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MetalOxideSemiconductorFieldEffectTransistor CoolMOS™C6600V 600VCoolMOS™C6PowerTransistor IPx60R190C6 DataSheet Rev.2.3 Final PowerManagement&Multimarket
600V CoolMOS" C6 Power Transistor IPA60R190C6, IPB60R190C6 IPI60R190C6, IPP60R190C6 IPW60R190C6
1 Description
CoolMOS " is a revolutionary technology for high voltage power MOSFET s, designed according to the superjunction (SJ) prin ciple and pioneered by Infineon T echnologies. CoolMOS " C6 series combines the experience of the leading SJ MOSFET supplier wi th high class innovation. The offered devices provide all bene fits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switchi ng applications even more efficient, more compact, lighter, and cooler.
Features
- Extremely low losses due to very low FOM R dson*Qg and Eoss
- Very high commutation ruggedness
- Easy to use/drive
- JEDEC 1) qualified, Pb-free plating, Halogen free
Applications
PFC stages, hard switching PWM stages and resonant switching PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV, Lighting, Server, Telecom and UPS. Please note: For MOSFET paralleling the use of ferrite beads on the gate or separate totem poles is generally recommended. 1) J-STD20 and JESD22 Table 1 Key Performance Parameters Parameter Value Unit VDS @ Tj,max 650 V RDS(on),max 0.19 ! Qg,typ 63 nC ID,pulse 59 A Eoss @ 400V 5.2 µJ Body diode d i/dt 500 A/µs Type / Ordering Code Package Marking Related Links IPW60R190C6 PG-TO247 IFX C6 Product Brief IPB60R190C6 PG-TO263 IFX C6 Portfolio IPI60R190C6 PG-TO262 6R190C6 IFX CoolMOS Webpage IPP60R190C6 PG-TO220 IFX Design tools IPA60R190C6 PG-TO220 FullPAK Rev. 2.3 Page 2 2018-02-26
600V CoolMOS" C6 Power Transistor IPx60R190C6 Table of Contents Table of Contents Rev. 2.3 Page 3 2018-02-26
600V CoolMOS TM C6 Power Transistor IPx60R190C6 Maximum ratings
2 Maximum ratings
at Tj = 25 °C, unless otherwise specified. Table 2 Maximum ratings Parameter Symb ol Values Uni t Note / Test Condition Min. Typ. Max. Continuous drain current1) ID - - 2 0 . 2 A TC= 25 °C 1 2 . 8 TC= 1 0 0 ° C Pulsed drain current2) ID,pulse - - 59 A TC=25 °C Avalanche energy, single pulse EAS - - 418 mJ ID=3.4 A,VDD=50 V (see table 21) Avalanche energy, repetitive EAR - - 0.63 ID=3.4 A,VDD=50 V Avalanche current, repetitive IAR - - 3.4 A MOSFET dv/dt ruggedness dv/dt - - 50 V/ns VDS=0...480 V Gate source voltage VGS - 20 - 20 V static - 30 30 AC (f>1 Hz) Power dissipation for TO-220, TO-247, TO-262, TO-263 Ptot - - 151 W TC=25 °C Power dissipation for TO-220 FullPAK Ptot - - 34 Operating and storage temperature Tj,Tstg - 55 - 150 °C Mounting torque TO-220, TO-247 - - 60 Ncm M3 and M3.5 screws Mounting torque TO-220 FullPAK 50 M2.5 screws Continuous diode forward current IS - - 17.5 A TC=25 °C Diode pulse current2) IS,pulse - - 59 A TC=25 °C Reverse diode dv/dt3) dv/dt - - 15 V/ns VDS =0...400 V, ISD& ID, Tj=25 °C (see table 22) Maximum diode commutation speed3) dif/dt - - 500 A/µs Insulation withstand voltage TO-220 FullPAK VISO - - 2500 V VRMS, TC =25 °C, t = 1 min 1) Limited by Tj,max. Maximum duty cycle D=0.75 2) Pulse width tp limited by Tj,max 3) Identical low side and high side switch with identical RG Final Data Sheet 4 Rev. 2.2, 2014-12-02 Rev. 2.3 Page 4 2018-02-26
