6420EVM

EDGE6420 SEMTECH | Alldatasheet

Document overview

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Technical content

HIGH-PERFORMANCE PRODUCTS – ATE 1 www .semtech.com Edge6420 Per-Pin Electronics Companion DAC Description Features Functional Block Diagram

Applications

Revision 4 / April 29, 2002 The Edge6420 is a monolithic device which has 64 integrated DACs that are designed specifically for all per channel wide-voltage and current levels needed for pin electronics inside automatic test equipment. The chip can also be used for other applications requiring multiple integrated voltage or current DAC outputs. Voltage DACs

Wide voltage (17V range)
Adjustable full scale range
Adjustable minimum output
13 bits resolution Current DACs
~3.6 mA full scale range
Adjustable full scale range
6/13 bits resolution The DACs are programmed using a serial interface. The inclusion of 64 total DACs into 1 package offers an extremely high density, flexible solution normally implemented using multiple components.

64 Total DACs/Package Including:

Wide Voltage Output Range (17V Range); Useful for Supervoltage
44 Voltage DACs / Package
20 Current DACs / Package
Adjustable Full Scale Range
Adjustable Output Voltage Offset
Small 13x13mm BGA Package
All DACs are Guaranteed Monotonic
Test Equipment
Applications requiring multiple programmable voltage and currents CE CK UPDATE RESET* DAC 0 DAC 63 VOUT_CH0_[0:10] IOUT_CH0_[0:4] Channel 0 SDI VOUT_CH1_[0:10] IOUT_CH1[0:4] Channel 1 VOUT_CH2_[0:10] IOUT_CH2_[0:4] Channel 2 VOUT_CH3_[0:10] IOUT_CH3_[0:4] Channel 3 SDO CK_OUT

2 2000 Semtech Corp. www .semtech.com HIGH-PERFORMANCE PRODUCTS – ATE Edge6420 PIN Description emaNllaBn oitacoLllaBn oitpircseD ]4:0[_]3:0[HC_TUOV, 2F,1F,3G,51F,31F,41F,51G,31G ,51K,31J,1K,3K,2K,1J,3J,1E,3F 51L,31K,41K .3ot0slennahcrofsegalovtuptuoCADApuorG ]6:5[_]3:0[HC_TUOV3 1L,41L,1L,2L,3E,2E,51E,41E .3ot0slennahcrofsegatlovtuptuoCADBpuorG ]8:7[_]3:0[HC_TUOV4 1M,51M,2M,3L,2D,1D,41D,31E .3ot0slennahcrofsegqatlovtuptuoCADCpuorG ]01:9[_]3:0[HC_TUOV5 1N,31M,3M,1M,1C,3D,31D,51D .3ot0slennahcrofsegatlovtuptuoCADDpuorG ]1:0[_]3:0[HC_TUOI4 1N,51P,2N,1N,2C,1B,41C,51C .3ot0slennahcrofsegatlovtuptuoCADEpuorG ]4:2[_]3:0[HC_TUOI, 1H,2H,2G,1G,3H,41G,51H,41H 41J,51J,31H,2J .3ot0slennahcrofsegatlovtuptuoCADFpuorG RETSAM_R5 P tnerrucecnereferehtenifedotdesurotsiserlanretxeretsaM .sCADegatlovrofkcolbgnittestesffodnaniagehtrof )F,E,D,C,B,A(_NIAG_R9 N,9R,01P,01N,01R,11P egatlovhtobrofniagtnerructesotrotsiserlanretxerofsniP .sCADtuptuotnerrucdna )D,C,B,A(_TESFFO_R5 R,6N,6P,6R puorGrofegatlovtesffoehttesotrotsiserlanretxerofsniP .s'CADtuptuoegatlovDdna,C,B,A IDS0 1B. tupniatadlaireS KC1 1A. retsigertfihsatadtupniehtrofkcolC ETADPU6 C. sCADehtotatadretsigertfihsehtrefsnartotebortS EC0 1A. elbanepihC *TESER5 C tluafednwonkaotsCADehtsteS.teserpihcwolevitcA .etats ODS5 B. tuOataDlaireS TUO_KC6 A. sesoprupniahcysiadroftuptuokcolcdetarenegeR TUO_NACS1 1B. niptsettuptuogolanA EDOM_TSET6 B. nacslanretnirofnipedomtseT FERV9 C. )pagdnabV5.2arof(tupniecnerefeR CCVA2 1R,4N,21C,3C. ylppusegatlovgolanaevitisoP DDVA7 N,7C. ylppusV5golanA EEV9 P,9B,8R,9A. ylppusegatlovgolanaevitageN DNGA8 N,8B. )esioneziminim(dnuorggolanA DNGS7 R,8A. dnuorgylppuS DDVD7 P,7B. ylppusegatlovlatigiD DNGD8 P,8C. dnuorgylppuslatigiD

3 2000 Semtech Corp. www .semtech.com HIGH-PERFORMANCE PRODUCTS – ATE Edge6420 PIN Description (continued) emaNllaBn oitacoLllaBn oitpircseD C/N, 31A,21A,7A,5A,4A,3A,2A,1A ,31B,21B,4B,3B,2B,51A,41A ,3N,31C,11C,01C,4C,51B,41B ,3P,2P,1P,31N,21N,11N,5N ,3R,2R,1R,41P,31P,21P,4P 51R,41R,31R,11R,4R .detcennoctoN

