40 9.65 T0-208AD T0-209AC Vo 23 2235. 5.66 Dia, (10-83) (10-94) W065 .075 1.65 1.91 Dio. X 215 225 5.46 5.72 Note 1: 1/2-20 UNF-3A Y 290 315 7.37 8.00 Note 2: Full thread within 2 1/2 threads Z SI4 530 13.06 13.46 Note 3: For insulated cathode lead, AA 089 .099 2.26 2.51 add suffix "IL” to catalog number Microsemi Forward & Reverse Reverse Transient . Catalog Number Repetitive Blocking Blocking e High dv/dt-200 V/usec. Standard Lead Flag Lead ©1200 Amperes surge current 70C50B 7OCS50BF 500 600 Low forward on-state voltage 700608 70C60BF 600 700 ® Package conforming to either TO—209AC or 70C80B 70C80BF 800 900 TO—-208AD outline 70C100B 70C100BF 1000 1100 A 70¢1208 70¢120BF 1200 1300 © Economical for general purpose phase control

applications

To specify dv/dt other than 200V/usec., contact factory. PP

Electrical Characteristics

Max. RMS on-state current 'T(RMS) 110 Amps Tc = 78°C Max. average on-state cur. 'T(AV) 70 Amps Tc = 78°C Max. peak on-state voltage VM 1.4 Volts 'TM = 220 A(peak) Max. holding current 'y 200 mA Max. peak one cycle surge current 'TsM 1600 A Tc = 78°C, 60Hz Max. |2t capability for fusing V2 6000A2S t = 8.3 ms Thermal and Mechanical Characteristics Operating junction temp range Ln) -65°C to 125°C Storage temperature range TsTG -65°C to 150°C Maximum thermal resistance Reuc 0.28°C/W Junction to case Typical thermal resistance (greased) @cs 0.20°C/W Case to sink Max mounting torque 100-130 inch pounds Weight 7OC-B Approx. 3.6 ounces (102.0 grams) typical 70C-BF Approx. 3.24 ounces (91.8 grams) typical . COLORADO x 800 Hoyt Street Broomfield, CO. 80020 11-10-00 Rev. 2 icrosemi == FAX: (303) 466-3775 www.microsemi.com

Critical rate of rise of on-state current (note 1) di/dt 100A/usec. Ty = 125°C Typical delay time (note 1) td 3.0 usec. Typical circuit commuted turn-off time (note 2) tg 100 usec. TJ = 125°C Note 1: 'TM = 50A, VD = VORM. VGT = 12V open circuit, 20 ohm-0.1 usec. rise time Note 2: 'TM = 50A, di/dt = 5A/usec., VR during turn-off interval = SOV min., reapplied dv/dt = 20V/usec., linear to rated VORM, VGT = OV Triggering Max. gate voltage to trigger Vet 3.0V Ty = 25°C Max. nontriggering gate voltage Veo 0.25V Ty = 125°C Max. gate current to trigger ‘or 100mA Ty = 25°C Max. peak gate power Pom 15W Average gate power Po(av) 3.0W tp = 10 usec. Max. peak gate current 'oM 4.0A Max. peak gate voltage (forward) Vom 10V Max. peak gate voltage (reverse) Vom 5.0V Blocking Max. leakage current 'DRM, |RRM 10mA Ty =125°C &V DRM,YRRM Max. reverse leakage "DRM, 'RRM 100uA Ty =25°C & VDRMVRRM Critical rate of rise of off-state voltage dv/dt 200V/usec. Ty =125°C 11-10-00 Rev. 2

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fo LUT TT ETT TTT] eee rail 5 2 seo, eT Tl LUBE LLL): eer £ 10 SE 0 CoH | 2 6 10 14 18 22 26 30 01 oO on 1.0 10 100 Instantaneous On-State Voltage - Volts Time in Seconds Figure 2 Figure 5 Forward Current Derating Maximum Nonrepetitive Surge Current § 130 5 1600 som ttt tt ttt) o@ Xt Pi fT 2 E 5 120 ‘ 1500 Bo NAL E TTT To ATT TTT 2 110 DN | 1400 IN poe WN ee 8 100 SS 5 1300 NNN ee 2 90 NSAI ® 1200 IN g as) 5 5 oo} TTT INU bool Loleolhadleel FT| 3 el CE TNT 0 20 40 60 80 100 1 10 100 Average On-State Current - Amperes Number of Cycles 11-10-00 Rev. 2