KA5X0165RXX FAIRCHILD | Alldatasheet

Document overview

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Technical content

Features

  • Precision Fixed Operating Frequency (100/67/50kHz )
  • Low Start-up Current (Typ. 100uA)
  • Pulse by Pulse Current Limiting
  • Over Load Protection
  • Over V oltage Protection (Min. 25V) - except KA5H0165RVN
  • Internal Thermal Shutdown Function
  • Under V oltage Lockout
  • Internal High V oltage Sense FET
  • Auto-Restart Mode

Description

The Fairchild Power Switch(FPS) product family is specially designed for an off-line SMPS with minimal external components. The Fairchild Power Switch(FPS) consist of high voltage power SenseFET and current mode PWM IC. Included PWM controller features integrated fixed oscillator, under voltage lock out, leading edge blanking, optimized gate turn-on/ turn-off driver, thermal shut down protection, over voltage protection, and temperature compensated precision current sources for loop compensation and fault protection circuitry compared to discrete MOSFET and controller or R CC switching converter solution, The Fairchild Power Switch(FPS) can reduce total component count, design size, weight and at the same time increase efficiency, productivity, and system reliability. It is well suited for cost effective design of flyback converters. TO-220F-4L 8-DIP 1.6.7.8. Drain 2. GND 3. Vcc 4. FB 5. NC 1. GND 2. Drain 3. Vcc 4. FB uA Internal Block Diagram VCC 32V 5µA 2.5R 1R1mA 0.1V OVER VOLTAGE S/D 7.5V 27V Thermal S/D S R Q Power on reset − L.E.B S R Q OSC Vref Internal bias Good logic SFET DRAIN GND FB KA5x0165Rxx-SERIES KA5H0165R/RN, KA5M0165R/RN, KA5L0165R/RN, KA5H0165RVN Fairchild Power Switch(FPS)

(Ta=25°C, unless otherwise specified) Note: 1. Repetitive rating: Pulse width limited by maximum junction temperature 2. L=24mH, starting Tj=25°C Characteristic Symbol Value Unit Drain-Gate Voltage (RGS=1MΩ )V DGR 650 V Gate-Source (GND) Voltage V GS ±30 V Drain Current Pulsed (1) IDM 4.0 A DC Continuous Drain Current (TC=25°C) I D 1.0 A DC Continuous Drain Current (TC=100°C) I D 0.7 A DC Single Pulsed Avalanche Energy (2) EAS 95 mJ Maximum Supply Voltage V CC,MAX 30 V Analog Input Voltage Range V FB -0.3 to VSD V Total Power Dissipation PD 40 W Derating 0.32 W/ °C Operating Junction Temperature. T J +160 °C Operating Ambient Temperature. T A -25 to +85 °C Storage Temperature Range. T STG -55 to +150 °C

Electrical Characteristics (SFET Part) (Ta=25°C unless otherwise specified) Note: 1. Pulse test: Pulse width ≤ 300µS, duty cycle ≤ 2% Parameter Symbol Condition Min. Typ. Max. Unit Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=50µA 650 - - V Zero Gate Voltage Drain Current IDSS VDS=Max. Rating, VGS=0V - - 50 µA VDS=0.8Max. Rating, VGS=0V, TC=125°C - - 200 µA Static Drain-Source on Resistance (Note) RDS(ON) VGS=10V, ID=0.5A - 8 10 Ω Forward Transconductance (Note) gfs V DS=50V, ID=0.5A 0.5 - - S Input Capacitance Ciss VGS=0V, VDS=25V, f=1MHz - 250 - pFOutput Capacitance Coss - 25 - Reverse Transfer Capacitance Crss - 10 - Turn on Delay Time td(on) VDD=0.5B VDSS, ID=1.0A (MOSFET switching time is essentially independent of operating temperature) -1 2- nSRise Time tr - 4 - Turn Off Delay Time td(off) - 30 - Fall Time tf - 10 - Total Gate Charge (Gate-Source+Gate-Drain) Qg V GS=10V, ID=1.0A, VDS=0.5B VDSS (MOSFET switching time is essentially independent of operating temperature) -- 2 1 nCGate-Source Charge Qgs - 3 - Gate-Drain (Miller) Charge Qgd - 9 - S 1 R----=

