FDR6674A FAIRCHILD | Alldatasheet

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Technical content

Features

  • 11.5 A, 30 V. R DS(ON) = 9.5 mΩ @ VGS = 4.5 V R DS(ON) = 8.5 mΩ @ VGS = 10 V
  • High performance trench technology for extremely low RDS(ON)
  • High power and current handling capability in a smaller footprint than SO8 D S D D S D G SuperSOT -8 TM D Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol Parameter Ratings Units VDSS Drain-Source Voltage 30 V VGSS Gate-Source Voltage ±12 V ID Drain Current – Continuous (Note 1a) 11.5 A – Pulsed 50 Power Dissipation for Single Operation (Note 1a) 1.8 (Note 1b) 1.0 PD (Note 1c) 0.9 W TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 °C Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 70 °C/W RθJC Thermal Resistance, Junction-to-Case (Note 1) 20 °C/W Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity .6674A FDR6674A 13’’ 12mm 2500 units FDR6674A

FDR6674A Rev D(W) Electrical Characteristics TA = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ID = 250 µA 30 V ∆BVDSS ∆TJ Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C 23 mV/°C IDSS Zero Gate Voltage Drain Current V DS = 24 V, V GS = 0 V 1 µA IGSSF Gate–Body Leakage, Forward V GS = 12 V, VDS = 0 V 100 nA IGSSR Gate–Body Leakage, Reverse V GS = –12 V , VDS = 0 V –100 nA On Characteristics (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA 0.8 1.2 2 V ∆VGS(th) ∆TJ Gate Threshold Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C -4 mV/°C RDS(on) Static Drain–Source On–Resistance VGS = 4.5 V, ID = 10.5 A VGS = 4.5 V, ID = 10.5 A, TJ 125°C VGS = 10 V, ID = 11.5 A 8.2 11.5 6.8 9.5 mΩ ID(on) On–State Drain Current V GS = 4.5 V, VDS = 5 V 50 A gFS Forward Transconductance V DS = 10 V, I D = 11.5 A 75 S Dynamic Characteristics Ciss Input Capacitance 5070 pF Coss Output Capacitance 550 pF Crss Reverse Transfer Capacitance VDS = 15 V, V GS = 0 V, f = 1.0 MHz 230 pF Switching Characteristics (Note 2) td(on) Turn–On Delay Time 17 25 ns tr Turn–On Rise Time 18 25 ns td(off) Turn–Off Delay Time 69 100 ns tf Turn–Off Fall Time VDD = 10 V, I D = 1 A, VGS = 4.5 V, RGEN = 6 Ω 29 42 ns Qg Total Gate Charge 33 46 nC Qgs Gate–Source Charge 7.5 nC Qgd Gate–Drain Charge VDS = 15 V, ID = 11.5 A, VGS = 4.5V 6.8 nC Drain–Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain–Source Diode Forward Current 2.1 A VSD Drain–Source Diode Forward Voltage VGS = 0 V, I S = 2.1 A (Note 2) 0.7 1.2 V Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the so lder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) 70°/W when mounted on a 1in2 pad of 2 oz copper b) 125°/W when mounted on a .04 in2 pad of 2 oz copper c) 135°/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0% FDR6674A

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Preliminary No Identification Needed Obsolete This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Formative or In Design First Production Full Production Not In Production DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY , FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. PACMAN™ POP™ PowerTrench QFET™ QS™ QT Optoelectronics™ Quiet Series™ SILENT SWITCHER SMART START™ Star* Power™ Stealth™ FAST FASTr™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ LittleFET™ MicroFET™ MICROWIRE™ OPTOLOGIC™ OPTOPLANAR™ Rev. H1 ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DenseTrench™ DOME™ EcoSPARK™ E 2CMOSTM EnSignaTM FACT™ FACT Quiet Series™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ UHC™ UltraFET VCX™