WTM649A WEITRON | Alldatasheet
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ABSOLUTE MAXIMUM RATINGS (TA=25˚C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Symbol Limits UnitRating SymbolParameter Min Typ Max Unit ELECTRICAL CHARACTERISTICS(TA=25˚Cunless otherwise noted) Collector-Emitter Breakdown Voltage IC=-10mA, IB=0 Collector-Base Breakdown Voltage IC=-1mA, IE=0 Emitter-Base Breakdown Voltage IE=-1mA, IC=0 Collector Cutoff Current VCB=-160V, IE=0 ICBO WTM649A Tj PD WEITRON http://www.weitron.com.tw PNP Epitaxial Planar Transistors -180 -160 -1.5 1Collector Power Dissipation IC(DC) IC(Pulse) W Storage Temperature Range Tstg 150 -55 to +150 31. BASE 2. COLLECTOR 3. EMITTER SOT-89 Collector Current VCBO VCEO VEBO A V V V BVEBO BVCEO BVCBO -180 -160 - - -10 V V V µA Junction Temperature Device Marking WTM649A=649A 1/4 01-Aug-05 Lead(Pb)-Free Pb
http://www.weitron.com.tw CLASSIFICATION OF hFE1 Rank B C hFE1 60-120 100-200 WTM649A Transition Frequency VCE=-5V, IC=-150mA, f=100MHz Output Capacitance 1. Pulse Test: Pulse Width ≤ 380µs, Duty Cycle ≤ 2% VCB=-10V, f=1MHz - 140 - MHz DYNAMIC CHARACTERISTICS fT - 27 - pFCob ELECTRICAL CHARACTERISTICS (TA=25˚C Unless otherwise noted) Characteristic Symbol Min Typ Max Unit ON CHARACTERISTICS(1) DC Current Gain VCE=-5V, IC=-150mA VCE=-5V, IC=-500mA Collector-Emitter Saturation Voltage IC=-600mA, IB=-50mA Base-Emitter Saturation Voltage VCE=-5V, IC=-150mA hFE1 hFE2 200 - - VCE(sat) VBE(on) - - -1 V - - -1.5 V 01-Aug-05
http://www.weitron.com.tw ELECTRICAL CHARACTERISTIC CURVES WTM649A 1.2 Fig.3 Satueation Voltage & Collector Current V egatlov noitarutas rettime ot esaB )tas(EB )V( 1.0 lC=101B TC=-25˚C 0.8 0.6 0.4 0.2 1 3 10 30 100 300 1000 Collector current IC (mA) 25˚C75˚C VCE = -5V350 Fig.1 Current Gain & Collector Current h oitaR rotsisnarT tnerruC CD EF 300 250 200 150 100 -1 -10 -100 -1000 Collector current IC (mA) Ta=75˚C -25˚C 25˚C -1.2 Fig.2 Satueation Voltage & Collector Current egatlov noitarutas retime ot rotcelloC -1.0 -0.8 lC=101B Ta=-75˚C -0.6 -0.4 -0.2 -1 -10 -100 -1000 Collector current IC (mA) V )tas(EC )V( 25˚C -25˚C Fig.4 Gain Bandwidth Product & Collector Current VCE=5V Ta=-25˚C 120 160 200 240 10 30 100 300 1000 Collector current IC (mA) f tcudorp htdiwdnab niaG T )zHM( Fig.5 Capacitance & Collector to Base Voltage C ecnaticapac tuptuo rotcelloC bo )Fp( 100 200 -1 -3 -10 -30 -100 Collector to base voltage VCB (V) f = 1 MHz IE = 0 Fig.6 Safe Operating Area I tnerruC rotcelloC C )A( -1.0 -0.3 -0.1 -0.03 -0.01 Collector to emitter voltage VCE (V) ICmax DC Operation (TC=25˚C) (-13.3V, -1.5A) (-40V, -0.5A) (-160V, -0.02A) 3/4 01-Aug-05
http://www.weitron.com.tw A B C D E G H J K L 1.400 0.320 0.360 0.350 4.400 1.400 2.300 3.940 2.900 Max SOT-89 SOT-89 Outline Dimensions unit:mm B A H E J K G D C L 1.600 0.520 0.560 0.440 4.600 1.800 2.600 4.250 3.100 1.500TYP WTM649A MinDim 01-Aug-05