KA5L0380R FAIRCHILD | Alldatasheet

Document overview

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Technical content

Features

  • Precision fixed operating frequency (100/67/50kHz)
  • Low start-up current(typ. 100uA)
  • Pulse by pulse current limiting
  • Over current protection
  • Over voltage protecton (Min. 25V)
  • Internal thermal shutdown function
  • Under voltage lockout
  • Internal high voltage sense FET
  • Auto-restart mode

Description

The SPS product family is specially designed for an off-line SMPS with minimal external components. The SPS consist of high voltage power SenseFET and current mode PWM IC. Included PWM controller features integrated fixed fre- quency oscillator, under voltage lock-out, leading edge blanking, optimized gate turn-on/turn-off driver, thermal shutdown protection, over voltage protection, and tempera- ture compensated precision current sources for loopcompen- sation and fault protection circuitry. Compared to discrete MOSFET and PWM controller or RCC solution, a SPS can reduce total component count, design size, weight and at the same time increase efficiency, productivity, and system reli- ability. It has a basic platform well suited for cost-effective design in either a flyback converter or a forward converter. TO-220F-4L 1. GND 2. DRAIN 3. VCC 4. FB Internal Block Diagram VccVccVccVcc FBFBFBFB DRAIN GNDGNDGNDGND SFETSFETSFETSFET Vref OSC INTERNAL BIAS GOOD LOGIC Q S R +2.5R 1 R 1 mA 5 uA _7.5V THERMAL S/D Q S R POWER ON RESET L.E.B _27V UVLO Rsens KA5H0380R/KA5M0380R/KA5L0380R SPS

KA5H0380R/KA5M0380R/KA5L0380R Absolute Maximum Ratings Notes: 1. Tj=25 °C to 150°C 2. Repetitive rating: Pulse width limited by maximum junction temperature 3. L=51mH, starting Tj=25 °C 4. L=13 µH, starting Tj=25°C Characteristic Symbol Value Unit Drain-source (GND) voltage (1) VDSS 800 V Drain-Gate voltage (RGS=1MΩ ) VDGR 800 V Gate-source (GND) voltage VGS ±30 V Drain current pulsed (2) IDM 12 A DC Single pulsed avalanche energy (3) EAS 95 mJ Avalanche current (4) IAS 10 A Continuous drain current (TC=25°C) ID 3.0 A DC Continuous drain current (TC=100°C) ID 2.1 A DC Supply voltage VCC 30 V Analog input voltage range VFB −0.3 to VSD V Total power dissipation PD (watt H/S) 35 W Derating 0.28 W/ °C Operating temperature TOPR −25 to +85 °C Storage temperature TSTG −55 to +150 °C

KA5H0380R/KA5M0380R/KA5L0380R Electrical Characteristics (SFET part) (Ta = 25°C unless otherwise specified) Note: Pulse test: Pulse width < 300µS, duty < 2% Characteristic Symbol Test condition Min. Typ. Max. Unit Drain-source breakdown voltage BVDSS VGS=0V, ID=50µA 800 −− V Zero gate voltage drain current I DSS VDS=Max., Rating, VGS=0V −− 250 µA VDS=0.8Max., Rating, VGS=0V, TC=125°C −− 1000 µA Static drain-source on resistance (note) RDS(ON) VGS=10V, ID=0.5A − 45 Ω Forward transconductance (note) gfs VDS=50V, ID=0.5A 1.5 2.5 − S Input capacitance C iss VGS=0V, VDS=25V, f=1MHz − 779 − pFOutput capacitance C oss − 75.6 − Reverse transfer capacitance C rss − 24.9 − Turn on delay time t d(on) VDD=0.5BVDSS, ID=1.0A (MOSFET switching time are essentially independent of operating temperature) − 40 − nS Rise time t r − 95 − Turn off delay time t d(off) − 150 − Fall time t f − 60 − Total gate charge (gate-source+gate-drain) Qg VGS=10V, ID=1.0A, VDS=0.5BVDSS (MOSFET switching time are essentially independent of operating temperature) −− 34 nCGate-source charge Q gs − 7.2 − Gate-drain (Miller) charge Q gd − 12.1 − S 1 R----=

KA5H0380R/KA5M0380R/KA5L0380R Electrical Charcteristics (SFET part) (Continued) (Ta = 25°C unless otherwise specified) NOTE: 1. These parameters, although guaranteed, are not 100% tested in production 2. These parameters, although guaranteed, are tested in EDS(water test) process Characteristic Symbol Test condition Min. Typ. Max. Unit REFERENCE SECTION Output voltage (1) Vref Ta=25 °C 4.80 5.00 5.20 V Temperature Stability (1)(2) Vref/∆T −25°C≤Ta≤+85°C − 0.3 0.6 mV/ °C OSCILLATOR SECTION Initial accuracy F OSC KA5H0380R 90 100 110 kHz Initial accuracy F OSC KA5M0380R 61 67 73 kHz Initial accuracy F OSC KA5L0380R 45 50 55 kHz Frequency change with temperature (2) −25°C≤Ta≤+85°C −± 5 ±10 % PWM SECTION Maximum duty cycle D max KA5H0380R 62 67 72 % Maximum duty cycle D max KA5M0380R KA5L0380R 72 77 82 % FEEDBACK SECTION Feedback source current I FB Ta=25°C, 0V<Vfb<3V 0.7 0.9 1.1 mA Shutdown delay current I delay Ta=25°C, 5V≤Vfb≤VSD 456 µA OVER CURRENT PROTECTION SECTION Over current protection I L(max) Max. inductor current 1.89 2.15 2.41 A UVLO SECTION Start threshold voltage V th(H) − 8.4 9 9.6 V Minimum operating voltage V th(L) After turn on 14 15 16 V TOTAL STANDBY CURRENT SECTION Start current I ST VCC=14V − 0.1 0.17 mA Operating supply current (control part only) IOPR VCC<28 − 71 2 mA SHUTDOWN SECTION Shutdown Feedback voltage V SD Vfb>6.5V 6.9 7.5 8.1 V Thermal shutdown temperature (Tj) (1) TSD − 140 160 −° C Over voltage protection V OVP VCC>24V 25 27 29 V

KA5H0380R/KA5M0380R/KA5L0380R typical performance characteristics (continued) (These characteristic graphs are normalized at Ta = 25°C) Figure13. Soft Start Voltage Figure 14. Drain Source Turn-on Resistance Fig.13 Soft Start Voltage 0.85 0.9 0.95 1.05 1.1 1.15 -25 0 25 50 75 100 125 150 Vs s Fig.14 Drain Source Turn-on Resistance 0.5 1.5 2.5 -25 0 25 50 75 100 125 150 Rdson

KA5H0380R/KA5M0380R/KA5L0380R Package Dimensions TO-220F-4L

KA5H0380R/KA5M0380R/KA5L0380R Package Dimensions (Continued) TO-220F-4L (Forming)

KA5H0380R/KA5M0380R/KA5L0380R

Ordering Information

TU : Non forming Type YDTU :forming Type Product Number Package Rating Operating Temperature KA5H0380R-TU TO-220F-4L 800V, 3A -25 °C to +85°CKA5H0380R-YDTU TO-220F-4L(Forming) KA5M0380R-TU TO-220F-4L 800V, 3A -25 °C to +85°C KA5M0380R-YDTU TO-220F-4L(Forming) KA5L0380R-TU TO-220F-4L 800V, 3A -25 °C to +85°C KA5L0380R-YDTU TO-220F-4L(Forming)

KA5H0380R/KA5M0380R/KA5L0380R

KA5H0380R/KA5M0380R/KA5L0380R 7/24/00 0.0m 001 Stock#DSxxxxxxxx  2000 Fairchild Semiconductor International LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR INTERNATIONAL. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. www.fairchildsemi.com