Electrical Characteristics (Control Part) (Continued) (Ta=25°C unless otherwise specified) Note: 1. These parameters, although guaranteed, are not 100% tested in production 2. These parameters, although guaranteed, are tested in EDS (wafer test) process Parameter Symbol Condition Min. Typ. Max. Unit UVLO SECTION Start Threshold Voltage V START VFB=GND 14 15 16 V Stop Threshold Voltage V STOP VFB=GND 8.2 8.8 9.4 V OSCILLATOR SECTION Initial Accuracy F OSC KA5H0165Rxx 90 100 110 kHz Initial Accuracy F OSC KA5M0165Rx 61 67 73 kHz Initial Accuracy F OSC KA5L0165Rx 45 50 55 kHz Frequency Change With Temperature (2) ∆F/∆T- 2 5 °C ≤ Ta ≤ +85°C- ±5 ±10 % Maximum Duty Cycle Dmax KA5H0165Rxx 62 67 72 % Maximum Duty Cycle Dmax KA5M0165Rx KA5L0165Rx 72 77 82 % FEEDBACK SECTION Feedback Source Current I FB Ta=25°C, 0V ≤ Vfb ≤ 3V 0.7 0.9 1.1 mA Shutdown Feedback Voltage V SD Vfb ≥ 6.5V 6.9 7.5 8.1 V Shutdown Delay Current Idelay Ta=25 °C, 3V ≤ Vfb ≤ VSD 456 µA REFERENCE SECTION Output Voltage (1) Vref Ta=25 °C 4.80 5.00 5.20 V Temperature Stability (1)(2) Vref/∆T- 2 5 °C ≤ Ta ≤ +85°C- 0 . 3 0 . 6 m V / °C CURRENT LIMIT(SELF-PROTECTION)SECTION Peak Current Limit I OVER Max. inductor current 0.53 0.6 0.67 A PROTECTION SECTION Thermal Shutdown Temperature (1) TSD - 140 160 - °C Over Voltage Protection V OVP except KA5H0165RVN 25 27 29 V TOTAL STANDBY CURRENT SECTION Start-up Current I START VCC=14V - 100 170 µA Operating Supply Current (Control Part Only) IOP VCC ≤ 28 - 7 12 mA

Typical Performance Characteristics (Continued) (These characteristic graphs are normalized at Ta=25°C) Figure13. Soft Start Voltage Figure 14. Static Drain-Source on Resistance Fig.13 Soft Start Voltage 0.85 0.9 0.95 1.05 1.1 1.15 -25 0 25 50 75 100 125 150 Vs s Fig.14 Drain Source Turn-on Resistance 0.5 1.5 2.5 -25 0 25 50 75 100 125 150 Rdson Temperature [°C] Temperature [ °C] ( )

Package Dimensions (Continued) TO-220F-4L(Forming)

Package Dimensions (Continued) 8-DIP

Ordering Information

TU : Non Forming Type YDTU : Forming Type Product Number Package Marking Code BV DSS FOSC RDS(on) KA5H0165RTU TO-220F-4L 5H0165R 650V 100kHz 8 ΩKA5H0165RYDTU TO-220F-4L(Forming) KA5M0165RTU TO-220F-4L 5M0165R 650V 67kHz 8 ΩKA5M0165RYDTU TO-220F-4L(Forming) KA5L0165RTU TO-220F-4L 5L0165R 650V 50kHz 8 Ω KA5L0165RYDTU TO-220F-4L(Forming) KA5H0165RN 8-DIP 5H0165R 650V 100kHz 8 Ω KA5M0165RN 8-DIP 5M0165R 650V 67kHz 8 Ω KA5L0165RN 8-DIP 5L0165R 650V 50kHz 8 Ω Product Number Package Marking Code BV DSS FOSC RDS(on) KA5H0165RVN 8-DIP 5H0165RV 650V 100kHz 8 Ω

8/25/03 0.0m 001 Stock#DSxxxxxxxx  2003 Fairchild Semiconductor Corporation LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. www.fairchildsemi.com DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.