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Technical content
Features
Integrated Doherty splitter and combiner RF decoupled drain pins reduce overall board space On- -chip matching (50 ohm input, DC blocked) Integrated quiescent current temperature compensation with enable/disable function(2) 1. All data measured in fixture with device soldered to heatsink. 2. Refer to AN1977,Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family, and to AN1987,Quiescent Current Control for the RF Integrated Circuit Device Family.Go tohttp://www.nxp.com/RF and search for AN1977 or AN1987. Document Number: A3I25D080N Rev. 0, 03/2021 NXP Semiconductors Technical Data 2300–2690 MHz, 8.3 W Avg., 28 V AIRFAST RF LDMOS INTEGRATED POWER AMPLIFIERS A3I25D080N A3I25D080GN TO- -270WB- -17 PLASTIC A3I25D080N TO- -270WBG- -17 PLASTIC A3I25D080GN 2021 NXP B.V.
the source terminal for the transistor. Figure 1. Functional Block Diagram Figure 2. Pin Connections Table 1. Maximum Ratings Table 2. Thermal Characteristics Table 3. ESD Protection Characteristics Table 4. Moisture Sensitivity Level
- Continuous use at maximum temperature will affect MTTF.
Table 5. Electrical Characteristics(TA =2 5C unless otherwise noted)
- Each side of device measured separately.
Table 5. Electrical Characteristics(TA =2 5C unless otherwise noted)(continued) CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @5M H zO f f s e t . Table 6. Ordering Information
- Part internally input and output matched.
- Measurements made with device in straight leadconfiguration before any lead forming operation is applied. Lead forming is used for gull
- All data measured in fixture with device soldered to heatsink.
- P3dB = Pavg + 7.0 dB where Pavg is the average output power measured using anunclipped W- -CDMA single- -carrier input signal
where output PAR is compressed to 7.0 dB @ 0.01% probability on CCDF.
- Refer to AN1977,Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family, and to AN1987,Quiescent Current Control
for the RF Integrated Circuit Device Family.Go tohttp://www.nxp.com/RF and search for AN1977 or AN1987.
Note: All data measured in fixture with device soldered to heatsink. Figure 3. A3I25D080N Characterization Test Circuit Component Layout — 2496–2690 MHz Table 7. A3I25D080N Characterization Test Circuit ComponentDesignations and Values — 2496–2690 MHz
Figure 4. A3I25D080N Test Circuit Component Layout — 2300–2400 MHz Table 8. A3I25D080N Test Circuit Component Designations and Values — 2300–2400 MHz
PACKAGE INFORMATION
PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS Refer to the following resources to aid your design process. Application Notes AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages AN1955: Thermal Measurement Methodology of RF Power Amplifiers AN1977: Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family AN1987: Quiescent Current Control for the RF Integrated Circuit Device Family Software .s2p File Development Tools Printed Circuit Boards
REVISION HISTORY
The following table summarizes revisions to this document. Revision Date Description 0 Mar. 2021 Initial release of data sheet
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