KA5X03XX FAIRCHILD | Alldatasheet

Document overview

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Technical content

Features

  • Precision Fixed Operating Frequency (100/67/50kHz)
  • Low Start-up Current(Typ. 100uA)
  • Pulse by Pulse Current Limiting
  • Over Current Protection
  • Over V oltage Protection (Min. 25V)
  • Internal Thermal Shutdown Function
  • Under V oltage Lockout
  • Internal High V oltage Sense FET
  • Auto-Restart Mode

Applications

  • SMPS for VCR, SVR, STB, DVD & DVCD
  • SMPS for Printer, Facsimile & Scanner
  • Adaptor for Camcorder

Description

The Fairchild Power Switch(FPS) product family is specially designed for an off-line SMPS with minimal external components. The Fairchild Power Switch(FPS) consists of a high voltage power SenseFET and a current mode PWM IC. Included PWM controller integrates the fixed frequency oscillator, the under voltage lock-out, the leading edge blanking, the optimized gate turn-on/turn-off driver, the thermal shutdown protection, the over voltage protection, and the temperature compensated precision current sources for the loop compensation and the fault protection circuitry. Compared to a discrete MOSFET and a PWM controller or an RCCsolution, a Fairchild Power Switch(FPS) can reduce the total component count, design size and weight and at the same time increase efficiency, productivity, and system reliability. It has a basic platform well suited for the cost effective design in either a flyback converter or a forward converter Internal Block Diagram #3 VCC 32V 5µA 2.5R 1mA 0.1V OVER VOLTAGE S/D 7.5V 27V Thermal S/D S R Q Power on reset L.E.B S R Q OSC Vref Internal bias Good logic SFET #2 DRAIN #1 GND #4 FB (*#3 VCC) (*#4 FB) (*#1.6.7.8 DRAIN) (*#2 GND) *Asterisk - KA5M0365RN, KA5L0365RN KA5x03xx-SERIES KA5H0365R, KA5M0365R, KA5L0365R, KA5M0365RN, KA5L0365RN, KA5H0380R, KA5M0380R, KA5L0380R Fairchild Power Switch(FPS) TO-220F-4L 1. GND 2. Drain 3. VCC 4. FB 8-DIP

1.6.7.8 Drain

  1. GND 3. VCC 4. FB 5. NC

(Ta=25°C, unless otherwise specified) Note: 1. Repetitive rating: Pulse width limited by maximum junction temperature 2. L = 51mH, starting Tj = 25°C 3. L = 13µH, starting Tj = 25°C Characteristic Symbol Value Unit KA5H0365R, KA5M0365R, KA5L0365R Maximum Drain Voltage V D,MAX 650 V Drain-Gate Voltage (RGS=1MΩ )V DGR 650 V Gate-Source (GND) Voltage V GS ±30 V Drain Current Pulsed (1) IDM 12.0 A DC Continuous Drain Current (TC=25°C) I D 3.0 A DC Continuous Drain Current (TC=100°C) I D 2.4 A DC Single Pulsed Avalanche Energy (2) EAS 358 mJ Maximum Supply Voltage V CC,MAX 30 V Analog Input Voltage Range V FB -0.3 to VSD V Total Power Dissipation PD 75 W Derating 0.6 W/ °C Operating Junction Temperature. T J +160 °C Operating Ambient Temperature. T A -25 to +85 °C Storage Temperature Range. T STG -55 to +150 °C KA5H0380R, KA5M0380R, KA5L0380R Maximum Drain Voltage V D,MAX 800 V Drain-Gate Voltage (RGS=1MΩ )V DGR 800 V Gate-Source (GND) Voltage V GS ±30 V Drain Current Pulsed (1) IDM 12.0 A DC Continuous Drain Current (TC=25°C) I D 3.0 A DC Continuous Drain Current (TC=100°C) I D 2.1 A DC Single Pulsed Avalanche Energy (2) EAS 95 mJ Maximum Supply Voltage V CC,MAX 30 V Analog Input Voltage Range V FB -0.3 to VSD V Total Power Dissipation PD 75 W Derating 0.6 W/ °C Operating Junction Temperature. T J +160 °C Operating Ambient Temperature. T A -25 to +85 °C Storage Temperature Range. T STG -55 to +150 °C