600V CoolMOS" C6 Power Transistor IPx60R190C6 Thermal characteristics Final Data Sheet 5 Rev. 2.2, 2014-12-02
3 Thermal characteristics
Table 3 Thermal characteristics TO-220 (IPP60R190C6),TO- 247 (IPW60R190C6),TO-262 (IPI60R190C6) Parameter Symbol Values Unit Note / Test ConditionMin. Typ. Max. Thermal resistance, junction - case RthJC - - 0.83 °C/W Thermal resistance, junction - ambient RthJA - - 62 leaded Soldering temperature, wavesoldering only allowed at leads Tsold - - 260 °C 1.6 mm (0.063 in.) from case for 10 s Table 4 Thermal characteristics TO-220 FullPAK (IPA60R190 C6) Parameter Symbol Values Unit Note / Test ConditionMin. Typ. Max. Thermal resistance, junction - case RthJC - - 3.7 °C/W Thermal resistance, junction - ambient RthJA - - 80 leaded Soldering temperature, wavesoldering only allowed at leads Tsold - - 260 °C 1.6 mm (0.063 in.) from case for 10 s Table 5 Thermal characteristics TO-263 (IPB60R190C6) Parameter Symbol Values Unit Note / Test ConditionMin. Typ. Max. Thermal resistance, junction - case RthJC - - 0.83 °C/W Thermal resistance, junction - ambient RthJA - - 62 SMD version, device on PCB, minimal footprint
35 SMD version, device
on PCB, 6cm2 cooling area1) 1) Device on 40mm*40mm*1.5mm one layer epoxy PCB FR4 with 6cm 2 copper area (thickness 70µm) for drain connection. PCB is vertical without air stream cooling. Soldering temperature, wave- & reflow soldering allowed Tsold - - 260 °C reflow MSL1 Rev. 2.3 Page 5 2018-02-26
600V CoolMOS" C6 Power Transistor IPx60R190C6
Electrical characteristics
Final Data Sheet 6 Rev. 2.2, 2014-12-02
4 Electrical characteristics
Electrical characteristics, at Tj=25 °C, unless otherwise specified. Table 6 Static characteristics Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. Drain-source breakdown voltage V(BR)DSS 600 - - V VGS=0 V, ID=0.25 mA Gate threshold voltage VGS(th) 2.5 3 3.5 VDS=VGS, ID=0.63mA Zero gate voltage drain current IDSS - - 1 µA VDS=600 V, VGS=0 V, Tj=25 °C - 10 - VDS=600 V, VGS=0 V, Tj=150 °C Gate-source leakage current IGSS - - 100 nA VGS=20 V, VDS=0 V Drain-source on-state resistance RDS(on) - 0.17 0.19 ! VGS=10 V, ID=9.5 A, Tj=25 °C - 0.44 - VGS=10 V, ID=9.5 A, Tj=150 °C Gate resistance RG - 8.5 - ! f=1 MHz, open drain Table 7 Dynamic characteristics Parameter Symbol Values Unit Note / Test ConditionMin. Typ. Max. Input capacitance Ciss - 1400 - pF VGS=0 V, VDS=100 V, f=1 MHzOutput capacitance Coss - 85 - Effective output capacitance, energy related 1) 1) Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% V (BR)DSS Co(er) - 56 - VGS=0 V, VDS=0...480 V Effective output capacitance, time related2) 2) Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% V (BR)DSS Co(tr) - 266 - ID=constant, VGS=0 V VDS=0...480V Turn-on delay time td(on) - 15 - ns VDD=400 V, VGS=13 V, ID=9.5A, RG= 3.4! (see table 20) Rise time tr - 11 - Turn-off delay time td(off) - 110 - Fall time tf - 9 - Rev. 2.3 Page 6 2018-02-26