4 2000 Semtech Corp. www .semtech.com HIGH-PERFORMANCE PRODUCTS – ATE Edge6420 PIN Description (continued) A1 Ball Pad Indicator 13mm x 13mm CSPBGA Package E6420 Top View 13 mm x 13 mm CSPBGA G1 G2 G3 G5 G6 G7 G8 G9 G10 G11 G13 G14 E1 E2 E3 E5 D5 D6 D7 D8 D9 D10 D11 D12 E12 F12 G12 H12 J12 K12 E6 E7 E8 E9 E10 E11 E13 E14 D1 D2 D3 D13 D14 C1 C2 C3 C4 C5 C6 C7 C8 C9 C10 C11 C12 C13 C14 B1 B2 B3 B4 B5 B6 B7 B8 B9 B10 B11 B12 B13 B14 A1 A2 A3 A4 A5 A6 A7 A8 A9 A10 A11 A12 A13 A14 A15 B15 C15 D15 E15 F15 G15 H15 J15 K15 L15 M15 N15 P15 R15 B A C D E F G H J K L M N P R 1 2 3 4 5 6 7 8 9 1 01 11 21 3 1 5 14 N1 N2 N3 N4 N5 N6 N7 N8 N9 N10 N11 N12 N13 N14 P1 P2 P3 P4 P5 P6 P7 P8 P9 P10 P11 P12 P13 P14 R1 R2 R3 R4 R5 R6 R7 R8 R9 R10 R11 R12 R13 R14 F1 F2 F3 F5 F6 F7 F8 F9 F10 F11 F13 F14 J1 J2 J3 J5 J6 J7 J8 J9 J10 J11 J13 J14 L1 L2 L3 L5 L6 L7 L8 L9 L10 L11 L12 M5 M6 M7 M8 M9 M10 M11 M12 L13 L14 M1 M2 M3 M13 M14 K1 K2 K3 K5 K6 K7 K8 K9 K10 K11 K13 K14 H1 H2 H3 H5 H6 H7 H8 H9 H10 H11 H13 H14 IOUT_CH1_0 IOUT_CH1_1 AVCC VOUT_CH1_7 VOUT_CH1_10 VOUT_CH1_8 VOUT_CH1_9 VOUT_CH1_4 VOUT_CH1_5 VOUT_CH1_6 VOUT_CH1_1 VOUT_CH1_2 VOUT_CH1_3 IOUT_CH1_3 IOUT_CH1_4 VOUT_CH1_0 IOUT_CH2_3 IOUT_CH2_2 IOUT_CH1_2 VOUT_CH2_1 IOUT_CH2_4 VOUT_CH2_0 VOUT_CH2_4 VOUT_CH2_2 VOUT_CH2_3 VOUT_CH2_6 VOUT_CH2_5 VOUT_CH2_7 VOUT_CH2_9 AVCC R_OFFSET_C AVDD AGND R_GAIN_F R_GAIN_C R_MASTER R_OFFSET_B DVDD DGND VEE R_GAIN_D R_GAIN_A R_OFFSET_D R_OFFSET_A VEE R_GAIN_E R_GAIN_B AVCC VOUT_CH2_8 IOUT_CH2_1IOUT_CH2_0 VOUT_CH2_10 AVDD DGND VREF AVCC VOUT_CH0_8 VOUT_CH0_7 VOUT_CH0_5 VOUT_CH0_6 VOUT_CH0_3 VOUT_CH0_2 VOUT_CH0_4 VOUT_CH0_0 IOUT_CH0_4 VOUT_CH0_1 IOUT_CH3_2 IOUT_CH0_2 IOUT_CH0_3 VOUT_CH3_0 IOUT_CH3_4 IOUT_CH3_3 VOUT_CH3_3 VOUT_CH3_2 VOUT_CH3_1 VOUT_CH3_6 VOUT_CH3_5 VOUT_CH3_4 VOUT_CH3_9 VOUT_CH3_8 VOUT_CH3_7 VOUT_CH3_10 IOUT_CH3_0 IOUT_CH3_1 VOUT_CH0_9 IOUT_CH0_0IOUT_CH0_1 VOUT_CH0_10 SDO TEST_MODE DVDD AGND VEE SDI SCAN_OUT RESET* CK_OUTN/C N/C N/C N/C N/C N/C N/C N/C N/C N/C N/C N/C N/C N/C N/C N/C N/C N/C N/C N/C N/C N/C N/C N/C N/C N/C N/C N/C N/C N/C N/C N/C N/C N/C N/C N/C N/C N/C N/C N/C N/C UPDATE SGND SGND VEE CE CK 1 144 142 139 136 134 131 128 125 122 119 116 113 111 109 8 76 11 10 9 14 13 12 17 16 15 20 19 18 23 21 22 26 24 25 28 27 29 31 30 32 104 102 103 101 99 100 97 96 98 94 93 95 90 91 92 87 88 89 84 85 86 81 82 83 78 79 80 3 2 141 138 135 132 129 127 124 121 118 115 112 110 108 5 4 143 140 137 133 130 126 123 120 117 114 107 105 106 34 33 35 42 45 48 51 54 58 61 65 68 71 76 77 36 38 40 43 46 49 52 55 57 60 63 66 69 74 75 37 39 41 44 47 50 53 56 59 62 64 67 70 72 73 Top View NOTE: Balls populating the inner 9x9 grid are for improved thermal dissipation. This middle grid of balls should be connected to the VEE plane or left floating. Order E6420BBG if populated middle is desired.

5 2000 Semtech Corp. www .semtech.com HIGH-PERFORMANCE PRODUCTS – ATE Edge6420 PIN Description (continued) Actual Size A1 Ball Pad Indicator 13mm x 13mm CSPBGA Package G1G8 C1C8 B1B8 A1A8 B A C D E F G H J K L M N P R 1810 N1N8 P1P8 R1R8 F1F8 J1J8 L1L8 M8 M1 K1K8 H1H8 VOUT_CH1_7 VOUT_CH1_4 VOUT_CH1_1 IOUT_CH1_3 IOUT_CH2_3 VOUT_CH2_1 VOUT_CH2_4 VOUT_CH2_6 VOUT_CH2_9 AGND DGND VEE DGND AGND SGND 1128 3127 5126 3454 3655 VOUT_CH1_8 VOUT_CH1_5 VOUT_CH1_2 IOUT_CH1_4 IOUT_CH2_2 IOUT_CH2_4 VOUT_CH2_2 VOUT_CH2_5 VOUT_CH2_8 144 IOUT_CH1_1 AVCC VOUT_CH2_10 IOUT_CH2_1 IOUT_CH1_0 139 138 140 IOUT_CH2_0 R_MASTER R_OFFSET_D SDO RESET* 136 135 137 R_OFFSET_C R_OFFSET_B R_OFFSET_A TEST_MODE CK_OUT UPDATE 134 132 133 AVDD DVDD AVDD DVDD SGND 131 129 130 5356 R_GAIN_F VEE R_GAIN_E VREF VEE VEEN/C N/C N/C N/C N/C N/C N/C N/C N/C N/C N/C N/C N/C N/C N/C N/C N/C N/C N/C N/C N/C N/CN/C N/C N/C N/C N/C N/C N/C N/C N/C N/C N/C N/C N/C N/C N/C N/C N/C N/C N/C 125 124 123 G10 D10 E10 C10 B10 A10 N10 P10 R10 F10 J10 L10 M10 K10 H10 R_GAIN_C R_GAIN_D R_GAIN_B SDI CE 122 121 120 G11 D11 E11 C11 B11 A11 N11 P11 R11 F11 J11 L11 M11 K11 H11 IOUT_CH3_1 R_GAIN_AIOUT_CH3_0 IOUT_CH0_0 SCAN_OUT CK 119 118 117 D12 E12 F12 G12 H12 J12 K12 C12 B12 A12 N12 P12 R12 L12 M12 VOUT_CH3_10 AVCC AVCC VOUT_CH0_10 IOUT_CH0_1 116 115 114 G13 E13 D13 C13 B13 A13 N13 P13 R13 F13 J13 L13 M13 K13 H13 VOUT_CH0_7 VOUT_CH0_3 VOUT_CH0_0 IOUT_CH3_2 VOUT_CH3_0 VOUT_CH3_3 VOUT_CH3_6 VOUT_CH3_9 113 104 101 112 107 G14 E14 D14 C14 B14 A14 N14 P14 R14 F14 J14 L14 M14 K14 H14 VOUT_CH0_8 VOUT_CH0_5 VOUT_CH0_2 IOUT_CH0_4 IOUT_CH0_2 IOUT_CH3_4 VOUT_CH3_2 VOUT_CH3_5 VOUT_CH3_8 111 102 110 105 A15 B15 C15 D15 E15 F15 G15 H15 J15 K15 L15 M15 N15 P15 R15 VOUT_CH0_6 VOUT_CH0_4 VOUT_CH0_1 IOUT_CH0_3 IOUT_CH3_3 VOUT_CH3_1 VOUT_CH3_4 VOUT_CH3_7 VOUT_CH0_9 109 103 100 108 106 VOUT_CH1_10AVCC VOUT_CH1_9 VOUT_CH1_6 VOUT_CH1_3 VOUT_CH1_0 IOUT_CH1_2 VOUT_CH2_0 VOUT_CH2_3 VOUT_CH2_7 142 141 143 Bottom View NOTE: Balls populating the inner 9x9 grid are for improved thermal dissipation. This middle grid of balls should be connected to the VEE plane or left floating. Order E6420BBG if populated middle is desired.

