6S0965R

FS6S0965R FAIRCHILD | Alldatasheet

Document overview

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Technical content

Features

 Wide Operating Frequency Range Up to 150Khz  Lowest Cost SMPS Solution  Lowest External Components  Low Start-up Current (max:170uA)  Low Operating Current (max:15mA)  Internal High V oltage SenseFET  Built-in Auto-Restart Circuit  Over V oltage Protection (Auto Restart Mode)  Over Load Protection (Auto Restart Mode)  Over Current Protection With Latch Mode  Internal Thermal Protection With Latch Mode  Pulse By Pulse Over Current Limiting  Internal Burst Mode Controller for Stand-by Mode  Under V oltage Lockout With Hysteresis  External Sync. Terminal TO-3P-5L TO-220F-5L Internal Block Diagram S _ QB R Vref Internal Bias Ron Roff Rsense Vfb Offset PWM UVLO 3 1 Ifb Idelay R2.5R VREF VCC OSC Vpp=5.8/7.2V Vth=1V Uvlo Reset (VCC=9V) SQ R Vth=7.5V OLP OVP Vth=30V VCC OCL Filter (130nsec) SQ R TSD (Tj=160℃)Power-on Reset (VCC=6.5V) VREF VCC Vth=11/12V VFB Vth=1V Burst Mode Coltroller SYNC FS6S-SERIES FS6S0965R/FS6S0965RT/FS6S1265R/FS6S15658R Fairchild Power Switch(SPS)

FS6S-SERIES FS6S0965R/FS6S0965RT/FS6S1265R/FS6S15658R Absolute Maximum Ratings (Ta=25°C, unless otherwise specified) Characteristic Symbol Value Unit FS6S0965RT/FS6S0965R Drain to PKG Breakdown Voltage BV PKG FS6S0965RT 3500 V Maximum Drain Voltage V D,MAX 650 V Drain-Gate Voltage(RGS=1MΩ) VDGR 650 V Gate-Source(GND) Voltage V GS ±30 V Drain Current Pulsed(1) IDM 36 ADC Continuous Drain Current (Tc = 25°C) I D 9A D C Continuous Drain Current (Tc = 100°C) I D 7.2 ADC Single Pulsed Avalanch Current(Energy (2))I AS(EAS) 25(950) A(mJ) Maximum Supply Voltage V CC,MAX 35 V Input Voltage Range VFB -0.3 to VCC V VSS -0.3 to 10 V Total Power Dissipation PD (Watt H/S) FS6S0965RT 48 W FS6S0965R 170 Derating FS6S0965RT 0.385 W / °CFS6S0965R 1.33 Operating Junction Temperature. T J +160 °C Operating Ambient Temperature. T A -25 to +85 °C Storage Temperature Range. T STG -55 to +150 °C FS6S1265R Maximum Drain Voltage V D,MAX 650 V Drain-Gate Voltage(RGS=1MΩ) VDGR 650 V Gate-Source(GND) Voltage V GS ±30 V Drain Current Pulsed(1) IDM 48 ADC Continuous Drain Current (Tc = 25°C) I D 12 ADC Continuous Drain Current (Tc = 100°C) I D 8.4 ADC Single Pulsed Avalanch Current(Energy (2))I AS(EAS) 30(950) A(mJ) Maximum Supply Voltage V CC,MAX 35 V Input Voltage Range VFB -0.3 to VCC V VSS -0.3 to 10 V Total Power Dissipation PD (Watt H/S) 240 W Derating 1.92 W / °C Operating Junction Temperature. T J +160 °C Operating Ambient Temperature. T A -25 to +85 °C Storage Temperature Range. T STG -55 to +150 °C

FS6S-SERIES FS6S0965R/FS6S0965RT/FS6S1265R/FS6S15658R Absolute Maximum Ratings (Continued) (Ta=25°C, unless otherwise specified) Notes : 1. Repetitive rating : Pulse width limited by maximum junction temperature 2. L = 10mH, V DD =50V, RG = 27Ω , starting Tj = 25°C 3. L = 13uH, starting Tj = 25°C Characteristic Symbol Value Unit FS6S15658R Maximum Drain Voltage V D,MAX 650 V Drain-Gate Voltage(RGS=1MΩ) VDGR 650 V Gate-Source(GND) Voltage V GS ±30 V Drain Current Pulsed(1) IDM 60 ADC Continuous Drain Current (Tc = 25°C) I D 15 ADC Continuous Drain Current (Tc = 100°C) I D 12.0 ADC Single Pulsed Avalanch Current(Energy (2))I AS(EAS) 37(--) A(mJ) Maximum Supply Voltage V CC,MAX 35 V Input Voltage Range VFB -0.3 to VCC V VSS -0.3 to 10 V Total Power Dissipation PD (Watt H/S) 280 W Derating 2.22 W / °C Operating Junction Temperature. T J +160 °C Operating Ambient Temperature. T A -25 to +85 °C Storage Temperature Range. T STG -55 to +150 °C

FS6S-SERIES FS6S0965R/FS6S0965RT/FS6S1265R/FS6S15658R Electrical Characteristics (SFET Part) (Ta = 25°C unless otherwise specified) Parameter Symbol Conditions Min. Typ. Max. Unit FS6S0965RT/FS6S0965R Drain-Source Breakdown Voltage BV DSS VGS=0V, ID=50µA 650 - - V Zero Gate Voltage Drain Current I DSS VDS=Max., Rating, VGS=0V - - 200 µA VDS=0.8Max., Rating, VGS=0V, TC=125°C - - 300 µA Static Drain-Source On Resistance (1) RDS(on) VGS=10V, ID=4.5A - 1.1 1.2 Ω Forward transconductance(1) gfs V DS=50V, ID=4.5A - - - S Input capacitance Ciss VGS=0V, VDS=25V, f = 1MHz - 1300 - pFOutput capacitance Coss - 135 - Reverse transfer capacitance Crss - 25 - Turn on delay time td(on) V DD=0.5BVDSS, ID=9.0A (MOSFET switching time are essentially independent of operating temperature) -2 5- nS Rise time tr - 75 - Turn off delay time td(off) - 130 - Fall time tf - 70 - Total gate charge (gate-source+gate-drain) Qg V GS=10V, ID=9.0A, VDS=0.5BVDSS(MOSFET Switching time are Essentially independent of Operating temperature) -4 5- nC Gate-source charge Qgs - 8 - Gate-drain (Miller) charge Qgd - 22 - FS6S1265R Drain-Source Breakdown Voltage BV DSS VGS=0V, ID=50µA 650 - - V Zero Gate Voltage Drain Current I DSS VDS=Max., Rating, VGS=0V - - 200 µA VDS=0.8Max., Rating, VGS=0V, TC=125°C - - 300 µA Static Drain-Source On Resistance (1) RDS(on) VGS=10V, ID=4.5A - 0.7 0.9 Ω Forward transconductance(1) gfs V DS=50V, ID=4.5A - - - S Input capacitance Ciss VGS=0V, VDS=25V, f = 1MHz - 1820 - pFOutput capacitance Coss - 185 - Reverse transfer capacitance Crss - 32 - Turn on delay time td(on) V DD=0.5BVDSS, ID=12.0A (MOSFET switching time are essentially independent of operating temperature) -3 8- nS Rise time tr - 120 - Turn off delay time td(off) - 200 - Fall time tf - 100 - Total gate charge (gate-source+gate-drain) Qg V GS=10V, ID=12.0A, VDS=0.5BVDSS(MOSFET Switching time are Essentially independent of Operating temperature) -6 0- nCGate-source charge Qgs - 10 - Gate-drain (Miller) charge Qgd - 30 -

FS6S-SERIES FS6S0965R/FS6S0965RT/FS6S1265R/FS6S15658R Electrical Characteristics (SFET Part; Continued) (Ta = 25°C unless otherwise specified) Note: (1) Pulse Test : Pulse width ≤300uS, Duty Cycle ≤ 2 % (2) Parameter Symbol Conditions Min. Typ. Max. Unit FS6S15658R Drain-Source Breakdown Voltage BV DSS VGS=0V, ID=50µA 650 - - V Zero Gate Voltage Drain Current I DSS VDS=Max., Rating, VGS=0V - - 200 µA VDS=0.8Max., Rating, VGS=0V, TC=125°C - - 300 µA Static Drain-Source On Resistance (1) RDS(on) VGS=10V, ID=4.5A - 0.5 0.65 Ω Forward transconductance(1) gfs V DS=50V, ID=4.5A - - - S Input capacitance Ciss VGS=0V, VDS=25V, f = 1MHz - 2590 - pFOutput capacitance Coss - 270 - Reverse transfer capacitance Crss - 50 - Turn on delay time td(on) V DD=0.5BVDSS, ID=15.0A (MOSFET switching time are essentially independent of operating temperature) -5 0- nS Rise time tr - 155 - Turn off delay time td(off) - 270 - Fall time tf - 125 - Total gate charge (gate-source+gate-drain) Qg V GS=10V, ID=15.0A, VDS=0.5BVDSS(MOSFET Switching time are Essentially independent of Operating temperature) -9 0- nC Gate-source charge Qgs - 15 - Gate-drain (Miller) charge Qgd - 45 - S 1 R----=

