6080K FUMAN | Alldatasheet

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Technical content

Features

  • VDS=60V；ID=80A； RDS(ON)<8.2mΩ@VGS=10V
  • SpecialDesignedforE-BikeControllerApplication
  • UltraLowOn-Resistance
  • HighUISandUIS 100%Test TO-252(DPAK) TopView SchematicDiagram Application
  • 48VE-BikeController Applications
  • HardSwitchedandHighFrequencyCircuits
  • UninterruptiblePowerSupply MarkingandpinAssignment PackageMarkingandOrderingInformation DeviceMarking Device DevicePackage Reel Size Tape width Quantity 6080K 6080K TO-252 - - - Table1. AbsoluteMaximumRatings(TA=25℃) Symbol Parameter Value Unit VDS Drain-SourceVoltage(VGS=0V） 60 V VGS Gate-SourceVoltage(VDS=0V) ±20 V ID(DC) DrainCurrent(DC)at Tc=25℃ 80 A ID(DC) DrainCurrent(DC)at Tc=100℃ 56 A IDM(pluse) DrainCurrent-Continuous@Current-Pulsed(Note 1) 240 A PD MaximumPower Dissipation(Tc=25℃) 60 W DeratingFactor 2.5 W/℃ EAS SinglePulseAvalancheEnergy(Note2) 310 mJ TJ,TSTG OperatingJunctionandStorageTemperatureRange -55To175 ℃ Notes:1.RepetitiveRating: PulseWidthLimitedbyMaximumJunctionTemperature 2.PulseTest:PulseWidth≤300μs,DutyCycle≤0.5%

Version1.0第 2 页 共 7 页www.superchip.cn 深圳市富满电子集团股份有限公司 SHEN ZHEN FINE MADE ELECTRONICS GROUP CO., LTD. 6080K（文件编号：S&CIC1698） N-ChannelTrenchPowerMOSFET Table2. ThermalCharacteristic Symbol Parameter Value Max Unit RJC Thermal Resistance,Junction-to-Case --- 2.2 ℃/W Table3. ElectricalCharacteristics(TA=25℃unlessotherwisenoted) Symbol Parameter TestCondition Min. Typ. Max. Units OffCharacteristic V(BR)DSS Drain-SourceBreakdown Voltage VGS=0V,ID=250μA 60 - - V IDSS ZeroGateVoltageDrain Current VDS=60V,VGS =0V, - - 1.0 μA IGSS GatetoBody LeakageCurrent VDS =0V,VGS =±20V - - ±100 nA OnCharacteristics VGS(th) GateThresholdVoltage VDS=VGS,ID=250μA 1.2 1.7 2.5 V RDS(on) StaticDrain-Sourceon-Resistance note2 VGS =10V,ID =40A - 6.9 8.2 mΩVGS =4.5V,ID =30A - 9.3 11 gFS ForwardTransconductance VDS =5V,ID =20A 10 - - S DynamicCharacteristics Ciss InputCapacitance VDS =30V,VGS =0V, f=1.0MHz - 1980 - pF Coss OutputCapacitance - 470 - pF Crss ReverseTransferCapacitance - 14 - pF Qg TotalGate Charge VDS=30V,ID =20A, VGS =10V - 31 - nC Qgs Gate-SourceCharge - 6 - nC Qgd Gate-Drain(“Miller”)Charge - 5 - nC SwitchingCharacteristics td(on) Turn-onDelay Time VDD=30V,ID =20A, RL=1Ω,RGEN=3Ω, VGS =10V - 10 - ns tr Turn-onRise Time - 5 - ns td(off) Turn-offDelay Time - 30 - ns tf Turn-offFall Time - 8 - ns Drain-SourceDiode Characteristics and MaximumRatings IS MaximumContinuous DraintoSource DiodeForward Current - - 80 A ISM MaximumPulsed Drainto Source Diode ForwardCurrent - - 320 A VSD Drainto SourceDiodeForward Voltage VGS =0V,IS=20A - 0.8 1.2 V trr BodyDiode ReverseRecoveryTime TJ=25℃, IF=20A,dI/dt=100A/μs - 17 - ns Qrr BodyDiode ReverseRecovery Charge - 58 - nC Notes:1.RepetitiveRating: PulseWidthLimitedbyMaximumJunctionTemperature 2.PulseTest:PulseWidth≤300μs,DutyCycle≤0.5%

Version1.0第 3 页 共 7 页www.superchip.cn 深圳市富满电子集团股份有限公司 SHEN ZHEN FINE MADE ELECTRONICS GROUP CO., LTD. 6080K（文件编号：S&CIC1698） N-ChannelTrenchPowerMOSFET TestCircuit Figure1:GateChargeTestCircuit& Waveform Figure2:ResistiveSwitchingTestCircuit& Waveforms Figure3:UnclampedInductiveSwitchingTestCircuit& Waveforms

Version1.0第 4 页 共 7 页www.superchip.cn 深圳市富满电子集团股份有限公司 SHEN ZHEN FINE MADE ELECTRONICS GROUP CO., LTD. 6080K（文件编号：S&CIC1698） N-ChannelTrenchPowerMOSFET Figure4:PeakDiodeRecoverydv/dtTestCircuit&Waveforms(For N-channel)

Version1.0第 5 页 共 7 页www.superchip.cn 深圳市富满电子集团股份有限公司 SHEN ZHEN FINE MADE ELECTRONICS GROUP CO., LTD. 6080K（文件编号：S&CIC1698） N-ChannelTrenchPowerMOSFET TYPICALELECTRICALANDTHERMALCHARACTERISTICS(Curves) Figure1.OutputCharacteristics Figure2. TransferCharacteristics VDSDrain-SourceVoltage (V) VGSGate-Source Voltage(V) Figure3.BVDSSvsJunctionTemperature Figure4.IDvsJunctionTemperature Figure7.BVDSS vsJunctionTemperature Figure8.VGS(th) vsJunctionTemperature Temperature（℃） ID (A) ID (A) ID-Drain Current(A)

Version1.0第 6 页 共 7 页www.superchip.cn 深圳市富满电子集团股份有限公司 SHEN ZHEN FINE MADE ELECTRONICS GROUP CO., LTD. 6080K（文件编号：S&CIC1698） N-ChannelTrenchPowerMOSFET Figure8.CapacitancevsVds QgGate Charge(nC) VDSDrain-SourceVoltage (V) Figure7.GateCharge VGS (Volts) CCapacitance(pF)

Version1.0第 7 页 共 7 页www.superchip.cn 深圳市富满电子集团股份有限公司 SHEN ZHEN FINE MADE ELECTRONICS GROUP CO., LTD. 6080K（文件编号：S&CIC1698） N-ChannelTrenchPowerMOSFET TO-252PackageInformation