6T06A-BW

6T06A-BW NELLSEMI | Alldatasheet

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www.nellsemi.com Page 1 of 6 SEMICONDUCTOR 6T Series RoHS RoHS

DESCRIPTION

T he 6T triac series is suitable for general purpose AC switching. They can be used as an ON/OFF function in applications such as static relays, heating regulation, induction motor starting circuits... or for phase control operation in light dimmers, motor speed controllers,... The snubberless and logic level versions are specially recommended for use on inductive loads, thanks to their high commutation performances. By using an internal ceramic pad, the 6T series provides voltage insulated tab (rated at 2500VRMS) complying with UL standards (File ref. :E320098) GA2 TRIACs, 6A Snubberless, and Standard Logic Level 1 2 3 1 2 3 TO-220AB (lnsulated) TO-251 (I-PAK) TO-252 (D-PAK) (6TxxF) (6TxxG) (6TxxAI) TO-220AB (non-Insulated) (6TxxA) MAIN FEATURES SYMBOL VALUE UNIT IT(RMS) V /VDRM RRM IGT(Q1) 6 A V mA5 to 50 600 to 1000 SYMBOL IT(RMS)RMS on-state current (full sine wave) 6 TO-251/TO-252/TO-220AB ITSM Non repetitive surge peak on-state current (full cycle, T initial = 25°C)j A I t22I t Value for fusing 21 2A s dI/dt Critical rate of rise of on-state current I = 2xl , t ≤100nsG GT r IGMPeak gate current 4 PG(AV)Average gate power dissipation 1 TstgStorage temperature range Operating junction temperature range - 40 to + 150 - 40 to + 125 ºC A/µs A A W UNITVALUE F =50 Hz F =60 Hz t = 20 ms t = 16.7 ms t = 10 msp F =100 Hz T =125ºCj T =125ºCj T =125ºCj T =20 µsp Tj ABSOLUTE MAXIMUM RATINGS PARAMETER TEST CONDITIONS TO-220AB insulated T = 110ºCc T = 105ºCc

www.nellsemi.com Page 2 of 6 C I - II - III IV MAX. 100 mA ALL ALL MAX. I - III - IV MAX. mA II MIN. MIN. V (2)TM MAX. Vt0(2) Threshold voltage MAX. Dynamic resistance MAX. IDRM IRRM V = VDRM RRM MAX. mA Note 1: Minimum l is guaranted at 5% of l max.GT GT Note 2: For both polarities of A2 referenced to A1. QUADRANT 6Txxxx V = 12 V, R = 30ΩD L V = V , R = 3.3KΩ, D DRM L T = 125°Cj I = 200 mAT I = 1.2 IG GT V = 67% V , gate open, T = 125°CD DRM j (dI/dt)c = 2.7 A/ms, T = 125°Cj 1.3 0.2 V V mA V/µs V/µs 80 100 200 400 5 10 I = 8.5 A, TM t = 380 µsP T = 125°Cj T = 25°Cj T = 125°Cj T = 125°Cj T = 25°Cj 1.55 0.85 V V µA mΩ STATIC CHARACTERISTICS UNITVALUE UNITTEST CONDITIONS TEST CONDITIONS SYMBOL SYMBOL 6Txxxx Unit I (1)GT I - II - III VGT I - II - III VGD I - II - III (2)IH MAX. I - III MAX. mA II (2)dV/dt MIN. (dI/dt)c (2) MIN. A/ms- IL MAX. MIN. V = 12 V, R = 30ΩD L V = V , R = 3.3KΩD DRM L T = 125°Cj I = 200 mAT I = 1.2 IG GT V = 67% V gate open ,T = 125°CD DRM j, (dV/dt)c = 0.1 V/µs (dV/dt)c = 10 V/µs Without snubber T = 125°Cj T = 125°Cj T = 125°Cj MAX. 2.7 1.2 10 50 1.3 0.2 15 55 25 70 30 80 40 1000 3.5 2.4 5.3- mA V V mA V/µs TEST CONDITIONS QUADRANTSYMBOL TW SW BW 400 3.5 CW SNUBBERLESS and Logic level (3 quadrants) Standard (4 quadrants) I (1)GT VGT VGD (2)IH (2)dV/d t IL (2)(dV/dt)c (2)Rd SEMICONDUCTOR 6T Series RoHS RoHS B (T ºC unless otherwise specified)J= 25 ELECTRICAL CHARACTERISTICS (T ºC unless otherwise specified)J= 25 ELECTRICAL CHARACTERISTICS

