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Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 13
Technical content
Features
- ExtremelylowlossesduetoverylowFOMRdson*QgandEoss
- Veryhighcommutationruggedness
- Easytouse/drive
- Pb-freeplating,Halogenfreemoldcompound
- Qualifiedforstandardgradeapplications
Applications
Adapter,ChargerandLighting Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate orseperatetotempolesisgenerallyrecommended. Table1KeyPerformanceParameters Parameter Value Unit VDS @ Tj,max 650 V RDS(on),max 2.1 Ω Qg,typ 6.7 nC ID,pulse 5.9 A Eoss@400V 0.76 µJ Body diode di/dt 500 A/µs Type/OrderingCode Package Marking RelatedLinks IPN60R2K1CE PG-SOT223 60S2K1 see Appendix A
600VCoolMOSªCEPowerTransistor IPN60R2K1CE Rev.2.0,2016-04-29Final Data Sheet TableofContents
600VCoolMOSªCEPowerTransistor IPN60R2K1CE Rev.2.0,2016-04-29Final Data Sheet 1Maximumratings atTj=25°C,unlessotherwisespecified Table2Maximumratings Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Continuous drain current1) ID 3.7
2.4 A TC = 25°C
TC = 100°C Pulsed drain current2) ID,pulse - - 5.9 A TC = 25°C Avalanche energy, single pulse EAS - - 11 mJ ID = 0.4A; VDD = 50V Avalanche energy, repetitive EAR - - 0.06 mJ ID = 0.4A; VDD = 50V Avalanche current, repetitive IAR - - 0.4 A - MOSFET dv/dt ruggedness dv/dt - - 50 V/ns VDS=0...480V Gate source voltage VGS -20 -30
30 V static;
AC (f>1 Hz) Power dissipation Ptot - - 5.0 W TC=25°C Operating and storage temperature Tj,Tstg -40 - 150 °C - Continuous diode forward current IS - - 1.0 A TC=25°C Diode pulse current2) IS,pulse - - 5.9 A TC = 25°C Reverse diode dv/dt3) dv/dt - - 15 V/ns VDS=0...400V,ISD<=IS,Tj=25°C Maximum diode commutation speed3) dif/dt - - 500 A/µs VDS=0...400V,ISD<=IS,Tj=25°C 2Thermalcharacteristics Table3Thermalcharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Thermal resistance, junction - solder point RthJS - - 24.7 °C/W - Thermal resistance, junction - ambient for minimal footprint RthJA - - 160 °C/W minimal footprint Thermal resistance, junction - ambient soldered on copper area RthJA - - 75 °C/W Device on 40mm*40mm*1.5 epoxy PCB FR4 with 6cm2 (one layer 70µm thick) copper area for drain connection and cooling. PCB is vertical without blown air. Soldering temperature, wavesoldering only allowed at leads Tsold - - 260 °C reflow MSL3 1) DPAK equivalent. Limited by Tj max. Maximum duty cycle D=0.5 2) Pulse width tp limited by Tj,max 3)VDClink=400V;VDS,peak<V(BR)DSS;identicallowsideandhighsideswitchwithidenticalRG
600VCoolMOSªCEPowerTransistor IPN60R2K1CE Rev.2.0,2016-04-29Final Data Sheet 3Electricalcharacteristics Table4Staticcharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Drain-source breakdown voltage V(BR)DSS 600 - - V VGS=0V,ID=0.25mA Gate threshold voltage VGS(th) 2.50 3 3.50 V VDS=VGS,ID=0.06mA Zero gate voltage drain current IDSS - µA VDS=600V,VGS=0V,Tj=25°C VDS=600V,VGS=0V,Tj=150°C Gate-source leakage curent IGSS - - 100 nA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) 1.89 4.91 2.10 - Ω VGS=10V,ID=0.8A,Tj=25°C VGS=10V,ID=0.8A,Tj=150°C Gate resistance