Table 1. DAC Grouping equations in the "DAC Voltage Output Overview", "DAC Current Output Overview", and specifications for details. this offset would thus be: –56.26 µA of offset current at Code 0. Note 3: Compliance specified in the table is at IOUT = 1.3mA. Maximum compliance is lower at higher currents. Please refer to specifications for compliance at other output currents. configurations for other applications.

7 2000 Semtech Corp. www .semtech.com HIGH-PERFORMANCE PRODUCTS – ATE Edge6420 Circuit Description (continued) DAC Voltage Output Overview The output voltage of Group A, B, C, and D DACs is governed by the following equation: Equation 1. where: DATA corresponds to the base-10 value of the binary data loaded into the shift register shown in Figure 2. K G[A:D] is a multiplying factor that is fixed, as follows: KGA = 4 K GB = 4 KGC = 8 K GD = 4 VREF = 2.5V Offset The offset for each of the voltage DACs is governed by the following equation: Equation 2. where: KOFFSET = 2 VREF = 2.5V External Resistors The recommended resistor values for the above equations are as follows: R_MASTER = 100KΩ (0.1% precision) R_GAIN_[A:D] = (0.4 to 1.15) * R_MASTER R_OFFSET_[A:D] = (0.0 to 1.2) * R_MASTER Minimum / Maximum Output Voltages See Table 2 for the minimum and maximum possible voltages of a voltage output. T able 2. Minimum/Maximum Output Voltages where: VOFFSET[A:D] is defined in equation 2 and Equation 3. The most negative voltage possible for the Edge6420 is –3.5V when VEE = –4.5V. Resolution The resolution of the DACs in Groups A, B, C, and D is: V RANGE_[A:D] / 213 where VRANGE_[A:D] is defined in Equation 4. Range The range of the DACs in Groups A, B, C and D is: Equation 4. VOUT_[A:D] = * KG[A:D] * VREF + VOFFSET_[A:D] R_GAIN_[A:D] R_MASTER* DATA 8192 VOFFSET_[A:D] KOFFSET R_OFFSET_[A:D] R_MASTER= ** 0.5 –VREF gnitteSCAD BSL...BSM V ]D:A[_TUO )V( H0000 V ]D:A[_TESFFO HFFF1 V ]D:A[_XAM VMAX_[A:D] = + VOFFSET_[A:D] R_GAIN_[A:D] R_MASTER KG[A:D] * VREF 8191 8192** =VRANGE_[A:D] R_GAIN_[A:D] R_MASTER 8191 8192 KG[A:D] VREF * * *

8 2000 Semtech Corp. www .semtech.com HIGH-PERFORMANCE PRODUCTS – ATE Edge6420 Circuit Description (continued) Group A DACs There are five Group A DACs/channel. Group A DACs have a centralized offset, gain and range that is independent of any other group. Group A DACs are characterized by 13 bit resolution and their typical outputs are governed by the following equation: where: Note: V REF = 2.5V Group B DACs There are two Group B DACs/channel. Group B DACs have a centralized offset, gain and range that is independent of any other group. Group B DACs are characterized by 13 bit resolution and their typical outputs are governed by the following equation:. where: Note: V REF = 2.5V Group C DACs There are two Group C DACs/channel. Group C DACs have a centralized offset, gain and range that is independent of any other group'. Group C DACs are characterized by 13 bit resolution and their typical outputs are governed by the following equation: where: Note: V REF = 2.5V Group D DACs There are two Group D DACs/channel. Group D DACs have a centralized offset, gain and range that is independent of any other group. Group D DACs are characterized by 13 bit resolution and their typical outputs are governed by the following equation: where: Note: V REF = 2.5V DAC Current Output Overview The output current of Group E and F DACs is governed by the following equation: Equation 5. where: DATA corresponds to the base-10 value of the binary data loaded into the shift resister in Figure 2. KG[E:F] is a multiplying factor that is fixed, as follows: KGE = 80 K GF = 80 VREF = 2.5V MAX_COUNT_E = 8192 MAX_COUNT_F = 64 VOUT_A = * 10 + VOFFSET_A VOFFSET_A R_GAIN_A R_MASTER* DATA 8192 R_OFFSET_A R_MASTER 5 * .5 – VOUT_B = * 10 + VOFFSET_B VOFFSET_B R_GAIN_B R_MASTER* DATA 8192 R_OFFSET_B R_MASTER 5 * .5 – VOUT_C = * 20 + VOFFSET_C VOFFSET_C R_GAIN_C R_MASTER* DATA 8192 R_OFFSET_C R_MASTER 5 * .5 – VOUT_D = * 10 + VOFFSET_D VOFFSET_D R_GAIN_D R_MASTER* DATA 8192 R_OFFSET_D R_MASTER 5 * .5 – IOUT_[E:F] = + IOFFSET_[E:F]KG[E:F] * IREF_[E:F] * DATA MAX_COUNT_[E:F] IREF_[E:F] = VREF R_GAIN_[E:F]

9 2000 Semtech Corp. www .semtech.com HIGH-PERFORMANCE PRODUCTS – ATE Edge6420 Circuit Description (continued) Offset The typical offset for each current DAC is governed by the following equations: Equation 6. IOFFSET_F = 0 Group E DACs There are 2 Group E DACs/channel. Group E DACs are characterized by:

Current outputs (current flows out of the chip)
13 bit resolution
Fixed offset (–128 * LSB typical)
Adjustable full scale range (but < 3.6 mA). The output current equation for Group E DACs is: where: 55 kΩ ≤ R_GAIN_E ≤ 156 kΩ Note: VREF = 2.5V Group F DACs There are 3 Group F DACs/channel. Group F DACs are characterized by:
Current outputs (current flows out of the chip)
6 bit resolution
Fixed offset (0 typical)
Adjustable full scale range (but < 3.6 mA). The output current equation for Group F DACs is: where: 55 kΩ ≤ R_GAIN_F ≤ 156 kΩ Note: V REF = 2.5V IOUT_E =– DATA *8192 200 R_GAIN_E 3.125 R_GAIN_E IOUT_F = DATA *64 200 R_GAIN_F IOFFSET_E =– KGE * VREF *R_GAIN_E 128 MAX_COUNT_E

10 2000 Semtech Corp. www .semtech.com HIGH-PERFORMANCE PRODUCTS – ATE Edge6420 Circuit Description (continued) sserddAl ennahCp uorGe pyTs esUlacipyT A A A A A V V V V V sleveLrotarapmoC&revirD B B V V sdlohserhTrotarapmoCUMPP C C V V hsalF,egatloVecroFUMPP egatlovrepuSgnimmargorP D D V V egatloVgnitatummoCdaoL E E I I kniSdnaecruoSdaoL stnerrucgnimmargorP F F F I I I gnillaF/gnisiR,saiBpihC tsujdAetaRwelS 13-611 . 1lennahCrofevobasatamrofemaS 74-232 . 2lennahCrofevobasatamrofemaS 36-843 . 3lennahCrofevobasatamrofemaS 46A /Nl lAI /Vs CADllarofdaoLlellaraP 552-56. )ytilibadargpuerutufrofdevreser(desutoN Address Map

Figure 1. DAC Functionality Block Diagram

RESET* for the Edge6420 is active low. on to the same state as though RESET* had been asserted. section for an example of how this functionality works. Care should be taken to ensure RESET* is invoked properly. 6420 will clear properly to the known states shown above. above sequence should be followed. pin (see truth table below). reflect the voltage at the addressed DAC's output pin. Figure 5. Voltage Output Scan

scan circuits for current outputs are shown in Figure 6. Figure 6. Current Output Scan Circuits NOTE: WHEN ADDRESS 64 IS INVOKED (PARALLEL LOAD), SCAN IS DISABLED.

15 2000 Semtech Corp. www .semtech.com HIGH-PERFORMANCE PRODUCTS – ATE Edge6420

Application Information

One application for the Edge6420 is to provide necessary DC voltages and currents for 4 channels of pin electronics (driver, receiver, load) and per pin measurement units. For example, using the:

Edge720 Load / Driver / Comparator
Edge4707 PPMU with the following specifications: Edge720
– 1.5 < driver output high < +7.5V
– 1.5 < driver output low < +7.5V
– 1.5 < comparator threshold high < +7.5V
– 1.5 < comparator threshold low < +7.5V
– 1.5 < commutating voltage < 7.5V
0 < load source current < 24 mA
0 < load sink current < 24 mA Edge 4707 PPMU
– 2.8 < PPMU (MI) compare high voltage < +2.8V
– 2.8 < PPMU (MI) compare low voltage < +2.8V
– 3.0 < PPMU (FV) < +14.0V Other
0 < flash programming voltage (VHH) < +14V Table 8 demonstrates Edge6420 settings that can be used to fulfill the above requirements. Power Supplies (for this application): 15.25 ≤ AVCC ≤ 15.75V 4.6V ≤ AVDD ≤ 5.25V 4.85 ≤ DVDD ≤ 5.15V AGND = 0, SGND = 0

Table 8. Application Chart – Possible Chip Specification Note 1: Max compliance depends on maximum current required. See specifications for limits.

Figure 7. Required External Resistors and Components a load capacitance between 10 nF and 100 nF for stability. impedance that the current outputs of the 6420 drive. and FADJ), it is recommended that 1 nF be used.

Figure 8. Compliance of Current Output DACs

Source up to 10 mA (8 mA @ TJ = 100˚C)
Sink up to 4.5 mA (3.5 mA @ TJ = 100˚C) Caution must be taken during a parallel load, particularly when the voltage DACs are loaded with a large filtering capacitor (10 to 100 nF). In this scenario, a large voltage change can induce a large current peak. For example, the currents calculated below can be induced in the VCC/ VEE supplies:
Source case:

44 DACs * 10 mA / DAC + 40 mA = 480 mA

Sink case: 44 DACs * 4.5 mA / DAC + 120 mA = 320 mA (or 280 mA @ TJ = 100˚C) in the VEE supply Therefore, the user must take care of extra power dissipation due to these currents peaks , and should avoid large voltage changes during a parallel load. Temperature Coefficient Effect on DACs There is a gain and offset temperature coefficient that should be taken into account in the system design that will affect calibration and performance. The equation for voltage drift on output DACs is as follows: OUT_A,B,C,D = ∆T * TCOFFSET_A,B,C,D + CODE * LSB * TCGAIN_A,B,C,D (%/˚C) Current outputs drift follow the following equation: ∆IOUT_E,F = ∆T * TCOFFSET_E,F + CODE * LSB * TCGAIN_E,F (%/˚C) Average values for TCOFFSET and TCGAIN can be found in the specifications. Compliance of Current Output DACs (Groups E, F) The compliance of the current output DACs (Groups E and F) is governed by the following two equations: IOUT < 2.5 mA: VCOMPLIANCE = (–250 Ω * IOUT) + AVDD – 1.875V IOUT ≥ 2.5 mA: VCOMPLIANCE = (–600 Ω * IOUT) + AVDD – 1V See Figure 8 for a graphical depiction. Note: IOUT is current sourced from output of DAC. Application Information (continued) µA µV 1 mA 2 mA 3 mA I OUT AVDD AVDD – 1 AVDD – 2 AVDD – 3 VCOMPLIANCE (1.3 mA, AVDD – 2.2V) (2.5 mA, AVDD – 2.5V) (3.6 mA, AVDD – 3.2V) Compliance Exceeded

18 2000 Semtech Corp. www .semtech.com HIGH-PERFORMANCE PRODUCTS – ATE Edge6420 Package Information (continued) 1 5 1 4 1 3 1 2 1 1 1 0 987654321 A B C D E F G H J K L M N P R D E (E1) (D1) –A– –B–

