KA5X02XX FAIRCHILD | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 14

Technical content

Features

  • Precision Fixed Operating Frequency (100/67/50kHz)
  • Low Start-up Current (Typ. 100uA)
  • Pulse by Pulse Current Limiting
  • Over Load Protection
  • Over V oltage Protection (Min. 25V)
  • Internal Thermal Shutdown Function
  • Under V oltage Lockout
  • Internal High V oltage Sense FET
  • Auto-Restart Mode

Description

The Fairchild Power Switch(FPS) product family is specially designed for an off-line SMPS with minimal external components. The Fairchild Power Switch(FPS) consist of high voltage power SenseFET and current mode PWM IC. Included PWM controller features integrated fixed oscillator, under voltage lock out, leading edge blanking, optimized gate turn-on/ turn-off driver, thermal shut down protection, over voltage protection, and temperature compensated precision current sources for loop compensation and fault protection circuitry- compared to discrete MOSFET and controller or R CC switching converter solution. The Fairchild Power Switch(FPS) can reduce total component count, design size, weight and at the same time increase efficiency, productivity, and system reliability. It has a basic platform well suited for cost-effective design in either a flyback converter or a forward converter. TO-220F-4L 8-DIP TO220-5L 1. Drain 2. GND 3. Vcc 4. FB 5. S/S 1.6.7.8. Drain 2. GND 3. Vcc 4. FB 5. NC 1. GND 2. Drain 3. Vcc 4. FB uA Internal Block Diagram VCC 32V 5µA 2.5R 1R1mA 0.1V OVER VOLTAGE S/D 7.5V 27V Thermal S/D S R Q Power on reset − L.E.B S R Q OSC Vref Internal bias Good logic SFET DRAIN GND FB Soft Start * KA5H0265RC KA5x02xx-SERIES KA5H0265RC, KA5M0265R, KA5L0265R, KA5H02659RN/KA5M02659RN, KA5H0280R, KA5M0280R Fairchild Power Switch(FPS)

(Ta=25°C, unless otherwise specified) Note: 1. Repetitive rating: Pulse width limited by maximum junction temperature 2. L = 51mH, starting T j = 25°C Characteristic Symbol Value Unit KA5x0265xRx Drain-Gate Voltage (RGS=1MΩ )V DGR 650 V Gate-Source (GND) Voltage V GS ±30 V Drain Current Pulsed (1) IDM 8.0 A DC Continuous Drain Current (TC=25°C) I D 2.0 A DC Continuous Drain Current (TC=100°C) I D 1.3 A DC Single Pulsed Avalanche Energy (2) EAS 68 mJ Maximum Supply Voltage V CC,MAX 30 V Analog Input Voltage Range V FB -0.3 to VSD V Total Power Dissipation PD 42 W Darting 0.33 W/ °C Operating Junction Temperature. T J +160 °C Operating Ambient Temperature. T A -25 to +85 °C Storage Temperature Range. T STG -55 to +150 °C KA5x0280R Drain-Gate Voltage (RGS=1MΩ )V DGR 800 V Gate-Source (GND) Voltage V GS ±30 V Drain Current Pulsed (1) IDM 8.0 A DC Continuous Drain Current (TC=25°C) I D 2.0 A DC Continuous Drain Current (TC=100°C) I D 1.3 A DC Single Pulsed Avalanche Energy (2) EAS 90 mJ Maximum Supply Voltage V CC,MAX 30 V Analog Input Voltage Range V FB -0.3 to VSD V Total Power Dissipation PD 35 W Darting 0.28 W/ °C Operating Junction Temperature. T J +160 °C Operating Ambient Temperature. T A -25 to +85 °C Storage Temperature Range. T STG -55 to +150 °C

Electrical Characteristics (SFET Part) (Ta=25°C unless otherwise specified) Note: 1. Pulse test: Pulse width ≤ 300µS, duty cycle ≤ 2% Parameter Symbol Condition Min. Typ. Max. Unit KA5x0265xRx Drain-Source Breakdown Voltage BV DSS VGS=0V, ID=50µA 650 - - V Zero Gate Voltage Drain Current I DSS VDS=Max. Rating, VGS=0V - - 50 µA VDS=0.8Max. Rating, VGS=0V, TC=125°C - - 200 µA Static Drain-Source on Resistance (Note) RDS(ON) VGS=10V, ID=0.5A - 5.0 6.0 Ω Forward Transconductance (Note) gfs V DS=50V, ID=0.5A 1.5 2.5 - S Input Capacitance Ciss VGS=0V, VDS=25V, f=1MHz - 550 - pFOutput Capacitance Coss - 38 - Reverse Transfer Capacitance Crss - 17 - Turn on Delay Time td(on) V DD=0.5B VDSS, ID=1.0A (MOSFET switching time is essentially independent of operating temperature) -2 0- nS Rise Time tr - 15 - Turn Off Delay Time td(off) - 55 - Fall Time tf - 25 - Total Gate Charge (Gate-Source+Gate-Drain) Qg V GS=10V, ID=1.0A, VDS=0.5B VDSS (MOSFET switching time is essentially independent of operating temperature) -- 3 5 nCGate-Source Charge Qgs - 3 - Gate-Drain (Miller) Charge Qgd - 12 - KA5x0280R Drain-Source Breakdown Voltage BV DSS VGS=0V, ID=50µA 800 - - V Zero Gate Voltage Drain Current I DSS VDS=Max. Rating, VGS=0V - - 50 µA VDS=0.8Max. Rating, VGS=0V, TC=125°C - - 200 µA Static Drain-Source on Resistance (Note) RDS(ON) VGS=10V, ID=0.5A - 5.6 7.0 Ω Forward Transconductance (Note) gfs V DS=50V, ID=0.5A 1.5 2.5 - S Input Capacitance Ciss VGS=0V, VDS=25V, f=1MHz - 250 - pFOutput Capacitance Coss - 52 - Reverse Transfer Capacitance Crss - 25 - Turn on Delay Time td(on) VDD=0.5B VDSS, ID=1.0A (MOSFET switching time is essentially independent of operating temperature) -2 1- nSRise Time tr - 28 - Turn Off Delay Time td(off) - 77 - Fall Time tf - 24 - Total Gate Charge (Gate-Source+Gate-Drain) Qg V GS=10V, ID=1.0A, VDS=0.5B VDSS (MOSFET switching time is essentially independent of operating temperature) -- 6 0 nCGate-Source Charge Qgs - 15 - Gate-Drain (Miller) Charge Qgd - 20 - S 1 R----=

Electrical Characteristics (Control Part) (Continued) (Ta=25°C unless otherwise specified) Note: 1. These parameters, although guaranteed, are not 100% tested in production 2. These parameters, although guaranteed, are tested in EDS (wafer test) process Parameter Symbol Condition Min. Typ. Max. Unit UVLO SECTION Start Threshold Voltage V START VFB=GND 14 15 16 V Stop Threshold Voltage V STOP VFB=GND 8.2 8.8 9.4 V OSCILLATOR SECTION Initial Accuracy F OSC KA5H0265xRx KA5H0280R 90 100 110 kHz Initial Accuracy F OSC KA5M0265xRx KA5M0280R 61 67 73 kHz Initial Accuracy F OSC KA5L0265R 45 50 55 kHz Frequency Change With Temperature (2) ∆F/∆T- 2 5 °C ≤ Ta ≤ +85°C- ±5 ±10 % Maximum Duty Cycle Dmax KA5H0265xRx KA5H0280R 62 67 72 % Maximum Duty Cycle Dmax KA5M0265xRx KA5M0280R KA5L0265R 72 77 82 % FEEDBACK SECTION Feedback Source Current I FB Ta=25°C, 0V ≤ Vfb ≤ 3V 0.7 0.9 1.1 mA Shutdown Feedback Voltage V SD Vfb ≤ 6.5V 6.9 7.5 8.1 V Shutdown Delay Current Idelay Ta=25 °C, 5V ≤ Vfb ≤ VSD 456 µA SOFT START SECTION Soft Start Voltage V SS KA5H0265RC 4.7 5.0 5.3 V Soft Start Current I SS 0.8 1.0 1.2 mA REFERENCE SECTION Output Voltage (1) Vref Ta=25 °C 4.80 5.00 5.20 V Temperature Stability (1)(2) Vref/∆T- 2 5 °C ≤ Ta ≤ +85°C- 0 . 3 0 . 6 m V / °C CURRENT LIMIT(SELF-PROTECTION)SECTION Peak Current Limit I OVER KA5x02659RN 0.79 0.9 1.01 A Peak Current Limit I OVER KA5x0265Rx KA5x0280R 1.05 1.2 1.34 A PROTECTION SECTION Over Voltage Protection V OVP VCC ≥ 24V 25 27 29 V Thermal Shutdown Temperature (1) TSD - 140 160 - °C TOTAL DEVICE SECTION Start-up Current I START VCC=14V - 100 170 µA Operating Supply Current (Control Part Only) IOPR VCC ≤ 28 - 7 12 mA

Typical Performance Characteristics (Continued) (These characteristic graphs are normalized at Ta=25°C) Figure13. Soft Start Voltage Figure 14. Static Drain-Source on Resistance Fig.13 Soft Start Voltage 0.85 0.9 0.95 1.05 1.1 1.15 -25 0 25 50 75 100 125 150 Vs s Fig.14 Drain Source Turn-on Resistance 0.5 1.5 2.5 -25 0 25 50 75 100 125 150 Rdson Temperature [°C] Temperature [ °C] ( )

Package Dimensions (Continued) TO-220F-4L(Forming)

Package Dimensions (Continued) 8-DIP

Package Dimensions (Continued) TO-220-5L

Package Dimensions (Continued) TO-220-5L(Forming)

Ordering Information

TU : Non Forming Type YDTU : Forming Type Product Number Package Marking Code BV DSS FOSC RDS(on) KA5H0265RCTU TO-220-5L 5H0265RC 650V 100kHz 5 ΩKA5H0265RCYDTU TO-220-5L(Forming) KA5M0265RTU TO-220F-4L 5M0265R 650V 67kHz 5 ΩKA5M0265RYDTU TO-220F-4L(Forming) KA5L0265RTU TO-220F-4L 5L0265R 650V 50kHz 5 Ω KA5L0265RYDTU TO-220F-4L(Forming) Product Number Package Marking Code BV DSS FOSC RDS(on) KA5H0280RTU TO-220F-4L 5H0280R 800V 100kHz 5.6 ΩKA5H0280RYDTU TO-220F-4L(Forming) KA5M0280RTU TO-220F-4L 5M0280R 800V 67kHz 5.6 Ω KA5M0280RYDTU TO-220F-4L(Forming) Product Number Package Marking Code BV DSS FOSC RDS(on) KA5H02659RN 8-DIP 5H02659R 650V 100kHz 5 Ω KA5M02659RN 8-DIP 5M02659R 650V 67kHz 5 Ω

8/25/03 0.0m 001 Stock#DSxxxxxxxx  2003 Fairchild Semiconductor Corporation LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. www.fairchildsemi.com DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.