6888 FUMAN | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 5

Technical content

Features

68V,88A  RDS(ON)=7.0mΩ(Typ.)@VGS =10V RDS(ON)=9.0mΩ(Typ.)@VGS=4.5V  HighDensityCellDesign forUltra LowRDS(ON)  FullyCharacterizedAvalanche Voltageand Current  Good StabilityandUniformitywith HighEAS  ExcellentPackage forGoodHeatDissipation Application  LoadSwitch  Hard Switchedand High FrequencyCircuits  Uninterruptible PowerSupply Package Markingandpin assignment TO-263topview Schematic diagram Device Marking Device Device Package Reel Size Tape width Quantity 6888 6888 TO-263 - - - 6888

深圳市富满电子集团股份有限公司 SHEN ZHEN FINE MADE ELECTRONICS GROUPCO., LTD. 6888 (文件编号：S&CIC1704) N-channel MOSFET www.superchip.cn 第 2 页 共 5 页 Version1.0 May2019 Electrical Characteristics(TC=25℃ unlessotherwisespecified) Symbol Parameter Test Condition Min. Typ. Max. Units Off Characteristic V(BR)DSS Drain-SourceBreakdown Voltage VGS=0V,ID=250μA 68 - - V IDSS ZeroGateVoltageDrain Current VDS=66V,VGS =0V, - - 1.0 μA IGSS GatetoBody LeakageCurrent VDS =0V,VGS =±20V - - ±100 nA On Characteristics VGS(th) GateThresholdVoltage VDS=VGS,ID=250μA 1.2 1.7 2.5 V RDS(on) StaticDrain-Sourceon-Resistance note2 VGS =10V,ID =40A - 7.0 8.2 mΩVGS =4.5V,ID =30A - 9.0 11 gFS ForwardTransconductance VDS =5V,ID =20A 10 - - S Dynamic Characteristics Ciss InputCapacitance VDS =30V, VGS =0V,f=1.0MHz - 1980 - pF Coss OutputCapacitance - 470 - pF Crss ReverseTransferCapacitance - 14 - pF Qg TotalGate Charge VDS =30V,ID =20A, VGS =10V - 31 - nC Qgs Gate-SourceCharge - 6 - nC Qgd Gate-Drain(“Miller”)Charge - 5 - nC Switching Characteristics td(on) Turn-onDelay Time VDD=30V,ID =20A, RL=1Ω,RGEN=3Ω, VGS =10V - 10 - ns tr Turn-onRiseTime - 5 - ns td(off) Turn-offDelay Time - 30 - ns tf Turn-offFall Time - 8 - ns Drain-Source Diode Characteristics and Maximum Ratings IS MaximumContinuous Drain toSourceDiodeForward Current - - 80 A ISM MaximumPulsed Drainto SourceDiode ForwardCurrent - - 320 A VSD DraintoSource DiodeForwardVoltage VGS =0V,IS=20A - 0.8 1.2 V trr BodyDiode ReverseRecoveryTime TJ=25℃, IF=20A,dI/dt=100A/μs - 17 - ns Qrr BodyDiode ReverseRecoveryCharge - 58 - nC Notes:1.RepetitiveRating:PulseWidthLimitedby MaximumJunctionTemperature 2.PulseTest:PulseWidth≤300μs,DutyCycle≤0.5%

深圳市富满电子集团股份有限公司 SHEN ZHEN FINE MADE ELECTRONICS GROUPCO., LTD. 6888 (文件编号：S&CIC1704) N-channel MOSFET www.superchip.cn 第 4 页 共 5 页 Version1.0 May2019 Figure 4:Peak Diode Recovery dv/dt Test Circuit & Waveforms (For N-channel)

深圳市富满电子集团股份有限公司 SHEN ZHEN FINE MADE ELECTRONICS GROUPCO., LTD. 6888 (文件编号：S&CIC1704) N-channel MOSFET www.superchip.cn 第 5 页 共 5 页 Version1.0 May2019