DM54S573 NSC | Alldatasheet
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Technical content
& . g GA National = Semiconductor
8 DM54/74S573
2 (1024 x 4) 4096-Bit TTL PROM a General Description Features This Schottky memory is organized in the popular 1024 ™ Advanced titanium-tungsten (Ti-W) fuses words by 4 bits configuration. Memory enable inputs are ™ Schottky-clamped for high speed provided to control the output states. When the device is Address access—down to 35 ns max enabled, the outputs represent the contents of the selected Enable access—25 ns max word. When disabled, the 4 outputs go to the “OFF” or high Enable recovery—25 ns max impedance state. @ PNP inputs for reduced input loading PROMS are shipped from the factory with lows in all loca- ™ All DC and AC parameters guaranteed over tions. A high may be programmed into any selected location temperature by following the programming instructions. @ Low voltage TRI-SAFE™ programming @ TRI-STATE® Outputs Block Diagram Ly Ly q ear any Pin Names. MEMORY MATRIX “ Output Enables DECODER Ld L J LF 4 = x | ano | Grouna | 4 |_oo-c3 | oupus | 5 [2] mux J] mux [7] mux o0-03 a ENABLE GATE 3 a at a0 TUo/e199-1 3-58
i=} Connection Diagrams 5 FA gq Dual-In-Line Package Plastic Leaded Chip Carrier (PLCC) g i=] of a Yeo gas 3e 5s M2 19-8 32 1 2019 r7 42-43 18 A7 Bs 18) a7 3 wa 17h as Mas 17} a6 e Ms 16 FAs oo—6 16 As a6 15-6 a7 156 a7 14-07 ae 14-07 aos 13-06 910 11:12:13 a9 12,05 nmaene GND 10 tips eer? TUD/9199-3 Tu/8198-2 Top View Top View Order Number Order Number DM74S573V, 573AV, 573BV DM54/74S573J, 573Ad, 573BU See NS Package Number V20A DM74S573N, 573AN, 573BN See NS Package Number J18A or N18A
Ordering Information
Commercial Temp Range (0°C to + 70°C) [owas Ti [owrassras PSS Ze [owrassv «Soi Military Temp Range (—55°C to + 125°C) [owes | [Towsassrosy [SO 3-59
@| Absolute Maximum Ratings (note 1) Operating Conditions | If Military/Aerospace specified devices are required, Min Max Units =| please contact the National Semiconductor Sales Supply Voltage (Voc) i] Office/Distributors for availability and specifications, Military 4.50 5.50 v © | Supply Voltage (Note 2) —0.5V to +7.0V Commercial 4.75 5.25 Vv 8 Input Voltage (Note 2) =1.2V to +5.5V Ambient Temperature (Ta) 56 6 _ Military - +125 a 2 cut votage ete 2) oon er bad Commercial 0 +70 °c a| ° cree ompere ure 7 ‘ io sore Logical “0” Input Voltage 0 08 Vv ead Temp. (Soldering, 10 seconds) Logical “1” Input Voltage 2.0 55 Vv Note 1; Absolute maximum ratings are those values beyond which the de- vice may be permanently damaged. They do not mean that the device may be operated at these values. Note 2: These limits do not apply during programming. For the programming ratings, refer to the programming instructions. symbol Conditions |_omsassra[ow7ase7a | ig [ree | | win | typ | Max | win [ typ | max | m___| tnputLoad Current | Voc=Maxvw=oasv || -a0 | -250| | 20 | -250|_ na tm | ImputLeakage Current | Voc=Maxvw=27v | | | as || as | pa Voo=Maxvw=ssv | [| [xo [| [10 | ma Vou___| tow Level Output votage | Voo =Min.to.=16ma || 005 | oso || 00s | ous Tv C Input Capacitance Voc = 5.0V, Vin = 2.0V 40 ' Ta = 25°C, 1 MHz : a Co Output Capacitance Voc = 5.0V, Vo = 2.0V 7 Ta = 25°C, 1 MHz, Outputs Off p loc Power Supply Current Voc = Max, Input Grounded 140 mA All Outputs Open los Short Circuit Vo = OV, Voc = Max _ _ _ _ Output Current (Note 2) 20 70 | —20 70 | mA Taz) Output Leakage Voo = Max.Vo= oasviezav| || xa |] | v0 | wa Von} OutputVottageHigh | Ion = = 2.0 mA [eafoet | [ tty Note 1: These limits apply over the entire operating range unless stated otherwise. All typical values are for Voc = 5.0V and Ta — 25°C. Note 2: During Ios measurement, only one output at a time should be grounded. Permanent. damage may otherwise result. 3-60
COMMERCIAL TEMP RANGE (0°C to + 70°C) g DM74ss73__ | ——DM748573A_| _DM74S573B ey Symbol Parameter Units | = ES | min | typ | Mex | win | typ [ ax | win | Typ | Max | 2 taa__| tavav | Address Access time | [ao [60 [| 2s [as [ [as | as | ns |p Ter | rexax | EnabieRecoverytime | | 20 [as | [is | as | [1s | 25 | ns |S txz__| texaz | ouputpisabietime [| 20 | as | [a5 [as | [a5 | 25 | ns MILITARY TEMP RANGE (~55°C to + 125°C) JEDEC [_pms4ss73__ | _DMs4s573A DM54S573B Symbol Units Symbol | reemeen e Pmt a elt Tas | tavav | Address Accesstime | | 4 | 75 [| 25 | eo [| 25 [ 50 | ns Functional Description TESTABILITY TITANIUM-TUNGSTEN FUSES The Schottky PROM die includes extra rows and columns of National's Programmable Read-Only Memories (PROMs) fusable links for testing the programmability of each chip. feature titanium-tungsten (Ti-W) fuse links designed to pro- These test fuses are placed at the worst-case chip locations gram efficiently with only 10.5V applied. The high perform- to provide the highest possible confidence in the program- ance and reliability of these PROMS are the result of fabrica- ming tests in the final product. A ROM pattern is also per- tion by a Schottky bipolar process, of which the titanium- manently fixed in the additional circuitry and coded to pro- tungsten metallization is an integral part, and the use of an vide a parity check of input address levels. These and other —_ on-chip Programming circuit. test circuits are used to test for correct operation of the row a, major advantage of the titanium-tungsten fuse technology and column-select circuits and functionality of input and en- is the low programming voltage of the fuse links. At 10.5V, able gates. All test circuits are available at both wafer and this virtually eliminates the need for guard-ring devices and assembled device levels to allow 100% functional and para- wide spacings required for other fuse technologies. Care is metric testing at every stage of the test flow. taken, however, to minimize voltage drops across the die RELIABILITY and to reduce parasitics, The device is designed to ensure As with all National products, the Ti-W PROMs are subject. ‘at worst-case fuse operating current is low enough for ed to an on-going reliability evaluation by the Reliability As- “ellable long-term operation. The Darlington programming coramee Deg sie evaluations omplo igoy AS circuit is liberally designed to insure adequate power density Ife t ste incla iding dynamic high-temperatore operating, "0" Blowing the fuse links. The complete circuit design is ed life tests, ing eynamic high-temperature operating optimized to provide high performance over the entire oper- lie, temperature-humidity le, temperature cycling, and ther- Sta ranges of Vege ard tomporatons mal shock. To date, nearly 7.4 million Schottky Ti-W PROM 9 Fang} co . device hours have been logged, with samples in Epoxy B molded DIP (N-package), PLCC (V-package) and CERDIP (J-package). Device performance in all package configura- tions is excellent. 3-61