60S05 CHENYI | Alldatasheet
Document overview
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Technical content
Features
- Glass Passivated Chip
- Low Forward Voltage Drop
- High Current Capability
- High Surge Current Capability
- Low Leakage Maximum Ratings Electrical Characteristics @ 25°C Unless Otherwise Specified Average Forward Current I F(AV) 6.0A TA = 100°C Peak Forward Surge Current I FSM 200A 8.3ms, half sine Maximum Instantaneous Forward Voltage V F 1.0V IFM = 6.0A; TJ = 25°C* Maximum DC Reverse Current At Rated DC Blocking Voltage I R 5µA 100µA TJ = 25°C TJ = 100°C Typical Junction Capacitance C J 150pF Measured at 1.0MHz, V R=4.0V *Pulse test: Pulse width 300 µsec, Duty cycle 1%
- Operating Junction Temperature: -55°C to +150°C
- Storage Temperature: -55°C to +150°C Catalog Number Device Marking Maximum Reccurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage 60S05 60S05 50V 35V 50V 60S1 60S1 100V 70V 100V 60S2 60S2 200V 140V 200V 60S4 60S4 400V 280V 400V 60S6 60S6 600V 420V 600V 60S8 60S8 800V 560V 800V 60S10 60S10 1000V 700V 1000V
6 Amp Axial-Lead
A B C D D Cathode Mark DIMENSIONS INCHES MM DIM MIN MAX MIN MAX NOTE C .048 .052 1.20 1.30 Shanghai Lunsure Electronic Technology Co.,Ltd Tel:0086-21-37185008 Fax:0086-21-57152769 www.cnelectr.com