FMMT620_06 ZETEX | Alldatasheet

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Technical content

SuperSOT™ 80V NPN SILICON LOW SATURATION TRANSISTOR C E B SUMMARY VCEO=80V; RSAT = 90m ;I C= 1.5A

DESCRIPTION

Enhancing the existing SuperSOT range this 80V NPN transistor utilises the Zetex matrix structure combined with advanced assembly techniques. Users are provided with high Hfe and very low sat performance ensuring low on state losses.

FEATURES

  • Extremely Low Equivalent On Resistance
  • Extremely Low Saturation Voltage
  • h FE characterised up to 3.0A
  • IC=1.5A Continuous Collector Current
  • SOT23 package

APPLICATIONS

  • DC - DC Modules
  • Power Management Functions
  • CCFL Backlighting Inverters
  • Motor control and drive functions

ORDERING INFORMATION

(inches) TAPE WIDTH (mm) QUANTITY PER REEL FMMT620TA 7 8mm embossed 3000 units FMMT620TC 13 8mm embossed 10000 units DEVICE MARKING 620 Top View SOT23

PARAMETER SYMBOL VALUE UNIT Junction to Ambient (a) R θJA 200 °C/W Junction to Ambient (b) R θJA 155 °C/W NOTES (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions (b) For a device surface mounted on FR4 PCB measured at t/H110885 secs. ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL LIMIT UNIT Collector-Base Voltage V CBO 80 V Collector-Emitter Voltage V CEO 80 V Emitter-Base Voltage V EBO 5V Peak Pulse Current I CM 5A Continuous Collector Current I C 1.5 A Base Current I B 500 mA Power Dissipation at TA=25°C (a) Linear Derating Factor PD 625 mW mW/°C Power Dissipation at TA=25°C (b) Linear Derating Factor PD 806 6.4 mW mW/°C Operating and Storage Temperature Range T j:Tstg -55 to +150 °C

Single Pulse T amb=25°C 100µs 1ms 10ms 100ms DC Safe Operating Area IC Collector Current (A) VCE Collector-Emitter Voltage (V) 0 20 40 60 80 100 120 140 160 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 Derating Curve Temperature (°C) Max Power Dissipation (W) 100µ 1m 10m 100m 1 10 100 1k 100 150 200 Transient Thermal Impedance D=0.5 D=0.2 D=0.1 Single Pulse D=0.05 Thermal Resistance (°C/W) Pulse Width (s) ISSUE 2 - JUNE 2006 SEMICONDUCTORS FMMT620 TYPICAL CHARACTERISTICS

ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated) PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS . Collector-Base Breakdown Voltage V(BR)CBO 100 180 V I C=100 /H9262A Collector-Emitter Breakdown Voltage V(BR)CEO 80 110 V I C=10mA* Emitter-Base Breakdown Voltage V (BR)EBO 78 V I E=100 /H9262A Collector Cut-Off Current I CBO 100 nA V CB=80V Emitter Cut-Off Current I EBO 100 nA V EB=5.5V Collector Emitter Cut-Off Current I CES 100 nA V CES =80V Collector-Emitter Saturation Voltage VCE(sat) 15 145 160 185 200 mV mV mV mV I C=0.1A, I B=10mA* IC=0.5A, I B=50mA* IC=1A, I B=20mA* IC=1.5A, I B=50mA* Base-Emitter Saturation Voltage V BE(sat) 0.86 1.0 V I C=1.5A, I B=50mA* Base-Emitter Turn-On Voltage V BE(on) 0.82 0.95 V I C=1.5A, V CE=2V* Static Forward Current Transfer Ratio hFE 200 300 110 450 450 170 900 I C=10mA, V CE=2V* IC=200mA, V CE=2V* IC=1A, V CE=2V* IC=1.5A, V CE=2V* IC=3A, V CE=2V* IC=5A, V CE=2V* Transition Frequency f T 100 160 MHz I C=50mA, V CE=10V f=100MHz Output Capacitance C obo 11.5 18 pF V CB=10V, f=1MHz Turn-On Time t (on) 86 ns V CC=10V, I C=500mA IB1=IB2=25mA Turn-Off Time t (off) 1128 ns *Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%

PACKAGE DIMENSIONS PAD LAYOUT DETAILS Europe Zetex GmbH Streitfeldstraße 19 D-81673 München Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 europe.sales@zetex.com Americas Zetex Inc

700 Veterans Memorial Hwy

Hauppauge, NY 11788 USA Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 usa.sales@zetex.com Asia Pacific Zetex (Asia) Ltd 3701-04 Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Telephone: (852) 26100 611 Fax: (852) 24250 494 asia.sales@zetex.com Corporate Headquarters Zetex Semiconductors plc Zetex Technology Park Chadderton, Oldham, OL9 9LL United Kingdom Telephone (44) 161 622 4444 Fax: (44) 161 622 4446 hq@zetex.com These offices are supported by agents and distributors in major countries world-wide. This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. For the latest product information, log on to www.zetex.com © Zetex Semiconductors plc 2006 DIM Millimeters Inches DIM Millimeters Inches Min Max Min Max Min Max Max Max G 1.90 NOM 0.075 NOM /H5007/H5007 /H5007 PACKAGE DIMENSIONS