0.10 Detail B

φ0.15 M C A M B M φ b φ0.075 M C f e f SEATING PLANE // bbb C aaa C // ccc C A2 A1 A c –C– TOP VIEW BOTTOM VIEW SIDE VIEW DETAIL B DETAIL A Edge6420BBG Package SECNEREFERLANOISNEMID FERN IMM ONX AM A6 9.06 0.16 1.1 1A1 2.06 2.01 3.0 2A0 5.05 5.00 6.0 1DC SB02.11 2D0 9.210 0.310 1.31 E0 9.210 0.310 1.31 1EC SB02.11 2E0 9.210 0.310 1.31 b0 4.05 4.05 5.0 c5 2.0 aaa2 1.0 bbb0 2.0 ccc0 2.0 e8 .0 f0 8.00 9.00 0.1 M5 1 N5 22 NOTES: 1. All dimensions are in millimeters. 2. ‘e’ represents the basic solder ball grid pitch. 3. “M” represents the basic solder ball matrix size, and symbol “N” is the number of balls after depopulating. 4. ‘b’ is measurable at the maximum solder ball dimaeter after reflow parallel to primary datum –C–. 5. Dimension ‘aaa’ is measured parallel to primary datum –C–. 6. Primary datum –C– and seating plane are defined by the spherical crowns of the solder balls. 7. Package surface shall be matte finish charmilles 24 to 27. 8. Package centering to substrate shall be 0.0780 mm maximum for both X and Y directions respectively. 9. Package warp shall be 0.050 mm maximum. 10. Substrate material base is BT resin. 11. The overall package thickness “A” already considers collapse balls. 12. Dimensioning and tolerancing per ASME Y14.5M 1994. NOTE: The inner 9x9 balls are for improved thermal dissipation. They will be at the VEE potential, so board layout should ensure that these inner balls are connected to the VEE plane.

19 2000 Semtech Corp. www .semtech.com HIGH-PERFORMANCE PRODUCTS – ATE Edge6420 Recommended Operating Conditions retemaraPl obmySn iMp yTx aMs tinU ylppuSrewoPgolanAevitisoPC CVA5 2.51+5 .51+5 7.51+V 2ylppuSrewoPgolanAevitisoPD DVA6 .4+5 +5 2.5+V ylppuSrewoPevitageNE EV – 52.5 –5 – 3.4V )2etoN(egatloVecnerefeRF ERV0 05.2V )1etoN(dnuorGylppuSD NGS5 2.– 05 2.+V 1ylppuSgolanAlatoTC CVA – EEV5 .023 2+V ylppuSrewoPlatigiDD NGD–DDVD0 0.30 .50 5.5V )1etoN(dnuorGlatigiDD NGD5 2.– 05 2.+V )GBB0246(egakcaPfoecnatsiseRlamrehT )egakcapforetnec-pottaderusaem( θ cj 3 ˚ W/C )egakcapfopotta(erutarepmeTesaCT ESAC 040 8 C˚ All Power Supply voltages are referred to AGND, the reference signal ground, unless othewise specified. Note 1: Not production tested. Note 2: User should use a precision supply for VREF setting because the offset and gain of all DACs will change proportionately to a deviation from VREF = 2.500V. See Equations 1 and 5 to determine the extent of offset and gain change to deviations in VREF .

20 2000 Semtech Corp. www .semtech.com HIGH-PERFORMANCE PRODUCTS – ATE Edge6420 Absolute Maximum Ratings All Power Supply voltages are referred to AGND, the reference signal ground, unless othewise specified. Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only, and functional operation of the device at these, or any other conditions beyond those listed, is not implied. Exposure to absolute maximum conditions for extended periods may affect device reliability. Note 1: Exceeding this limit may result in a monostable output state at maximum current. Note 2: Full scale step definition: 11.5V step for Group A, B, D DACs, 20V step for Group C, 3.6 mA steps for Groups E and F . retemaraPl obmySn iMx aMs tinU ylppuSgolanAevitisoP 2ylppuSgolanAevitisoP ylppuSgolanAevitageN CCVA DDVA EEV .– 53 53.– – 5.5 02+ 5.5+ 53.+ V V V ylppuSrewoPlatigiDD NGD–DDVD5 3.– 5.5+V ylppuSrewoPlatoTC CVA – EEV CCVA – DDVA DNGD DNGS 53.– 5.5– 53.– 53.– 52+ 02+ 53.+ 53.+ V V V V segatloVtupnIlatigiD ,*TESER,ETADPU,KC,EC EDOM_TSET,IDS 53.–DNGD5 3.+DDVDV segatloVtupnIgolanAV FER V, RETSAM , V ]D:A[_TESFFO ,V ]F:E[_NIAG V ]D:A[_NIAG 53.–DNGA 53.–EEVA 53.+DDVA 53.+DNGA V V stnerruCtupnIgolanA I ]F:E[_NIAG I RETSAM Am Am segatloVtuptuOgolanA D,C,B,AspuorG F,EspuorG ]D:A[_TUOV ]F:E[_TUOV 53.–EEVA 53.–DNGA 53.+CCVA 53.+DDVA V V stnerruCtuptuOgolanA tnerruCCDsuounitnoCD,C,B,AspuorG] D:A[_TUOI0 03– 003+A µ )1etoN()F,EspuorG(ecnailpmoCegatloVtuptuO 3.3V evisseccuSneewteBderiuqeRemiTmuminiM sCAD46llafosdaoLlellaraP C@ DAOL )2etoN(spetSelacSlluF,Fn001= nimT2 s m erutarepmeTegarotS erutarepmeTnoitcnuJ erutarepmeTgniredloS )nipehtmorf"52.,sdnoces5( ST JT LOST – 560 51+ 521+ 062+

21 2000 Semtech Corp. www .semtech.com HIGH-PERFORMANCE PRODUCTS – ATE Edge6420 DC Characteristics retemaraPl obmySn iMp yTx aMs tinU ,ETADPU,KC,EC,IDS(stupnIlatigiD )EDOM_TSET,*TESER egatloVwoLtupnI egatloVhgiHtupnI tnerruCtupnI LIV HIV HII,LII 4.2 V V Aµ )TUO_KC,0DS(stuptuOlatigiD I@egatloVwoLtuptuO LO Am6.1= I@egatloVhgiHtuptuO HO Am4.0–= LOV HOV4 .2 DDVD V V stuptuOCAD )stuptuOegatloV(D,B,AspuorG noituloseR 31s tiB egnaRegatloVtuptuOxaM 4.=RETSAM_R/NIAG_R@ 1=RETSAM_R/NIAG_R@ 51.1=RETSAM_R/NIAG_R@ EGNAR_TUOV 8.9 5.11 2.01 V V V )H0000=ATAD(egnaRtesffOtuptuO 0.0=RETSAM_R/TESFFO_R@ 5.0=RETSAM_R/TESFFO_R@ 0.1=RETSAM_R/TESFFO_R@ 2.1=RETSAM_R/TESFFO_R@ V TESFFO 06.2– 5.2 5.2– 5.3– 53.2– V V V V ecnailpmoCtnerruCtuptuO 001– 001+A µ stuptuOegatloVfomoordaeH )1etoN()timilecnailpmoctnerrucgniniatniamelihw( CCVot)xam(TUOV EEVot)nim(TUOV )xam(TUOV–CCVA EEV–)nim(TUOV 52.1 00.1 V V tnioP9htiwrorrEytiraeniLlargetnI )2etoN(noitarbilaC 5.2– 5.2B SL tnioP2htiwrorrEytiraeniLlargetnI )4etoN(noitarbilaC 51– 51B SL rorrEytiraeniLlaitnereffiD 1– 1B SL )6,3setoN(oCpmeTniaGC T D,B,A_NIAG 58200.– C˚/% )6,3setoN(oCpmeTtesffO 0.0=RETSAM_R/TESFFO_R@ 5.0=RETSAM_R/TESFFO_R@ 0.1=RETSAM_R/TESFFO_R@ 2.1=RETSAM_R/TESFFO_R@ CT D,B,A_TESFFO 882– 011– 541+ 132+ C˚/Vµ C˚/Vµ C˚/Vµ C˚/Vµ

