60EPU06PBF IRF | Alldatasheet

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Ultrafast Soft Recovery Diode VR Cathode to Anode Voltage 600 V IF(AV) Continuous Forward Current, TC = 116°C 60 A IFSM Single Pulse Forward Current, TC = 25°C 600 IFRM c Maximum Repetitive Forward Current 120 TJ, TSTG Operating Junction and Storage Temperatures - 55 to 175 °C Parameters Max Units

  • Ultrafast Recovery
  • 175°C Operating Junction Temperature
  • Lead-Free ("PbF" suffix) Benefits
  • Reduced RFI and EMI
  • Higher Frequency Operation
  • Reduced Snubbing
  • Reduced Parts Count These diodes are optimized to reduce losses and EMI/ RFI in high frequency power conditioning systems. The softness of the recovery eliminates the need for a snubber in most applications. These devices are ideally suited for HF welding, power converters and other applications where switching losses are not significant portion of the total losses. c Square Wave, 20kHz Bulletin PD-21099 11/05 Case Styles TO-247AC (Modified) 60EPU06PbF 60APU06PbF TO-247AC CATHODE ANODE CATHODE TO BASE ANODE ANODE CATHODE TO BASE www.irf.com

www.irf.com trr Reverse Recovery Time - 34 45 ns I F = 1A, diF/dt = 200A/µs, VR = 30V -8 1- T J = 25°C - 164 - T J = 125°C IRRM Peak Recovery Current - 7.4 - A T J = 25°C - 17.0 - T J = 125°C Qrr Reverse Recovery Charge - 300 - nC T J = 25°C - 1394 - T J = 125°C Dynamic Recovery Characteristics @ TJ = 25°C (unless otherwise specified) IF = 60A VR = 200V diF /dt = 200A/µs Parameters Min Typ Max Units Test Conditions Parameters Min Typ Max Units RthJC Thermal Resistance, Junction to Case 0.63 K/W RthCS d Thermal Resistance, Case to Heatsink 0.2 Wt Weight 5.5 g 0.2 (oz) T Mounting Torque 1.2 2.4 N * m 10 20 lbf.in Marking Device 60EPU06, 60APU06 Thermal - Mechanical Characteristics d Mounting Surface, Flat, Smooth and Greased VBR, Vr Breakdown Voltage, 600 - - V I R = 100µA Blocking Voltage VF Forward Voltage - 1.35 1.68 V I F = 60A - 1.20 1.42 V I F = 60A, TJ = 125°C - 1.11 1.30 V I F = 60A, TJ = 175°C IR Reverse Leakage Current - - 50 µA V R = VR Rated - - 500 µA T J = 150°C, VR = VR Rated CT Junction Capacitance - 39 - pF V R = 600V Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameters Min Typ Max Units Test Conditions

www.irf.com Fig. 2 - Typical Values Of Reverse Current Vs. Reverse Voltage Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 3 - Typical Junction Capacitance Vs. Reverse Voltage Forward Voltage Drop - VFM (V) Instantaneous Forward Current - I F (A) Reverse Voltage - VR (V) Reverse Voltage - VR (V) Junction Capacitance - C T (pF) Fig. 4 - Max. Thermal Impedance Z thJC Characteristics t1, Rectangular Pulse Duration (Seconds) Thermal Impedance Z thJC (°C/W) Reverse Current - I R (µA) 100 1000 0 100 200 300 400 500 60 0 T = 25˚CJ 100 1000 00 . 511 . 522 . 53 T = 175˚C T = 125˚C T = 25˚C J J J 0.001 0.01 0.1 100 1000 0 100 200 300 400 500 600 125˚C Tj = 175˚C 25˚C 1E-05 1E-04 1E-03 1E-02 1E-01 1E+00 1E+01 1E+02 0.01 0.1

www.irf.com Fig. 5 - Max. Allowable Case Temperature Vs. Average Forward Current Fig. 6 - Forward Power Loss Characteristics Average Power Loss ( Watts ) Average Forward Current - IF(AV) (A) Allowable Case Temperature (°C) Average Forward Current - IF(AV) (A) (3) Formula used: TC = TJ - (Pd + PdREV) x RthJC ; Pd = Forward Power Loss = IF(AV) x VFM @ (IF(AV) / D) (see Fig. 6); PdREV = Inverse Power Loss = VR1 x IR (1 - D); IR @ VR1 = 80% rated VR 100 120 140 160 180 0 2 04 06 08 0 1 0 DC Square wave (D = 0.50) 80% Rated Vr applied see note (3) 100 120 140 0 2 04 06 08 0 1 0 0 DC RMS Limit D = 0.01 D = 0.02 D = 0.05 D = 0.10 D = 0.20 D = 0.50 dIf/ dt (A/µs) Qrr (nC) Fig. 7 - Typical Stored Charge vs. dif/dt dIf/ dt (A/µs) trr (ns) 10 100 1000 500 1000 1500 2000 2500 3000 Tj = 125°C Tj = 25°C If = 30A If = 60A 10 100 1000 100 150 200 250 300 Tj = 125°C Tj = 25°C If = 30A If = 60A Fig.87 - Typical Stored Charge vs. dif/dt

www.irf.com IRFP250 D.U.T. L = 70µH V = 200VR 0.01 Ω G D S dif/dt ADJUST Fig. 9 - Reverse Recovery Parameter Test Circuit Reverse Recovery Circuit di F /dt Fig. 10 - Reverse Recovery Waveform and Definitions ta tb trr Qrr IF IRRM I RRM0.5 di(rec)M/dt

0.75 IRRM

  1. Qrr - Area under curve defined by t rr and IRRM 5. di (rec) M / dt - Peak rate of change of current during t b portion of t rr 1. diF/dt - Rate of change of current through zero crossing 2. IRRM - Peak reverse recovery current 3. trr - Reverse recovery time measured from zero crossing point of negative going I F to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current Q rr = t rr x I RRM

www.irf.com ANODE BASE COMMON CATHODE CATHODE ANODE ANODE BASE COMMON CATHODE 15.90 (0.626) 15.30 (0.602) 14.20 (0.559) 14.80 ( 0.583) 3.70 (0.145) 4.30 (0.170) 5.30 ( 0.208) 5.70 (0.225) 5.50 ( 0.217) 4.50 (0.177) (2 PLCS.) 3.55 (0.139) 3.65 (0.144) 2.20 (0.087) MAX. 1.00 (0.039) 1.40 (0.056) 0.40 (0.213) 0.80 ( 0.032) 4.70 ( 0.185) 5.30 (0.209) 1.5 ( 0.059) 2.5 ( 0.098) 2.40 (0.095) MAX. 10.86 (0.427) 10.94 ( 0.430) 20.30 (0.800) 19.70 (0.775) DIA. 12 3 15.90 (0.626) 15.30 (0.602) 14.20 (0.559) 14.80 ( 0.583) 3.70 (0.145) 4.30 (0.170) 5.30 ( 0.208) 5.70 (0.225) 5.50 ( 0.217) 4.50 (0.177) (2 PLCS.) 3.55 (0.139) 3.65 (0.144) 2.20 (0.087) MAX. 1.00 (0.039) 1.40 (0.056) 0.40 (0.213) 0.80 ( 0.032) 4.70 ( 0.185) 5.30 (0.209) 1.5 ( 0.059) 2.5 ( 0.098) 2.40 (0.095) MAX. 10.86 (0.427) 10.94 (0.430) 20.30 (0.800) 19.70 (0.775) 1 3 DIA. Outline Table 60EPU06PbF Dimensions in millimeters and inches 60APU06PbF

www.irf.com RECTIFIER INTERNATIONAL ASSEMBLY LOT CODE EXAMPLE: IN ASSEMBLY LINE "H" THIS IS A 60APU06 ASSEMBLED ON WW 35, 2004 WITH ASSEMBLY LOT CODE 5657 LOGO P = LEAD-FREE YEAR 4 = 2004 PART NUMBER LINE H WEEK 35 60APU06 P435H 56 57 DATE CODE RECTIFIER INTERNATIONAL ASSEMBLY LOT CODEIN ASSEMBLY LINE "H" WITH ASSEMBLY LOT CODE 5657 LOGO P = LEAD-FREE PART NUMBER LINE H WEEK 35 56 57 DATE CODE EXAMPLE: THIS IS A 60EPU06 ASSEMBLED ON WW 35, 2003 60EPU06 P335H YEAR 3 = 2003 Marking Information Ordering Information Table

60 E P U 06 PbF

1 - Current Rating (60 = 60A) 2 - Circuit Configuration: E = Single Diode A = Single Diode, 3 pins P = TO-247AC (Modified) 4 - Type of Silicon: U = UltraFast Recovery 5 - Voltage Rating (06 = 600V) 6 - y none = Standard Production y PbF = Lead-Free

www.irf.com IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7309 Visit us at www.irf.com for sales contact information. 11/05 Data and specifications subject to change without notice. This product has been designed and qualified for Industrial Level and Lead-Free. Qualification Standards can be found on IR's Web site.