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Technical content
Features
High terminal impedances for optimal broadband performance Advanced high performance in- -package Doherty Improved linearized error vector magnitude with next generation signal Able to withstand extremely high output VSWR and broadband operating conditions Document Number: A3G26H350W17S Rev. 1, 01/2021 NXP Semiconductors Technical Data 2496–2690 MHz, 59 W Avg., 48 V AIRFAST RF POWER GaN TRANSISTOR A3G26H350W17S NI- -780S- -4S2S Figure 1. Pin Connections
Table 1. Maximum Ratings Table 2. Recommended Operating Conditions Table 3. Thermal Characteristics Table 4. ESD Protection Characteristics Table 5. Electrical Characteristics(TA =2 5C unless otherwise noted)
- RCHC (FEA) must be used for purposes related to reliability and limitations on maximum channel temperature. MTTF may be estimated
by the expression MTTF (hours) = 10[A + B/(T + 273)], whereT is the channel temperature in degrees Celsius,A = –11.1 andB = 8366.
- Each side of device measured separately.
Table 5. Electrical Characteristics(TA =2 5C unless otherwise noted)(continued) Pout = 59 W Avg., f = 2690 MHz, Single- -Carrier W- -CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. Table 6. Ordering Information
- Part internally input matched.
- P3dB = Pavg + 7.0 dB where Pavg is the average output power measured using an unclipped W- -CDMA single- -carrier input signal where
output PAR is compressed to 7.0 dB @ 0.01% probability on CCDF.
- Set gate voltage VGSA and VGSB to –5 V.
- Set drain voltage VDSA and VDSB to nominal supply voltage (+48 V).
- Increase VGSA (carrier side) until IDQA current is attained.
- Increase VGSB (peaking side) to target bias voltage.
- Apply RF input power to desired level.
- Adjust drain voltage VDSA and VDSB to 0 V. Allow adequate time
for drain voltage to reduce to 0 V from external drain capacitors.
Figure 2. A3G26H350W17S Production Test Circuit Component Layout Table 7. A3G26H350W17S Production Test Circuit Component Designations and Values
PACKAGE INFORMATION
PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS Refer to the following resources to aid your design process. Application Notes AN1908: Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages AN1955: Thermal Measurement Methodology of RF Power Amplifiers Software .s2p File Development Tools Printed Circuit Boards
REVISION HISTORY
The following table summarizes revisions to this document. Revision Date Description 0 Nov. 2020 Initial release of data sheet 1 Jan. 2021 Table 1, Maximum Ratings: updated operating voltage for complete data sheet standardization, p. 2 Table 2, Recommended Operating Conditions: added to data sheet, p. 2
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