RG - 12 - Ω f=1MHz,opendrain Table5Dynamiccharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Input capacitance Ciss - 140 - pF VGS=0V,VDS=100V,f=1MHz Output capacitance Coss - 12 - pF VGS=0V,VDS=100V,f=1MHz Effective output capacitance, energy related1) Co(er) - 8.5 - pF VGS=0V,VDS=0...480V Effective output capacitance, time related2) Co(tr) - 29.6 - pF ID=constant,VGS=0V,VDS=0...480V Turn-on delay time td(on) - 7 - ns VDD=400V,VGS=13V,ID=0.9A, RG=12.2Ω Rise time tr - 7 - ns VDD=400V,VGS=13V,ID=0.9A, RG=12.2Ω Turn-off delay time td(off) - 30 - ns VDD=400V,VGS=13V,ID=0.9A, RG=12.2Ω Fall time tf - 50 - ns VDD=400V,VGS=13V,ID=0.9A, RG=12.2Ω Table6Gatechargecharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Gate to source charge Qgs - 0.8 - nC VDD=480V,ID=0.9A,VGS=0to10V Gate to drain charge Qgd - 3.6 - nC VDD=480V,ID=0.9A,VGS=0to10V Gate charge total Qg - 6.7 - nC VDD=480V,ID=0.9A,VGS=0to10V Gate plateau voltage Vplateau - 5.4 - V VDD=480V,ID=0.9A,VGS=0to10V 1)Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to480V 2)Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfrom0to480V
600VCoolMOSªCEPowerTransistor IPN60R2K1CE Rev.2.0,2016-04-29Final Data Sheet Table7Reversediodecharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Diode forward voltage VSD - 0.9 - V VGS=0V,IF=0.9A,Tf=25°C Reverse recovery time trr - 180 - ns VR=400V,IF=0.9A,diF/dt=100A/µs Reverse recovery charge Qrr - 0.67 - µC VR=400V,IF=0.9A,diF/dt=100A/µs Peak reverse recovery current Irrm - 7.1 - A VR=400V,IF=0.9A,diF/dt=100A/µs
600VCoolMOSªCEPowerTransistor IPN60R2K1CE Rev.2.0,2016-04-29Final Data Sheet 4Electricalcharacteristicsdiagrams Diagram1:Powerdissipation TC[°C] Ptot[W] 100 125 150 Ptot=f(TC) Diagram2:Safeoperatingarea VDS[V] ID[A] 100 101 102 103 10-3 10-2 10-1 100 101 1 µs 10 µs 100 µs 1 ms 10 ms DC ID=f(VDS);TC=25°C;D=0;parameter:tp Diagram3:Safeoperatingarea VDS[V] ID[A] 100 101 102 103 10-3 10-2 10-1 100 101 1 µs 10 µs 100 µs 1 ms 10 ms DC ID=f(VDS);TC=80°C;D=0;parameter:tp Diagram4:Max.transientthermalimpedance tp[s] ZthJC[K/W] 10-5 10-4 10-3 10-2 10-1 100 101 10-2 10-1 100 101 102 0.5 0.2 0.1 0.05 0.02 0.01 single pulse ZthJC=f(tP);parameter:D=tp/T
600VCoolMOSªCEPowerTransistor IPN60R2K1CE Rev.2.0,2016-04-29Final Data Sheet Diagram5:Typ.outputcharacteristics VDS[V] ID[A] 20 V 10 V 8 V 7 V 6 V 5.5 V 5 V 4.5 V ID=f(VDS);Tj=25°C;parameter:VGS Diagram6:Typ.outputcharacteristics VDS[V] ID[A] 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 20 V 10 V 8 V 7 V 6 V 5.5 V 5 V 4.5 V ID=f(VDS);Tj=125°C;parameter:VGS Diagram7:Typ.drain-sourceon-stateresistance ID[A] RDS(on)[Ω ] 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 5 V 5.5 V 6 V 6.5 V 7 V 10 V RDS(on)=f(ID);Tj=125°C;parameter:VGS Diagram8:Drain-sourceon-stateresistance Tj[°C] RDS(on)[Ω ] -50 -25 100 125 150 98% typ RDS(on)=f(Tj);ID=0.8A;VGS=10V
600VCoolMOSªCEPowerTransistor IPN60R2K1CE Rev.2.0,2016-04-29Final Data Sheet Diagram9:Typ.transfercharacteristics VGS[V] ID[A] 150 °C 25 °C ID=f(VGS);VDS=20V;parameter:Tj Diagram10:Typ.gatecharge Qgate[nC] VGS[V] 120 V 480 V VGS=f(Qgate);ID=0.9Apulsed;parameter:VDD Diagram11:Forwardcharacteristicsofreversediode VSD[V] IF[A] 0.0 0.5 1.0 1.5 2.0 10-1 100 101 102 25 °C 125 °C IF=f(VSD);parameter:Tj Diagram12:Avalancheenergy Tj[°C] EAS[mJ] 100 125 150 EAS=f(Tj);ID=0.4A;VDD=50V