(Ta=25°C, unless otherwise specified) Note: 1. Repetitive rating: Pulse width limited by maximum junction temperature 2. L = 51mH, starting Tj = 25°C 3. L = 13µH, starting Tj = 25°C Characteristic Symbol Value Unit KA5M0365RN, KA5L0365RN Maximum Drain Voltage V D,MAX 650 V Drain-Gate Voltage (RGS=1MΩ )V DGR 650 V Gate-Source (GND) Voltage V GS ±30 V Drain Current Pulsed (1) IDM 12.0 A DC Continuous Drain Current (Ta=25°C) I D 0.42 A DC Continuous Drain Current (Ta=100°C) I D 0.28 A DC Single Pulsed Avalanche Energy (2) EAS 127 mJ Maximum Supply Voltage V CC,MAX 30 V Analog Input Voltage Range V FB -0.3 to VSD V Total Power Dissipation PD 1.56 W Derating 0.0125 W/ °C Operating Junction Temperature. T J +160 °C Operating Ambient Temperature. T A -25 to +85 °C Storage Temperature Range. T STG -55 to +150 °C

Electrical Characteristics (SenseFET Part) (Ta = 25°C unless otherwise specified) Note: 1. Pulse test: Pulse width ≤ 300µS, duty ≤ 2% Parameter Symbol Condition Min. Typ. Max. Unit KA5H0365R, KA5M0365R, KA5L0365R Drain-Source Breakdown Voltage BV DSS VGS=0V, ID=50µA 650 - - V Zero Gate Voltage Drain Current I DSS VDS=Max. Rating, VGS=0V - - 50 µA VDS=0.8Max. Rating, VGS=0V, TC=125°C - - 200 µA Static Drain-Source on Resistance (Note) RDS(ON) VGS=10V, ID=0.5A - 3.6 4.5 Ω Forward Transconductance (Note) gfs V DS=50V, ID=0.5A 2.0 - - S Input Capacitance Ciss VGS=0V, VDS=25V, f=1MHz - 720 - pFOutput Capacitance Coss - 40 - Reverse Transfer Capacitance Crss - 40 - Turn On Delay Time td(on) V DD=0.5BVDSS, ID=1.0A (MOSFET switching time is essentially independent of operating temperature) - 150 - nSRise Time tr - 100 - Turn Off Delay Time td(off) - 150 - Fall Time tf - 42 - Total Gate Charge (Gate-Source+Gate-Drain) Qg V GS=10V, ID=1.0A, VDS=0.5BVDSS (MOSFET switching time is essentially independent of operating temperature) -- 3 4 nCGate-Source Charge Qgs - 7.3 - Gate-Drain (Miller) Charge Qgd - 13.3 - KA5H0380R, KA5M0380R, KA5L0380R Drain-Source Breakdown Voltage BV DSS VGS=0V, ID=50µA 800 - - V Zero Gate Voltage Drain Current I DSS VDS=Max. Rating, VGS=0V - - 250 µA VDS=0.8Max. Rating, VGS=0V, TC=125°C - - 1000 µA Static Drain-Source on Resistance (Note) RDS(ON) VGS=10V, ID=0.5A - 4.0 5.0 Ω Forward Transconductance (Note) gfs V DS=50V, ID=0.5A 1.5 2.5 - S Input Capacitance Ciss VGS=0V, VDS=25V, f=1MHz - 779 - pFOutput Capacitance Coss - 75.6 - Reverse Transfer Capacitance Crss - 24.9 - Turn On Delay Time td(on) V DD=0.5BVDSS, ID=1.0A (MOSFET switching time is essentially independent of operating temperature) -4 0- nS Rise Time tr - 95 - Turn Off Delay Time td(off) - 150 - Fall Time tf - 60 - Total Gate Charge (Gate-Source+Gate-Drain) Qg V GS=10V, ID=1.0A, VDS=0.5BVDSS (MOSFET switching time is essentially independent of operating temperature) -- 3 4 nCGate-Source Charge Qgs - 7.2 - Gate-Drain (Miller) Charge Qgd - 12.1 - S 1 R----=

Electrical Characteristics (SenseFET Part) (Ta = 25°C unless otherwise specified) Note: 1. Pulse test: Pulse width ≤ 300µS, duty ≤ 2% Parameter Symbol Condition Min. Typ. Max. Unit KA5M0365RN, KA5L0365RN Drain-Source Breakdown Voltage BV DSS VGS=0V, ID=50µA 650 - - V Zero Gate Voltage Drain Current I DSS VDS=Max. Rating, VGS=0V - - 50 µA VDS=0.8Max. Rating, VGS=0V, TC=125°C - - 200 µA Static Drain-Source on Resistance (Note) RDS(ON) VGS=10V, ID=0.5A - 3.6 4.5 Ω Forward Transconductance (Note) gfs V DS=50V, ID=0.5A 2.0 - - S Input Capacitance Ciss VGS=0V, VDS=25V, f=1MHz - 314.9 - pFOutput Capacitance Coss - 47 - Reverse Transfer Capacitance Crss - 9 - Turn On Delay Time td(on) V DD=0.5BVDSS, ID=1.0A (MOSFET switching time is essentially independent of operating temperature) -1 1 . 2- nSRise Time tr - 34 - Turn Off Delay Time td(off) - 28.2 - Fall Time tf - 32 - Total Gate Charge (Gate-Source+Gate-Drain) Qg V GS=10V, ID=1.0A, VDS=0.5BVDSS (MOSFET switching time is essentially independent of operating temperature) 11.93 nCGate-Source Charge Qgs - 1.95 - Gate-Drain (Miller) Charge Qgd 6.85 S 1 R----=

Electrical Characteristics (Control Part) (Continued) (Ta = 25°C unless otherwise specified) Note: 1. These parameters, although guaranteed, are not 100% tested in production 2. These parameters, although guaranteed, are tested in EDS(water test) process Characteristic Symbol Test condition Min. Typ. Max. Unit UVLO SECTION Start Threshold Voltage V START VFB=GND 14 15 16 V Stop Threshold Voltage V STOP VFB= G N D 8 . 499 . 6V OSCILLATOR SECTION Initial Accuracy F OSC KA5H0365R KA5H0380R 90 100 110 kHz Initial Accuracy F OSC KA5M0365R KA5M0365RN KA5M0380R 61 67 73 kHz Initial Accuracy F OSC KA5L0365R KA5L0365RN KA5L0380R 45 50 55 kHz Frequency Change With Temperature Maximum Duty Cycle Dmax KA5H0365R KA5H0380R 62 67 72 % Maximum Duty Cycle Dmax KA5M0365R KA5M0365RN KA5M0380R KA5L0365R KA5L0365RN KA5L0380R 72 77 82 % FEEDBACK SECTION Feedback Source Current I FB Ta=25°C, 0V<Vfb<3V 0.7 0.9 1.1 mA Shutdown Feedback Voltage V SD Vfb>6.5V 6.9 7.5 8.1 V Shutdown Delay Current Idelay Ta=25 °C, 5V≤Vfb≤VSD 456 µA REFERENCE SECTION Output Voltage (1) Vref Ta=25 °C 4.80 5.00 5.20 V Temperature Stability (1)(2) Vref/∆T- 2 5 °C≤Ta≤+85°C- 0 . 3 0 . 6 m V / °C CURRENT LIMIT(SELF-PROTECTION)SECTION Peak Current Limit I OVER Max. inductor current 1.89 2.15 2.41 A PROTECTION SECTION Over Voltage Protection V OVP VCC>24V 25 27 29 V Thermal Shutdown Temperature (Tj) (1) TSD - 140 160 - °C TOTAL STANDBY CURRENT SECTION Start-up Current I START VCC=14V - 100 170 µA Operating Supply Current (Control Part Only) IOP VCC<28 - 7 12 mA

Typical Performance Characteristics (Continued) (These characteristic graphs are normalized at Ta = 25°C) Figure13. Soft Start Voltage Figure 14. Static Drain-Source on Resistance Fig.13 Soft Start Voltage 0.85 0.9 0.95 1.05 1.1 1.15 -25 0 25 50 75 100 125 150 Vs s Fig.14 Drain Source Turn-on Resistance 0.5 1.5 2.5 -25 0 25 50 75 100 125 150 Rdson

Package Dimensions (Continued) TO-220F-4L(Forming)

Package Dimensions (Continued) 8-DIP

Ordering Information

TU :Non Forming Type YDTU : Forming type Product Number Package Marking Code BV DSS FOSC RDS(on) KA5H0365RTU TO-220F-4L 5H0365R 650V 100kHz 3.6 Ω KA5H0365RYDTU TO-220F-4L(Forming) KA5M0365RTU TO-220F-4L 5M0365R 650V 67kHz 3.6 ΩKA5M0365RYDTU TO-220F-4L(Forming) KA5L0365RTU TO-220F-4L 5L0365R 650V 50kHz 3.6 ΩKA5L0365RYDTU TO-220F-4L(Forming) KA5M0365RN 8-DIP 5M0365R 650V 67kHz 3.6 Ω KA5L0365RN 8-DIP 5L0365R 650V 50kHz 3.6 Ω Product Number Package Marking Code BV DSS FOSC RDS(on) KA5H0380RTU TO-220F-4L 5H0380R 800V 100kHz 4.6 ΩKA5H0380RYDTU TO-220F-4L(Forming) KA5M0380RTU TO-220F-4L 5M0380R 800V 67kHz 4.6 ΩKA5M0380RYDTU TO-220F-4L(Forming) KA5L0380RTU TO-220F-4L 5L0380R 800V 50kHz 4.6 ΩKA5L0380RYDTU TO-220F-4L(Forming)

12/12/02 0.0m 001 Stock#DSxxxxxxxx  2002 Fairchild Semiconductor Corporation LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. www.fairchildsemi.com DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.