63CNQ SMCDIODE | Alldatasheet

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Data Sheet N1054, Rev. A  China - Germany - Korea - Singapore - UnitedStates  http://www.smc-diodes.com - sales@smc-diodes.com 63CNQ SERIES 63CNQ080/63CNQ100 SCHOTTKY RECTIFIER Applications Features 63CNQ… 63CNQ…SL 63CNQ…SM PRM3 PRM3-SL PRM3-SM Maximum Ratings(limiting values, at 25 °C unless otherwise specified): Characteristics Symbol Condition Max. Units PeakRepetitiveReverseVoltage WorkingPeakReverseVoltage DCBlockingVoltage VRRM VRWM VR - 80(63CNQ080) 100(63CNQ100) V AverageRectifiedForwardCurrent IF(AV) 50%dutycycle@TC=155°C, rectangularwaveform 30(PerLeg) A60(PerDevice) PeakOneCycleNon-RepetitiveSurge Current(Perleg) IFSM 8.3ms,halfSinepulse 750 A Non-RepetitiveAvalancheEnergy (Pegleg) EAS TJ=25℃,IAS=1A,L=30mH 15 mJ RepetitiveAvalancheCurrent(Pegleg) IAR Current decaying linearly to zero in 1 μsec Frequency limited by TJ max. VA=1.5×VR typical 1 A  175℃ TJ operation  Center tap module  Very Low forward voltage drop  High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance  High frequency operation  Guard ring for enhanced ruggedness and long term reliability  Low profile, high current package  This is a Pb − Free Device  All SMC parts are traceable to the wafer lot  Additional electrical and life testing can be performed upon request  Switching power supply  Converters  Free-Wheeling diodes  Reverse battery protection

Data Sheet N1054, Rev. A  China - Germany - Korea - Singapore - UnitedStates  http://www.smc-diodes.com - sales@smc-diodes.com 63CNQ SERIES * Pulsewidth<300µs, dutycycle<2% Characteristics Symbol Condition Specification Units JunctionTemperature TJ - -55to+175 C StorageTemperature Tstg - -55to+175 C TypicalThermalResistance JunctiontoCase (perleg) RJC DCoperation 0.5 C/W TypicalThermalResistance JunctiontoCase (perpackage) RJC DCoperation 0.25 C/W TypicalThermalResistance,case toHeatSink Rcs Mountingsurface,smoothand greased 0.21 C/W MountingTorque TM - 40(min) Kg-cm58(max) CaseStyle PRM3PRM3-SLPRM3-SM Electrical Characteristics: Characteristics Symbol Condition Typ. Max. Units ForwardVoltageDrop (Perleg)* VF1 @30A,Pulse,TJ =25C @60A,Pulse,TJ =25C 0.76 0.82 0.80 0.93 V VF2 @30A,Pulse,TJ =125C @60A,Pulse,TJ =125C 0.64 0.71 0.70 0.76 V ReverseCurrent(Perleg)* IR1 @VR =ratedVR TJ =25C 0.3 1500 uA IR2 @VR =ratedVR TJ =125C 0.1 20 mA JunctionCapacitance (Perleg) CT @VR =5V,TC =25C fSIG =1MHz 1340 1400 pF VoltageRateofChange dv/dt - - 10,000 V/s Thermal-Mechanical Specifications:

Data Sheet N1054, Rev. A  China - Germany - Korea - Singapore - UnitedStates  http://www.smc-diodes.com - sales@smc-diodes.com 63CNQ SERIES Ratings and Characteristics Curves Marking Diagram WhereXXXX isYYWW 1st row SSYYWWL 2ndrow 63CNQ080/SL/SM 3rdrow 123(pin) SS =SS YY =Year WW =Week Cautions：Molding resin Epoxy resin UL:94V-0

Data Sheet N1054, Rev. A  China - Germany - Korea - Singapore - UnitedStates  http://www.smc-diodes.com - sales@smc-diodes.com 63CNQ SERIES Device Package Approximate Weight(g) Terminals finish Base plate finish Shipping 63CNQ080 PRM3 8.6 Nickelplated Nickelplated 48pcs/box 63CNQ080S2 PRM3 8.6 PureSndipped(dippedheigh6-8mm) Nickelplated 48pcs/box 63CNQ100 PRM3 8.6 Nickelplated Nickelplated 48pcs/box 63CNQ100S2 PRM3 8.6 PureSndipped(dippedheigh6-8mm) Nickelplated 48pcs/box 63CNQ080SL PRM3-SL 5.3 PureSnplated PureSnplated 100pcs/box 63CNQ100SL PRM3-SL 5.3 PureSnplated PureSnplated 100pcs/box 63CNQ080SM PRM3-SM 5.6 Nickelplated Nickelplated 48pcs/box 63CNQ080SMS2 PRM3-SM 5.6 PureSndipped(dippedheigh6-8mm) Nickelplated 48pcs/box 63CNQ100SM PRM3-SM 5.6 Nickelplated Nickelplated 48pcs/box 63CNQ100SMS2 PRM3-SM 5.6 PureSndipped(dippedheigh6-8mm) Nickelplated 48pcs/box

