60N75-TA3-T

60N75 UTC | Alldatasheet

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UNISONIC TECHNOLOGIES CO., LTD 60N75 Power MOSFET w w w . u n i s o n i c . c o m . t w 1 of 8 Copyright © 2007 Unisonic Technologies Co., Ltd. QW-R502-112.A 60Amps, 75Volts N-CHANNEL POWER MOSTFET „ DESCRIPTION The UTC 60N75 is n-channel enhancement mode power field effect transistors with stable off-state characteristics, fast switching speed, low thermal resistance, usually used at telecom and computer application. „ FEATURES * RDS(ON) = 16mΩ @VGS = 10 V * Ultra low gate charge ( typical 90 nC ) * Low reverse transfer Capacitance ( C RSS = typical 80pF ) * Fast switching capability * Avalanche energy Specified * Improved dv/dt capability, high ruggedness „ SYMBOL 1.Gate 3.Source 2.Drain *Pb-free plating product number: 60N75L „ ORDERING INFORMATION Ordering Number Pin Assignment Normal Lead Free Plating Package 1 2 3 Packing 60N75-TA3-T 60N75L-TA3-T TO-220 G D S Tube 60N75-TF3-T 60N75L-TF3-T TO-220F G D S Tube 60N75-TM3-T 60N75L-TM3-T TO-251 G D S Tube 60N75-TN3-R 60N75L-TN3-R TO-252 G D S Tape Reel 60N75-TN3-T 60N75L-TN3-T TO-252 G D S Tube Note: Pin Assignment: G: Gate D: Drain S: Source

UNISONIC TECHNOLOGIES CO., LTD 2 of 8 www.unisonic.com.tw Q W - R 5 0 2 - 1 1 2 . A „ ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATINGS UNIT Drain to Source Voltage V DSS 75 V TC = 25Ċ 60 A Continuous Drain Current TC = 100Ċ ID 56 A Drain Current Pulsed (Note 1) I DM 300 A Gate to Source Voltage V GS 20 V Single Pulsed(Note 2) E AS 900 mJ Avalanche Energy Repetitive (Note 1) E AR 300 mJ Peak Diode Recovery dv/dt (Note 3) dv/dt 15 V/ns TC = 25Ċ 220 W Total Power Dissipation Derating above 25Ċ PD 1.4 W/ Ċ Junction Temperature T J +150 Ċ Operating Temperature T OPR -55 ~ +150 Ċ Storage Temperature T STG -55 ~ +150 Ċ Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. „ THERMAL DATA PARAMETER SYMBOL MIN TYP MAX UNIT Thermal Resistance Junction-Ambient θJA 62.5 Ċ/W Thermal Resistance Junction-Case θJC 0.8 Ċ/W „ ELECTRICAL CHARACTERISTICS (TC = 25Ċ, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BV DSS V GS = 0 V, ID = 250 µA 75 V Breakdown Voltage Temperature Coefficient BV¶ DSS/¶TJ ID = 1mA, Referenced to 25Ċ 0.08 V/ Ċ VDS = 75 V, VGS = 0 V 20 µA Drain-Source Leakage Current I DSS VDS = 75 V, VGS = 0 V, TJ = 150Ċ 250 µA Forward V GS = 20V, VDS = 0 V 100 nAGate-Source Leakage Current Reverse IGSS VGS = -20V, VDS = 0 V -100 nA ON CHARACTERISTICS Gate Threshold Voltage V GS(TH) V DS = VGS, ID = 250 µA 2.0 4.0 V Static Drain-Source On-Resistance R DS(ON) V GS = 10 V, ID = 48 A 16 m Ω DYNAMIC CHARACTERISTICS Input Capacitance C ISS 3300 pF Output Capacitance C OSS 530 pF Reverse Transfer Capacitance C RSS VGS = 0 V, VDS = 25 V f = 1MHz 80 pF SWITCHING CHARACTERISTICS Turn-On Delay Time t D(ON) 12 ns Turn-On Rise Time t R 79 ns Turn-Off Delay Time t D(OFF) 80 ns Turn-Off Fall Time t F VDD = 38V, ID =48A, VGS=10V (Note 4, 5) 52 ns Total Gate Charge Q G 90 140 nC Gate-Source Charge Q GS 20 35 nC Gate-Drain Charge (Miller Charge) Q GD VDS = 60V, ID = 48A, VGS = 10 V (Note 4, 5) 30 45 nC

UNISONIC TECHNOLOGIES CO., LTD 3 of 8 www.unisonic.com.tw Q W - R 5 0 2 - 1 1 2 . A „ ELECTRICAL CHARACTERISTICS(Cont.) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Diode Forward Voltage V SD I S = 48A, VGS = 0 V 1.4 V Continuous Source Current I S 75 Pulsed Source Current I SM 300 A Reverse Recovery Time t RR 90 ns Reverse Recovery Charge Q RR IS = 48A, VGS = 0 V dIF / dt = 100 A/µs 300 µC Note 1. Repeativity rating: pulse width limited by junction temperature 2. L=0.24mH, I AS=48A, VDD = 50V, RG=20Ω, Starting TJ=25Ċ 3. ISD≤48A, di/dt≤300A/µs, VDD≤BVDSS, Starting TJ=25 Ċ 4. Pulse Test: Pulse Width≤300µs, Duty Cycle≤2% 5. Essentially independent of operating temperature.

UNISONIC TECHNOLOGIES CO., LTD 4 of 8 www.unisonic.com.tw Q W - R 5 0 2 - 1 1 2 . A „ TEST CIRCUITS AND WAVEFORMS Same Type as D.U.T. L VDDDriver VGS RG VDS D.U.T. + * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test P. W. PeriodD=VGS (Driver) ISD (D.U.T.) IFM, Body Diode Forward Current di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt Body Diode Forward Voltage Drop VDD 10V VDS (D.U.T.) VGS= P.W. Period Fig. 1A Peak Diode Recovery dv/dt Test Circuit F i g . 1 B P e a k D i o d e R e c o v e r y d v / d t W a v e f o r m s

UNISONIC TECHNOLOGIES CO., LTD 5 of 8 www.unisonic.com.tw Q W - R 5 0 2 - 1 1 2 . A „ TEST CIRCUITS AND WAVEFORMS (Cont.) Fig. 2A Switching Test Circuit Fig. 2B Switching Waveforms F i g . 3 A G a t e C h a r g e T e s t C i r c u i t F i g . 3 B G a t e C h a r g e W a v e f o r m D.U.T. RG 10V VDS L VDD tp VDD tp Time BVDSS IAS ID(t) VDS(t) Fig. 4A Unclamped Inductive Switching Test Circuit Fig. 4B Unclamped Inductive Switching Waveforms

UNISONIC TECHNOLOGIES CO., LTD 6 of 8 www.unisonic.com.tw Q W - R 5 0 2 - 1 1 2 . A „ TYPICAL CHARACTERISTICS 102 101 100 101 10-1 100 Drain-Source Voltage, VDS (V) Drain Current, ID (A) On-State Characteristics 102 101 100 Gate-Source Voltage, VGS (V) Drain Current, ID (A) Transfer Characteristics 468 1 035 79 VGS Top: 15V 10V 5.5V Bottorm: 4.5V 4.5V Note: 1. V DS=25V 2. 20µs Pulse Test 150¥ 25¥ Drain-Source On-Resistance, RDS(ON) (mȤ) Reverse Drain Current, ISD (A) Capacitance (pF) Gate-to-Source Voltage, VGS (V)

UNISONIC TECHNOLOGIES CO., LTD 7 of 8 www.unisonic.com.tw Q W - R 5 0 2 - 1 1 2 . A „ TYPICAL CHARACTERISTICS(Cont.) Drain-Source Breakdown Voltage, BVDSS(Normalized) (V) Drain-Source On-Resistance, RDS(ON), (Normalized) (Ω) Drain Current , ID (A) Drain Current, ID (A) Thermal Response, ZȬJC (t)

UNISONIC TECHNOLOGIES CO., LTD 8 of 8 www.unisonic.com.tw Q W - R 5 0 2 - 1 1 2 . A UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.