IDT6168SA IDT | Alldatasheet

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Technical content

Features

◆◆◆◆◆ High-speed (equal access and cycle time) – Military: 25/45ns (max.) – Industrial: 25ns (max.) – Commercial: 15/20/25ns (max.) ◆◆◆◆◆ Low power consumption ◆◆◆◆◆ Battery backup operation—2V data retention voltage (IDT6168LA only) ◆◆◆◆◆ Available in high-density 20-pin ceramic or plastic DIP and 20-pin leadless chip carrier (LCC) ◆◆◆◆◆ Produced with advanced CMOS high-performance technology ◆◆◆◆◆ CMOS process virtually eliminates alpha particle soft-error rates ◆◆◆◆◆ Bidirectional data input and output ◆◆◆◆◆ Military product compliant to MIL-STD-883, Class B

Description

The IDT6168 is a 16,384-bit high-speed static RAM organized as 4K x 4. It is fabricated using lDT’s high-performance, high-reliability Functional Block Diagram ADDRESS DECODER 16,384-BIT MEMORY ARRAY I/O CONTROL 3090 drw 01 INPUT DATA CONTROL WE CS VCC GND A11 I/O0 I/O1 I/O2 I/O3 , CMOS technology. This state-of-the-art technology, combined with inno- vative circuit design techniques, provides a cost-effective approach for high-speed memory applications. Access times as fast 15ns are available. The circuit also offers a reduced power standby mode. When CS goes HIGH, the circuit will automatically go to, and remain in, a standby mode as long as CS remains HIGH. This capability provides significant system-level power and cooling savings. The low-power (LA) version also offers a battery backup data retention capability where the circuit typically consumes only 1µW operating off a 2V battery. All inputs and outputs of the IDT6168 are TTL-compatible and operate from a single 5V supply. The IDT6168 is packaged in either a space saving 20-pin, 300-mil ceramic or plastic DIP or a 20-pin LCC providing high board-level packing densities. Military grade product is manufactured in compliance with the latest revision of MIL-STD-883, Class B, making it ideally suited to military temperature applications demanding the highest level of performance and reliability. CMOS Static RAM 16K (4K x 4-Bit) IDT6168SA IDT6168LA

CMOS Static RAM 16K (4K x 4-Bit) Military, Industrial, and Commercial Temperature Ranges Pin Configurations Absolute Maximum Ratings(1) Recommended DC Operating Conditions Recommended Operating Temperature and Supply Voltage Truth Table(1) DIP/LCC Top View Capacitance (TA = +25°C, f = 1.0MHz) Pin Descriptions 3090 drw 02 A0 1 P20-1 D20-1 L20-1 VCC CS A11 A10 WEGND I/O3 I/O2 I/O1 I/O0 Name Description A0 - A 11 Address Inputs CS Chip Select WE Write Enable I/O0 - I/O3 Data Input/Output VCC Power GND Ground 3090 tbl 01 NOTE: 1. This parameter is determined by device characterization, but is not production tested. Symbol Parameter(1 ) Conditions Max. Unit CIN Input Capacitance V IN = 0V 7 pF CI/ O I/O Capacitance V OUT = 0V 7 pF 3090 tbl 02 NOTE: 1. H = V IH, L = V IL, X = Don't Care Mode CS WE Output Power Standby H X High-Z Standby Read L H D OUT Active Write L L D IN Active 3090 tbl 03 NOTE: 1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. Symbol Rating Com'l. Mil. Unit VTE RM T erminal Voltage with Respect to GND TA Operating T emperature 0 to +70 -55 to +125 oC TBI AS T emperature Under Bias -55 to +125 -65 to +135 oC TST G Storage Temperature -55 to +125 -65 to +150 oC PT Power Dissipation 1.0 1.0 W IOUT DC Output Current 50 50 mA 3090 tbl 04 NOTE: 1. V IL (min.) = –3.0V for pulse width less than 20ns, once per cycle. Symbol Parameter Min. Typ. Max. Unit VCC Supply Voltage 4.5 5.0 5.5 V GND Ground 0 0 0 V VIH Input High Voltage 2.2 ____ 6.0 V VIL Input Low Voltage -0.5 (1 ) ____ 0.8 V 3090 tbl 05 Grade Temperature GND Vcc Military -55 OC to +125OC0 V 5 V ± 1 0 % Industrial -45 OC to +85OC0 V 5 V ± 1 0 % Commercial 0 OC to +70OC0 V 5 V ± 1 0 % 3090 tbl 06

6.42 IDT6168SA/LA CMOS Static RAM 16K (4K x 4-Bit) Military, Industrial, and Commercial Temperature Ranges (VCC = 5.0V – 10%, VLC = 0.2V, VHC = VCC - 0.2V) VCC = 5.0V – 10% Symbol Parameter Power 6168SA15 6168SA20 6168LA20 6168SA25 6168LA25 6168SA45 6168LA45 Unit & Ind. Mil. Com'l. Mil. ICC1 Operating Power Supply Current CS < VIL, Outputs Open VCC = Max., f = 0(2 ) ICC2 Dynamic Operating Current CS < VIL, Outputs Open VCC = Max., f = f MAX(2 ) ISB Standby Power Supply Current (TTL Level) CS > VIH, Outputs Open VCC = Max., f = f MAX(2 ) ISB1 Full Standby Power Supply Current (CMOS Level) CS > VHC, VCC = Max., VIN < VLC or V IN > VHC, f = 0 (2 ) 3090 tbl 07 NOTES: 1. All values are maximum guaranteed values. 2. f MAX = 1/t RC, only address inputs are cycling at f MAX. f = 0 means no address inputs are changing. Symbol Parameter Test Conditions IDT6168SA IDT6168LA UnitMin. Max. Min. Max. |ILI| Input Leakage Current VCC = Max., VIN = GND to VCC MIL. COM'L. ____ ____ ____ ____ 2µ A |ILO| Output Leakage Current V CC = Max., CS = V IH, VOUT = GND to V CC MIL. COM'L. ____ ____ ____ ____ 2µ A VOL Output LOW Voltage IOL = 10mA, V CC = Min. ____ 0.5 ____ 0.5 V IOL = 8mA, V CC = Min. ____ 0.4 ____ 0.4 VOH Output HIGH Voltage I OH = -4mA, V CC = Min. 2.4 ____ 2.4 ____ V 3090 tb l 09