600VCoolMOSªCEPowerTransistor IPN60R2K1CE Rev.2.0,2016-04-29Final Data Sheet Diagram13:Drain-sourcebreakdownvoltage Tj[°C] VBR(DSS)[V] -75 -50 -25 100 125 150 175 520 540 560 580 600 620 640 660 680 700 VBR(DSS)=f(Tj);ID=0.25mA Diagram14:Typ.capacitances VDS[V] C[pF] 100 200 300 400 500 600 10-1 100 101 102 103 104 Ciss Coss Crss C=f(VDS);VGS=0V;f=1MHz Diagram15:Typ.Cossstoredenergy VDS[V] Eoss[µJ] 100 200 300 400 500 600 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Eoss=f(VDS)
600VCoolMOSªCEPowerTransistor IPN60R2K1CE Rev.2.0,2016-04-29Final Data Sheet 5TestCircuits Table8Diodecharacteristics Test circuit for diode characteristics Diode recovery waveform t V ,I Irrm IF VDS 10 %Irrm trr tF tS QF QS dIF / dt dIrr / dt VDS(peak) Qrr = QF +QS trr =tF +tS VDS IF VDS IF Rg1 Rg 2 Rg1 = Rg 2 Table9Switchingtimes Switching times test circuit for inductive load Switching times waveform VDS VGS td(on) td(off)tr ton tf toff 10% 90% VDS VGS Table10Unclampedinductiveload Unclamped inductive load test circuit Unclamped inductive waveform VDS V(BR)DS ID VDS VDSID
600VCoolMOSªCEPowerTransistor IPN60R2K1CE Rev.2.0,2016-04-29Final Data Sheet 6PackageOutlines 2.5 REVISION0124-02-2016ISSUE DATE EUROPEAN PROJECTION0SCALE 5mm 02.5 DOCUMENT NO.Z8B00180553MILLIMETERS 2.3 BASIC4.6 BASICe1ONL EE1eDbb2cA1A 6.303.306.70 1.522.950.240.60-DIMMIN
0.181 BASIC
0.1300.264 0.0710.004MAXINCHESMINMAX 3.70 0.146 A2 1.70 0.067 0.751.100.030 3 3 1,50 0.059 0.043 Figure1OutlinePG-SOT223,dimensionsinmm/inches
600VCoolMOSªCEPowerTransistor IPN60R2K1CE Rev.2.0,2016-04-29Final Data Sheet 7AppendixA Table11RelatedLinks
- IFXCoolMOSWebpage:www.infineon.com
- IFXDesigntools:www.infineon.com
600VCoolMOSªCEPowerTransistor IPN60R2K1CE Rev.2.0,2016-04-29Final Data Sheet RevisionHistory IPN60R2K1CE Revision:2016-04-29,Rev.2.0 Previous Revision Revision Date Subjects (major changes since last revision) 2.0 2016-04-29 Release of final version TrademarksofInfineonTechnologiesAG AURIX™,C166™,CanPAK™,CIPOS™,CoolGaN™,CoolMOS™,CoolSET™,CoolSiC™,CORECONTROL™,CROSSAVE™,DAVE™,DI-POL™,DrBlade™, EasyPIM™,EconoBRIDGE™,EconoDUAL™,EconoPACK™,EconoPIM™,EiceDRIVER™,eupec™,FCOS™,HITFET™,HybridPACK™,Infineon™, ISOFACE™,IsoPACK™,i-Wafer™,MIPAQ™,ModSTACK™,my-d™,NovalithIC™,OmniTune™,OPTIGA™,OptiMOS™,ORIGA™,POWERCODE™, PRIMARION™,PrimePACK™,PrimeSTACK™,PROFET™,PRO-SIL™,RASIC™,REAL3™,ReverSave™,SatRIC™,SIEGET™,SIPMOS™,SmartLEWIS™, SOLIDFLASH™,SPOC™,TEMPFET™,thinQ™,TRENCHSTOP™,TriCore™. TrademarksupdatedAugust2015 OtherTrademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com Publishedby InfineonTechnologiesAG 81726München,Germany ©2016InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.With respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication ofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout limitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered.