62S

BAT62-07W INFINEON | Alldatasheet

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Technical content

• Low barrier diode for detectors up to GHz frequencies VPS05605 EHA07008 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Pin Configuration Package BAT 62-07W 62s 1=C1 2=C2 3=A2 4=A1 SOT-343 Maximum Ratings Parameter Symbol UnitValue VR 40Diode reverse voltage V 20 mAIFForward current Total power dissipation, TS = 103 °C Ptot 100 mW 150 °CTjJunction temperature Storage temperature Tstg -55 ... 150 Thermal Resistance K/WRthJA ≤ 630Junction - ambient 1) Junction - soldering point RthJS ≤ 470

Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol UnitValues typ. max.min. DC characteristics 10 µA--IRReverse current VR = 40 V VF - 0.58 1 VForward voltage IF = 2 mA AC characteristics Diode capacitance VR = 0 V, f = 1 MHz CT - 0.35 0.6 pF Case capacitance f = 1 MHz CC - 0.1 - - 225 - kΩR0Differential resistance VR = 0 , f = 10 kHz Series inductance Ls - 1.8 - nH

Forward current IF = f (TA*;TS) * mounted on alumina 0 20 40 60 80 100 120 °C 150 TA,TS mA IF TS TA Forward current IF = f (VF) TA = parameter VF 1 10 2 10 3 10 4 10 uA IF TA = 25°C TA = 85°C TA = 125°C TA = -40°C Permissiple pulse load IFmax/IFDC = f(tp) 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s tp 0 10 1 10 IFmax / IFDC D = 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 Permissible Pulse Load IFmax / IFDC = f(tp) 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s tp 1 10 2 10 3 10 K/W RthJS 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D = 0

Reverse current IR = f (VR) TA = Parameter 0 5 10 15 20 25 30 V 40 VR -1 10 0 10 1 10 2 10 3 10 uA IR 0 5 10 15 20 25 30 V 40 VR -1 10 0 10 1 10 2 10 3 10 uA IR TA = 25°C TA = 85°C TA = 125°C Diode capacitance CT = f (VR) f = 1MHz 0 5 10 15 20 V 30 VR 0.0 0.1 0.2 0.3 0.4 pF 0.6 CT Rectifier voltage Vout = f (Vin) f = 900 MHz RL = parameter in kΩ 10 0 10 1 10 2 10 3 10 4 mV VI -3 10 -2 10 -1 10 0 10 1 10 2 10 3 10 4 10 mV VO 1000 500 200 100 RL=10 Testcircuit: D.U.T R IN R LC L 1nF50Ω V I V 0