Figure 1. AC Test Load Figure 2. AC Test Load

  1. This parameter is guaranteed by device characterization, but is not production tested.

6.42 IDT6168SA/LA CMOS Static RAM 16K (4K x 4-Bit) Military, Industrial, and Commercial Temperature Ranges Timing Waveform of Read Cycle No. 1(1, 2) Timing Waveform of Read Cycle No. 2(1, 3) NOTES: 1. WE is HIGH for Read cycle. 2. CS is LOW for Read cycle. 3. Device is continuously selected, CS is LOW. 3. Address valid prior to or coincident with CS transition LOW. 4. Transition is measured ±200mV from steady state. 3090 drw 06 ADDRESS DATA OUT tRC tAA tOH PREVIOUS DATA VALID DATA VALID tPD 3090 drw 07 DATA OUT CS tACS (4)tCLZ (3)tCHZ tPU ICC ISB SUPPLY CURRENT VCC tRC DATA OUT VALID HIGH IMPEDANCE HIGH IMPEDANCE NOTES: 1. 0° to +70°C temperature range only. 2. –55°C to +125°C temperature range only. 3. This parameter is guaranteed with AC Test load (Figure 2) by device characterization, but is not production tested. Symbol Parameter 6168SA15(1 ) 6168SA20(1 ) 6168LA20(1 ) 6168SA25 6168LA25 6168SA45(2 ) 6168LA45(2 ) Read Cycle 3090 tbl 12

CMOS Static RAM 16K (4K x 4-Bit) Military, Industrial, and Commercial Temperature Ranges NOTES: 1. 0° to +70°C temperature range only. 2. –55°C to +125°C temperature range only. 3. This parameter is guaranteed with the AC Load (Figure 2) by device characterization, but is not production tested. Symbol Parameter 6168SA15(1 ) 6168SA20(1 ) 6168LA20(1 ) 6168SA25 6168LA25 6168SA45(2 ) 6168LA45(2 ) Write Cycle 3090 tbl 13

6.42 IDT6168SA/LA CMOS Static RAM 16K (4K x 4-Bit) Military, Industrial, and Commercial Temperature Ranges Timing Waveform of Write Cycle No. 2 (CS Controlled Timing)(1,2,5) NOTES: 1. WE or CS must be HIGH during all address transitions. 2. A write occurs during the overlap of a LOW CS and a LOW WE. 3. t WR is measured from the earlier of CS or WE going HIGH to the end of the write cycle. 4. During this period, the I/O pins are in the output state and input signals should not be applied. 5. If the CS LOW transition occurs simultaneously with or after the WE LOW transition, the outputs remain in the high impedance state. 6. Transition is measured ±200mV from steady state. Timing Waveform of Write Cycle No. 1 (WE Controlled Timing)(1,2,5) CS DATA IN ADDRESS WE DATA OUT 3090 drw 08 tAW tWR tDW tWC tWP tDH tWHZ tOW (4) tAS (6) (4) (6) DATA VALID PREVIOUS DATA VALID DATA VALID (3) tCHZ (6) tWR CS 3090 drw 09 tAW tDW DATA IN ADDRESS tWC WE tCW tDH ASt t DATA VALID (3)

CMOS Static RAM 16K (4K x 4-Bit) Military, Industrial, and Commercial Temperature Ranges Ordering Information -- Commercial & Industrial XX Power XXX Speed XX Package X Process/ Temperature Range Blank I Commercial (0°C to +70°C) Industrial (-45°C to +85°C) P 300mil Plastic DIP (P20-1) (Commercial & Industrial only) 15* Commercial Only Commercial Only Commercial &Industrial SA LA Standard Power Low Power Device Type 6168IDT Speed in nanoseconds 3090 drw 10*Standard power only. XX Power XXX Speed XX Package X Process/ Temperature Range B Military (-55°C to +125°C) Compliant to MIL-STD-883, Class B D L SA LA Standard Power Low Power Device Type 6168IDT Speed in nanoseconds 3090 drw 10a*Standard power only. 300mil Ceramic DIP (D20-1) 20-pin Leadless Chip Carrier (L20-1) Ordering Information -- Military

6.42 IDT6168SA/LA CMOS Static RAM 16K (4K x 4-Bit) Military, Industrial, and Commercial Temperature Ranges CORPORATE HEADQUARTERS for SALES: for Tech Support: 2975 Stender Way 800-345-7015 or 408-727-6116 sramhelp@idt.com Santa Clara, CA 95054 fax:408-492-8674 800 544-7726, x4033 www.idt.com The IDT logo is a registered trademark of Integrated Device Technology, Inc. Datasheet Document History 11/22/99 Updated to new format Pg. 8 Added Datasheet Document History Pg. 1, 2, 3, 5, 6, 8 Added Industrial Temperature range offerings 01/07/00 Pg. 1, 2, 8 Revised package offerings 08/09/00 Not recommended for new designs 02/01/01 Removed "Not recommended for new designs"