SSPR5N06-C SECOS | Alldatasheet
Document overview
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Technical content
5A, 60V , R DS(O/glyph1197) 90mΩ /glyph1197-Channel Enhancement Mode Power MOSFET 19-Oct-2018 Rev. A Page 1 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
The SSPR5N06-C is the highest performance trench N-Ch MOSFETs with extreme high cell density, which provide excellent R DS(ON) and gate charge for most of the synchronous buck converter applications. The SSPR5N06-C meet the RoHS and Green Product requirement with full function reliability approved.
FEATURES
/circle6 Advanced High Cell Density Trench Technology /circle6 Super Low Gate Charge /circle6 Green Device Available MARKING
PACKAGE INFORMATION
Parameter Symbol Ratings Unit Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS ±20 V TC=25°C 5 Continuous Drain Current 1, @VGS =10V TC=100°C ID 3.5 A Pulsed Drain Current 3 IDM 12 A Total Power Dissipation T C=25°C P D 4.5 W Operating Junction & Storage Temperature TJ, T STG -55~150 °C Thermal Resistance Ratings Thermal Resistance Junction-Ambient 1 85 Thermal Resistance Junction-Ambient 2 RθJA 135 Thermal Resistance Junction-Case 1 R θJC 28 °C/W Part Number Type SSPR5N06-C Lead (Pb)-free and Halogen-free SPR-8PP G S S S D D D D A 3.20 3.40 G 1.35 1.98 B 3.00 3.25 H 0.24 0.35 C 3.20 3.45 I 0 .35TYP. D 3.00 3.20 J 0.60TYP. E 0.65 BSC. K 0.10 0.25 F 2.39 2.60 L 0.70 0.90 5N06 /box4/box4/box4/box4 /box4/box4/box4/box4 /box4/box4/box4/box4 /box4/box4/box4/box4 /box4/box4 /box4/box4 = Date code
5A, 60V , R DS(O/glyph1197) 90mΩ /glyph1197-Channel Enhancement Mode Power MOSFET 19-Oct-2018 Rev. A Page 2 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. ELECTRICAL CHARACTERISTICS (T J=25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Drain-Source Breakdown Voltage BV DSS 60 - - V V GS =0, I D =250µA Gate Threshold Voltage V GS(th) 1 - 2.5 V V DS =VGS , I D =250µA Forward Transconductance g fs - 13 - S V DS =5V, I D =2A Gate-Source Leakage Current IGSS - - ±100 nA V GS = ±20V TJ=25°C - - 1 V DS =48V, V GS =0 Drain-Source Leakage Current T J=55°C IDSS - - 5 µA VDS =48V, V GS =0 - - 90 V GS =10V, I D =3A Static Drain-Source On-Resistance 4 RDS(ON) - - 100 mΩ VGS =4.5V, I D =2A Total Gate Charge Q g - 5 - Gate-Source Charge Q gs - 1.68 - Gate-Drain (“Miller”) Change Qgd - 1.9 - nC ID =2A VDS =48V VGS =4.5V Turn-on Delay Time T d(on) - 1.6 - Rise Time T r - 7.2 - Turn-off Delay Time T d(off) - 25 - Fall Time T f - 14.4 - nS VDD =30V ID =2A VGS =10V RG=3.3Ω Input Capacitance C iss - 511 - Output Capacitance C oss - 38 - Reverse Transfer Capacitance Crss - 25 - pF VGS =0 VDS =15V f=1MHz Source-Drain Diode Continuous Source Current 1 I S - - 5 A Pulsed Source Current 3 I SM - - 12 A Diode Forward Voltage 4 V SD - - 1.2 V I S=1A, V GS =0 Reverse Recovery Time t rr - 9.7 - nS Reverse Recovery Charge Q rr - 5.8 - nC IF=2A, dI/dt=100A/µs TJ=25 °C Notes: 1. Surface mounted on 1”x1” FR-4 board with 2OZ copper. 2. When mounted on Min. Copper pad. 3. Pulse width limited by maximum junction temperature, pulse width ≦300µs, duty cycle ≦2%. 4. The data tested by pulsed, pulse width ≦300µs, duty cycle ≦2%.
5A, 60V , R DS(O/glyph1197) 90mΩ /glyph1197-Channel Enhancement Mode Power MOSFET 19-Oct-2018 Rev. A Page 3 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVES
5A, 60V , R DS(O/glyph1197) 90mΩ /glyph1197-Channel Enhancement Mode Power MOSFET 19-Oct-2018 Rev. A Page 4 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVES