KA5S_03 FAIRCHILD | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 16

Technical content

Features

  • Wide Operating Frequency Range Up to 150kHz
  • Lowest Cost SMPS Solution
  • Lowest External Components
  • Low Start-up Current (Max:170 µA)
  • Low Operating Current (Max:12mA)
  • Internal High V oltage SenseFET
  • Over V oltage Protection With Latch Mode (Min23V)
  • Over Load Protection With Latch Mode
  • Over Current Protection With Latch Mode
  • Internal Thermal Protection With Latch Mode
  • Pulse By Pulse Over Current Limiting
  • Under V oltage Lockout With Hysteresis
  • External Sync. Terminal TO-3P-5L TO-220-5L Internal Block Diagram VCC Soft Start & Sync Vref VCC UVLO 15/9V Feedback VREF Vth.sy 4µA OSC VREF VCC 2.5V R0.95mA OLP (Vfb=7.5V) TSD (Tj=160°C) OVP (VCC=25V) OCP (VS=1.1V) 1µs Window Open Circuit Power-on Reset (VCC=6.5V) S R Q Shutdown Latch Voffset S R Q CLK 2.5V Bias VREF UVLO Drain GND VS SenseFET Rsense KA5S-SERIES KA5S0765C/KA5S0965/KA5S12656/KA5S1265 Fairchild Power Switch(FPS)

(Ta=25°C, unless otherwise specified) Characteristic Symbol Value Unit KA5S0765C Drain-Gate Voltage(RGS=1MΩ) VDGR 650 V Gate-Source(GND) Voltage V GS ±30 V Drain Current Pulsed(1) IDM 28 ADC Continuous Drain Current (Tc = 25°C) I D 7.0 ADC Continuous Drain Current (Tc = 100°C) I D 5.6 ADC Single Pulsed Avalanch Current(3)(Energy (2))I AS(EAS) 27(570) A(mJ) Maximum Supply Voltage V CC,MAX 30 V Input Voltage Range VFB -0.3 to VCC V VSS -0.3 to 8 V Total Power Dissipation PD (Watt H/S) 140 W Darting 1.11 W/ °C Operating Junction Temperature. T J +160 °C Operating Ambient Temperature. T A -25 to +85 °C Storage Temperature Range. T STG -55 to +150 °C KA5S0965 Drain-Gate Voltage(RGS=1MΩ) VDGR 650 V Gate-Source(GND) Voltage V GS ±30 V Drain Current Pulsed(1) IDM 36 ADC Continuous Drain Current (Tc = 25°C) I D 9.0 ADC Continuous Drain Current (Tc = 100°C) I D 5.8 ADC Single Pulsed Avalanch Current(3)(Energy (2))I AS(EAS) 25(950) A(mJ) Maximum Supply Voltage V CC,MAX 30 V Input Voltage Range VFB -0.3 to VCC V VSS -0.3 to 8 V Total Power Dissipation PD (Watt H/S) 170 W Darting 1.33 W/ °C Operating Junction Temperature. T J +160 °C Operating Ambient Temperature. T A -25 to +85 °C Storage Temperature Range. T STG -55 to +150 °C

Absolute Maximum Ratings (Continued) (Ta=25°C, unless otherwise specified) Note: 1. Repetitive rating : Pulse width limited by maximum junction temperature 2. L = 10mH, V DD =50V, RG = 27Ω , starting Tj = 25°C 3. L = 13µH, starting Tj = 25°C Characteristic Symbol Value Unit KA5S12656 Drain-Gate Voltage(RGS=1MΩ) VDGR 650 V Gate-Source(GND) Voltage V GS ±30 V Drain Current Pulsed(1) IDM 48 ADC Continuous Drain Current (Tc = 25°C) I D 12 ADC Continuous Drain Current (Tc = 100°C) I D 8.4 ADC Single Pulsed Avalanch Current(3)(Energy (2))I AS(EAS) 25(785) A(mJ) Maximum Supply Voltage V CC,MAX 30 V Input Voltage Range VFB -0.3 to VCC V VSS -0.3 to 8 V Total Power Dissipation PD (Watt H/S) 160 W Darting 1.28 W/ °C Operating Junction Temperature. T J +160 °C Operating Ambient Temperature. T A -25 to +85 °C Storage Temperature Range. T STG -55 to +150 °C KA5S1265 Drain-Gate Voltage(RGS=1MΩ )V DGR 650 V Gate-Source(GND) Voltage V GS ±30 V Drain Current Pulsed(1) IDM 48 ADC Continuous Drain Current (Tc = 25°C) I D 12 ADC Continuous Drain Current (Tc = 100°C) I D 8.4 ADC Single Pulsed Avalanch Current(3)(Energy (2))I AS(EAS) 42(785) A(mJ) Maximum Supply Voltage V CC,MAX 30 V Input Voltage Range VFB -0.3 to VCC V VSS -0.3 to 8 V Total Power Dissipation PD (Watt H/S) 160 W Darting 1.28 W/ °C Operating Junction Temperature. T J +160 °C Operating Ambient Temperature. T A -25 to +85 °C Storage Temperature Range. T STG -55 to +150 °C

Electrical Characteristics (SFET Part) (Ta = 25°C unless otherwise specified) Parameter Symbol Conditions Min. Typ. Max. Unit KA5S0765C Drain-Source Breakdown Voltage BV DSS VGS=0V, ID=50µA 650 - - V Zero Gate Voltage Drain Current I DSS VDS=Max., Rating, VGS=0V - - 50 µA VDS=0.8Max., Rating, VGS=0V, TC=125°C - - 200 µA Static Drain-Source on Resistance(1) RDS(on) V GS=10V, ID=4.0A - 1.25 1.6 Ω Forward Transconductance(1) gfs V DS=15V, ID=4.0A 3.0 - - S Input Capacitance Ciss VGS=0V, VDS=25V, f = 1MHz - 1600 - pFOutput Capacitance Coss - 310 - Reverse Transfer Capacitance Crss - 120 - Turn on Delay Time td(on) V DD=0.5B VDSS, ID=7.0A (MOSFET switching time is essentially independent of operating temperature) -2 5- nS Rise Time tr - 55 - Turn Off Delay Time td(off) - 80 - Fall Time tf - 50 - Total Gate Charge (Gate-Source+Gate-Drain) Qg V GS=10V, ID=7.0A, VDS=0.5B VDSS(MOSFET switching time is essentially independent of operating temperature) -- 7 2 nCGate-Source Charge Qgs - 9.3 - Gate-Drain (Miller) Charge Qgd - 29.3 - KA5S0965 Drain-Source Breakdown Voltage BV DSS VGS=0V, ID=50µA 650 - - V Zero Gate Voltage Drain Current I DSS VDS=Max., Rating, VGS=0V - - 50 µA VDS=0.8Max., Rating, VGS=0V, TC=125°C - - 200 µA Static Drain-Source on Resistance(1) RDS(on) V GS=10V, ID=4.5A - 0.96 1.2 Ω Forward Transconductance(1) gfs V DS=50V, ID=4.5A 5.0 - - S Input Capacitance Ciss VGS=0V, VDS=25V, f = 1MHz - 1750 - pFOutput Capacitance Coss - 190 - Reverse Transfer Capacitance Crss - 78 - Turn on Delay Time td(on) VDD=0.5B VDSS, ID=9.0A (MOSFET switching time is essentially independent of operating temperature) -2 0 5 0 nS Rise Time tr - 23 55 Turn Off Delay Time td(off) - 85 180 Fall Time tf - 30 70 Total Gate Charge (Gate-Source+Gate-Drain) Qg V GS=10V, ID=9.0A, VDS=0.5B VDSS(MOSFET switching time is essentially independent of operating temperature) -7 4 9 5 nC Gate-Source Charge Qgs - 12 - Gate-Drain (Miller) Charge Qgd - 35 -

Electrical Characteristics (SFET Part) (Continued) (Ta = 25°C unless otherwise specified) Note: 1. Pulse Test : Pulse width ≤ 300uS, Duty Cycle ≤ 2% 2.MOSFET switching time is essentially independent of operating temperature Parameter Symbol Conditions Min. Typ. Max. Unit KA5S12656 Drain-Source Breakdown Voltage BV DSS VGS=0V, ID=50µA 650 - - V Zero Gate Voltage Drain Current I DSS VDS=Max., Rating, VGS=0V - - 50 µA VDS=0.8Max., Rating, VGS=0V, TC=125°C - - 200 µA Static Drain-Source On Resistance(1) RDS(on) V GS=10V, ID=6.0A - 0.72 0.9 Ω Forward Transconductance(1) gfs V DS=50V, ID=4.0A 5.7 - - S Input Capacitance Ciss VGS=0V, VDS=25V, f = 1MHz - 2700 - pFOutput Capacitance Coss - 300 - Reverse Transfer Capacitance Crss - 61 - Turn on Delay Time td(on) V DD=0.5B VDSS, ID=12.0A (MOSFET switching time is essentially independent of operating temperature) -1 8- nS Rise Time tr - 37 - Turn Off Delay Time td(off) - 88 - Fall Time tf - 36 - Total Gate Charge (Gate-Source+Gate-Drain) Qg V GS=10V, ID=12.0A, VDS=0.5B VDSS(MOSFET switching time is essentially independent of operating temperature) - - 140 nCGate-Source Charge Qgs - 20 - Gate-Drain (Miller) Charge Qgd - 69 - KA5S1265 Drain-Source Breakdown Voltage BV DSS VGS=0V, ID=50µA 650 - - V Zero Gate Voltage Drain Current I DSS VDS=Max., Rating, VGS=0V - - 50 µA VDS=0.8Max., Rating, VGS=0V, TC=125°C - - 200 µA Static Drain-Source on Resistance(1) RDS(on) V GS=10V, ID=6.0A - 0.72 0.9 Ω Forward Transconductance(1) gfs V DS=50V, ID=4.0A 5.7 - - S Input Capacitance Ciss VGS=0V, VDS=25V, f = 1MHz - 2700 - pFOutput Capacitance Coss - 300 - Reverse Transfer Capacitance Crss - 61 - Turn on Delay Time td(on) VDD=0.5BVDSS, ID=12.0A (MOSFET switching time is essentially independent of operating temperature) -1 8- nS Rise Time tr - 37 - Turn Off Delay Time td(off) - 88 - Fall Time tf - 36 - Total Gate Charge (Gate-Source+Gate-Drain) Qg V GS=10V, ID=12.0A, VDS=0.5B VDSS(MOSFET switching time is essentially independent of operating temperature) - - 140 nC Gate-Source Charge Qgs - 20 - Gate-Drain (Miller) Charge Qgd - 69 - S 1 R----=

