63CTQ100G THINKISEMI | Alldatasheet
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Technical content
60Ampere,100Volt Heat Sink Dual Common Cathode Schottky Barrier Rectifiers 63CTQ100G © 1995 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com.tw/ Page 1/3Rev.09T
FEATURES
- Plastic package has Underwriters Laboratory Flammability Classification 94V-O. Flame Retardant Epoxy Molding Compound.
- Metal silicon junction, majority carrier conduction
- Low power loss, high efficiency.
- High current capability
- Guardring for overvoltage protection
- For use in low voltage,high frequency inverters free wheeling , and polarlity protection applications.
- In compliance with EU RoHS 2002/95/EC directives MECHANICAL DATA
- Case: TO-220AB heatsink
- Terminals: solder plated, solderable per MIL-STD-750, Method 2026
- Polarity: As marked.
- Mounting Position: Any
- Weight: 2.2 gram approximately. TO-220AB/TO-220-3L Unit : inch (mm) .196(5.00) .054(1.39) .038(0.96) .419(10.66) .139(3.55) MIN .624(15.87) .269(6.85) .548(13.93) .50(12.7)MIN .177(4.5)MAX .226(5.75) .163(4.16) .045(1.15) .019(0.50) .025(0.65)MAX .1(2.54).1(2.54) .387(9.85) Positive Negative Common Cathode Case Case Case Common Anode Prefix "63CT" Case Series Tandem Polarity Prefix "63AT" Prefix "63ST" Doubler Tandem Polarity Prefix "63DT" MAXIMUM RATINGS (Per Diode Leg) Rating Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage V RRM V RWM V R 100 V Average Rectified Forward Current C = 155°C) Per Diode Per Device I F(AV) A Peak Repetitive Forward Current (Square Wave, 20 kHz, T C = 151°C) I FRM A Nonrepetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 60 Hz) I FSM 350 A Operating Junction Temperature (Note 1) T J +175 Storage Temperature T stg /C004265 to +175 Voltage Rate of Change (Rated V R dv/dt 10,000 V//C0109s Controlled Avalanche Energy (see test conditions in Figures 9 and 10) W AVAL 400 mJ ESD Ratings: Machine Model = C Human Body Model = 3B > 400 > 8000 V Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above t he Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. The heat generated must be less than the thermal conductivity from Junction −to−Ambient: dP D /dT J < 1/R /C0113JA THERMAL CHARACTERISTICS Characteristic Symbol Value Unit Maximum Thermal Resistance − Junction−to−Case (Min. Pad) − Junction−to−Ambient (Min. Pad) R /C0113JC R /C0113JA 1.0 °C/W
ELECTRICAL CHARACTERISTICS
(Per Diode Leg) Characteristic Symbol Min Typ Max Unit Maximum Instantaneous Forward Voltage (Note 2) F = 30 A, T J = 25°C) F = 30 A, T J = 125°C) F = 60 A, T J = 25°C) F = 60 A, T J = 125°C) v F 0.80 0.68 0.93 0.81 0.84 0.72 0.98 0.84 V Maximum Instantaneous Reverse Current (Note 2) (Rated DC Voltage, T J = 125°C) (Rated DC Voltage, T J = 25°C) i R 2.0 0.0013 0.01 mA 2. Pulse Test: Pulse Width = 300 /C0109s, Duty Cycle ≤ 2.0%.