www.nellsemi.com Page 3 of 6 PRODUCT SELECTOR PART NUMBER VOLTAGE (xx) SENSITIVITY PACKAGE 600 V 50 mA 50 mA 25 mA 35 mA 10 mA 5 mA 1000 V 6TxxA-B/ 6TxxAl-B 6TxxA-BW/6TxxAl-BW 6TxxA-C/6TxxAl-C 6TxxA-CW/6TxxAl-CW 6TxxA-SW/6TxxAl-SW 6TxxA-TW/6TxxAI-TW TYPE TO-220AB TO-220AB TO-220AB TO-220AB TO-220AB TO-220AB Standard Snubberless Standard Snubberless Logic level Logic level V V V V V VV VV VV V SEMICONDUCTOR 6T Series RoHS RoHS 800 V V V V V V V THERMAL RESISTANCE Rth(j-c) Junction to case (AC) Rth(j-a) Junction to ambient 2.7 °C/W °C/W UNITVALUESYMBOL TO-220AB, TO-251, TO-252 TO-220AB Insulated TO-220AB, TO-251, TO-252 TO-220AB Insulated 1.8 50 mA 50 mA 35 mA 35 mA 10 mA 10 mA 6TxxF-BW 6TxxG-BW 6TxxF-CW 6TxxG-CW 6TxxF-SW 6TxxG-SW D-PAKSnubberless Snubberless Logic level Logic level V V V V V VV VV VV V V V V V V V 50 mA 50 mA 25 mA 25 mA 6TxxF-B 6TxxG-B 6TxxF-C 6TxxG-C StandardVV VV VV VV V V V V Snubberless Snubberless Standard Standard Standard I-PAK D-PAK I-PAK D-PAK I-PAK D-PAK I-PAK D-PAK I-PAK

ORDERING INFORMATION

ORDERING TYPE MARKING PACKAGE WEIGHT ,BASE Q TY DELIVERY MODE TO-220AB 2.0g 50 Tube 6TxxAI-yy 6TxxAI-yy 2.3g 50 Tube 6TxxF-yy 6TxxF-yy TO-251(I-PAK) 0.40g 80 6TxxG-yy 6TxxG-yy 0.38g 80 Tube Note: xx = voltage, yy = sensitivity TO-252(D-PAK) TO-220AB (insulated) Tube

www.nellsemi.com Page 4 of 6 0 1 2 3 4 5 6 P(W) I (A)T(RMS) 0 25 50 75 100 125 I (A)T(RMS) T (°C) C 1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2 1E-2 1E-1 1E+0 K=[Z /R ]th th Zth(j-a) Zth(j-c) 100 I (A)TM V (V)TM T max. V = 0.85V R = 60 m j Ωd T =j T max.j t (s) p SEMICONDUCTOR 6T Series RoHS RoHS Fig.1 Maximum power dissipation versus RMS on-state current (full cycle) Fig.2 RMS on-state current versus case temperature (full cycle) Fig.3 Relative variation of thermal impedance versus pulse duration. Fig.4 On-state characteristics (maximum values). ORDERING INFORMATION SCHEME Triac series Current Voltage 6 = 6A 06 = 600V 08 = 800V B = 50mA Standard BW = 50mA Snubberless C = 25mA Standard CW = 35mA Snubberless SW = 10mA Logic Level TW = 5mA Logic Level

