55C MICROSEMI | Alldatasheet

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Technical content

Silicon Controlled Rectifier Series SOC My Byer FT K~ D 5.850 6.144 149.10 156.06 Ss | Eo s E 6.850 7.315 17399 187.33 c F797 827 20.24 21.01 G 276 .286 701 7.26 Yoouy ° J 425 499° 10.80 12.67 2 x K .260 .280 6.60 7M Dia. W y ; NO 150,388 tT; i Po mae 295 0 = 7.49 “tH [ly Ro == ‘900 --- 22.86 Dia. sul a=) S .225 .275 6.48 6.99 To-208an—F TO-209AC VAR) .223 5.41 5.66 Dia. X 215 225 5.46 5.72 Note 1: 1/2-20 UNF-3A Y — .290 315 7.37 8.00 Note 2: Full thread within 2 1/2 threads Z 514 530 13.06 13.46 Note 3: For insulated cathode lead, AA 089 .099 2.26 2.51 add suffix “IL” to catalog number Microsemi Forward & Reverse Reverse Transient e High dv/dt-200 V/usec. Catalog Number Repetitive Blocking Blocking ©1200 Amperes surge current Standard Lead Flag Lead ®Low forward on-state voltage 55C60B 55C60BF 600 700 ° i i — BScBOB BSCBOBE 300 900 Package conforming to either TO—209AC or 55C100B 55C100BF 1000 1100 er : 55C1208 55C120BF 1200 1300 conomical for general purpose phase control

applications

To specify dv/dt higher than 200V/usec., contact factory.

Electrical Characteristics

Max. RMS on-state current 'T(RMS) 86 Amps Te = 70°C Max. average on-state cur. 'T(AV) 55 Amps Tc = 70°C Max. peak on-state voltage VIM 1.6 Volts 'TM = 220 A(peak) Max. holding current 'H 200 mA Max. peak one cycle surge current 'TsM 1200 A Tc = 70°C, 60Hz Max. I2t capability for fusing it 6000A2S t = 8.3 ms Thermal and Mechanical Characteristics Operating junction temp range Ty -65°C to 125°C Storage temperature range TSTG -65°C to 150°C Maximum thermal resistance Rewc 0.32°C/W Junction to case Typical thermal resistance (greased) Recs 0.20°C/W Case to sink Mounting torque 100-130 inch pounds Weight 55C-B Approx. 3.6 ounces (102.0 grams) typical 55C-BF Approx. 3.24 ounces (91.8 grams) typical O . COLORADO a 800 Hoyt Street Broomfield, CO. 80020 9-8-00 Rev. 1 Microsemi 5 62 FAX: (303) 466-3775 www.microsemi.com

Critical rate of rise of on-state current (note 1) —di/dt 100A/usec. Ty = 125°C Typical delay time (note 1) td 3.0 usec. Typical circuit commuted turn-off time (note 2) tg 100 usec. TJ = 125°C Note 1: 'TM = 50A, YD = VDRM. VGT = 12V open circuit, 20 ohm-0.1 usec. rise time Note 2: 'TM = 50A, di/dt = 5A/usec., VR during turn-off interval = 50V min., reapplied dv/dt = 20V/usec., linear to rated VDRM, VGT = OV Triggering Max. gate voltage to trigger Vet 3.0V Ty = 25°C Max. nontriggering gate voltage Me) 0.25V Ty = 125°C Max. gate current to trigger 'oT 100mA Ty = 25°C Max. peok gate power Pom 15W Average gate power Peay) 3.0W tp = 10 usec. Max. peak gate current 'oM 4.0A Max. peak gate voltage (forward) Vom 20V Max. peak gate voltage (reverse) Vom 10V Blocking Max. leakage current 'DRM 10mA Ty =125°C &V DRM Max. reverse leakage 'RRM 10mA Ty =125°C &V RRM Critical rate of rise of off-state voltage dv/dt 200V/usec. Ty =125°C 9-8-00 Rev. 1

Typical Forward On—State Characteristics Maximum Power Dissipation 100004] 2 140 5 a ee oo PEEP gt EL VA TTT ee EEE ey 3 4 ee Ben) ott EH 3 Aa: Zane rf] é Y/ oT os TAT 1000. J] 4 2 20 YY EEE Arr SSS A 600 a 0 10 20 30 40 50 60 70 80 90 100

400 Ho Average On-State Current — Amperes

a 200 A Transient Thermal Impedance £ / 35 "tate Atel | ELLE) = STI = roof 25PC A Ap 25FC} J} Ff ft gs 3 VY S 2 8 ee ee i | = OEE EEE EEE EEE LTTE TT 2 [ yy | tT tt tt Pt et o 2 YZ Bot PS I ea 5 [FT TT TT ETT TTT tT] 83. Dia pO) He 2% 52 teem LIE UIT UTA) etre 2 9 52 o LIM TUM LUI Li Tl 8 12 16 20 24 28 32 36 001 01 o1 1.0 10 100 Instantaneous On-State Voltage - Volts Time in Seconds Figure 2 Figure 5 Forward Current Derating y Maximum Nonrepetitive Surge Current § 130 5 1300 sot |! tT T TTT] ¢@ tf | Tit TTT Bo WALT TTT ING TTT ETT e110 ‘e Sen _ 1100 Fo SVOAL TT TET Toe OE INC EE TT So AAA EE ET Te of SEAN TT ° 90 IANS 900 mS Po HINA TT TT 3 LE ETT TTT so tT IAAT TTT | os gf PT TTT TSA 2 70 © 700 Po fol dele! lool Lele | [| |g yf LE TIT Tt ETS 2 60 40° | 6b 20°] 180 600 0 10 20 30 40 50 60 70 80 90 100 1 10 100 Average On-State Current - Amperes Number of Cycles 9-8-00 Rev. 1