22 2000 Semtech Corp. www .semtech.com HIGH-PERFORMANCE PRODUCTS – ATE Edge6420 DC Characteristics (continued) retemaraPl obmySn iMp yTx aMs tinU )stuptuOegatloV(CpuorG noituloseR 31s tiB egnaRegatloVtuptuOxaM )HFFFI=ATAD( 4.=RETSAM_R/NIAG_R@ 6.=RETSAM_R/NIAG_R@ 58.=RETSAM_R/NIAG_R@ EGNAR_TUOV 57.61 712 2.71 V V V egnaRtesffOtuptuO )H0000=ATAD( @ 0.0=RETSAM_R/TESFFO_R @ 5.0=RETSAM_R/TESFFO_R @ 1.1=RETSAM_R/TESFFO_R @ 2.1=RETSAM_R/TESFFO_R V TESFFO 01.3– 5.2 0.3– 5.3– 9.2– V V V V ecnailpmoCtnerruCtuptuO0 01– 001+A µ CpuorG–stuptuOegatloVfomoordaeH )timilecnailpmoctnerrucgniniatniamelihw( )1etoN( CCVot)xam(TUOV EEVot)nim(TUOV )xam(TUOV–CCVA EEV–)nim(TUOV 52.1 00.1 V V tnioP9htiwrorrEytiraeniLlargetnI )2etoN(noitarbilaC 3– 3B SL tnioP2htiwrorrEytiraeniLlargetnI )4etoN(noitarbilaC 02– 02B SL rorrEytiraeniLlaitnereffiD1 – 1B SL )6,3setoN(oCpmeTniaGC T C_NIAG 2100.– C˚/% )6,3setoN(oCpmeTtesffO @ 0.0=RETSAM_R/TESFFO_R @ 5.0=RETSAM_R/TESFFO_R @ 1.1=RETSAM_R/TESFFO_R @ 2.1=RETSAM_R/TESFFO_R CT C_TESFFO 052– 77– 042+ 661+ C˚/Vµ C˚/Vµ C˚/Vµ C˚/Vµ

23 2000 Semtech Corp. www .semtech.com HIGH-PERFORMANCE PRODUCTS – ATE Edge6420 DC Characteristics (continued) retemaraPl obmySn iMp yTx aMs tinU )stuptuOtnerruC(EpuorG noituloseR 31s tiB egnaRtnerruCtuptuOxaM k55=E_NIAG_R@ Ω k5.26=E_NIAG_R@ Ω k651=E_NIAG_R@ Ω TUOI 90.3 6.3 2.3 82.1 53.3 Am Am Am )6,1setoN(ecnailpmoCegatloVtuptuO Am3.1@ Am5.2@ Am2.3@ Am6.3@ 02.0– 02.0– 02.0– 02.0– 02.2–DDVA 05.2–DDVA 29.2–DDVA 02.3–DDVA V V V V tniop9htiwrorrEytiraeniLlargetnI )2etoN(noitarbilaC 2– 2B SL tniop2htiwrorrEytiraeniLlargetnI )4etoN(noitarbilaC 51– 51B SL rorrEytiraeniLlaitnereffiD1 – 1B SL tesffOtnerruC )BSL*821–( 02– – BSL*821) BSL*821–( 02+ Aµ )6,3setoN(oCpmeTniaGC T E_NIAG 1200.– C˚/% )6,3setoN(oCpmeTtesffOC T E_TESFFO 001±C ˚/An )stuptuOtnerruC(FpuorG noituloseR 6s tiB egnaRtnerruCtuptuOxaM K55=F_NIAG_R@ Ω K5.26=F_NIAG_R@ Ω K651=F_NIAG_R@ Ω TUOI 90.3 45.3 51.3 62.1 53.3 Am Am Am )6,1setoN(ecnailpmoCegatloVtuptuO Am3.1@ Am5.2@ Am51.3@ Am6.3@ 02.0– 02.0– 02.0– 02.0– 02.2–DDVA 05.2–DDVA 98.2–DDVA 02.3–DDVA V V V V htiwrorrEytiraeniLlargetnI )5etoN(noitarbilaCtnioP2 52.0– 52.0B SL rorrEytiraeniLlaitnereffiD1 – 1B SL tesffOtnerruC0 2– 00 2A µ )6,3setoN(oCpmeTniaGC T F_NIAG 7500.– C˚/% )6,3setoN(oCpmeTtesffOC T F_TESFFO 32±C ˚/An

24 2000 Semtech Corp. www .semtech.com HIGH-PERFORMANCE PRODUCTS – ATE Edge6420 Note 1: Not production tested. Guaranteed by bench characterization. Note 2: The 9 calibration points recommended are: DATA values of 0000H, 03FFH, 07FFH, 0BFFH, OFFFH, 13FFH, 17FFH, 1BFFH, 1FFFH. Note 3: Assuming R_MASTER = 100 KΩ , stable VREF , nominal external resistor values, and stable supply voltage values. Note 4: Calibration points are: Data values of 0000H and 1FFFH. Note 5: Calibration points are: Data values of OOOOH and OO3FH. Note 6: See “Applications Information” for further information. DC Characteristics (continued) All specifications are guaranteed over Recommended Operating Conditions unless otherwise noted. DC Test Conditions (unless otherwise specified): VREF = 2.50V . Power Supplies retemaraPl obmySn iMp yTx aMs tinU noitpmusnoCylppuSrewoP )6etoN(1ylppuSgolanAevitisoP )6etoN(2ylppuSgolanAevitisoP )6etoN(ylppuSlatigiD )6etoN(1ylppuSrewoPevitageN ylppuSecnerefeR CCI DDAI DDDI EEI FERI 811– 5.02 37– 2.0 5.14 231 4.1 Am Am Am Am Am )1etoN(oitaRnoitcejeRylppuSrewoP zHM5 zHM1 zHK001 RRSP Bd Bd Bd )1etoN(ytivitisneSCD–ylppuSrewoP ∆ /TUOV ∆ DDVA 04B d

