6690AS

FDS6690AS_08 FAIRCHILD | Alldatasheet

Document overview

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Technical content

Features

• 10 A, 30 V. R DS(ON) max= 12 mΩ @ VGS = 10 V RDS(ON) max= 15 mΩ @ VGS = 4.5 V
• Includes SyncFET Schottky diode
• Low gate charge (16nC typical)
• High performance trench technology for extremely low RDS(ON)
• High power and current handling capability S D SSSO-8 DD D G Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol Parameter Ratings Units VDSS Drain-Source Voltage 30 V VGSS Gate-Source Voltage ±20 V ID Drain Current – Continuous (Note 1a) 10 A – Pulsed 50 Power Dissipation for Single Operation (Note 1a) 2.5 (Note 1b) 1.2 PD (Note 1c) 1 W TJ, TSTG Operating and Storage Junction Temperature Range –55 to +150 °C Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 50 °C/W RθJC Thermal Resistance, Junction-to-Case (Note 1) 25 °C/W Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS6690AS FDS6690AS 13’’ 12mm 2500 units tm May 2008 FDS6690AS 30V N-Channel PowerTrench® SyncFET™

FDS6690AS Rev A2 (X) Electrical Characteristics TA = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain–Source Breakdown Voltage V GS = 0 V, ID = 1 mA 30 V ∆BVDSS ∆TJ Breakdown Voltage Temperature Coefficient ID = 10 mA, Referenced to 25°C 30 mV/°C IDSS Zero Gate Voltage Drain Current V DS = 24 V, V GS = 0 V 500 µA IGSS Gate–Body Leakage VGS = ±20 V, V DS = 0 V ±100 nA On Characteristics (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = 1 mA 1 1.6 3 V ∆VGS(th) ∆TJ Gate Threshold Voltage Temperature Coefficient ID = 10 mA, Referenced to 25°C –4 mV/°C RDS(on) Static Drain–Source On–Resistance VGS = 10 V, I D = 10 A VGS = 4.5 V, I D = 8.5 A VGS=10 V, ID =10A, TJ=125°C mΩ ID(on) On–State Drain Current VGS = 10 V, V DS = 5 V 50 A gFS Forward Transconductance V DS = 15 V, I D = 10 A 45 S Dynamic Characteristics Ciss Input Capacitance 910 pF Coss Output Capacitance 270 pF Crss Reverse Transfer Capacitance VDS = 15 V, V GS = 0 V, f = 1.0 MHz 100 pF RG Gate Resistance VGS = 15 mV, f = 1.0 MHz 2.0 Ω Switching Characteristics (Note 2) td(on) Turn–On Delay Time 8 16 ns tr Turn–On Rise Time 5 10 ns td(off) Turn–Off Delay Time 25 40 ns tf Turn–Off Fall Time VDS = 15 V, I D = 1 A, VGS = 10 V, R GEN = 6 Ω 6 12 ns td(on) Turn–On Delay Time 11 20 ns tr Turn–On Rise Time 11 20 ns td(off) Turn–Off Delay Time 15 27 ns tf Turn–Off Fall Time V DS = 15 V, I D = 1 A, VGS = 4.5 V, R GEN = 6 Ω 8 16 ns Qg(TOT) Total Gate Charge at Vgs=10V 16 23 nC Qg Total Gate Charge at Vgs=5V 9 13 nC Qgs Gate–Source Charge 2.3 nC Qgd Gate–Drain Charge VDD = 15 V, ID = 10 A 3.0 nC FDS6690AS 30V N-Channel PowerTrench® SyncFET™

FDS6690AS Rev A2 (X) Electrical Characteristics TA = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Drain–Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain–Source Diode Forward Current 3.5 A VSD Drain–Source Diode Forward Voltage VGS = 0 V, I S = 3.5 A (Note 2) 0.6 0.7 V Trr Diode Reverse Recovery Time I F = 10A, 16 nS Qrr Diode Reverse Recovery Charge d iF/dt = 300 A/µs (Note 3) 9 nC Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) 50°/W when mounted on a 1 in2 pad of 2 oz copper b) 105°/W when mounted on a .04 in2 pad of 2 oz copper c) 125°/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% 3. See “SyncFET Schottky body diode characteristics” below. FDS6690AS 30V N-Channel PowerTrench® SyncFET™

Rev. I34 TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fair child Semiconductor and/or its gl obal subsidianries, and is not intended to be an exhaustive list of all such trademarks. * EZSWITCH™ and FlashWriter ® are trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CH ANGES WITHOUT FURTHER NO TICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonabl y expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms ACEx® Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ CTL™ Current Transfer Logic™ EcoSPARK EfficentMax™ EZSWITCH™ * Fairchild® Fairchild Semiconductor® FACT Quiet Series™ FACT® FAST® FastvCore™ FlashWriter ® * FPS™ F-PFS™ FRFET Global Power ResourceSM Green FPS™ Green FPS™ e-Series™ GTO™ IntelliMAX™ ISOPLANAR™ MegaBuck™ MICROCOUPLER™ MicroFET™ MicroPak™ MillerDrive™ MotionMax™ Motion-SPM™ OPTOLOGIC OPTOPLANAR® PDP-SPM™ Power-SPM™ PowerTrench Programmable Active Droop™ QFET® QS™ Quiet Series™ RapidConfigure™ Saving our world 1mW at a time™ SmartMax™ SMART START™ SPM STEALTH™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SuperMOS™ The Power Franchise TinyBoost™ TinyBuck™ TinyLogic® TINYOPTO™ TinyPower™ TinyPWM™ TinyWire™ µSerDes™ UHC Ultra FRFET™ UniFET™ VCX™ VisualMax™ tm tm Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data; supplementary data will be pub- lished at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production This datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. FDS6690AS Rev.A2(X)