600V CoolMOS" C6 Power Transistor IPx60R190C6 Final Data Sheet 7 Rev. 2.2, 2014-12-02 Table 8 Gate charge characteristics Parameter Symbol Values Unit Note / Test ConditionMin. Typ. Max. Gate to source charge Qgs - 7.6 - nC VDD=480 V, ID=9.5A, VGS=0 to 10 VGate to drain charge Qgd - 32 - Gate charge total Qg - 63 - Gate plateau voltage Vplateau - 5.4 - V Table 9 Reverse diode characteristics Parameter Symbol Values Unit Note / Test ConditionMin. Typ. Max. Diode forward voltage VSD - 0.9 - V VGS=0 V, IF=9.5A, Tj=25 °C Reverse recovery time trr - 430 - ns VR=400 V, IF=9.5A, diF/dt=100 A/µs (see table 22) Reverse recovery charge Qrr - 6.9 - µC Peak reverse recovery current Irrm - 30 - A Rev. 2.3 Page 7 2018-02-26
600V CoolMOS" C6 Power Transistor IPx60R190C6 Electrical characteristics diagrams Final Data Sheet 8 Rev. 2.2, 2014-12-02
5 Electrical characteristics diagrams
TO-220, TO-247, TO-262, TO-263 Power dissipation TO-220 FullPAK Ptot = f(TC) Ptot = f(TC) Table 11 Max. transient thermal impedance TO-220, TO-247, TO-262, TO-263 Max. transient thermal impedance TO-220 FullPAK Z(thJC)=f(tp); parameter: D=t p/T Z(thJC)=f(tp); parameter: D=t p/T Rev. 2.3 Page 8 2018-02-26
600V CoolMOS" C6 Power Transistor IPx60R190C6 Electrical characteristics diagrams Final Data Sheet 9 Rev. 2.2, 2014-12-02 Table 12 Safe operating area TC=25 °C TO-220, TO-247, TO-262, TO-263 Safe operating area TC=25 °C TO-220 FullPAK ID=f(VDS); TC=25 °C; D=0; parameter tp ID=f(VDS); TC=25 °C; D=0; parameter tp Table 13 Safe operating area TC=80 °C TO-220, TO-247, TO-262, TO-263 Safe operating area TC=80 °C TO-220 FullPAK ID=f(VDS); TC=80 °C; D=0; parameter tp ID=f(VDS); TC=80 °C; D=0; parameter tp Rev. 2.3 Page 9 2018-02-26
600V CoolMOS" C6 Power Transistor IPx60R190C6 Electrical characteristics diagrams Final Data Sheet 10 Rev. 2.2, 2014-12-02 Table 14 Typ. output characteristics TC=25 °C Typ. output characteristics Tj=125 °C ID=f(VDS); Tj=25 °C; parameter: VGS ID=f(VDS); Tj=125 °C; parameter: VGS Table 15 Typ. drain-source on-state resistance Drain-source on-st ate resistance RDS(on)=f(ID); Tj=125 °C; parameter: VGS RDS(on)=f(Tj); ID=9.5 A; VGS=10 V Rev. 2.3 Page 10 2018-02-26
600V CoolMOS" C6 Power Transistor IPx60R190C6 Electrical characteristics diagrams Final Data Sheet 11 Rev. 2.2, 2014-12-02 Table 16 Typ. transfer characteristics Typ. gate charge ID=f(VGS); VDS=20V VGS=f(Qgate), ID=9.5A pulsed Table 17 Avalanche energy Drain-source breakdown voltage EAS=f(Tj); ID=3.4 A; VDD=50 V VBR(DSS)=f(Tj); ID=0.25 mA Rev. 2.3 Page 11 2018-02-26
600V CoolMOS" C6 Power Transistor IPx60R190C6 Electrical characteristics diagrams Final Data Sheet 12 Rev. 2.2, 2014-12-02 Table 18 Typ. capacitances Typ. Coss stored energy C=f(VDS); VGS=0 V; f=1 MHz EOSS=f(VDS) Table 19 Forward characteristics of reverse diode IF=f(VSD); parameter: Tj Rev. 2.3 Page 12 2018-02-26
600V CoolMOS" C6 Power Transistor IPx60R190C6 Test circuits Final Data Sheet 13 Rev. 2.2, 2014-12-02
6 Test circuits
Table 20 Switching times test circuit and waveform for induc tive load Switching times test circuit for inductive load Switching t ime waveform Table 21 Unclamped inductive load test circuit and waveform Unclamped inductive load test circuit Unclamped inductive waveform Table 22 Test circuit and waveform for diode characteristic s Test circuit for diode characteristics Diode recovery wave form VD S VGS VD S VGS td( on ) td ( off )tr ton tf toff 10% 90% VDSID VDS VD V(BR)DS ID VDS VDS ID RG1 RG2 RG1 = RG2 /# $ #/ $00 %$! '$! --, --, $ --, --," .$ $ ) #/#/ 00 $ 00$ $ . $)( " (00! ! . )" ! Rev. 2.3 Page 13 2018-02-26
