60LQ045 IRF | Alldatasheet

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60A, 30V 60LQ045 Major Ratings and Characteristics Description/Features 03/20/02 CASE STYLE Case Outline and Dimensions - SMD-1 www.irf.com 1 CATHODE ANODE ANODE HIGH EFFICIENCY SERIES The 60LQ045 Schottky rectifier has been expressly designed to meet the rigorous requirements of hi-rel environments. It is packaged in the hermetic surface mount SMD-1 ceramic package. The device's forward voltage drop and reverse leakage current are optimized for the lowest power loss and the highest circuit efficiency for typical high frequency switching power supplies and resonant power convertors. Full MIL-PRF-19500 quality conformance testing is availble on control drawings to TX, TXV and S quality levels.

  • Hermetically Sealed  Low Forward Voltage Drop  High Frequency Operation  Guard Ring for Enhanced Ruggedness and Long term Reliability  Surface Mount  Lightweight Characteristics 60LQ045 Units IF(AV) 60 A VRRM 45 V IFSM @ tp = 8.3ms half-sine 400 A VF @ 60Apk, TJ =125°C 0.6 V TJ, Tstg Operating and storage -55 to 150 °C PD-20504C

2 www.irf.com Part number 60LQ045 VR Max. DC Reverse Voltage (V) VRWM Max. Working Peak Reverse Voltage (V) Voltage Ratings Parameters Limits Units Conditions IF(AV) Max. Average Forward Current 60 A 50% duty cycle @ T C = 105°C, square waveform See Fig. 5 IFSM Max. Peak One Cycle Non - Repetitive 400 A @ tp = 8.3 ms half-sine Surge Current Absolute Maximum Ratings Parameters Limits Units Conditions TJ Max.Junction Temperature Range -55 to 150 °C Tstg Max. Storage Temperature Range -55 to 150 °C R thJC Max. Thermal Resistance, Junction 1.0 °C/W DC operation See Fig. 4 to Case wt Weight (Typical) 2.6 g Die Size 200X200 mils Case Style SMD-1 Thermal-Mechanical Specifications /G81 Pulse Width < 300µs, Duty Cycle < 2% /G82 Pins 2 and 3 externally tied together Electrical Specifications Parameters Limits Units Conditions VFM Max. Forward Voltage Drop 0.68 V @ 60A T J = 25°C /G82 See Fig. 1 /G81 0.82 V @ 120A

0.6 V @ 60A T J = 125°C /G82

0.74 V @ 120A

IRM Max. Reverse Leakage Current 0.8 mA TJ = 25°C VR = rated VR /G82 See Fig. 2 /G81 45 mA TJ = 125°C CT Max. Junction Capacitance 2900 pF V R = 5VDC , ( 1MHz, 25°C ) /G82 L S Typical Series Inductance 5.9 nH Measured from center of cathode pad to center of anode pad

www.irf.com 3 Fig. 2 - Typical Values of Reverse Current Vs. Reverse Voltage Fig. 3 - Typical Junction Capacitance Vs. Reverse Voltage Fig. 1 - Max. Forward Voltage Drop Characteristics 0.001 0.01 0.1 100 0 1 02 03 04 05 0 A 25 °C 100 °C 125 °C T = 150°CJ 1000 10000 0 1 02 03 04 05 0 T = 25°CJ Reverse Volta ge - V (V )R TJunction Capacitance - C (pF) A Reverse Voltage - VR (V) Reverse Current - IR ( mA ) Forward Voltage Drop - VF (V) 100 1000 Instantaneous Forward Current - I F (A) Tj = 125°C Tj = 25°C

4 www.irf.com Fig. 5 - Max. Allowable Case Temperature Vs. Average Forward Current Fig. 4 - Max. Thermal Impedance ZthJC Characteristics IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 03/02 0.01 0.1 /G20 Notes: 1. Duty factor D =t / t 2. Peak T= P x Z + T 1 2 J DM thJC C /G20 P t t DM t , Rectangular Pulse Duration (sec) Thermal Response (Z ) thJC 0.01 0.02 0.05 0.10 0.20 D = 0.50 /G20 SINGLE PULSE (THERMAL RESPONSE) 0 20 40 60 80 100 Average Forward Current - IF(AV) (A) 100 120 140 160 180 Allowable Case Temprature - ( °C) 60LQ045 R thJC = 1.0°C/W DC