Electrical Characteristics (Control Part) (Continued) (VCC=16V, Tamb = 25°C unless otherwise specified) Note: 1. These parameters are the current flowing in the control IC. 2. These parameters, although guaranteed, are not 100% tested in mass production 3. These parameters, although guaranteed, are tested in EDS(wafer test) process 4. These parameters are indicated Inductor current. Parameter Symbol Conditions Min. Typ. Max. Unit UVLO SECTION Start Threshold Voltage V START VFB=GND 14 15 16 V Stop Threshold Voltage V STOP VFB=GND 8 9 10 V OSCILLATOR SECTION Initial Frequency F OSC -1 8 2 0 2 2 k H z Voltage Stability F STABLE 12V ≤ VCC ≤ 23V 0 1 3% Temperature Stability (Note2) ∆FOSC -25°C ≤ Τa≤ 85°C0 ±5 ±10 % Maximum Duty Cycle D MAX -9 2 9 5 9 8 % Minimum Duty Cycle D MIN -- - 0 % FEEDBACK SECTION Feedback Source Current I FB VFB=GND 0.7 0.9 1.1 mA Shutdown Feedback Voltage V SD VFB ≥ 6.9V 6.9 7.5 8.1 V Shutdown Delay Current I DELAY VFB=5V 3.0 4.0 5.0 µA SYNC. & SOFTSTART SECTION Softstart Voltage V SS VFB=2V 4.7 5.0 5.3 V Softstart Current I SS VSS=0V 0.75 0.95 1.15 mA Sync High Threshold Voltage(Note3) V SYNCH VCC=16V , VFB=5V - 7.0 - V Sync Low Threshold Voltage(Note3) V SYNCL VCC=16V , VFB=5V - 6.0 - V CURRENT LIMIT(SELF-PROTECTION)SECTION Peak Current Limit (Note4) I OVER KA5S0765C 3.52 4.0 4.48 AKA5S0965 5.28 6.0 6.72 KA5S12656 5.28 6.0 6.72 KA5S1265 7.04 8.0 8.96 PROTECTION SECTION Over Voltage Protection V OVP VCC ≥ 24V 23 25 28 V Over Current Latch voltage(Note3) V OCL - 0.9 1.0 1.1 V Thermal Shutdown Tempature(Note2) TSD - 140 160 - °C TOTAL DEVICE SECTION Start Up Current I START VFB=GND, VCC=14V - 0.1 0.17 mA Operating Supply Current(Note1) IOP VFB=GND, VCC=16V -7 1 2 m AIOP(MIN) VFB=GND, VCC=12V IOP(MAX) VFB=GND, VCC=30V

Package Dimensions (Continued) TO-3P-5L(Forming)

Package Dimensions (Continued) TO-220-5L

Package Dimensions (Continued) TO-220-5L(Forming)

TOP Mark and Pinout Information Notes ; (1) F ; Fairchild Semiconductor (2) 5S0765C, 5S0965, 5S12656, 5S1265; Device Marking Name (3) YY: Last Two Digit of Calender Year (4) WW: Patweek Based on Fairchild Semiconductor Work Month Calender Device Marking KA5S0765C 5S0765C KA5S0965 5S0965 KA5S12656 5S12656 KA5S1265 5S1265 Pin No. Symbol Description

1 Drain SenseFET Drain

2 GND Ground (Source)

CC Control Part Supply Input

4 F/B PWM Non Inverting Input

5 S/S Soft start & External Sync. 11112 2225 55544443333 FFFF MMMMAAAARRRRKKKKIIIINNNNGGGG YYYYYYYYWWWWWWWW

Ordering Information

TU : Non Forming Type YDTU : Forming Type Product Number Package Marking Code BVdss Rds(on) KA5S0765CTU TO-220-5L 5S0765C 650V 1.6 ΩKA5S0765CYDTU TO-220-5L(Forming) KA5S0965TU TO-3P-5L 5S0965 650V 1.2 ΩKA5S0965YDTU TO-3P-5L(Forming) KA5S12656TU TO-3P-5L 5S12656 650V 0.9 Ω KA5S12656YDTU TO-3P-5L(Forming) KA5S1265TU TO-3P-5L 5S1265 650V 0.9 Ω KA5S1265YDTU TO-3P-5L(Forming)

8/25/03 0.0m 001  2003 Fairchild Semiconductor Corporation LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. www.fairchildsemi.com DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.