619

FCX619_03 ZETEX | Alldatasheet

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Technical content

(SWITCHING) TRANSISTOR ISSUE 6 - JANUARY 2003

FEATURES

• 2W POWER DISSIPATION * 6A PEAK PULSE CURRENT * EXCELLENT h FE CHARACTERISTICS UP TO 6 Amps * EXTREMELY LOW SATURATION VOLTAGE e.g. 13mV typ. * EXTREMELY LOW EQUIVALENT ON-RESISTANCE; CE(sat) 87mΩ Ω Ω Ω at 2.75A COMPLIMENTARY TYPE - FCX720 PARTMARKING DETAIL - 619 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage V CBO 50 V Collector-Emitter Voltage V CEO 50 V Emitter-Base Voltage V EBO 5V Peak Pulse Current I CM 6A Continuous Collector Current † I C 3.0 A Base Current I B 500 mA Power Dissipation at T amb=25°C P tot 1.5† W Operating and Storage Temperature Range T j:Tstg -55 to +150 °C † recommended P tot calculated using FR4 measuring 25x25x0.6mm ‡ Maximum power dissipation is calculated assuming that the device is mounted on FR4 substrate measuring 40x40x0.6mm and using comparable measurement methods adopted by other suppliers. **Measured under pulsed conditions. Pulse width=300 µs. Duty cycle ≤ 2% Spice parameter data is available upon request for these devices Refer to the handling instructions for soldering surface mount components. FCX619 C B C E

ELECTRICAL CHARACTERISTICS (at T amb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Collector-Base Breakdown Voltage V(BR)CBO 50 190 V IC=100 µ A Collector-Emitter Breakdown Voltage V(BR)CEO 50 65 V I C=10mA* Emitter-Base Breakdown Voltage V(BR)EBO 58 . 3 V IE=100 µ A Collector Cut-Off Current ICBO 100 nA V CB=40V Emitter Cut-Off Current I EBO 100 nA V EB=4V Collector Emitter Cut-Off Current ICES 100 nA V CES =40V Collector-Emitter Saturation Voltage VCE(SAT) 13 150 190 240 220 260 320 mV mV mV mV I C=0.1A, I B=10mA* IC=1A, I B=10mA* IC=2A, I B=50mA* IC=2.75A,I B=100mA* Base-Emitter Saturation Voltage VBE(SAT) 0.97 1.1 V I C=2.75A, IB=100mA* Base-Emitter Turn-On Voltage VBE(ON) 0.89 1.0 V I C=2.75A, V CE=2V* Static Forward Current Transfer Ratio hFE 200 300 200 100 400 450 400 200 IC=10mA, V CE=2V* IC=200mA, V CE=2V* IC=1A, V CE=2V* IC=2A, V CE=2V* IC=6A, V CE=2V* Transition Frequency fT 100 165 MHz I C=50mA, V CE=10V f=100MHz Output Capacitance C OBO 12 20 pF V CB=10V, f=1MHz Turn-On Time t (ON) 170 ns V CC=10V, I C=1A IB1=-I B2=10mATurn-Off Time t (OFF) 750 ns *Measured under pulsed conditions. Pulse width=300 µs. Duty cycle ≤ 2% Spice parameter data is available upon request for this device FCX619