6 T 06 A - BW

10 = 1000V A = TO-220AB (non-insulated) AI = TO-220AB ( insulated) AF= TO-220F(ISOWAT TO-220AB, insulated) F = TO-251 (I-PAK) G = TO-252 (D-PAK) I Sensitivity GT TO-220AB (Insulated) TO-251/TO-252 TO-220AB

www.nellsemi.com Page 5 of 6 -40 -20 0 20 40 60 80 100 120 140 0.0 0.5 1.0 1.5 2.0 2.5 I ,I ,I [T ] /GT H L j I ,I ,I [T =25 °C ]GT H L j IGT IH& IL 0.1 1.0 10.0 100.0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 (dV/dt)c (V/µs) (dI/dt)c [(dV/dt)c] / Specified (dI/dt)c TW BW/CW SW 0.1 1.0 10.0 100.0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 (dV/dt)c (V/µs) (dI/dt)c [(dV/dt)c] / Specified (dI/dt)c C B 0 25 50 75 100 125 (dI/dt)c [T ] / pecified]j (dI/dt)c [T sj T (°C) j T (°C) j SEMICONDUCTOR 6T Series RoHS RoHS Fig.7 Relative variation of gate trigger current,holding current and latching current versus junction temperature (typical values). Fig.8 Relative variation of critical rate of decrease of main current versus (dV/dt)c (typical values). Snubberless & Logic Level Types Fig.9 Relative variation of critical rate of decrease of main current versus (dV/dt)C (typical values) (Standard types). Fig.10 Relative variation of critical rate decrease of main current versus junction temperature . 1 10 100 1000 I (A)TSM Number of cycles t=20ms One cycle Non repetitive T initial=25°Cj Repetitive 0.01 0.10 1.00 10.00 100 1000 I (A), I t (A s)TSM T initial=25°Cj ITSM dI/dt limitation: 50A/µs 2I t T =105°Cc t (ms) p Fig.5 Surge peak on-state current versus number of cycles. Fig.6 Non-repetitive surge peak on-state current for a sinusoidal pulse with width tp < 10ms.2 and corresponding value of l t.

SEMICONDUCTOR 6T Series RoHS RoHS www.nellsemi.com Page 6 of 6 RoHS 6.4(0.52) 6.6(0.26) 5.2(0.204) 1.37(0.054) 9.4(0.37) 9(0.354) 16.3(0.641) 15.9(0.626) 4.6(0.181) 4.4(0.173) 0.85(0.033) 0.55(0.021) 1.9(0.075) 1.8(0.071) 2.4(0.095) 2.2(0.086) 0.62(0.024) 0.48(0.019) 0.62(0.024) 0.45(0.017) 6.2(0.244) 6(0.236) 1 2 1.14(0.045) 0.89(0.035) 0.76(0.030) 2.28(0.090) 4.57(0.180) 0.64(0.025) 6.4(0.251) 6.6(0.259) 5.4(0.212) 5.2(0.204) 1.5(0.059) 1.37(0.054) 9.35(0.368) 10.1(0.397) 2.4(0.095) 2.2(0.086) 0.62(0.024) 0.48(0.019) 6.2(0.244) 6(0.236) 0.62(0.024) 0.45(0.017) TO-251 (I-PAK) TO-252 (D-PAK) Case Style 2.87 (0.113) 2.62 (0.103) 9.40 (0.370) 9.14 (0.360) 10.54 (0.415) MAX. 16.13 (0.635) 15.87 (0.625) PIN 4.06 (0.160) 3.56 (0.140) 1.45 (0.057) 1.14 (0.045) 2.67 (0.105) 2.41 (0.095) 2.65 (0.104) 2.45 (0.096) 5.20 (0.205) 4.95 (0.195) 0.90 (0.035) 0.70 (0.028) 3.91 (0.154) 3.74 (0.148) 4.70 (0.185) 4.44 0.1754 ( ) 1.39 (0.055) 1.14 (0.045) 3.68 (0.145) 3.43 (0.135) 8.89 (0.350) 8.38 (0.330) 29.16 (1.148) 28.40 (1.118) 14.22 (0.560) 13.46 (0.530) 0.56 (0.022) 0.36 (0.014) 2.79 (0.110) 2.54 (0.100) 15.32 (0.603) 14.55 (0.573) TO-220AB