Ordering Information

Mechanical Dimensions PRM3 (Inches/Millimeters) SYMBOL Millimeters Inches Min. Max. Min. Max. A 37.72 38.23 1.485 1.506 B 5.08 0.200 C 0.62 1.02 0.024 0.040 D 10.38 12.98 0.408 0.511 E 0.88 1.22 0.034 0.048 F 8.46 9.06 0.333 0.357 G 9.24 9.85 0.363 0.388 H 0.61 0.92 0.024 0.037 I 3.19 4.19 0.125 0.165 J 6.95 7.55 0.273 0.298 K 2.40 2.60 0.094 0.103 L 29.51 30.40 1.161 1.197 M 3.75 4.33 0.147 0.171

Data Sheet N1054, Rev. A  China - Germany - Korea - Singapore - UnitedStates  http://www.smc-diodes.com - sales@smc-diodes.com 63CNQ SERIES Mechanical Dimensions PRM3-SL (Inches/Millimeters) SYMBOL Millimeters Inches Min. Max. Min. Max. A 19.70 20.30 0.776 0.799 B 16.51 17.02 0.650 0.670 C 0.62 1.02 0.024 0.040 D 4.97 5.97 0.196 0.235 E 0.88 1.22 0.034 0.048 F 8.46 9.06 0.333 0.357 G 2.04 2.54 0.080 0.100 H 0.61 0.92 0.024 0.037 I 3.19 4.19 0.125 0.165 J 6.95 7.55 0.274 0.297 K 2.21 2.71 0.087 0.106 L 5.08 0.200 Mechanical Dimensions PRM3-SM (Inches/Millimeters) SYMBOL Millimeters Inches Min. Max. Min. Max. A 19.70 20.30 0.776 0.799 B 5.08 0.200 C 0.62 1.02 0.024 0.040 D 10.38 12.98 0.408 0.511 E 0.88 1.22 0.034 0.048 F 8.46 9.06 0.333 0.357 G 9.24 9.85 0.363 0.388 H 0.61 0.92 0.024 0.037 I 3.19 4.19 0.125 0.165 J 6.95 7.55 0.273 0.298 K 2.40 2.60 0.094 0.103

Data Sheet N1054, Rev. A  China - Germany - Korea - Singapore - UnitedStates  http://www.smc-diodes.com - sales@smc-diodes.com 63CNQ SERIES DISCLAIMER: 1-Theinformationgivenherein,includingthespecificationsanddimensions,issubjecttochangewithoutpriornoticetoimproveproduct characteristics.Beforeordering,purchasersareadvisedtocontacttheSMCDiodeSolutionssalesdepartmentforthelatestversionofthe datasheet(s). 2-Incaseswhereextremelyhighreliabilityisrequired(suchasuseinnuclearpowercontrol,aerospaceandaviation,trafficequipment, medicalequipment,andsafetyequipment),safetyshouldbeensuredbyusingsemiconductordevicesthatfeatureassuredsafetyorby meansofusers’fail-safeprecautionsorotherarrangement. 3-InnoeventshallSMCDiodeSolutionsbeliableforanydamagesthatmayresultfromanaccidentoranyothercauseduring operationof theuser’sunitsaccordingtothedatasheet(s).SMCDiodeSolutionassumesnoresponsibilityforanyintellectualpropertyclaimsoranyother problemsthatmayresultfromapplicationsofinformation,productsorcircuitsdescribedinthedatasheets. 4-InnoeventshallSMCDiodeSolutionsbeliableforanyfailureinasemiconductordeviceoranysecondarydamageresultingfromuseata valueexceedingtheabsolutemaximumrating. 5-Nolicenseisgrantedbythedatasheet(s)underanypatentsorotherrightsofanythirdpartyorSMCDiodeSolutions. 6-Thedatasheet(s)maynotbereproducedorduplicated,inanyform,inwholeorpart,withouttheexpressedwrittenpermissionofSMC DiodeSolutions. 7-Theproducts(technologies)describedinthedatasheet(s)arenottobeprovidedtoanypartywhosepurposeintheirapplicationwillhinder maintenanceofinternationalpeaceandsafetynoraretheytobeappliedtothatpurposebytheirdirectpurchasersoranythirdparty.When exportingtheseproducts(technologies),thenecessaryproceduresaretobetakeninaccordancewithrelatedlawsandregulations..