26 2000 Semtech Corp. www .semtech.com HIGH-PERFORMANCE PRODUCTS – ATE Edge6420

Ordering Information

10021 Willow Creek Rd., San Diego, CA 92131 Phone: (858)695-1808 FAX (858)695-2633 rebmuNledoMe gakcaP GBB0246EA GBmm31xmm31,llaB522 MVE0246d raoBnoitaulavE0246egdE

27 2000 Semtech Corp. www .semtech.com HIGH-PERFORMANCE PRODUCTS – ATE Edge6420

Revision History

Current Revision: April 29, 2002 Previous Revision: September 25, 2001 #egaPe maNnoitceSn oisiveRsuoiverP noisiveRtnerruC llal lAy ranimilerP ."yranimilerP"evomeR ."laniF"wonteehsataD 1n oitpircseD. ecafretnilairestib1agnisudemmargorperasCADehT .ecafretnilairesagnisudemmargorperasCADehT 5,4,3s noitpircseDniP :ddA srebmuNllaB)tcennoCoN(C/N 01p aMsserddAD BTe gatloVgnitatummoCdaoL 71n oitamorfnIegakcaP :evomeR egakcaPGBA0246egdE 12s citsiretcarahCCDD ,B,AspuorG noitarbilaCtnioP9htiwrorrEytiraeniLlargetnI 2±:xaM noitarbilaCtnioP2htiwrorrEytiraeniLlargetnI 51±:xaM rorrEytiraeniLlaitnereffiD 1±<:xaM D,B,AspuorG noitarbilaCtnioP9htiwrorrEytiraeniLlargetnI 5.2:xaM,5.2–:niM noitarbilaCtnioP2htiwrorrEytiraeniLlargetnI 51:xaM,51–:niM rorrEytiraeniLlaitnereffiD 1:xaM,1–:niM 22s citsiretcarahCCDC puorG noitarbilaCtnioP9htiwrorrEytiraeniLlargetnI 3±:xaM noitarbilaCtnioP2htiwrorrEytiraeniLlargetnI 02±:xaM rorrEytiraeniLlaitnereffiD 1±<:xaM D,B,AspuorG noitarbilaCtnioP9htiwrorrEytiraeniLlargetnI 3:xaM,3–:niM noitarbilaCtnioP2htiwrorrEytiraeniLlargetnI 02:xaM,02–:niM rorrEytiraeniLlaitnereffiD 1:xaM,1–:niM 32s citsiretcarahCCDE puorG noitarbilaCtnioP9htiwrorrEytiraeniLlargetnI 2±:xaM noitarbilaCtnioP2htiwrorrEytiraeniLlargetnI 51±:xaM rorrEytiraeniLlaitnereffiD 1±<:xaM EspuorG noitarbilaCtnioP9htiwrorrEytiraeniLlargetnI 2:xaM,2–:niM noitarbilaCtnioP2htiwrorrEytiraeniLlargetnI 51:xaM,51–:niM rorrEytiraeniLlaitnereffiD 1:xaM,1–:niM 42s citsiretcarahCCD FpuorG noitarbilaCtnioP2htiwrorrEytiraeniLlargetnI 52.0±:xaM rorrEytiraeniLlaitnereffiD 1±<:xaM FpuorG noitarbilaCtnioP2htiwrorrEytiraeniLlargetnI 52.0:xaM,52.0–:nIM rorrEytiraeniLlaitnereffiD 1:xaM,1–:niM 42s eilppuSrewoPy lppuSrewoPevitageN :evoM nmulocniMotxaMmorf811– 52s citsiretcarahCCA CpuorGrofV71,petSelacSlluF 014:pyT,Fn001:daoL CpuorGrofV71,petSelacSlluF 014.0:pyT,Fn001:daoL 62n oitamrofnIgniredrO :evomeR GBA0246E

28 2000 Semtech Corp. www .semtech.com HIGH-PERFORMANCE PRODUCTS – ATE Edge6420 Current Revision: September 25, 2001 Previous Revision: August 3, 2001 #egaPe maNnoitceSn oisiveRsuoiverPn oisiveRtnerruC 61 noitacilppA noitamrofnI 0246ehtfonoitapissiDrewoPgnidrageRnoituaC daoLlellaraPgniruD noitceseritnedroweR 91 dednemmoceR snoitidnoCgnitarepO 1ylppuSrewoPevitageN )3,1setoN(2dnuorGgolanA :eteleD scepsllamorf)DNGAotderrefer( ylppuSrewoPevitageN )1etoN(dnuorGylppuS :eteleD dnuorGgolanA 2etoNwensemoceb4etoN,3,2etoNeteleD:setoN :ddA setonfogninnigebta"...segatlovylppuSrewoPllA" 02s gnitaRxaMbA 2ylppuSgolanAevitisoP DDVD:myS,ylppuSrewoPlatigiD ylppuSrewoPlatoT DNGA–DNGS,ENGA–DNGD 53.–:niM DNGD–DDVD:myS,ylppuSrewoPlatigiD ylppuSrewoPlatoT DNGS,DNGD :eteleD scepsDNGA–EEVdnaDNGA–DDVA :ddA setonfogninnigebta"...segatlovylppuSrewoPllA" 12s citsiretcarahCCD egnaRegatloVtuptuOxaM 41.01:xaM,68.9:niM,1=RETSAM_R/NIAG_R@ egnaRegatloVtuptuOxaM 2.01:xaM,8.9:niM,1=RETSAM_R/NIAG_R@ egnaRtesffOtuptuO 4.2–:xaM,6.2–:niM,0.1=RETSAM_R/TESFFO_R@ egnaRtesffOtuptuO 53.2–:xaM,06.2–:niM,0.1=RETSAM_R/TESFFO_R@ 582000.–:pyT,oCpmeTniaG 58200.–:pyT,oCpmeTniaG oCpmeTtesffO V5.2=TESFFOV@ 27–:pyT,0=TESFFOV@ V5.2–=TESFFOV@ V5.3–=TESFFOV@ oCpmeTtesffO 0.0=RETSAM_R/TESFFO_R@ 011–:pyT,5.0=RETSAM_R/TESFFO_R 0.1=RETSAM_R/TESFFO_R@ 2.1=RETSAM_R/TESFFO_R@ 22s citsiretcarahCCDe gnaRtesffOtuptuO ,1.1=RETSAM_R/TESFFO_R@ 59.2–:xaM,50.3–:niM egnaRtesffOtuptuO ,1.1=RETSAM_R/TESFFO_R@ 9.2–:xaM,01.3–:niM 744000.–:pyT,oCpmeTniaG 2100.–:pyT,oCpmeTniaG oCpmeTtesffO V5.2=TESFFOV@ 0=TESFFOV@ 231+:pyT,V0.3–=TESFFOV@ V5.3–=TESFFOV@ oCpmeTtesffO 0.0=RETSAM_R/TESFFO_R@ 5.0=RETSAM_R/TESFFO_R@ 042+:pyT,1.1=RETAM_R/TESFFO_R@ 2.1=RETSAM_R/TESFFO_R@ 32s citsiretcarahCCDE puorG egnaRtnerruCtuptuOxaM 23.3:xaM,41.3:niM,5.26=#_NIAG_R@ ecnailpmoCegatloVtuptuO 92.0–:niM,Am6.3 egnaRtnerruCtuptuOxaM 53.3:xaM90.3:niM,5.26=#_NIAG_R@ Am2.3@:ddA:ecnailpmoCegatloVtuptuO 02.0–:niM,Am6.3 92100.–:pyT,oCpmeTniaG 1200.–:pyT,oCpmeTniaG FpuorG ecnailpmoCegatloVtuptuO 2±:xaM,rorrEytiraeniLlargetnI FpuorG :ecnailpmoCegatloVtuptuO :ddA Am51.3 52.0±:xaM,rorrEytiraeniLlargetnI 92100.–:pyT,oCpmeTniaG 32+:pyT,oCpmeTtesffO 7500.–:pyT,oCpmeTniaG 32±:pyT,oCpmeTtesffO 42s citsiretcarahCCD ylppuSlatigiD,2ylppuSgolanAevitisoP 811:xaM,37:niM,ylppuSrewoPevitageN HFFFIdna...:4etoN 6etoNddA 811–:xaM,37–:niM,ylppuSrewoPevitageN HFFF1dna...:4etoN 52s citsiretcarahCCAD DVDtaxamF5 etoNddA