600V CoolMOS" C6 Power Transistor IPx60R190C6 Package outlines Final Data Sheet 14 Rev. 2.2, 2014-12-02
7 Package outlines
Figure 1 Outlines TO-247, dimensions in mm/inches Rev. 2.3 Page 14 2018-02-26
600V CoolMOS" C6 Power Transistor IPx60R190C6 Package outlines Final Data Sheet 15 Rev. 2.2, 2014-12-02 Figure 2 Outlines TO-220, dimensions in mm/inches Rev. 2.3 Page 15 2018-02-26
6**M =^^[FGKm =6 H^fTa LaP]bXbc^a CHx6*J190=6 JTe( ,(,& ,*+.' 12'02>X]P[ <PcP KWTTc /45<487 @DC=;?7B Rev. 2.3 Page 16 2018-02-26 DIMENSIONS MIN. MAX. H b D c E e L Q øP A 2.862.42 2.54 28.70 0.95 15.67 0.40 0.65 10.00 2.83 3.15 3.00 12.78 8.97 29.75 0.90 0.63 1.51 16.15 3.50 3.30 3.45 13.75 10.65 9.83 MILLIMETERS 4.50 2.34 4.90 2.85 b1 0.95 1.38 b4 0.65 1.51 b3 0.65 1.38 1 SCALE Z8B00003319 REVISION ISSUE DATE EUROPEAN PROJECTION 27.01.2017 0 5mm DOCUMENT NO. 5:1 2 3 4 1 2 3 Figure 3 Outline PGTO220 FullPAK dimensions in mm
600V CoolMOS" C6 Power Transistor IPx60R190C6 Package outlines Final Data Sheet 17 Rev. 2.2, 2014-12-02 Figure 4 Outlines TO-262, dimensions in mm/inches Rev. 2.3 Page 17 2018-02-26
)$$4 +AA>./2H +) 0AF8B 3B5@C<CDAB -0G)$1%*$+) 056=598 AED><@8C Rev. 2.2, 2014-12-02 Rev. 2.3 Page 18 2018-02-26
600VCoolMOSªC6PowerTransistor IPx60R190C6 Rev.2.3,2018-03-04 RevisionHistory IPx60R190C6 Revision:2018-03-04,Rev.2.3 Previous Revision Revision Date Subjects (major changes since last revision) 2.0 2011-06-08 Release of final data sheet 2.1 2011-09-14 - 2.2 2015-02-09 PG-TO220 FullPAK package outline update (creation:2014-12-02) 2.3 2018-03-04 Outline PG-TO220 FullPAK update TrademarksofInfineonTechnologiesAG AURIX™,C166™,CanPAK™,CIPOS™,CoolGaN™,CoolMOS™,CoolSET™,CoolSiC™,CORECONTROL™,CROSSAVE™,DAVE™,DI-POL™,DrBlade™, EasyPIM™,EconoBRIDGE™,EconoDUAL™,EconoPACK™,EconoPIM™,EiceDRIVER™,eupec™,FCOS™,HITFET™,HybridPACK™,Infineon™, ISOFACE™,IsoPACK™,i-Wafer™,MIPAQ™,ModSTACK™,my-d™,NovalithIC™,OmniTune™,OPTIGA™,OptiMOS™,ORIGA™,POWERCODE™, PRIMARION™,PrimePACK™,PrimeSTACK™,PROFET™,PRO-SIL™,RASIC™,REAL3™,ReverSave™,SatRIC™,SIEGET™,SIPMOS™,SmartLEWIS™, SOLIDFLASH™,SPOC™,TEMPFET™,thinQ™,TRENCHSTOP™,TriCore™. TrademarksupdatedAugust2015 OtherTrademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com Publishedby InfineonTechnologiesAG 81726München,Germany ©2018InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics (“Beschaffenheitsgarantie”). Withrespecttoanyexamples,hintsoranytypicalvaluesstatedhereinand/oranyinformationregardingtheapplicationofthe product,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithoutlimitation warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Inaddition,anyinformationgiveninthisdocumentissubjecttocustomer’scompliancewithitsobligationsstatedinthis documentandanyapplicablelegalrequirements,normsandstandardsconcerningcustomer’sproductsandanyuseofthe productofInfineonTechnologiesincustomer’sapplications. Thedatacontainedinthisdocumentisexclusivelyintendedfortechnicallytrainedstaff.Itistheresponsibilityofcustomer’s technicaldepartmentstoevaluatethesuitabilityoftheproductfortheintendedapplicationandthecompletenessoftheproduct informationgiveninthisdocumentwithrespecttosuchapplication. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered.