DATASHEET SEARCH SITE | WWW.ALLDATASHEET.COM

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 6

Technical content

TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60N321 High Power Switching Applications The 4th Generation /Gb7/G20FRD included between emitter and collector /Gb7/G20Enhancement-mode /Gb7/G20High speed IGBT : t f = 0.25 µs (typ.) (IC = 60 A) FRD : t rr = 0.8 µs (typ.) (di/dt = −20 A/µs) /Gb7/G20Low saturation voltage: VCE (sat) = 2.3 V (typ.) (IC = 60 A) Maximum Ratings (Ta /G3d/G3d /G3d/G3d 25°C) Characteristics symbol Rating Unit Collector-Emitter Voltage VCES 1000 V Gate-Emitter Voltage VGES /Gb125 V DC I C 60 Collector Current 1 ms I CP 120 A DC I ECF 15 Emitter-Collector Forward Current 1 ms I ECFP 120 A Collector Power Dissipation (Tc /G3d 25°C) P C 170 W Junction Temperature Tj 150 °C Storage Temperature Tstg /G2d55~150 °C Screw Torque /Gbe/G20 0.8 N ･m Equivalent Circuit Unit: mm JEDEC ― JEITA ― TOSHIBA 2-21F2C Weight: 9.75 g (typ.) Emitter Collector Gate

Electrical Characteristics (Ta /G3d/G3d /G3d/G3d 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Gate Leakage Current IGES V GE /G3d /Gb125 V, VCE /G3d 0 /Gbe /Gbe /Gb1500 nA Collector Cut-off Current ICES V CE /G3d 1000 V, VGE /G3d 0 /Gbe /Gbe 1.0 mA Gate-Emitter Cut-off Voltage VGE (OFF) I C /G3d 60 mA, VCE /G3d 5 V 3.0 /Gbe 6.0 V /G20 Collector-Emitter Saturation Voltage V CE (sat) (1) I C /G3d 10 A, VGE /G3d 15 V /Gbe 1.6 2.3 V /G20 Collector-Emitter Saturation Voltage V CE (sat) (2) I C /G3d 60 A, VGE /G3d 15 V /Gbe 2.3 2.8 V /G20 Input Capacitance Cies V CE /G3d 10 V, VGE /G3d 0, f /G3d 1 MHz /Gbe 4000 /Gbe/G20pF Rise Time tr /Gbe 0.23 /Gbe Turn-on Time t on /Gbe/G200.33 /Gbe/G20 Fall Time tf /Gbe/G200.25 0.40Switching Time Turn-off Time t off /G20 /G20 /Gbe 0.70 /Gbe/G20 /G6ds Emitter-Collector Forward Voltage V ECF I EC /G3d 15 A, VGE /G3d 0 /Gbe 1.5 2.0 V Reverse Recovery Time trr I F /G3d 15 A, VGE /G3d 0, di/dt /G3d /G2d20 A//G6ds /Gbe 0.8 2.5 /G6ds Thermal Resistance R h(j-c) /Gbe /Gbe /Gbe 0.74 °C/W Thermal Resistance R h(j-c) /Gbe /Gbe /Gbe 4.0 °C/W /G2d15 V 15 V 51 /G57 600 V 10 /G57

TC /G3d 125°C Common Emitter VCE /G3d 5 V 05 10 15 20 25 6030 IC /G3d 10 A Common emitter Tc /G3d /G2d40°C Collector current I C (A) Collector-emitter voltage V CE (V) Collector-emitter voltage V CE (V) IC – VCE Collector current I C (A) Gate-emitter voltage V GE (V) VCE – VGE Collector-emitter voltage V CE (V) Gate-emitter voltage V GE (V) VCE – VGE Collector-emitter voltage V CE (V) Gate-emitter voltage V GE (V) VCE – VGE Gate-emitter voltage V GE (V) IC – VGE Case temperature Tc (°C) VCE (sat) – Tc Collector-emitter saturation voltage VCE (sat) (V) 0 5 10 15 20 25

30 IC /G3d 10 A

Tc /G3d 25°C 05 10 15 20 25 Tc /G3d 125°C /G2d40 0 40 80 120 IC /G3d 10 A Common emitter VGE /G3d 15 V 160 100 0 1 2 3 4 5 VGE /G3d 7 V 15 V 20 V 25 V 10 V Common emitter Tc /G3d 25°C

Collector current I C (A) Capacitance C (pF) Gate charge Q G ( n C ) VCE, VGE – QG Collector-emitter voltage V CE (V) ( /Gb410 V) Gate-emitter voltage V GE (V) Gate resistance R G ( /G57) Switching time – RG Switching time ( /G6ds) Collector current I C (A) Switching Time – IC Switching time ( /G6ds) Collector-emitter voltage V CE (V) C – V CE Collector- emitter voltage V CE (V) Safe Operating Area Collector-emitter voltage V CE (V) Reverse Bias SOA Collector current I C (A) VCE /G3d 150 V Common emitter RL /G3d 2.5 /G57 TC /G3d 25°C 100 V 50 V 50 100 150 200 250 300 350 400 0.1 10 100 1000 Common emitter VCC /G3d 600 V IC /G3d 60 A VGG /G3d /Gb115 V TC /G3d 25°C toff ton tr tf 0.1 20 60 80 Common emitter VCC /G3d 600 V RG /G3d 51 /G57 VGG /G3d /Gb115 V TC /G3d 25°C toff ton tr tf 100 1000 10000 10 100 1000 10000 Coes Cres Cies Common emitter VGE /G3d 0 V /G3d 1 MHz TC /G3d 25°C 30 100 1000 3000 300 100 300 Tj /G3c/G3d125°C VGE /G3d /Gb115 V RG /G3d 10 /G57 IC max (Pulsed)* IC max (Continuous) 10 /G6ds* 1 ms* 10 ms* DC Operation 100 /G6ds* * Single non-repetitive pulse Tc /G3d 25°C curves must be derated linearly with increase in emperature. 100 1000 10 100 1000 3000

Pulse width t w (s) Rth (t) – tw Transient thermal impedance Rth (t) (°C/W) Collector-emitter forward voltage V ECF (V) Reverse recovery time t rr ( /G6ds) Emitter-collector forward current I ECF (A) Irr, trr – IECF Peak reverse recovery current I rr (A) Reverse recovery time t rr ( /G6ds) di/dt (A/ /G6ds) 100 Tc /G3d 125°C /G2d40 0 20 40 60 80 100 Common emitter di/dt /G3d /G2d20 A//G6ds Tc /G3d 25°C 0.4 0.8 1.2 1.6 Irr trr Irr, trr – di/dt IECF – VECF Emitter-collector forward current IECF (A) Common collector 10/G2d3 10/G2d5 10/G2d2 10/G2d1 100 101 102 103 10/G2d4 10 /G2d3 10 /G2d2 10 /G2d1 10 0 10 1 10 2 IGBT Stage Diode Stage Tc /G3d 25°C Peak reverse recovery current I rr (A) 0 50 100 150 200 250 Common emitter IECF /G3d 60 A Tc /G3d 25°C 0.2 0.4 0.6 0.8 trr

/Gb7/G20TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. /Gb7/G20The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. /Gb7/G20The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. /Gb7/G20The information contained herein is subject to change without notice. 000707EAARESTRICTIONS ON PRODUCT USE