FDP6035AL FAIRCHILD | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 5

Technical content

Features

  • 48 A, 30 V RDS(ON) = 12 mΩ @ VGS = 10 V RDS(ON) = 14 mΩ @ VGS = 4.5 V
  • Critical DC electrical parameters specified at elevated temperature
  • High performance trench technology for extremely low RDS(ON)
  • 175°C maximum junction temperature rating S G D TO-220 FDP Series D G S TO-263AB FDB Series S G D Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol Parameter Ratings Units VDSS Drain-Source Voltage 30 V VGSS Gate-Source Voltage ± 20 V ID Drain Current – Continuous 48 A – Pulsed (Note 1) 180 PD Total Power Dissipation @ TC = 25°C 52 W Derate above 25°C 0.3 W/°C TJ, TSTG Operating and Storage Junction Temperature Range –65 to +175 °C Thermal Characteristics Rθ JC Thermal Resistance, Junction-to-Case 2.9 °C/W Rθ JA Thermal Resistance, Junction-to-Ambient 62.5 Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDB6035AL FDB6035AL 13’’ 24mm 800 units FDP6035AL FDP6035AL Tube n/a 45 FDP6035AL/FDB6035AL

FDP6035AL/FDB6035AL Rev D(W) Electrical Characteristics TA = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Drain-Source Avalanche Ratings (Note 1) EAS Single Pulse Drain-Source Avalanche Energy VDD = 15 V, ID = 48 A 58 mJ IAS Maximum Drain-Source Avalanche Current 48 A Off Characteristics BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ID = 250 µA 30 V Δ BVDSS Δ TJ Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C 23 mV/°C IDSS Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 1 µA IGSS Gate–Body Leakage VGS = ± 20 V, VDS = 0 V ± 100 nA On Characteristics (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA 1 1.9 3 V Δ VGS(th) Δ TJ Gate Threshold Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C –5 mV/°C RDS(on) Static Drain–Source On– Resistance VGS = 10 V, ID = 24 A VGS = 4.5 V, ID = 20 A VGS= 10 V, ID = 24 A, TJ=125°C 7.9 10.2 13.0 mΩ ID(on) On–State Drain Current VGS = 10 V, VDS = 10 V 60 A gFS Forward Transconductance VDS = 10V, ID = 24 A 68 S Dynamic Characteristics Ciss Input Capacitance 1250 pF Coss Output Capacitance 330 pF Crss Reverse Transfer Capacitance VDS = 15 V, V GS = 0 V, f = 1.0 MHz 155 pF RG Gate Resistance VGS = 15 mV, f = 1.0 MHz 1.3 Ω Switching Characteristics (Note 2) td(on) Turn–On Delay Time 11 20 ns tr Turn–On Rise Time 12 22 ns td(off) Turn–Off Delay Time 29 46 ns tf Turn–Off Fall Time VDD = 15V, ID = 1 A, VGS = 10 V, RGEN = 6 Ω 12 21 ns Qg Total Gate Charge 13 18 nC Qgs Gate–Source Charge 4.3 nC Qgd Gate–Drain Charge VDS = 15 V, ID = 48 A, VGS = 5 V 5.5 nC Drain–Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain–Source Diode Forward Current 60 A VSD Drain–Source Diode Forward Voltage VGS = 0 V, IS = 24 A (Note 1) 0.92 1.3 V trr Diode Reverse Recovery Time 26 nS Qrr Diode Reverse Recovery Charge IF = 24 A, diF/dt = 100 A/µs 15 nC Notes: 1. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% FDP6035AL/FDB6035AL

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY , FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Preliminary No Identification Needed Obsolete This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Formative or In Design First Production Full Production Not In Production LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ OPTOLOGIC OPTOPLANAR™ PACMAN™ POP™ FACT Quiet Series™ FAST FASTr™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ I 2C™ ImpliedDisconnect™ ISOPLANAR™ Rev. I5 ACEx™ ActiveArray™ Bottomless™ CoolFET™ CROSSVOLT ™ DOME™ EcoSPARK™ E 2CMOS TM EnSignaTM FACT™ Power247™ PowerTrench QFET  QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ SILENT SWITCHER SMART START™ SPM™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic TINYOPTO™ TruTranslation™ UHC™ UltraFET VCX™ Across the board. Around the world.™ The Power Franchise™ Programmable Active Droop™