FDMC6890NZ FAIRCHILD | Alldatasheet

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Q1: N-Channel „ Max rDS(on) = 68mΩ at VGS = 4.5V, ID = 4A „ Max rDS(on) = 100mΩ at VGS = 2.5V, ID = 3A Q2: N-Channel „ Max rDS(on) = 100mΩ at VGS = 4.5V, ID = 4A „ Max rDS(on) = 150mΩ at VGS = 2.5V, ID = 2A „ Low gate Charge „ RoHS Compliant General Description FDMC6890NZ is a compact single package solution for DC to DC converters with excellent thermal and switching characteristics. Inside the Power 33 package features two N-channel MOSFETs with low on-state resistance and low gate charge to maximize the power conversion and switching efficiency. The Q1 switch also integrates gate protection from unclamped voltage input. Application „ DC - DC Conversion MOSFET Maximum Ratings TA = 25°C unless otherwise noted Thermal Characteristics Package Marking and Ordering Information Symbol Parameter Q1 Q2 Units VDS Drain to Source Voltage 20 20 V VGS Gate to Source Voltage ±12 ±12 V ID -Continuous 4 A -Pulsed 10 PD Power Dissipation (Steady State) Q1 (Note 1a) 1.92 WPower Dissipation (Steady State) Q2 1.78 TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 °C RθJA Thermal Resistance, Junction to Ambient Q1 (Note 1a) 65 °C/W RθJA Thermal Resistance, Junction to Ambient Q2 70 Device Marking Device Package Reel Size Tape Width Quantity 6890N FDMC6890NZ Power 33 7inch 8mm 3000 units G1 D1/S2 G2 D1/S2 D2 S1 D1/S2 D2 G1 G2 Up Bottom D1/S2 D1 D2 5 G2D2 D1/S2 S1 G1 D1/S2 Power 33

FDMC6890NZ Dual N-Channel PowerTrench® MOSFET FDMC6890NZ Rev.C www.fairchildsemi.com2 Electrical Characteristics TJ = 25°C unless otherwise noted Symbol Parameter Test Conditions Type Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V Q1 20 V ∆BVDSS ∆TJ Breakdown Voltage Temperature Coefficient ID = 250µA, referenced to 25°C Q1 Q2 13 12 mV/°C IDSS Zero Gate Voltage Drain Current VDS = 16V, VGS = 0V Q1 1 µA IGSS Gate to Source Leakage Current VGS = ±12V, VDS= 0V Q1 Q2 ±10 ±100 µA nA On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250µA Q1 0.6 0.6 0.9 1.0 2 V ∆VGS(th) ∆TJ Gate to Source Threshold Voltage Temperature Coefficient ID = 250µA, referenced to 25°C Q1 -3 mV/°C rDS(on) Drain to Source On Resistance VGS = 4.5V, ID = 4A VGS = 2.5V, ID = 3A Q1 58 100 mΩVGS = 4.5V, ID = 4A VGS = 2.5V, ID = 2A Q2 67 102 100 150 gFS Forward Transconductance VDS = V, ID =4A Q1 7 S Dynamic Characteristics Ciss Input Capacitance VDS = 10V, VGS = 0V, f= 1MHZ Q2 205 190 270 250 pF Coss Output Capacitance Q1 80 pF Crss Reverse Transfer Capacitance Q1 55 pF Rg Gate Resistance f = 1MHz Q1 3.3 2.8 Ω Switching Characteristics td(on) Turn-On Delay Time VDD = 10V, ID = 4A, RGEN = 6Ω Q2 4 10 ns tr Rise Time Q1 Q2 13 21 ns td(off) Turn-Off Delay Time Q1 Q2 10 14 ns tf Fall Time Q1 Q2 6 12 ns Qg(TOT) Total Gate Charge at 4.5V VGS = 0V to 4.5V VDD = 10 V ID = 4A 2.4 1.8 3.4 2.6 nC Qg(2) Total Gate Charge at 2V Q1 1.4 0.6 1.9 0.8 nC Qgs Gate to Source Gate Charge Q1 Q2 0.4 0.5 nC Qgd Gate to Drain “Miller” Charge Q1 Q2 0.9 0.8 nC

FDMC6890NZ Dual N-Channel PowerTrench® MOSFET FDMC6890NZ Rev.C www.fairchildsemi.com3 Electrical Characteristics TJ = 25°C unless otherwise noted Drain-Source Diode Characteristics Symbol Parameter Test Conditions Type Min Typ Max Units VSD Source to Drain Diode Forward Voltage VGS = 0V, IS = 4A Q1 Q2 0.94 0.92 1.25 1.25 V trr Reverse Recovery Time IF = 4A, di/dt = 100A/s 26 ns Qrr Reverse Recovery Charge Q1 Q2 9 15 nC Notes: 1: RθJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by the user's board design. 2: Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%. a. 65°C/W when mounted on a 1 in2 pad of 2 oz copper b. 150°C/W when mounted on a minimum pad of 2 oz copper

Gate Charge Characteristics Figure 8. Figure 11. Single Pulse Maximum Power Dissipation

150 TA–

Figure 12. Transient Thermal Response Curve

Figure 19. Gate Charge Characteristics Figure 20. Capacitance vs Drain Figure 21. Unclamped Inductive Figure 23. Single Pulse Maximum Power Dissipation

Figure 24. Transient Thermal Response Curve

1 DUTY CYCLE-DESCENDING ORDER

FDMC6890NZ Dual N-Channel PowerTrench® MOSFET FDMC6890NZ Rev.C www.fairchildsemi.com10

FDMC6890NZ Rev. C www.fairchildsemi.com11 FDMC6890NZ Dual N-Channel PowerTrench® MOSFET Rev. I20 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HERE IN; NEITHER DOES IT CONVEY ANY LICE NSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND TH E TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms ACEx™ ActiveArray™ Bottomless™ Build it Now™ CoolFET™ CROSSVOLT™ DOME™ EcoSPARK™ E 2CMOS™ EnSigna™ FACT™ FAST FASTr™ FPS™ FRFET™ FACT Quiet Series™ GlobalOptoisolator™ GTO™ HiSeC™ I 2C™ i-Lo™ ImpliedDisconnect™ IntelliMAX™ ISOPLANAR™ LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ OPTOLOGIC OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerEdge™ PowerSaver™ PowerTrench QFET® QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ µSerDes™ ScalarPump™ SILENT SWITCHER SMART START™ SPM™ Stealth™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TCM™ TinyBoost™ TinyBuck™ TinyPWM™ TinyPower™ TinyLogic TINYOPTO™ TruTranslation™ UHC™ UniFET™ UltraFET VCX™ Wire™ Across the board. Around the world.™ The Power Franchise® Programmable Active Droop™ Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datas heet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datas heet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.