FS6S-SERIES FS6S0965R/FS6S0965RT/FS6S1265R/FS6S15658R Electrical Characteristics (CONTROL Part) (VCC=16V , Tamb = 25°C unless otherwise specified) Note: 1. These parameters is the Current Flowing in the Control IC. 2. These parameters, although guaranteed, are not 100% tested in production 3. These parameters, although guaranteed, are tested in EDS(wafer test) process 4. These parameters are indicated Inductor Current. Parameter Symbol Conditions Min. Typ. Max. Unit UVLO SECTION Start Threshold Voltage V START VFB=GND 14 15 16 V Stop Threshold Voltage V STOP VFB=GND 8 9 10 V OSCILLATOR SECTION Initial Frequency F OSC -2 2 2 5 2 8 k H z Voltage Stability F STABLE 12V ≤ VCC ≤ 23V 0 1 3% Temperature Stability (Note2) ∆FOSC -25°C ≤ Τa≤ 85°C0 ±5 ±10 % Maximum Duty Cycle D MAX -9 2 9 5 9 8 % Minimum Duty Cycle D MIN -- - 0 % FEEDBACK SECTION Feedback Source Current I FB VFB=GND 0.7 0.9 1.1 mA Shutdown Feedback Voltage V SD VFB ≥ 6.9V 6.9 7.5 8.1 V Shutdown Delay Current I DELAY VFB=5V 1.6 2.0 2.4 µA SYNC. & SOFTSTART SECTION Softstart Voltage V SS VFB=2V 4.7 5.0 5.3 V Softstart Current I SS VSS=0V 0.8 1.0 1.2 mA Sync High Threshold Voltage(Note3) V SYNCH VCC=16V , VFB=5V - 7.2 - V Sync Low Threshold Voltage(Note3) V SYNCL VCC=16V , VFB=5V - 5.8 - V BURST MODE SECTION Burst Mode Low Threshold Voltage V BURL VFB=0V 10.4 11.0 11.6 V Burst Mode High Threshold Voltage V BURH VFB=0V 11.4 12.0 12.6 V Burst Mode Enable Feedback Voltage V BEN VCC=10.5V 0.7 1.0 1.3 V Burst Mode Peak Current Limit(Note4) I BURPK VCC=10.5V , VFB=0V 0.6 0.85 1.1 A Burst Mode Freqency F BUR VCC=10.5V , VFB=0V 40 50 60 kHz CURRENT LIMIT(SELF-PROTECTION)SECTION Peak Current Limit (Note4) I OVER FS6S0965R 5.28 6.0 6.72 AFS6S1265R 7.04 8.0 8.96 FS6S15658R 7.04 8.0 8.96 PROTECTION SECTION Over Voltage Protcetion V OVP VCC ≥ 27V 27 30 33 V Over Current Latch voltage(Note3) V OCL -0 . 9 1 . 0 1 . 1 V Thermal Shutdown Tempature(Note2) TSD - 140 160 - °C TOTAL DEVICE SECTION Start Up Current I START VFB=GND, VCC=14V - 0.1 0.17 mA Operating Supply Current(Note1) IOP VFB=GND, VCC=16V -1 0 1 5 m AIOP(MIN) VFB=GND, VCC=12V IOP(MAX) VFB=GND, VCC=30V

FS6S-SERIES FS6S0965R/FS6S0965RT/FS6S1265R/FS6S15658R Package Dimensions TO-3P-5L

FS6S-SERIES FS6S0965R/FS6S0965RT/FS6S1265R/FS6S15658R Package Dimensions (Continued) TO-3P-5L (Forming)

FS6S-SERIES FS6S0965R/FS6S0965RT/FS6S1265R/FS6S15658R Package Dimensions (Continued) TO-220F-5L

FS6S-SERIES FS6S0965R/FS6S0965RT/FS6S1265R/FS6S15658R Package Dimensions (Continued) TO-220F-5L (Forming)

FS6S-SERIES FS6S0965R/FS6S0965RT/FS6S1265R/FS6S15658R TOP Mark and Pinout Information Notes ; (1) F ; Fairchild Semiconductor (2) 6S0965R, 6S1265R, 6S15658R ; Device Marking Name (3) S: Plant Code (SPS: S) (4) XX: Patweek Based on Fairchild Semiconductor Work Month Calender (5) YY: Last Two Digit of Calender Year Device MARKING FS6S0965R 6S0965RFS6S0965RT FS6S1265R 6S1265R FS6S15658R 6S15658R SSSSXXXXXXXXYYYYYYYY MMMMAAAARRRRKKKKIIIINNNNGGGG FFFF Pin No. Symbol Description

1 Drain SenseFET Drain

2 GND Ground (Source)

3V CC Control Part Supply Input

4 F/B PWM Non Inverting Input

5 S/S Soft start & External Sync.

FS6S-SERIES FS6S0965R/FS6S0965RT/FS6S1265R/FS6S15658R

Ordering Information

TU : Non Forming Type YDTU : Forming Type Product Number Package Marking Code BVdss Rds(on) FS6S0965R-TU TO-3P-5L 6S0965R 650V 1.1 Ω FS6S0965R-YDTU TO-3P-5L(Forming) FS6S0965RT-TU TO-220F-5L 6S0965R 650V 1.1 ΩFS6S0965RT-YDTU TO-220F-5L(Forming) FS6S1265R-TU TO-3P-5L 6S1265R 650V 0.7 ΩFS6S1265R-YDTU TO-3P-5L(Forming) FS6S15658R-TU TO-3P-5L 6S15658R 650V 0.5 ΩFS6S15658R-YDTU TO-3P-5L(Forming)

FS6S-SERIES FS6S0965R/FS6S0965RT/FS6S1265R/FS6S15658R 2/5/01 0.0m 001  2001 Fairchild Semiconductor Corporation LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. www.fairchildsemi.com DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.