29 2000 Semtech Corp. www .semtech.com HIGH-PERFORMANCE PRODUCTS – ATE Edge6420 Current Revision: August 3, 2001 Previous Revision: June 28, 2001 #egaPe maNnoitceSn oisiveRsuoiverPn oisiveRtnerruC llAt egraTy ranimilerP 7 tuptuOtnerruCCAD tesffO&weivrevO :ddA srebmunnoitauqE 418 elbaT2 1,11slennahC An951.0:noituloseR 21,11slennahC An951:noituloseR :eteleD 2etoN 51n oitamrofnInoitacilppA siti...:ecnetnestsal,stuptuOtnerruC .desuebFp001tahtdednemmocer Fn1otFp001egnahc .desuebFn1tahtdednemmocersiti... 61t neiciffeoCerutarepmeT sCADnotceffE foyrammusarofhcetmeStcatnoC",hpargaraptsaL:ddA CTeviredotsnoitauqe TESFFO CTdna NIAG . 71e gakcaPGBA02463 etoN :eteleD "mm03.0f"tublla 91 dednemmoceR snoitidnoCgnitarepO :eteleD 2&1setoN :ddA setongniniamerrebmuner,4dna1setoNweN :xaM,00005.2:pyT,574.2:niM,egatloVecnerefeR 525.2 seulavxaM&niMeteled,005.2:pyT,egatloVecnerefeR 51.5:xaM,58.4:niM,ylppuSrewoPlatigiD 05.5:xaM,00.3:niM,ylppuSrewoPlatigiD ,DBT:pyT,egakcaPfoecnatsiseRlamrehT C˚:stinU retnec-pottaderusaem(egakcaPfoecnatsiseRlamrehT W/C˚:stinU,3:pyT,)egakcapfo 02s gnitaRxaMbAs egatloVtupnIlatigiD :ddA slobmySot"EDOM_TSET,IDS" 12s citsiretcarahCCD2 100.–:pyT,oCpmeTniaG 582000.–:pyT,)6,3setoN(oCpmeTniaG 423+,632+,0,002–:pyT,ocpmeTtesffO 132+,541+,27–,882–:pyT,ocpmeTtesffO 22s citsiretcarahCCD :xaM,noitarbilaCtnioP2htiwrorrEytiraeniLlargetnI ,noitarbilaCtnioP2htiwrorrEytiraeniLlargetnI 3±:xaM 5100.–:pyT,oCpmeTniaG 744000.–:pyT,)6,3setoN(oCpmeTniaG 523+,DBT,0,002–:pyT,oCpmeTtesffO 661+,231+,77–,052–:pyT,oCpmeTtesffO 32s citsiretcarahCCDE puorG 8100.–:pyT,oCpmeTniaG ,DBT:pyT,oCpmeTtesffO FpuorG ocpmeTniaG DBT:pyT,oCpmeTtesffO EspuorG 92100.–:pyT,)6,3setoN(oCpmeTniaG 001±:pyT,oCpmeTtesffO FpuorG )6,3setoN(ocpmeTniaG 32±:pyT,oCpmeTtesffO 42s citsiretcrahCCDD BT:xaM,DBT:pyT,ylppuSlatigiD oitaRnoitcejeRylppuSrewoP DBT:pyT,zHM1 DBT:pyT,zHk005 DBT:pyT,zHk001 01:xaM,2:pyT,ylppuSlatigiD oitaRnoitcejeRylppuSrewoP 56–:pyT,zHM5 54–:pyT,zHM1 05–:pyT,zHk001 :ddA ytivitisneSCD–ylppuSrewoP 42 scitsiretcrahCCD )setoN( V00005.2=FERVV 05.2=FERV 52s citsiretcarahCCA) 4etoN(V3.3=DDVDtaxamF )1etoN(V0.5=DDVDtaxamF )1etoN(V03.±V3.3=DDVDtaxamF )4etoN(V05.±V0.5=DDVDtaxamF V01ot0,petSelacSlluF ,DBT:xaM,Fn001:daoL,DBT:xaM,Fn01:daoL sm:stinU Sµ:stinU,Fn001:daoL,V71ot0,petSelacSlluF V01,petSelacSlluF :stinU,007:xaM,Fn001:daoL,07:xaM,Fn01:daoL sµ sm:stinU,Fn001:daoL,V71,petSelacSlluF ytivitisneSylppuSrewoP:eteleD ...ylnozHM33tadetset:4etoN ecnetnestsaleteled;ylnozHM55tadetset:4etoN

Summary

Per-Pin Electronics Companion DAC

Description

The Edge6420 is a monolithic device which has 64 integrated DACs that are designed specifically for all per channel wide-voltage and current levels needed for pin electronics inside automatic test equipment. The chip can also be used for other applications requiring multiple integrated voltage or current DAC outputs.

Source title 6420EVM Datasheet(PDF) - Semtech Corporation

Read 6420EVM online.