5M0765RC

KA5M0765RC FAIRCHILD | Alldatasheet

Document overview

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Technical content

FEATURES

• Precision fixed operating frequency (70kHz)  Low start-up current (Typ. 100mA)  Pulse by pulse current limiting  Over current protection  Over voltage protection (Min. 25V)  Internal thermal shutdown function  Under voltage lockout  Internal high voltage sense FET  Auto-restart mode

ORDERING INFORMATION

Device Package Topr ( °°°°C) KA5M0765RC TO-220F-5L −25°C to +85°C TO-220F-5L 1. GND 2. Drain 3. Vcc 4. FB BLOCK DIAGRAM The SPS product family is specially designed for an off-line SMPS with minimal external components. The SPS consist of high voltage power SenseFET and current mode PWM IC. Included PWM controller features integrated fixed frequency oscillator, under voltage lock-out, leading edge blanking, optimized gate turn-on/turn-off driver, thermal shutdown protection, over voltage protection, and temperature compensated precision current sources for loop compensation and fault protection circuitry. Compared to discrete MOSFET and PWM controller or RCC solution, a SPS can reduce total component count, design size, weight and at the same time increase efficiency, productivity, and system reliability. It has a basic platform well suited for cost-effective design in either a flyback converter or a forward converter.  1999 Fairchild Semiconductor Corporation REV. B

NOTES: 1. Tj=25°C to 150°C 2. Repetitive rating: Pulse width limited by maximum junction temperature 3. L=24mH, starting Tj=25°C 4. L=13uH, starting Tj=25°C Characteristic Symbol Value Unit Drain-source (GND) voltage (1) VDSS 650 V Drain-Gate voltage (RGS =1M Ω )V DGR 650 V Gate-source (GND) voltage V GS ±30 V Drain current pulsed (2) IDM 28.0 A DC Single pulsed avalanche energy (3) EAS 570 mJ Avalanche current (4) IAS 20 A Continuous drain current (TC =25°C) I D 7.0 A DC Continuous drain current (TC =100°C) I D 5.6 A DC Supply voltage V CC 30 V Analog input voltage range V FB −0.3 to VSD V Total power dissipation P D (wt H/S) 140 W Derating 1.11 W/ °C Operating temperature T OPR −25 to +85 °C Storage temperature T STG −55 to +150 °C

NOTE: Pulse test: Pulse width ≤ 300µS, duty cycle ≤ 2% ELECTRICAL CHARACTERISTICS (SFET part) (Ta=25°C unless otherwise specified) Characteristic Symbol Test condition Min. Typ. Max. Unit Drain-source breakdown voltage BV DSS VGS =0V, ID =50µA6 5 0 −− V Zero gate voltage drain current IDSS VDS =Max., Rating, VGS =0V −− 50 µA VDS =0.8Max., Rating, VGS =0V, TC =125°C −− 200 µA Static drain-source on resistance (note) R DS(ON) VGS =10V, ID =0.5A − 1.25 1.6 Ω Forward transconductance (note) gfs V DS =50V, ID =0.5A 3.0 −− S Input capacitance Ciss V GS =0V, VDS =25V, f=1MHz − 1600 − pF Output capacitance Coss − 310 − Reverse transfer capacitance Crss − 120 − Turn on delay time td(on) V DD =0.5BVDSS , ID =1.0A (MOSFET switching time are essentially independent of operating temperature) − 25 − nS Rise time tr − 55 − Turn off delay time td(off) − 80 − Fall time tf − 50 − Total gate charge (gate-source+gate-drain) Qg V GS =10V, ID =1.0A, VDS =0.5BVDSS (MOSFET switching time are essentially independent of operating temperature) −− 72 nC Gate-source charge Qgs − 9.3 − Gate-drain (Miller) charge Qgd − 29.3 −

NOTES: 1. These parameters, although guaranteed, are not 100% tested in production 2. These parameters, although guaranteed, are tested in EDS (wafer test) process ELECTRICAL CHARACTERISTICS (Control part) (Ta=25°C unless otherwise specified) Characteristic Symbol Test condition Min. Typ. Max. Unit REFERENCE SECTION Output voltage (1) Vref Ta=25 °C 4.80 5.00 5.20 V Temperature Stability (1)(2) Vref/∆T −25°C ≤Ta≤+85°C − 0.3 0.6 mV/ °C OSCILLATOR SECTION Initial accuracy F OSC Ta=25°C 6 16 77 3k H z Frequency change with temperature (2) ∆F/∆T −25°C ≤Ta≤+85°C −± 5 ±10 % PWM SECTION Maximum duty cycle Dmax − 74 77 80 % FEEDBACK SECTION Feedback source current I FB Ta=25°C, 0V<Vfb<3V 0.7 0.9 1.1 mA Shutdown delay current Idelay Ta=25 °C, 5V≤Vfb≤VSD 456 µA OVER CURRENT PROTECTION SECTION Over current protection I L(max) Max. inductor current 4.40 5.00 5.60 A UVLO SECTION Start threshold voltage Vth(H) − 8.4 9 9.6 V Minimum operating voltage Vth(L) After turn on 14 15 16 V TOTAL STANDBY CURRENT SECTION Start current I ST VCC =14V − 0.1 0.17 mA Operating supply current (control part only) IOPR VCC <28 − 71 2 m A SHUTDOWN SECTION Shutdown Feedback voltage V SD Vfb>6.5V 6.9 7.5 8.1 V Thermal shutdown temperature (Tj) (1) TSD − 140 160 −° C Over voltage protection V OVP VCC >24V 25 27 29 V

TYPICAL PERFORMANCE CHARACTERISTICS (SFET part) 02468 1 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 @ Note : Tj=25/G01 Vgs=10V Vgs=20V RDS(on) , [/G01] Drain-Source On-Resistance ID,Drain Current [A] Fig. 2 Transfer Characteristics Fig 1. Output Characteristics Fig. 4 Source-Drain Diode Forward Voltage Fig. 3 On-Resistance vs. Drain Current Fig. 6 Gate Charge vs. Gate-Source Voltage Fig.5 Capacitance vs. Drain-Source Voltage 11 0 0.1 @Notes: 1. 300µ s Pulse Test 2. TC = 25 oC VGS Top : 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V Bottom:4.5V ID, Drain Current [A] VDS, Drain-Source Voltage [V] 2468 1 0 0.1 @ Not es : 1. VDS = 30 V 2. 300 µ s Pulse Test -25 oC25 oC 150 oC ID, Drain Current [A] VGS, Gate-Source Voltage [V] 0.1 @ Not es : 1. VGS = 0V 2. 300 µ s Pulse Test 25 oC150 oC IDR, Reverse Drain Current [A] VSD, Source-Drain Voltage [V] 11 0 200 400 600 800 1000 1200 1400 1600 1800 Crss Coss Ciss Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd Capacitance [pF] VDS, Drain-Source Voltage [V] 0 5 10 15 20 25 VDS =520V VDS =320V VDS =130V @ Note : ID=3.0A VGS,Gate-Source Voltage[V] QG,Total Gate Charge [nC]

TYPICAL PERFORMANCE CHARACTERISTICS (Continued) Fig. 7 Breakdown Voltage vs. Temperature Fig. 8 On-Resistance vs. Temperature Fig. 11 Thermal Response -50 0 50 100 150 0.8 0.9 1.0 1.1 1.2 @ Notes : 1. VGS = 0V 2. ID = 250µA TJ, Junction Temperature [oC] BV DSS , (Normalized) Drain-Source Break down Voltage -50 0 50 100 150 0.0 0.5 1.0 1.5 2.0 2.5 @ Not es: 1. VGS = 10V 2. ID = 1.5 A TJ, Junction Temperature [oC] RDS(on), (Normalized) Drain-Source On-Resistance 100 101 102 10310-2 10-1 100 101 102 10 µs DC 100 µ s 1 ms 10 ms @ Notes : 1. TC = 25 oC 2. TJ = 150 oC 3. Single Pulse Operation in This Area is Limited by R DS(on) ID , Drain Current [A] VDS , Drain-Source Voltage [V] 25 50 75 100 125 150 0.0 0.5 1.0 1.5 2.0 2.5 3.0 ID, Drain Current [A] TC, Case Temperature [oC] 10-5 10-4 10-3 10-2 10-1 100 10110-2 10-1 100 single pulse 0.2 0.1 0.01 0.02 0.05 D=0.5 @ Notes : 1. Zθ JC(t)=1.25 oC/W Max. 2. Duty Factor, D=t1/t2 3. TJM-TC=PDM*ZθJC(t) ZθJC(t) , Thermal Response t1 , Square Wave Pulse Duration [sec]

TYPICAL PERFORMANCE CHARACTERISTICS (Control part) Fig.1 Operating Frequency 0.8 0.85 0.9 0.95 1.05 1.1 1.15 1.2 /G01/G02/G03 /G04 /G02/G03 /G03/G04 /G05/G03 /G06/G04/G04 /G06/G02/G03 /G06/G03/G04 Fosc Fig.2 Feedback Source Current 0.8 0.85 0.9 0.95 1.05 1.1 1.15 1.2 -25 0 25 50 75 100 125 150 Ifb Fig.3 Operating Current 0.8 0.85 0.9 0.95 1.05 1.1 1.15 1.2 -25 0 25 50 75 100 125 150 Iop Fig.4 Max Inductor Current 0.8 0.85 0.9 0.95 1.05 1.1 -25 0 25 50 75 100 125 150 Ipeak Fig.5 Start up Current 0.5 0.7 0.9 1.1 1.3 1.5 -25 0 25 50 75 100 125 150 Istart Fig.6 Start Threshold Voltage 0.85 0.9 0.95 1.05 1.1 1.15 -25 0 25 50 75 100 125 150 Vs tart

TYPICAL PERFORMANCE CHARACTERISTICS (Continued) (These characteristic graphs are normalized at Ta=25°C) Fig.7 Stop Threshold Voltage 0.85 0.9 0.95 1.05 1.1 1.15 -25 0 25 50 75 100 125 150 Vs top Fig.8 Maximum Duty Cycle 0.85 0.9 0.95 1.05 1.1 1.15 -25 0 25 50 75 100 125 150 Dmax Fig.9 Vcc Zener Voltage 0.8 0.85 0.9 0.95 1.05 1.1 1.15 1.2 -25 0 25 50 75 100 125 150 Vz Fig.10 Shutdown Feedback Voltage 0.85 0.9 0.95 1.05 1.1 1.15 -25 0 25 50 75 100 125 150 Vs d Fig.11 Shutdown Delay Current 0.8 0.85 0.9 0.95 1.05 1.1 1.15 1.2 -25 0 25 50 75 100 125 150 Idelay Fig.12 Over Voltage Protection 0.85 0.9 0.95 1.05 1.1 1.15 -25 0 25 50 75 100 125 150 Vovp

TYPICAL PERFORMANCE CHARACTERISTICS (Continued) (These characteristic graphs are normalized at Ta=25°C) Fig.13 Soft Start Voltage 0.85 0.9 0.95 1.05 1.1 1.15 -25 0 25 50 75 100 125 150 Vs s Fig.14 Drain Source Turn-on Resistance 0.5 1.5 2.5 -25 0 25 50 75 100 125 150 Rdson

12/28/99 0.0m 001 Stock#DSxxxxxxxx  1999 Fairchild Semiconductor Corporation LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. www.fairchildsemi.com