APTLGT400A608G MICROSEMI | Alldatasheet

Document overview

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Technical content

Features

  • Non Punch Through (NPT) FAST IGBT - Low voltage drop - Low tail current - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA & SCSOA rated
  • Integrated Fail Safe IGBT Protection (Driver) - Top Bottom input signals Interlock - Isolated DC/DC Converter
  • Low stray inductance
  • M5 power connectors
  • High level of integration Benefits
  • Outstanding performance at high frequency operation
  • Stable temperature behavior
  • Very rugged
  • Direct mounting to heatsink (isolated package)
  • Low junction to case thermal resistance
  • Very high noise immunity (common mode rejection > 25kV/µs)
  • Galvanic Isolation: 3750V for the optocoupler 2500V for the transformer
  • 5V logic level with Schmitt-trigger Input
  • Single VDD=5V supply required
  • Secondary auxiliary power supplies internally generated (15V, -6V)
  • Optocoupler qualified to AEC-Q100 test quidelines
  • RoHS compliant

APTLGT400A608G – Rev 0 February, 2011 www.microsemi.com 2-6 All ratings @ Tj = 25°C unless otherwise specified 1. Inverter Power Module Absolute maximum ratings Symbol Parameter Max ratings Unit VCES Collector - Emitter Breakdown Voltage 600 V TC = 25°C 600 IC Continuous Collector Current TC = 80°C 400 ICM Pulsed Collector Current T C = 25°C 800 A PD Maximum Power Dissipation T C = 25°C 1250 W RBSOA Reverse Bias Safe Operating Area T j = 150°C 800A@550V

Electrical Characteristics

Symbol Characteristic Test Conditions Min Typ Max Unit Tj = 25°C 0.3 ICES Zero Gate Voltage Collector Current VGE = 0V VCE = 600V Tj = 150°C 1 mA Tj = 25°C 1.5 1.9 VCE(sat) Collector Emitter Saturation Voltage VDD = VIN = 5V IC = 400A Tj = 150°C 1.7 V Dynamic Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit Cies Input Capacitance 24 Coes Output Capacitance 1.6 Cres Reverse Transfer Capacitance VGE = 0V VCE = 25V f = 1MHz 0.8 nF Tr Rise Time 45 Tf Fall Time Inductive Switching (25°C) VDD = VIN = 5V VBus = 300V ; IC = 400A 55 ns Tr Rise Time 25 Tf Fall Time 70 ns Eon Turn-on Switching Energy 3.5 Eoff Turn-off Switching Energy Inductive Switching (125°C) VDD = VIN = 5V VBus = 300V IC = 400A 14 mJ Isc Short Circuit data VDD = VIN = 5V; VBus =360V tp ≤ 6µs ; Tj = 150°C 2000 A RthJC Junction to Case thermal resistance 0.12 °C/W

APTLGT400A608G – Rev 0 February, 2011 www.microsemi.com 3-6 Reverse diode ratings and characteristics Symbol Characteristic Test Conditions Min Typ Max Unit VRRM Maximum Peak Repetitive Reverse Voltage 600 V Tj = 25°C 350 IRM Maximum Reverse Leakage Current V R=600V Tj = 150°C 500 µA IF DC Forward Current Tc = 80°C 400 A Tj = 25°C 1.6 2 VF Diode Forward Voltage I F = 400A Tj = 150°C 1.5 V Tj = 25°C 125 trr Reverse Recovery Time Tj = 150°C 220 ns Tj = 25°C 19 Qrr Reverse Recovery Charge Tj = 150°C 40 µC Tj = 25°C 4.4 Err Reverse Recovery Energy IF = 400A VR = 300V di/dt =4800A/µs Tj = 150°C 9.6 mJ RthJC Junction to Case thermal resistance 0.20 °C/W 2. Driver Absolute maximum ratings Symbol Parameter Max ratings Unit VDD Supply Voltage 5.5 VINi Input signal voltage i=L, H 5.5 V VINi = 0V, i =L & H 0.35 IVDDmax Maximum Supply current VDD=5V, VINH = /VINL ; Fout = 45kHz 2 A fmax Maximum Switching Frequency 45 kHz Driver Electrical Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit VDD Operating Supply Voltage 4.5 5 5.5 V VINi(max) Maximum Input Voltage -0.5 5 5.5 VINi (th+) Positive Going Threshold Voltage 3.2 VINi(th-) Negative Going Threshold Voltage 1 V RINi Input Resistance * i = L, H 1 k Ω Td(on) Turn On delay time Driver + IGBT 1100 n DT Built in dead time 600 Td(off) Turn Off delay time Driver + IGBT 750 ns PWD Pulse Width Distortion 300 PDD Propagation Delay Difference between any two driver Td(on) - Td(off) -350 350 ns VISOL Primary to Secondary Isolation 2500 V RMS * Low impedance guarantees good noise immunity.

APTLGT400A608G – Rev 0 February, 2011 www.microsemi.com 4-6 3. Package characteristics Symbol Characteristic Min Typ Max Unit VISOL RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz 2500 V TJ Operating junction temperature range -40 150 TOP Operating Ambient Temperature -40 85 TSTG Storage Temperature Range -40 100 TC Operating Case Temperature -40 100 To heatsink M5 2 4.7 Torque Mounting torque For terminals M5 2 4 N.m Wt Package Weight 550 g 4. LP8 Package outline (dimensions in mm) Ra 3,2

APTLGT400A608G – Rev 0 February, 2011 www.microsemi.com 5-6 Typical IGBT Performance Curve Output Characteristics (VGE=15V) TJ=25°C TJ=25°C TJ=150°C 100 200 300 400 500 600 700 800 0 0.5 1 1.5 2 2.5 3 VCE (V) IC (A) VDD = 5V VIN = 5V Energy losses vs Collector Current Eon Eoff 0 100 200 300 400 500 600 700 800 I C (A) E (mJ) VCE = 300V VDD = 5V VIN = 5V TJ = 150°C Reverse Bias Safe Operating Area 200 400 600 800 1000 0 100 200 300 400 500 600 700 VCE (V) IC (A) TJ=150°C Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration D = 0.9 0.7 0.5 0.3 0.1

0.05 Single Pulse

0.04 0.08 0.12 Rectangular Pulse Duration in Seconds Thermal Impedance (°C/W) Hard switching 0 100 200 300 400 500 IC (A) Fmax, Operating Frequency (kHz) VCE = 300V D = 50% VDD = 5V VIN = 5V TJ = 150°C TC =85°C Operating Frequency vs Collector Current Limited by internal gate drive power dissipation

APTLGT400A608G – Rev 0 February, 2011 www.microsemi.com 6-6 Typical diode Performance Curve Energy losses vs Collector Current 0 200 400 600 800 I F (A) Err (mJ) VR = 300V TJ = 150°C Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration D = 0.9 0.7 0.5 0.3 0.1 0.04 0.08 0.12 0.16 0.2 0.24 Rectangular Pulse Duration in Seconds Thermal Impedance (°C/W) Forward Characteristic of diode TJ=25°C TJ=150°C 100 200 300 400 500 600 700 800 V F (V) IF (A) Microsemi reserves the right to change, without notice, the specifications and information contained herein